Vishay General Semiconductor - Diodes Division SMBJ24AHM3_A/I
- Part No.:
- SMBJ24AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ24AHM3_A/I.pdf
- Description:
- TVS DIODE 24VWM 38.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ24AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 24 V stand-off voltage (VWM), 26.7–29.5 V breakdown voltage (VBR) at 1 mA, 38.9 V maximum clamping voltage (VC) at 15.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on power rails and signal lines in industrial motor drives and automotive ECUs.
For engineers reviewing the SMBJ24AHM3_A/I datasheet, SMBJ24AHM3_A/I pinout, SMBJ24AHM3_A/I application, or SMBJ24AHM3_A/I equivalent, this page delivers verified electrical specs, thermal behavior under surge conditions, AEC-Q101 qualification status, halogen-free RoHS compliance, and real-world clamping performance data critical for ESD and lightning-induced transient design validation.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, leveraging glass-passivated silicon junction technology to deliver sub-nanosecond response time and low incremental surge resistance. Its 150 °C maximum junction temperature and 100 °C/W junction-to-ambient thermal resistance enable reliable operation in high-temperature PCB environments without forced cooling.
The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits 1.0 µA maximum reverse leakage at VWM, ensuring minimal standby power loss in always-on circuits. Its MSL Level 1 moisture sensitivity and 260 °C lead-free reflow compatibility support automated SMT assembly per J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 24 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working range for 24 V nominal systems. |
| VBR (min/max) | 26.7 V / 29.5 V at IT = 1 mA - Confirmed breakdown threshold ensures predictable turn-on during transients above system rail. |
| VC @ IPPM | 38.9 V at 15.4 A - Clamping voltage limits downstream IC stress during 600 W surge events; critical for MOSFET gate and MCU I/O protection. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 µs waveform; supports IEC 61000-4-5 Level 4 surge immunity testing. |
| IFSM | 100 A - Single half-sine surge rating (8.3 ms); enables protection against inductive kickback in relay and solenoid driver circuits. |
| TJ max | +150 °C - Maximum junction temperature; allows deployment in under-hood automotive and enclosed industrial enclosures. |
| Package | SMB (DO-214AA) - Standardized 2-pin surface-mount outline with 5.0 mm × 3.9 mm footprint and 2.2 mm height; compatible with high-volume pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, UL 94 V-0 rated compound, polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode-side connection point in unidirectional configuration | Connected to protected line (e.g., 24 V supply rail); clamps positive transients to ground when voltage exceeds VBR. |
| Anode | Reference/ground return path | Connected to system ground or low-impedance return plane; completes clamping path during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 surge immunity requirements for industrial and automotive equipment. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock per AEC test plan. |
| Halogen-free, RoHS-compliant (HM3) | Meets EU RoHS Directive 2011/65/EU and JEDEC JS709C material restrictions; suitable for green manufacturing programs. |
| MSL Level 1, 260 °C peak reflow | Supports single-pass lead-free soldering without preconditioning; eliminates moisture-related popcorning risk. |
| Low clamping ratio (VC/VBR ≈ 1.38) | Minimizes overvoltage overshoot during fast transients, reducing stress on downstream 3.3 V or 5 V logic interfaces. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of 24 V DC input stage against load dump and inductive switching spikes from brushed DC motors and solenoids. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power rail and chassis ground to clamp transients up to ±100 V. Use Value: Limits voltage seen by upstream DC-DC converters and microcontrollers to ≤38.9 V, preventing latch-up or permanent damage. |
Use Scenario: Guarding LIN bus transceivers and power window control ICs against battery reverse connection and jump-start surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on VBAT line, activated only during >26.7 V events with <1 ns response. Use Value: Maintains functional safety integrity per ISO 16750-2 while enabling use of cost-effective non-automotive-grade interface ICs. |
| Telecom Power Supplies | Factory Automation Sensors |
|
Use Scenario: Input-stage protection for 24 V telecom rectifiers exposed to lightning-induced surges on outdoor copper lines. IC Role / Device Role / Timing Role: Primary surge suppression element absorbing 600 W pulses before secondary MOV or GDT stages activate. Use Value: Extends system MTBF by eliminating premature failure of primary-side FETs and PWM controllers during repeated surge events. |
Use Scenario: Shielding analog output lines (4–20 mA) and digital I/O of IO-Link sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) TVS on signal traces, preserving accuracy of precision current loops. Use Value: Prevents sensor calibration drift and communication lockup caused by sub-100 ns ESD transients on field wiring. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ24AHE3_A/I | Same electrical specs but RoHS-compliant (E3), not halogen-free; lacks AEC-Q101 qualification. | Approved for commercial/industrial use only; unsuitable for automotive production where halogen-free and AEC-Q101 are mandatory. | Select SMBJ24AHE3_A/I only if halogen-free content and automotive qualification are not required. |
| SMAJ24A-M3/A | Lower 400 W PPPM, SMA package (smaller footprint), higher VC = 39.4 V at 12.3 A; same VWM/VBR range. | Used where board space is constrained and lower surge energy (IEC 61000-4-5 Level 3) suffices; not drop-in due to different thermal mass and layout. | Choose SMAJ24A-M3/A only when 20 % lower surge rating is acceptable and PCB area savings justify redesign. |
Compared with SMBJ24AHE3_A/I, SMBJ24AHM3_A/I adds halogen-free construction and AEC-Q101 qualification without sacrificing clamping performance; versus SMAJ24A-M3/A, it delivers 50 % higher surge power handling and superior thermal robustness in the larger SMB package.
