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Vishay General Semiconductor - Diodes Division SMBJ30CD-M3/I
- Part No.:
- SMBJ30CD-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ30CD-M3/I.pdf
- Description:
- TVS DIODE 30VWM 47.7VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,528
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Product details
Overview
SMBJ30CD-M3/I from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping ESD and surge transients on signal/power lines. It features 30 V stand-off voltage (VWM), 33.8–36.3 V breakdown voltage (VBR) at 1 mA, 47.7 V maximum clamping voltage (VC) at 12.6 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform).
For engineers reviewing the SMBJ30CD-M3/I datasheet, SMBJ30CD-M3/I pinout, SMBJ30CD-M3/I application, or SMBJ30CD-M3/I equivalent, this device is selected for robust overvoltage protection in bidirectional data lines, DC power rails, and sensor interfaces where tight VBR tolerance (±3.5 %), low leakage (<0.5 μA at VWM), and MSL Level 1 reflow compatibility are critical.
Technical Context
This bidirectional TVS operates symmetrically across both polarities, with identical electrical characteristics in forward and reverse directions-enabling protection of AC-coupled or floating signal paths without polarity constraints. Its silicon avalanche structure delivers sub-nanosecond response time and low dynamic impedance to limit transient energy before downstream components are stressed.
The device is rated for 600 W peak pulse power under 10/1000 μs waveform with 0.01 % duty cycle, and derates linearly above 25 °C ambient per Fig. 2. Thermal resistance junction-to-ambient is 125 °C/W on minimum recommended pad layout, supporting reliable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse voltage before significant leakage; defines safe operating margin for 24 V DC systems. |
| VBR min/max | 33.8 V / 36.3 V at 1 mA - Tight ±3.5 % tolerance ensures predictable turn-on across production lots. |
| VC @ IPPM | 47.7 V at 12.6 A - Clamping voltage during 600 W surge; limits stress on protected ICs like RS-485 transceivers. |
| PPPM | 600 W (10/1000 μs) - Sustains high-energy transients from inductive switching or lightning-induced surges. |
| ID @ VWM | <0.5 μA - Negligible standby leakage preserves battery life in always-on sensor nodes. |
| Package | SMB (DO-214AA) - Surface-mount footprint compatible with automated assembly; meets UL 94 V-0 flammability. |
| MSL Level | Level 1 (260 °C peak) - Supports standard lead-free reflow without preconditioning or dry-pack requirements. |
Pinout & Package
Two-terminal bidirectional device in SMB (DO-214AA) package; no polarity marking (no cathode band). Terminals are matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102, with M3 suffix indicating halogen-free, RoHS-compliant, industrial-grade construction meeting JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient conduction path | Both terminals function identically; conducts avalanche current in either direction when voltage exceeds VBR. |
| Case (body) | Thermal and mechanical interface | Exposed copper pad area (min. 5.0 mm × 5.0 mm) required for thermal dissipation; no electrical connection. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with system overvoltage thresholds without margin stacking. |
| 600 W peak pulse rating | Withstands IEC 61000-4-5 Level 4 (4 kV/2 Ω) surge events on 24 V supply rails. |
| Low 0.5 μA leakage at VWM | Minimizes quiescent current draw in battery-powered IoT edge sensors. |
| MSL Level 1 reflow compatibility | Eliminates moisture sensitivity handling; supports direct placement into standard Pb-free reflow profiles. |
| Halogen-free & RoHS-compliant (M3) | Fulfills environmental compliance for industrial and telecom equipment sold globally. |
Applications
| Industrial Sensor Interface | RS-485 Communication Line |
|---|---|
Use Scenario: Protecting analog output (4–20 mA) and digital I/O lines of pressure/temperature sensors in factory automation cabinets exposed to relay coil flyback and motor drive noise. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across differential signal pair or between signal and ground to shunt transient energy before it reaches ADC or microcontroller GPIO. Use Value: Prevents latch-up or permanent damage to precision op-amps and isolation amplifiers by limiting voltage excursion to ≤47.7 V during 1 kV/500 Ω surge events. | Use Scenario: Safeguarding half-duplex RS-485 transceivers (e.g., MAX13487) in building management systems subject to cable-induced lightning surges and ground potential differences. IC Role / Device Role / Timing Role: Symmetrical TVS connected between A/B bus lines and ground to clamp common-mode and differential-mode transients without disrupting DC bias or signal integrity. Use Value: Maintains data integrity during 10/1000 μs surges up to 600 W while adding <1 pF capacitance-no signal rise-time degradation on 10 Mbps links. |
| DC Power Input Protection | Automotive Body Control Module |
Use Scenario: Input-stage surge suppression on 24 V DC power supplies feeding PLC I/O modules, guarding against load dump and ISO 7637-2 Pulse 1/2a transients. IC Role / Device Role / Timing Role: Primary clamping device placed upstream of DC-DC converters and LDOs to absorb energy before regulation stage. Use Value: Limits input rail overshoot to 47.7 V during 100 V/50 ms load dump events, preventing overvoltage shutdown or capacitor failure in downstream regulators. | Use Scenario: Protecting LIN bus transceivers and switch inputs in automotive body control units subjected to battery disconnect transients and alternator load dump. IC Role / Device Role / Timing Role: Bidirectional TVS on LIN data line (VPW) referenced to chassis ground to suppress coupled spikes from adjacent high-current circuits. Use Value: Ensures uninterrupted communication during ISO 16750-2 transient tests (Pulse 5a: +110 V/100 ms) by clamping within specification without latch-up or parametric shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30CA-E3/52 (Vishay) | Same VWM/VBR/VC specs; differs only in packaging (tape/reel quantity and reel diameter) and M3 vs. -E3 suffix compliance grading. | No functional difference; -E3 is automotive-grade variant with extended qualification testing but identical electrical performance. | Select SMBJ30CD-M3/I for industrial-grade cost-optimized volume procurement with full RoHS/halogen-free compliance. |
| 1.5SMC33CA (ON Semiconductor) | Same SMB package and bidirectional 33 V rating; slightly higher VC (49.9 V at 12.0 A) and lower IPPM (12.0 A vs. 12.6 A); 1.5 kW peak rating but same 600 W derated to 10/1000 μs. | Higher clamping voltage may reduce margin for 3.3 V logic interfaces; suitable where tighter VBR tolerance is not required. | Choose 1.5SMC33CA only if legacy design uses ON Semi footprint and minor VC increase is acceptable. |
Compared with SMBJ30CD-M3/I, SMBJ30CA-E3/52 offers identical protection performance with automotive qualification overhead, while 1.5SMC33CA trades ±3.5 % VBR tolerance and 0.5 μA leakage for broader industry availability-making SMBJ30CD-M3/I optimal for precision industrial designs requiring guaranteed tight tolerance and ultra-low leakage.
Availability
SMBJ30CD-M3/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, RS-485 communication lines, and DC power input protection requiring stable component supply, long-term lifecycle support, and consistent M3-grade compliance.
Supply support for SMBJ30CD-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in harsh industrial, telecom, and automotive environments where repeatable clamping performance and long-term stability are mandatory.
FAQ
What is the exact breakdown voltage range for SMBJ30CD-M3/I?
The SMBJ30CD-M3/I has a guaranteed breakdown voltage (VBR) range of 33.8 V to 36.3 V at test current IT = 1 mA, corresponding to ±3.5 % tolerance around the nominal 30 V stand-off rating. This tight tolerance is confirmed in the Vishay datasheet Document Number 87606, Table on page 2, row labeled "(+)SMBJ30CD".
Is SMBJ30CD-M3/I unidirectional or bidirectional?
SMBJ30CD-M3/I is a bidirectional transient voltage suppressor, indicated by the "CD" suffix per Vishay's naming convention. Electrical characteristics-including VBR, VC, and IPPM-are identical in both polarities, enabling symmetrical clamping on AC-coupled or floating signal lines without polarity concerns.
What does the "M3" suffix mean in SMBJ30CD-M3/I?
The "M3" suffix in SMBJ30CD-M3/I denotes halogen-free, RoHS-compliant construction with matte tin-plated leads, industrial-grade qualification, and compliance with JESD 201 Class 2 whisker resistance. It also indicates MSL Level 1 rating for lead-free reflow processing at up to 260 °C peak temperature.
Can SMBJ30CD-M3/I be used in automotive applications?
SMBJ30CD-M3/I is qualified for industrial-grade operation (−55 °C to +150 °C TJ) and meets key automotive-relevant requirements such as MSL Level 1 and RoHS compliance, but it is not AEC-Q200 qualified. For automotive body electronics, use Vishay's automotive-grade variant SMBJ30CA-E3/52 instead of SMBJ30CD-M3/I.
What is the maximum clamping voltage of SMBJ30CD-M3/I under surge conditions?
The maximum clamping voltage (VC) of SMBJ30CD-M3/I is 47.7 V at peak pulse current IPPM = 12.6 A, measured under the standardized 10/1000 μs double-exponential surge waveform. This value is specified in the Vishay SMBJ5.0D–SMBJ120CD datasheet (Doc. #87606, page 2) and defines the upper voltage limit imposed on protected circuitry during worst-case transient events.
SMBJ30CD-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.8V
- Voltage - Clamping (Max) @ Ipp:
- 47.7V
- Current - Peak Pulse (10/1000µs):
- 12.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ30CD-M3/I FAQ
1.How can I place an order for SMBJ30CD-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ30CD-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ30CD-M3/I reliable?
The price and inventory of SMBJ30CD-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30CD-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ30CD-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30CD-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ30CD-M3/I?
SMBJ30CD-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ30CD-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ30CD-M3/I?
For technical support, including SMBJ30CD-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30CD-M3/I requirements.
6.How does Aetrix verify that SMBJ30CD-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ30CD-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30CD-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ30CD-M3/I?
All SMBJ30CD-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30CD-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ30CD-M3/I part is unused and in its original packaging.
Return procedure for SMBJ30CD-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ30CD-M3/I Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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