Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ30AHE3_A/H

Part No.:
SMBJ30AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ30AHE3_A/H.pdf
Description:
TVS DIODE 30VWM 48.4VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,701

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ30AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V maximum clamping voltage (VC) at 12.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), deployed in automotive power supply inputs and industrial sensor interfaces.

For engineers reviewing the SMBJ30AHE3_A/H datasheet, SMBJ30AHE3_A/H pinout, SMBJ30AHE3_A/H application, or SMBJ30AHE3_A/H equivalent, key selection criteria include clamping performance under 12.4 A surge, AEC-Q101 qualification status, unidirectional polarity with cathode band marking, and thermal resistance (RθJA = 100 °C/W) for PCB layout derating.

Technical Context

This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches to divert transient energy away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1.0 µA at 30 V).

Designed for 10/1000 µs surge waveforms per IEC 61000-4-5, it delivers 600 W peak pulse power with <1 ns response time and 0.099 %/°C temperature coefficient of VBR - critical for stable clamping across -55 °C to +150 °C operating junction range.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 30 V - maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected circuit's nominal DC rail.
VBR (min/max) 33.3 V / 36.8 V at 1 mA - guaranteed avalanche onset window; ensures reliable triggering above system overvoltage thresholds.
VC @ IPPM 48.4 V at 12.4 A - clamped voltage during 10/1000 µs surge; defines worst-case stress on downstream components.
PPPM 600 W - peak transient power handling capability; determines survivability against lightning-induced or inductive-switching surges.
ID @ VWM ≤1.0 µA - reverse leakage at rated stand-off; minimizes quiescent power loss and avoids false triggering in high-impedance circuits.
TJ max. +150 °C - maximum junction temperature; enables operation in under-hood automotive or enclosed industrial environments.
RθJA 100 °C/W - thermal resistance junction-to-ambient; requires ≥5.0 mm × 5.0 mm copper pad per terminal for full 600 W rating.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, MSL Level 1 (260 °C reflow peak), RoHS-compliant and AEC-Q101 qualified. Cathode identified by black band.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side reference node Connected to ground or lowest potential point; completes conduction path during reverse avalanche.
Cathode Protected line input Connected to line being protected (e.g., 24 V supply rail); avalanche occurs between cathode and anode when VCK > VBR.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and body electronics - supports PPAP and long-term reliability requirements.
600 W peak pulse power (10/1000 µs) Withstands high-energy transients from load dump or ISO 7637-2 Pulse 5a without degradation - eliminates need for external series impedance in many cases.
Glass passivated junction Ensures stable VBR tolerance and low leakage drift over temperature and lifetime - critical for precision protection in sensor front-ends.
Low incremental surge resistance Minimizes voltage overshoot during fast-rising transients (<1 ns response) - improves immunity to ESD and EFT events per IEC 61000-4-2/4.
MSL Level 1 moisture sensitivity Enables standard SMT assembly without baking - reduces manufacturing cost and avoids moisture-related popcorning during reflow.

Applications

Automotive Power Input Protection Industrial Sensor Signal Line Protection

Use Scenario: 24 V battery-fed ECUs exposed to load dump transients up to 60 V and ISO 7637-2 Pulse 5a.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp surges before they reach LDOs or microcontrollers.

Use Value: Clamps to ≤48.4 V at 12.4 A, protecting downstream 3.3 V/5 V logic from destructive overvoltage while maintaining AEC-Q101 compliance.

Use Scenario: Analog output lines (e.g., 4–20 mA current loop) in factory automation sensors subject to cable-induced EFT bursts.

IC Role / Device Role / Timing Role: Low-capacitance TVS mounted at connector entry point to suppress fast transients before reaching op-amp or ADC input stage.

Use Value: Sub-1 ns response and ≤1.0 µA leakage preserve signal integrity and offset accuracy while surviving repeated 5 kHz EFT bursts.

Telecom DC Power Feeds Consumer Device USB Power Input

Use Scenario: -48 V telecom rectifier outputs feeding base station subsystems vulnerable to lightning-induced surges on long feeder lines.

IC Role / Device Role / Timing Role: Primary-level TVS on DC input bus, coordinated with upstream MOVs to handle multi-kA surges with staged clamping.

Use Value: 600 W rating and 150 °C TJ max enable sustained operation in sealed outdoor enclosures with minimal derating.

Use Scenario: 5 V USB Type-C power input on portable medical monitors subjected to user-handling ESD events.

IC Role / Device Role / Timing Role: Secondary-level TVS after fuse and before USB controller IC to absorb contact discharge up to ±15 kV (IEC 61000-4-2).

