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Vishay General Semiconductor - Diodes Division SMBJ30AHE3_A/I
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- Part No.:
- SMBJ30AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ30AHE3_A/I.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,046
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Product details
Overview
SMBJ30AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V maximum clamping voltage (VC) at 12.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), commonly deployed to safeguard MOSFET gate drivers and industrial sensor interfaces against ESD and inductive switching transients.
For engineers reviewing the SMBJ30AHE3_A/I datasheet, SMBJ30AHE3_A/I pinout, SMBJ30AHE3_A/I application, or SMBJ30AHE3_A/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data (RθJA = 100 °C/W), junction temperature range (−55 °C to +150 °C), and packaging details for reliable circuit protection design and component selection.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, leveraging a glass-passivated silicon junction for low incremental surge resistance and sub-nanosecond response time. Its 1.0 µA maximum reverse leakage at 30 V ensures minimal standby power loss in battery-backed systems.
The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports automated SMT placement, and meets J-STD-020 MSL Level 1 with 260 °C lead-free reflow peak temperature - confirming suitability for high-volume manufacturing without moisture sensitivity concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 24 V systems. |
| VBR (min/max) | 33.3 V / 36.8 V at 1 mA - Confirmed breakdown threshold ensuring predictable turn-on during transients. |
| VC @ IPPM | 48.4 V at 12.4 A - Clamped voltage under 10/1000 µs surge; determines protected IC's maximum stress level. |
| PPPM | 600 W - Peak pulse power handling capacity; enables suppression of high-energy inductive spikes (e.g., relay coil flyback). |
| TJ max. | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and industrial ambient environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient on standard 0.2″ × 0.2″ copper pads; informs PCB thermal layout requirements. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by a band on the body end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to system ground or lower-potential node. | Completes conduction path during transient clamping; must be routed with low-inductance trace to minimize overshoot. |
| Cathode | Current exit terminal in forward bias; marked by band; connected to protected line (e.g., 24 V rail or signal input). | Defines polarity-sensitive placement; reverse connection disables clamping function and risks device failure. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients from motor commutation or relay switching without degradation. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive electronics including engine control modules and ADAS sensor interfaces. |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients (<1 ns response). |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free assembly without baking or special handling. |
| Glass passivated junction | Ensures stable VBR over lifetime and improved humidity resistance versus epoxy-passivated alternatives. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
Use Scenario: Protection of IGBT gate driver supply rails against flyback voltage from solenoid valves and contactors. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between gate driver VDD and GND to limit transient excursions below IC absolute maximum ratings. Use Value: Prevents gate oxide damage and latch-up in 24 V industrial drives where repetitive 100 V+ spikes occur during load switching. |
Use Scenario: Surge suppression on LIN bus power line feeding door module microcontrollers. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing ISO 7637-2 Pulse 1/2a transients while maintaining <1 µA leakage at 12 V nominal. Use Value: Ensures uninterrupted communication during vehicle jump-start or load-dump events without resetting MCU or corrupting EEPROM. |
| Factory Automation Sensors | Telecom Power Feeds |
Use Scenario: Input protection for 4–20 mA current-loop transmitters exposed to field wiring surges. IC Role / Device Role / Timing Role: Series-connected TVS on loop supply line, clamping transients before precision DAC and op-amp front-end stages. Use Value: Maintains 0.1% measurement accuracy by limiting voltage excursion to ≤48.4 V during 1 kV/500 Ω surge tests. |
Use Scenario: Secondary-side overvoltage clamp on -48 V telecom rectifier outputs feeding base station RF amplifiers. IC Role / Device Role / Timing Role: Unidirectional TVS referenced to system ground, absorbing lightning-induced surges on DC distribution bus. Use Value: Enables compliance with ITU-T K.20/21 immunity standards while sustaining 100,000+ surge events without parameter drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30AHM3_A/I | Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. | No difference in circuit performance or layout; selected only when halogen-free compliance is mandated by OEM spec. | Choose SMBJ30AHM3_A/I if RoHS + halogen-free material declaration is required; otherwise SMBJ30AHE3_A/I suffices. |
| SMCJ30AHE3_A/I | Same VWM/VBR/VC specs but in larger SMC (DO-214AB) package; 1500 W PPPM rating vs. 600 W. | Higher power handling supports longer-duration transients (e.g., automotive load dump); requires larger PCB footprint. | Choose SMCJ30AHE3_A/I only when >600 W surge energy must be absorbed; SMBJ30AHE3_A/I is optimal for space-constrained 600 W designs. |
Compared with SMBJ30AHM3_A/I, SMBJ30AHE3_A/I offers identical protection performance with standard RoHS compliance; compared with SMCJ30AHE3_A/I, it trades higher power capability for 40% smaller board area - making SMBJ30AHE3_A/I the preferred choice for compact 24 V industrial and automotive ECUs where 600 W surge margin is sufficient.
Availability
SMBJ30AHE3_A/I is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, factory automation sensors, and telecom power feeds requiring stable component supply across production lifecycles.
Supply support for SMBJ30AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and high-volume manufacturability.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for robust, standardized transient suppression in automotive, industrial, and telecom infrastructure where repeatable clamping and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of SMBJ30AHE3_A/I at its rated peak pulse current?
The SMBJ30AHE3_A/I has a maximum clamping voltage (VC) of 48.4 V at 12.4 A peak pulse current (IPPM), measured under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on the protected circuit during surge events and is critical for ensuring downstream ICs remain within their absolute maximum ratings. The SMBJ30AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SMBJ30AHE3_A/I qualified for automotive applications?
Yes, SMBJ30AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD, validating its use in automotive body control modules, lighting drivers, and sensor interfaces. The SMBJ30AHE3_A/I meets automotive-grade reliability requirements without derating.
What is the thermal resistance of SMBJ30AHE3_A/I, and how does it affect PCB layout?
The SMBJ30AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2″ × 0.2″ (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard FR-4 PCB construction and guides minimum copper area allocation: reducing pad size increases RθJA, risking thermal runaway during repetitive surges. For high-duty-cycle applications, adding thermal vias under the pads lowers effective RθJA.
How does the HE3 suffix differ from E3 or HM3 in SMBJ30AHE3_A/I?
The "HE3" suffix in SMBJ30AHE3_A/I denotes RoHS-compliant construction with AEC-Q101 qualification, distinguishing it from "E3" (RoHS-compliant commercial grade only) and "HM3" (halogen-free + RoHS + AEC-Q101). All share identical electrical specs and SMB package, but only HE3 and HM3 meet automotive reliability standards. The "A/I" denotes 13″ tape-and-reel packaging with 3200 units per reel.
Can SMBJ30AHE3_A/I be used in bidirectional protection circuits?
No, SMBJ30AHE3_A/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. Bidirectional operation requires the "CA" suffix (e.g., SMBJ30CA). Using SMBJ30AHE3_A/I in a bidirectional configuration would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit. Always match suffix to polarity requirement.
SMBJ30AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 12.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ30AHE3_A/I FAQ
1.How can I place an order for SMBJ30AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ30AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ30AHE3_A/I reliable?
The price and inventory of SMBJ30AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ30AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ30AHE3_A/I?
SMBJ30AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ30AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ30AHE3_A/I?
For technical support, including SMBJ30AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ30AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ30AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ30AHE3_A/I?
All SMBJ30AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ30AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ30AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ30AHE3_A/I Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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