Availability
SMBJ24AHM3_A/I is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, telecom power supplies, and factory automation sensors requiring stable component supply across long-lifecycle programs.
Supply support for SMBJ24AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where consistent clamping, AEC-Q101 compliance, and halogen-free materials are mandatory.
FAQ
What is the maximum clamping voltage of SMBJ24AHM3_A/I at its rated peak pulse current?
The SMBJ24AHM3_A/I has a maximum clamping voltage (VC) of 38.9 V at 15.4 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. The SMBJ24AHM3_A/I maintains this clamping performance across its full operating temperature range.
Is SMBJ24AHM3_A/I qualified for automotive applications?
Yes, SMBJ24AHM3_A/I is AEC-Q101 qualified, as confirmed by the "HM3" suffix and Vishay documentation. It meets the full stress test suite for automotive discrete semiconductors, including temperature cycling, high-temperature reverse bias, and mechanical shock. This makes SMBJ24AHM3_A/I suitable for under-hood and body electronics where reliability under vibration and thermal extremes is required.
What does the "HM3" suffix indicate for SMBJ24AHM3_A/I?
The "HM3" suffix in SMBJ24AHM3_A/I denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. Unlike the "E3" variant, HM3 uses bromine- and chlorine-free molding compounds and passes JEDEC JESD201 Class 2 whisker testing. This suffix directly identifies SMBJ24AHM3_A/I as meeting stringent environmental and automotive reliability standards.
Can SMBJ24AHM3_A/I be used in bidirectional configurations?
No, SMBJ24AHM3_A/I is a unidirectional TVS diode, as indicated by the "A" (not "CA") suffix and cathode band marking. Bidirectional operation requires the "CA" suffix (e.g., SMBJ24CA). Using SMBJ24AHM3_A/I in reverse-biased configurations risks permanent junction damage due to lack of symmetrical avalanche structure - always verify polarity alignment in circuit layout.
What is the thermal resistance from junction to ambient for SMBJ24AHM3_A/I?
The SMBJ24AHM3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended pad layout (0.2" × 0.2" copper pads per terminal). This value assumes no additional heatsinking and defines the steady-state temperature rise under continuous 5.0 W power dissipation. For pulsed operation, transient thermal impedance must be evaluated using Figure 5 in the Vishay datasheet.
SMBJ24AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 24V
- Voltage - Breakdown (Min):
- 26.7V
- Voltage - Clamping (Max) @ Ipp:
- 38.9V
- Current - Peak Pulse (10/1000µs):
- 15.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ24AHM3_A/I FAQ
1.How can I place an order for SMBJ24AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ24AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ24AHM3_A/I reliable?
The price and inventory of SMBJ24AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ24AHM3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ24AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ24AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ24AHM3_A/I?
SMBJ24AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ24AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ24AHM3_A/I?
For technical support, including SMBJ24AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ24AHM3_A/I requirements.
6.How does Aetrix verify that SMBJ24AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ24AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ24AHM3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ24AHM3_A/I?
All SMBJ24AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ24AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ24AHM3_A/I part is unused and in its original packaging.
Return procedure for SMBJ24AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ24AHM3_A/I Tags

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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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