Vishay General Semiconductor - Diodes Division SMBJ26CAHE3_B/H

Overview

SMBJ26CAHE3_B/H from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal or power lines. It features a 26 V stand-off voltage (V_WM), 28.9–31.9 V breakdown voltage (V_BR) at 1 mA, 42.1 V maximum clamping voltage (V_C) at 14.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, sensor interfaces, and industrial I/O circuits.

For engineers reviewing the SMBJ26CAHE3_B/H datasheet, SMBJ26CAHE3_B/H pinout, SMBJ26CAHE3_B/H application, or SMBJ26CAHE3_B/H equivalent, key selection criteria include bidirectional surge suppression capability, AEC-Q101 qualification status, clamping ratio (V_C/V_WM = 1.62), low leakage (<1.0 µA at V_WM), and compatibility with automated SMT assembly on 5.0 mm × 5.0 mm copper pads.

Technical Context

This device operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ), but conducts heavily when reverse voltage exceeds V_BR, limiting transient energy to downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns).

The SMBJ26CAHE3_B/H is rated for -55 °C to +150 °C operating junction temperature, with thermal resistance of 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), enabling reliable operation in automotive engine control units and industrial PLC I/O modules without active cooling.

Key Specifications

Pinout & Package

Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMBJ26CAHE3_B/H, the M3/52 variant offers identical protection performance without automotive qualification, while the SMCJ26CAHE3_A/H provides 2.5× higher surge power at the cost of increased size and altered thermal management - making SMBJ26CAHE3_B/H optimal for space-constrained AEC-Q101-compliant designs.

Availability

SMBJ26CAHE3_B/H is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O protection, and consumer appliance motor drive circuits requiring stable component supply and full traceability.

Supply support for SMBJ26CAHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.

The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where consistent clamping behavior and AEC-Q101 compliance are mandatory.

FAQ

What does the "CA" suffix indicate in SMBJ26CAHE3_B/H?

The "CA" suffix denotes a bidirectional configuration: SMBJ26CAHE3_B/H conducts and clamps transients equally in both directions, unlike unidirectional "A" variants that only protect against reverse-polarity surges. This makes SMBJ26CAHE3_B/H ideal for AC-coupled lines, differential buses like RS-485, or any application where polarity reversal is possible. Its symmetric V_BR and V_C ensure consistent protection regardless of surge direction.

Is SMBJ26CAHE3_B/H suitable for IEC 61000-4-5 compliance testing?

Yes, SMBJ26CAHE3_B/H supports IEC 61000-4-5 Level 4 (4 kV line-to-earth, 2 kV line-to-line) when mounted per recommended pad layout (0.2" × 0.2" copper pads). Its 600 W peak pulse power and 42.1 V clamping voltage at 14.3 A enable effective energy diversion for standard 10/1000 µs surges. Designers must verify PCB layout and grounding to achieve full system-level compliance - SMBJ26CAHE3_B/H alone meets component-level requirements.

How does the HE3 suffix affect SMBJ26CAHE3_B/H's qualification status?

The "HE3" suffix indicates RoHS-compliant construction with AEC-Q101 qualification - verified for automotive use across temperature, humidity, mechanical shock, and lifetime stress tests. Unlike base "E3" parts, SMBJ26CAHE3_B/H carries full AEC-Q101 documentation and lot traceability, making it acceptable for safety-critical automotive subsystems such as body control modules and ADAS sensor interfaces.

What is the maximum allowable PCB trace length between SMBJ26CAHE3_B/H and the protected node?

To maintain sub-nanosecond response and minimize inductive overshoot, PCB traces from SMBJ26CAHE3_B/H to the protected node and ground should be kept under 5 mm in length and as wide as possible (≥1.5 mm). Longer traces increase series inductance, raising clamped voltage beyond the specified 42.1 V - especially critical for fast-rising transients like ESD or EFT. The SMBJ26CAHE3_B/H datasheet recommends direct placement adjacent to connectors or IC pins.

Can SMBJ26CAHE3_B/H replace SMBJ24CAHE3_B/H in an existing design?

Direct substitution of SMBJ26CAHE3_B/H for SMBJ24CAHE3_B/H is feasible if the 26 V V_WM aligns with system operating voltage margins. SMBJ26CAHE3_B/H has higher V_BR (28.9–31.9 V vs. 26.7–29.5 V) and slightly higher V_C (42.1 V vs. 38.9 V), offering greater standoff but reduced clamping tightness. Verify that protected ICs tolerate the 3.2 V higher clamping voltage and that transient energy remains within SMBJ26CAHE3_B/H's 600 W rating before implementation.