Vishay General Semiconductor - Diodes Division SMBJ30AHE3_B/H
- Part No.:
- SMBJ30AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ30AHE3_B/H.pdf
- Description:
- 600W,30V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ30AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V maximum clamping voltage (VC) at 12.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), used for protecting MOSFETs, ICs, and sensor signal lines in industrial and automotive electronics.
For engineers reviewing the SMBJ30AHE3_B/H datasheet, SMBJ30AHE3_B/H pinout, SMBJ30AHE3_B/H application, or SMBJ30AHE3_B/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, clamping performance under 10/1000 µs surge, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on standard PCB pad layouts.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low leakage (<1.0 µA at VWM), while the low incremental surge resistance enables rapid energy absorption during ESD or lightning-induced transients.
The SMBJ30AHE3_B/H is rated for 150 °C maximum junction temperature and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its AEC-Q101 qualification confirms suitability for automotive applications where reliability under thermal cycling and mechanical stress is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 24 V nominal systems. |
| VBR min/max | 33.3 V / 36.8 V at 1 mA - Confirmed breakdown range ensures predictable turn-on behavior across production lots. |
| VC @ IPPM | 48.4 V at 12.4 A - Clamping voltage under standardized 10/1000 µs surge; determines protected circuit's maximum transient exposure. |
| PPPM | 600 W - Peak pulse power handling capability with 0.01% duty cycle; supports repetitive surge events in motor drive or power supply inputs. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; guides heatsinking requirements for sustained surge duty. |
| TJ max | +150 °C - Maximum junction temperature rating; enables operation in under-hood automotive or industrial enclosures. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix), polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path); conducts during forward surge or test conditions. |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., 24 V rail or sensor input); initiates avalanche conduction when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 Level 3 surges without derating in compact SMB footprint. |
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics where long-term reliability under thermal and vibration stress is mandatory. |
| Glass passivated junction | Ensures stable VBR over time and temperature, minimizing drift in clamping threshold across 15-year service life. |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow profiles without moisture-related popcorning or delamination risk. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage stress on downstream ICs-critical for protecting 3.3 V or 5 V logic interfaces fed from 24 V supplies. |
Applications
| Automotive Power Distribution | Industrial Sensor Signal Protection |
|---|---|
|
Use Scenario: Protecting 24 V supply rails feeding ECUs, lighting modules, and actuators from load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed at board-level input filter stage, upstream of DC/DC converters and LDOs. Use Value: Limits transient voltage to ≤48.4 V during 12 V/24 V load dump events, preventing damage to automotive-grade microcontrollers and CAN transceivers. |
Use Scenario: Shielding analog outputs of pressure, temperature, or position sensors from ESD and cable discharge events in factory automation. IC Role / Device Role / Timing Role: Low-capacitance (typ. <100 pF) clamping element on 0–10 V or 4–20 mA output lines, adjacent to connector interface. Use Value: Maintains signal integrity by clamping fast-rising ESD pulses (<1 ns rise time) while adding negligible loading to precision analog circuits. |
| Telecom Power Input Protection | Consumer Appliance Motor Drive Inputs |
|
Use Scenario: Safeguarding AC/DC adapter inputs and PoE-powered equipment front-ends against lightning-induced surges on outdoor Ethernet or power lines. IC Role / Device Role / Timing Role: Primary-level TVS in series with MOVs or GDTs, providing fast-response clamping before slower bulk protectors activate. Use Value: Absorbs initial 600 W surge energy within microseconds, reducing stress on secondary-stage protection and extending overall system MTBF. |
Use Scenario: Protecting H-bridge gate drivers and MCU I/O pins in washing machines, HVAC blowers, and power tools from inductive kickback. IC Role / Device Role / Timing Role: Localized TVS mounted directly at motor connector or driver IC power pins to minimize loop inductance. Use Value: Suppresses >100 V spikes generated during MOSFET turn-off, eliminating false resets and latch-up in embedded motor control firmware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30AHM3_B/H | Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. | No functional difference; selected when halogen-free compliance is mandated by OEM environmental specifications. | Choose SMBJ30AHM3_B/H if RoHS + halogen-free material declaration is required for final product certification. |
| SMCJ30AHE3_A/H | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher RθJA (60 °C/W) and 1500 W PPPM rating. | Better thermal performance and surge margin; requires larger PCB area and different pad layout. | Choose SMCJ30AHE3_A/H when system-level surge testing exceeds 600 W or board layout allows SMC footprint. |
Compared with SMBJ30AHE3_B/H, the HM3 variant offers identical protection performance with halogen-free materials, while the SMCJ30AHE3_A/H provides higher surge capacity at the cost of increased board space-enabling trade-offs between miniaturization and ruggedness in high-reliability designs.
