My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ30CHE3/5B
;;2.jpg)
- Part No.:
- SMBJ30CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ30CHE3/5B.pdf
- Description:
- TVS DIODE 30VWM 53.5VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,898
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ30CHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V maximum clamping voltage (VC) at 12.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform). It protects MOSFETs, ICs, and sensor signal lines in industrial and automotive electronics.
For engineers reviewing the SMBJ30CHE3/5B datasheet, SMBJ30CHE3/5B pinout, SMBJ30CHE3/5B application, or SMBJ30CHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a clamping device that remains high-impedance below VWM (30 V) and rapidly transitions to low-impedance conduction above VBR (min. 33.3 V) to limit transient overvoltage. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns).
The SMBJ30CHE3/5B is rated for 600 W peak pulse power under 10/1000 µs waveform with 0.01% duty cycle, and supports repetitive surge events when thermally managed via its RθJA of 100 °C/W. Its cathode-band marking and matte tin-plated leads comply with J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC/AC working margin. |
| VBR (min/max) | 33.3 V / 36.8 V at IT = 1 mA - Breakdown onset range; ensures reliable triggering above system operating voltage. |
| VC @ IPPM | 48.4 V at 12.4 A - Clamped voltage during 10/1000 µs surge; determines protected circuit's maximum transient exposure. |
| PPPM | 600 W - Peak pulse power handling capability; defines transient energy absorption capacity per event. |
| ID @ VWM | 1.0 µA - Reverse leakage at stand-off voltage; critical for low-power sensor or battery-backed circuits. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or industrial ambient environments. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 0.205" × 0.130" footprint; compatible with IPC-7351B land patterns. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode identified by a band on the body; meets UL 94 V-0 flammability rating and MSL Level 1 (260 °C reflow peak).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lower-potential rail; completes clamping path during positive transients on cathode side. |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 24 V supply or sensor output); conducts surge current to anode when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness - suitable for engine control, ADAS, and infotainment systems. |
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients from inductive load switching (e.g., solenoids, relays) without degradation across >10⁴ cycles. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage stress on downstream ICs - e.g., keeps 3.3 V or 5 V logic inputs within safe absolute maximum ratings during surge events. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage drift over time and temperature - critical for long-life industrial deployments. |
| MSL Level 1, 260 °C peak reflow | Supports standard lead-free SMT assembly without pre-baking; eliminates moisture-related popcorning risk during PCB reflow. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Suppressing load-dump and jump-start transients on 24 V vehicle power distribution networks. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between battery rail and DC-DC converter input. Use Value: Limits voltage to ≤48.4 V during 12.4 A surge, preventing damage to automotive-grade PMICs and microcontrollers. |
Use Scenario: Protecting analog outputs of pressure or temperature sensors exposed to ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS connected between sensor output and ground, upstream of ADC input. Use Value: Sub-1 ns response clamps ±8 kV contact ESD (IEC 61000-4-2) while adding <0.5 pF parasitic capacitance to preserve signal integrity. |
| Motor Drive Gate Driver Protection | Telecom DC Power Input Protection |
|
Use Scenario: Shielding high-side gate drivers from Miller-induced voltage spikes during MOSFET/IGBT switching. IC Role / Device Role / Timing Role: TVS placed between gate driver output and power switch gate, referenced to source/emitter. Use Value: Clamps gate-source voltage to safe levels (<20 V) during dV/dt-induced coupling, avoiding unintended turn-on or oxide breakdown. |
Use Scenario: Safeguarding PoE-powered equipment front-end against lightning-induced surges on 48 V DC input lines. IC Role / Device Role / Timing Role: Primary-stage TVS on DC input before DC-DC conversion and isolation. Use Value: Absorbs 600 W transient energy per IEC 61000-4-5 (Combination Wave) without failure, maintaining system uptime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30AHE3/5B | Same electrical specs and AEC-Q101 qualification; differs only in packaging suffix notation (HE3 vs HE3/5B denotes same AEC-Q101 grade). | No functional difference; identical use in automotive and industrial designs. | Select SMBJ30AHE3/5B only if internal BOM or ERP system requires explicit "A" suffix for unidirectional variant identification. |
| SMCJ30AHE3/5B | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher thermal mass yields RθJA = 50 °C/W and 1500 W PPPM rating. | Better suited for high-repetition-rate surges or elevated ambient temperatures (>85 °C) where SMB thermal limits are exceeded. | Choose SMCJ30AHE3/5B when board space allows and thermal derating margins are insufficient with SMBJ30CHE3/5B. |
Compared with SMBJ30CHE3/5B, SMBJ30AHE3/5B offers identical protection performance in the same footprint, while SMCJ30AHE3/5B trades size for higher surge endurance and thermal headroom - enabling longer lifetime in harsh, high-duty-cycle environments.
Availability
SMBJ30CHE3/5B is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface design, motor drive gate driver safeguarding, telecom DC input hardening, and AEC-Q101-compliant embedded systems requiring stable component supply across production lifecycles.
Supply support for SMBJ30CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for robust transient suppression in automotive, industrial, and communications infrastructure where high surge immunity and long-term stability are mandatory.
FAQ
What is the polarity configuration of SMBJ30CHE3/5B?
SMBJ30CHE3/5B is a unidirectional TVS diode, with cathode identified by a band on the package body. It conducts only when the cathode is biased positively relative to the anode - making it ideal for protecting DC power rails and single-polarity signal lines. Its behavior differs from bidirectional variants (e.g., SMBJ30CHE3/5B does not conduct for negative transients unless paired with complementary devices.
Does SMBJ30CHE3/5B meet automotive qualification standards?
Yes, SMBJ30CHE3/5B is AEC-Q101 qualified, as confirmed by Vishay's documentation and ordering code suffix "HE3". This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD - validating its suitability for under-hood and chassis-mounted automotive electronics where reliability is mission-critical.
What is the maximum clamping voltage of SMBJ30CHE3/5B under surge conditions?
The maximum clamping voltage (VC) of SMBJ30CHE3/5B is 48.4 V, measured at 12.4 A peak pulse current using the standardized 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during transient events and must be compared directly against the absolute maximum ratings of downstream components like microcontrollers or gate drivers.
How does SMBJ30CHE3/5B differ from SMBJ30AHE3/5B?
SMBJ30CHE3/5B and SMBJ30AHE3/5B are electrically and mechanically identical - both are unidirectional, AEC-Q101-qualified, SMB-packaged TVS diodes with matching VWM, VBR, VC, and PPPM specifications. The "C" vs "A" suffix reflects historical Vishay nomenclature; modern documentation treats them as functionally interchangeable parts with no performance or qualification differences.
Can SMBJ30CHE3/5B be used in bidirectional protection applications?
No - SMBJ30CHE3/5B is strictly unidirectional and will not suppress negative-going transients on the cathode terminal. For bidirectional protection, Vishay specifies parts with "CA" suffix (e.g., SMBJ30CAHE3/5B). Using SMBJ30CHE3/5B in bidirectional scenarios risks unprotected negative excursions that may damage sensitive inputs or violate system-level EMC requirements.
SMBJ30CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 53.5V
- Current - Peak Pulse (10/1000µs):
- 11.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ30CHE3/5B FAQ
1.How can I place an order for SMBJ30CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ30CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ30CHE3/5B reliable?
The price and inventory of SMBJ30CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ30CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ30CHE3/5B?
SMBJ30CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ30CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ30CHE3/5B?
For technical support, including SMBJ30CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30CHE3/5B requirements.
6.How does Aetrix verify that SMBJ30CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ30CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ30CHE3/5B?
All SMBJ30CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ30CHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ30CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ30CHE3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
