Vishay General Semiconductor - Diodes Division SMBJ30AHE3/52
- Part No.:
- SMBJ30AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ30AHE3/52.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,645
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ30AHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V maximum clamping voltage (VC) at 12.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supply inputs, industrial sensor interfaces, and telecom line protection.
For engineers reviewing the SMBJ30AHE3/52 datasheet, SMBJ30AHE3/52 pinout, SMBJ30AHE3/52 application, or SMBJ30AHE3/52 equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT assembly on standard PCB pad layouts.
Technical Context
This TVS diode operates as a clamping device that remains non-conductive below VWM = 30 V and rapidly transitions to low-impedance conduction above VBR (min 33.3 V), limiting transient energy to safe levels. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and repeatable breakdown behavior under repetitive surge stress.
The SMBJ30AHE3/52 is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits a temperature coefficient of VBR of +0.099 %/°C - enabling predictable performance across -55 °C to +150 °C operating range without thermal runaway risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse working voltage before significant leakage; defines upper limit of normal operating rail. |
| VBR (min/max) | 33.3 V / 36.8 V at IT = 1 mA - Confirmed breakdown threshold range; ensures reliable triggering above nominal rail. |
| VC @ IPPM | 48.4 V at 12.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on downstream ICs. |
| PPPM | 600 W - Peak pulse power handling capability; supports high-energy transients like ISO 7637-2 Pulse 1/2a/5a. |
| IFSM | 100 A - Single half-sine surge current rating; validates robustness against inductive switch-off events. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive and high-ambient industrial environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including HTOL, TC, HAST, and ESD testing per JESD47. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD22-B102. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or lower-potential node; completes clamping loop during positive transients. |
| Cathode | Reverse-biased terminal / protected line connection | Connected to protected line (e.g., 30 V rail); conducts when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Withstands high-energy surges common in automotive load-dump and industrial motor switching without degradation. |
| AEC-Q101 qualified (HE3 suffix) | Meets automotive reliability requirements for mission-critical ECUs, ADAS sensors, and infotainment power supplies. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage margin between clamp and breakdown - improves system-level surge immunity headroom. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT reflow profiles without moisture sensitivity concerns or baking requirement. |
| Glass passivated junction | Ensures stable leakage current (<1.0 µA at VWM) and long-term parameter stability under thermal cycling. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 30 V battery-fed control modules from ISO 7637-2 load dump pulses up to 60 V. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between input rail and chassis ground. Use Value: Limits transient voltage to ≤48.4 V, preventing damage to 36 V-rated DC-DC converters and microcontrollers. |
Use Scenario: Shielding 4–20 mA analog sensor outputs from ESD and inductive coupling in factory automation. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and return lines near connector. Use Value: Sub-1 ns response time and <1.0 µA leakage preserve signal integrity while suppressing ±8 kV contact ESD per IEC 61000-4-2. |
| Telecom DC Power Feeds | Consumer Appliance Motor Drive Protection |
|
Use Scenario: Safeguarding PoE-powered equipment front-end from lightning-induced surges on 48 V DC feeds. IC Role / Device Role / Timing Role: Primary-stage TVS on DC input before DC-DC regulation and isolation. Use Value: 600 W rating handles multi-kA induced surges; AEC-Q101 qualification supports extended field life in outdoor cabinets. |
Use Scenario: Suppressing back-EMF spikes from brushed DC motors in smart home appliances (e.g., vacuum cleaners). IC Role / Device Role / Timing Role: Unidirectional TVS across motor terminals, cathode to supply rail. Use Value: 100 A IFSM withstands repeated commutation spikes; SMB package fits tight board space near motor driver ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30AHM3/52 | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free material compliance is mandated (e.g., EU WEEE, specific OEM specs). | Choose SMBJ30AHM3/52 when halogen-free construction is required without compromising surge performance or qualification status. |
| SMAJ30AHE3/A | Same VWM/VBR/VC ratings but in smaller SMA (DO-214AC) package; 400 W PPPM, lower IPPM (8.3 A), no AEC-Q101 listing. | Limited to commercial-grade, space-constrained applications where 600 W surge margin and automotive qualification are not needed. | Choose SMAJ30AHE3/A only for cost-sensitive, non-automotive designs with lower surge exposure and tighter board area budgets. |
Compared with SMBJ30AHE3/52, SMBJ30AHM3/52 offers identical protection performance with halogen-free materials, while SMAJ30AHE3/A trades 33 % lower pulse power and missing AEC-Q101 for reduced footprint - making SMBJ30AHE3/52 the optimal choice for automotive and high-reliability industrial use cases.
Availability
SMBJ30AHE3/52 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom power supply designs requiring stable component supply, AEC-Q101 validation, and consistent 600 W surge immunity.
Supply support for SMBJ30AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and communications infrastructure where robustness, consistency, and qualification compliance are mandatory.
FAQ
What is the clamping voltage of SMBJ30AHE3/52 at its rated peak pulse current?
The SMBJ30AHE3/52 has a maximum clamping voltage (VC) of 48.4 V at 12.4 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured and guaranteed per Vishay's datasheet (Document Number: 88392, Rev. 09-Jan-2024), ensuring predictable overvoltage limiting for protected circuits. The SMBJ30AHE3/52 maintains this clamping performance across its full operating temperature range.
Is SMBJ30AHE3/52 qualified for automotive applications?
Yes, SMBJ30AHE3/52 is AEC-Q101 qualified, as confirmed by the "HE3" suffix and documentation in Vishay's official datasheet. It undergoes stress testing for high-temperature operating life, temperature cycling, humidity, and ESD per JESD47, making it suitable for engine control units, body electronics, and ADAS modules. The SMBJ30AHE3/52 meets automotive reliability requirements without derating in standard mounting conditions.
What is the maximum reverse leakage current for SMBJ30AHE3/52 at its stand-off voltage?
The SMBJ30AHE3/52 exhibits a maximum reverse leakage current (ID) of 1.0 µA at its rated stand-off voltage (VWM) of 30 V and TA = 25 °C. This low leakage preserves power efficiency in always-on systems and avoids false triggering in high-impedance sensing circuits. The SMBJ30AHE3/52 maintains leakage <5.0 µA up to 125 °C per thermal derating curves in the datasheet.
Does SMBJ30AHE3/52 have a bidirectional version?
No - SMBJ30AHE3/52 is strictly unidirectional, indicated by the "A" suffix and cathode band marking. For bidirectional operation at the same voltage level, the equivalent part is SMBJ30CAHE3/52 (VWM = 30 V, symmetrical clamping in both polarities). The SMBJ30AHE3/52 must be oriented with cathode toward the protected line; reverse installation prevents proper clamping function.
What is the thermal resistance from junction to ambient for SMBJ30AHE3/52?
The SMBJ30AHE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard FR-4 PCB layout and natural convection cooling. The SMBJ30AHE3/52's RθJL is 20 °C/W, supporting effective heat transfer to PCB traces or local copper pours in thermally demanding applications.
SMBJ30AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 12.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ30AHE3/52 FAQ
1.How can I place an order for SMBJ30AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ30AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ30AHE3/52 reliable?
The price and inventory of SMBJ30AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ30AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ30AHE3/52?
SMBJ30AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ30AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ30AHE3/52?
For technical support, including SMBJ30AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30AHE3/52 requirements.
6.How does Aetrix verify that SMBJ30AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ30AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ30AHE3/52?
All SMBJ30AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ30AHE3/52 part is unused and in its original packaging.
Return procedure for SMBJ30AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ30AHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)