Use Value: Low clamping voltage (48.4 V) prevents latch-up in 5 V-rated USB PHYs while AEC-Q101 grade ensures production traceability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ30AHM3_A/H Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. No difference in protection performance or layout; selected only when halogen-free compliance is mandated by OEM or regional regulation. Choose SMBJ30AHM3_A/H if RoHS + halogen-free material declaration is required; otherwise SMBJ30AHE3_A/H is functionally identical.
SMAJ30AHE3/A Lower 400 W peak pulse power (vs. 600 W), higher RθJA (140 °C/W), same VWM/VBR/VC but reduced surge margin. Not suitable for automotive load dump or high-repetition industrial transients; limited to lower-energy consumer or telecom applications. Select SMAJ30AHE3/A only where space constraints force SMA package use and surge energy is confirmed ≤400 W; SMBJ30AHE3_A/H remains preferred for robustness.

Compared with SMBJ30AHM3_A/H, SMBJ30AHE3_A/H offers identical protection performance with standard RoHS compliance, while SMAJ30AHE3/A trades 33 % lower pulse power and higher thermal resistance for smaller footprint - making SMBJ30AHE3_A/H optimal for AEC-Q101-critical, high-surge industrial and automotive designs.

Availability

SMBJ30AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom DC power feeds requiring stable component supply with AEC-Q101 qualification and full 600 W surge capability.

Supply support for SMBJ30AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and automotive-grade validation.

The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where failure due to voltage surges must be eliminated.

FAQ

What is the clamping voltage of SMBJ30AHE3_A/H at its rated peak pulse current?

The SMBJ30AHE3_A/H has a maximum clamping voltage (VC) of 48.4 V at 12.4 A peak pulse current (IPPM), measured under the standardized 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMBJ30AHE3_A/H maintains this clamping performance across its full operating temperature range of -55 °C to +150 °C.

Is SMBJ30AHE3_A/H qualified for automotive applications?

Yes, SMBJ30AHE3_A/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392. This qualification covers stress testing for temperature cycling, humidity bias, mechanical shock, and surge robustness - validating its suitability for under-hood and body-control module applications. The SMBJ30AHE3_A/H meets all requirements for PPAP submission and long-term reliability in automotive production.

What is the standoff voltage and breakdown voltage range for SMBJ30AHE3_A/H?

The SMBJ30AHE3_A/H has a reverse stand-off voltage (VWM) of 30 V and a breakdown voltage (VBR) range of 33.3 V to 36.8 V at 1 mA test current. VWM ensures negligible leakage during normal operation, while the VBR window guarantees consistent avalanche initiation above system overvoltage thresholds. These parameters are measured per ANSI/IEEE C62.35 and are fully characterized across temperature in the official Vishay datasheet.

How does the SMBJ30AHE3_A/H package differ from SMAJ series in terms of thermal performance?

The SMBJ30AHE3_A/H uses the SMB (DO-214AA) package with a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W, whereas the SMAJ30AHE3/A uses the smaller SMA (DO-214AC) package with RθJA = 140 °C/W. This 40 % lower thermal resistance allows SMBJ30AHE3_A/H to sustain its full 600 W peak pulse rating with standard 5.0 mm × 5.0 mm copper pads, while SMAJ30AHE3/A requires more aggressive layout or derating for equivalent surge handling.

What is the polarity configuration and marking convention for SMBJ30AHE3_A/H?

SMBJ30AHE3_A/H is a unidirectional TVS diode with cathode denoted by a single black band on the SMB package body. The cathode terminal connects to the line being protected (e.g., 24 V rail), and the anode connects to ground. This polarity ensures forward conduction is blocked during normal operation, while reverse avalanche provides clamping action when VCK exceeds VBR. Bidirectional variants use "CA" suffix and omit the band.

SMBJ30AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
30V
Voltage - Breakdown (Min):
33.3V
Voltage - Clamping (Max) @ Ipp:
48.4V
Current - Peak Pulse (10/1000µs):
12.4A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ30AHE3_A/H FAQ

1.How can I place an order for SMBJ30AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ30AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ30AHE3_A/H reliable?

The price and inventory of SMBJ30AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30AHE3_A/H is usually 5 days.

3.What payment methods are accepted for SMBJ30AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ30AHE3_A/H?

SMBJ30AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ30AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ30AHE3_A/H?

For technical support, including SMBJ30AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30AHE3_A/H requirements.

6.How does Aetrix verify that SMBJ30AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All SMBJ30AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30AHE3_A/H meets industry standards.

7.What is the process for return or replacement of SMBJ30AHE3_A/H?

All SMBJ30AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ30AHE3_A/H part is unused and in its original packaging.

Return procedure for SMBJ30AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ30AHE3_A/H Tags

  • SMBJ30AHE3_A/H
  • SMBJ30AHE3_A/H PDF
  • SMBJ30AHE3_A/H Datasheet
  • SMBJ30AHE3_A/H Specifications
  • SMBJ30AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ30AHE3_A/H
  • Buy SMBJ30AHE3_A/H
  • SMBJ30AHE3_A/H Price
  • SMBJ30AHE3_A/H Distributor
  • SMBJ30AHE3_A/H Supplier
  • SMBJ30AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER