Vishay General Semiconductor - Diodes Division SMBJ30C-E3/52
- Part No.:
- SMBJ30C-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ30C-E3/52.pdf
- Description:
- TVS DIODE 30VWM 53.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ30C-E3/52 from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection on signal and power lines. It features a 30 V stand-off voltage (VWM), 48.4 V maximum clamping voltage (VC) at 12.4 A peak pulse current, and 600 W peak pulse power dissipation with a 10/1000 µs waveform - deployed in industrial sensor interfaces and telecom line protection.
For engineers reviewing the SMBJ30C-E3/52 datasheet, SMBJ30C-E3/52 pinout, SMBJ30C-E3/52 application, or SMBJ30C-E3/52 equivalent, key selection criteria include bidirectional clamping symmetry, low leakage (<1.0 µA at 30 V), MSL Level 1 moisture sensitivity, and compatibility with automated SMT placement on SMB (DO-214AA) footprint.
Technical Context
The SMBJ30C-E3/52 operates as a silicon avalanche diode with symmetrical breakdown characteristics in both polarities, enabling suppression of positive and negative transients without polarity dependency. Its glass-passivated junction ensures stable VBR (min 33.3 V, max 36.8 V at 1 mA) and low temperature coefficient (0.099 %/°C).
It delivers sub-nanosecond response to ESD and lightning-induced surges, with clamping performance validated under standardized 10/1000 µs waveform testing. Thermal resistance is rated at 100 °C/W (junction-to-ambient) on minimum recommended pad layout, supporting operation from –55 °C to +150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before significant leakage; defines safe working margin below clamping threshold |
| VBR (min/max) | 33.3 V / 36.8 V at 1 mA - Confirmed bidirectional breakdown range; ensures reliable turn-on during overvoltage events |
| VC @ IPPM | 48.4 V at 12.4 A - Measured clamping voltage under 10/1000 µs surge; limits protected circuit stress during worst-case transients |
| PPPM | 600 W - Peak pulse power handling capability; supports repetitive surge duty cycle up to 0.01 % |
| ID @ VWM | <1.0 µA - Reverse leakage at stand-off voltage; minimizes standby power loss and signal integrity impact |
| Package | SMB (DO-214AA) - Standardized 2-pin surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height |
| Mounting | Matte tin-plated leads, solderable per J-STD-002/JESD 22-B102; qualified for reflow peak of 260 °C (MSL Level 1) |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional device with no polarity marking - terminals are symmetrical anode/cathode pairs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (symmetrical) | Bidirectional avalanche junction | Either terminal serves as anode or cathode depending on transient polarity; no band marking required |
| Cathode Band (absent) | N/A - bidirectional construction | Device lacks polarity indicator; orientation independent in PCB layout |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against IEC 61000-4-5 Level 4 surges (4 kV line-to-ground) without external series impedance |
| Low clamping ratio (VC/VWM = 1.61) | Minimizes voltage overshoot across protected ICs - critical for 3.3 V and 5 V logic interfacing |
| MSL Level 1, 260 °C reflow compatible | Eliminates pre-baking requirement and supports standard high-volume SMT assembly processes |
| Glass-passivated junction | Ensures long-term parameter stability and resistance to humidity-induced degradation in industrial environments |
| RoHS-compliant, halogen-free option available | Meets IPC-1752A material declaration requirements for automotive and green electronics programs |
Applications
| Industrial Sensor Interface | Telecom Line Protection |
|---|---|
|
Use Scenario: Protecting RS-485 transceivers and analog sensor outputs (e.g., 4–20 mA loops) from inductive switching noise and EFT bursts. IC Role / Device Role / Timing Role: Bidirectional clamping element placed directly at connector entry point, shunting transients before reaching signal conditioning circuitry. Use Value: Maintains signal fidelity under repeated 1 kV/500 A surge events while adding zero propagation delay or loading to DC signal path. |
Use Scenario: Shielding Ethernet PHYs and DSL line drivers from lightning-induced common-mode surges on twisted-pair cables. IC Role / Device Role / Timing Role: Primary front-end TVS in hybrid protection scheme, paired with gas discharge tube (GDT) for high-energy diversion. Use Value: Clamps differential surges to <50 V within 1 ns, preserving PHY latch-up immunity and meeting GR-1089-CORE Level 3 requirements. |
| Automotive Body Control Module | Consumer Power Adapter Input Stage |
|
Use Scenario: Safeguarding LIN bus transceivers and microcontroller GPIOs against load dump and ISO 7637-2 Pulse 1/2a/5a transients. IC Role / Device Role / Timing Role: Secondary-level TVS after upstream fuse and choke filtering; handles residual fast-edge spikes missed by bulk filters. Use Value: AEC-Q101-qualified variants available; SMBJ30C-E3/52 provides validated clamping margin above 24 V system nominal with 30 V VWM. |
Use Scenario: Suppressing AC line surges and capacitor discharge transients on secondary-side DC outputs of wall adapters and USB PD chargers. IC Role / Device Role / Timing Role: Final-stage protector downstream of DC-DC converter, preventing overvoltage damage to connected devices (e.g., smartphones, IoT hubs). Use Value: Low leakage (<1 µA) avoids battery drain in always-on USB ports; 48.4 V clamping protects 5 V/9 V/12 V output rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30CA-T | Same VWM/VC specs, but packaged in tape-and-reel with different reel code (T vs. 52); identical electrical and thermal performance | No functional difference; selected when procurement requires alternate packaging logistics or distributor-specific SKU alignment | Drop-in replacement if reel size (7″ vs. 13″) and carrier tape specifications match production line requirements |
| 1.5KE30CA | Through-hole TO-218 package; higher PPPM (1500 W) but larger footprint and slower thermal response; VC = 48.4 V same | Used where board space allows through-hole mounting and higher single-event energy absorption is prioritized over density | Not pin-compatible; requires PCB redesign; preferred only for legacy systems or ultra-high-energy test environments |
Compared with SMBJ30C-E3/52, SMBJ30CA-T offers identical protection performance with alternate packaging logistics, while 1.5KE30CA trades surface-mount compactness for higher pulse energy handling in through-hole form - making SMBJ30C-E3/52 optimal for space-constrained, high-density SMT designs requiring repeatable surge immunity.
Availability
SMBJ30C-E3/52 is available at Aetrix Electronics and suitable for industrial sensor interface, telecom line protection, automotive body control module, and consumer power adapter input stage applications requiring stable component supply and full traceability.
Supply support for SMBJ30C-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series is engineered for high-reliability transient suppression in harsh environments - targeting industrial automation, automotive subsystems, and infrastructure equipment where consistent clamping performance and long-term stability are mandatory.
FAQ
What is the breakdown voltage range of SMBJ30C-E3/52?
The SMBJ30C-E3/52 has a bidirectional breakdown voltage (VBR) range of 33.3 V to 36.8 V at 1 mA test current, measured across both polarities. This confirmed range ensures predictable turn-on behavior during positive and negative transients, and is specified in Vishay's official datasheet revision 09-Jan-2024 (Document Number: 88392). The SMBJ30C-E3/52 maintains this tolerance across its full operating temperature range.
Is SMBJ30C-E3/52 RoHS-compliant and lead-free?
Yes, SMBJ30C-E3/52 is RoHS-compliant and lead-free, as indicated by the "E3" suffix per Vishay's ordering nomenclature. It uses matte tin-plated leads and meets JESD 201 Class 2 whisker resistance requirements. The molding compound complies with UL 94 V-0 flammability rating, and the device is rated for peak reflow temperatures up to 260 °C - fully aligned with modern lead-free manufacturing standards.
How does SMBJ30C-E3/52 differ from unidirectional SMBJ30A-E3/52?
SMBJ30C-E3/52 is bidirectional with symmetrical clamping in both directions and no cathode band marking, whereas SMBJ30A-E3/52 is unidirectional with a marked cathode end and only conducts in reverse bias. Their VWM (30 V) and VC (48.4 V) are identical, but SMBJ30C-E3/52 supports AC-coupled or polarity-agnostic signal lines, while SMBJ30A-E3/52 is used where DC polarity is fixed and forward conduction must be blocked.
What is the maximum clamping voltage of SMBJ30C-E3/52 under surge conditions?
The SMBJ30C-E3/52 exhibits a maximum clamping voltage (VC) of 48.4 V at 12.4 A peak pulse current (IPPM) under the standardized 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and represents the upper limit of voltage seen by downstream circuitry during worst-case transient events - a critical parameter for ensuring protected ICs remain within absolute maximum ratings.
Can SMBJ30C-E3/52 be used in automotive applications?
SMBJ30C-E3/52 itself is commercial-grade (E3 suffix), but Vishay offers AEC-Q101-qualified versions under HE3/HM3 suffixes (e.g., SMBJ30CHE3_B). While SMBJ30C-E3/52 meets key electrical and thermal specs for automotive use, formal qualification requires the HE3 variant. For non-safety-critical body electronics or prototyping, SMBJ30C-E3/52 is often deployed - however, production automotive designs should specify the AEC-Q101 version to ensure compliance with stress-test requirements.
SMBJ30C-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 53.5V
- Current - Peak Pulse (10/1000µs):
- 11.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ30C-E3/52 FAQ
1.How can I place an order for SMBJ30C-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ30C-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ30C-E3/52 reliable?
The price and inventory of SMBJ30C-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30C-E3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ30C-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30C-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ30C-E3/52?
SMBJ30C-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ30C-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ30C-E3/52?
For technical support, including SMBJ30C-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30C-E3/52 requirements.
6.How does Aetrix verify that SMBJ30C-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ30C-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30C-E3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ30C-E3/52?
All SMBJ30C-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30C-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ30C-E3/52 part is unused and in its original packaging.
Return procedure for SMBJ30C-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ30C-E3/52 Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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