Availability
SMBJ30AHE3_B/H is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interfaces, telecom power inputs, and consumer appliance motor drives requiring stable component supply and AEC-Q101 traceability.
Supply support for SMBJ30AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-speed transient suppression in automotive, industrial, and communications infrastructure where precise clamping, low leakage, and AEC-Q101 validation are essential.
FAQ
What is the maximum clamping voltage of SMBJ30AHE3_B/H under a 10/1000 µs surge?
The SMBJ30AHE3_B/H has a maximum clamping voltage (VC) of 48.4 V at 12.4 A peak pulse current (IPPM) under the standardized 10/1000 µs waveform. This value is guaranteed across temperature and production lot, ensuring consistent overvoltage protection for downstream 3.3 V or 5 V logic circuits powered from 24 V rails. The SMBJ30AHE3_B/H datasheet specifies this parameter in Table 1 under ELECTRICAL CHARACTERISTICS.
Is SMBJ30AHE3_B/H qualified for automotive applications?
Yes, SMBJ30AHE3_B/H is AEC-Q101 qualified, as confirmed in the Vishay document 88392 revision 09-Jan-2024, Section "MECHANICAL DATA". This qualification covers stress tests including temperature cycling, high-temperature operating life, and mechanical shock-making SMBJ30AHE3_B/H suitable for engine control units, body electronics, and ADAS power domains where reliability is non-negotiable.
What is the thermal resistance of SMBJ30AHE3_B/H, and how does it affect layout?
The SMBJ30AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Vishay's package drawing. To maintain safe junction temperatures during repetitive surges, designers must ensure adequate copper area and avoid excessive trace length between SMBJ30AHE3_B/H and ground/power planes.
How does the HE3 suffix in SMBJ30AHE3_B/H differ from E3 or M3?
The HE3 suffix in SMBJ30AHE3_B/H denotes RoHS-compliant construction with AEC-Q101 qualification, distinguishing it from E3 (RoHS-compliant commercial grade) and M3 (halogen-free RoHS-compliant commercial grade). The "H" prefix in HE3 explicitly signals automotive qualification, while "E3" confirms lead-free matte tin plating and JESD201 Class 2 whisker resistance-critical for long-life automotive deployments.
Can SMBJ30AHE3_B/H be used in bidirectional configurations?
No, SMBJ30AHE3_B/H is a unidirectional TVS diode, as indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ30CA). Using SMBJ30AHE3_B/H in reverse-biased AC applications would result in forward conduction and potential failure; always verify polarity alignment in schematic and layout for SMBJ30AHE3_B/H.
SMBJ30AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 12.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ30AHE3_B/H FAQ
1.How can I place an order for SMBJ30AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ30AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ30AHE3_B/H reliable?
The price and inventory of SMBJ30AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ30AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ30AHE3_B/H?
SMBJ30AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ30AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ30AHE3_B/H?
For technical support, including SMBJ30AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30AHE3_B/H requirements.
6.How does Aetrix verify that SMBJ30AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ30AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ30AHE3_B/H?
All SMBJ30AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ30AHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ30AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ30AHE3_B/H Tags

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Toshiba Semiconductor and Storage

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