Vishay General Semiconductor - Diodes Division SMBJ30HE3/5B
- Part No.:
- SMBJ30HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ30HE3/5B.pdf
- Description:
- TVS DIODE 30VWM 53.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ30HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 30 V stand-off voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V maximum clamping voltage (VC) at 12.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ30HE3/5B datasheet, SMBJ30HE3/5B pinout, SMBJ30HE3/5B application, or SMBJ30HE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode operates as a voltage-clamping device triggered by transient overvoltage events, leveraging an avalanche breakdown mechanism. Its glass-passivated junction ensures stable reverse leakage (<1.0 µA at VWM) and fast response time (<1.0 ns), enabling protection of sensitive downstream circuitry against inductive switching spikes and ESD.
The SMBJ30HE3/5B is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports automated SMT placement, and meets J-STD-020 MSL Level 1 with 260 °C reflow peak. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating margin below breakdown. |
| VBR min/max | 33.3 V / 36.8 V at IT = 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on during transients. |
| VC @ IPPM | 48.4 V at 12.4 A - Clamped voltage seen by protected circuit under 600 W 10/1000 µs surge; limits stress on downstream components. |
| PPPM | 600 W - Peak pulse power handling capability; validates robustness against common lightning and switching surge waveforms. |
| IFSM | 100 A - Single half-sine surge current rating (8.3 ms); supports high-energy fault conditions without failure. |
| TJ max | +150 °C - Maximum junction temperature; enables reliable operation in enclosed industrial enclosures or under sustained load. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs heatsinking requirements for repetitive surges. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (unidirectional) | Connected to lower-potential side of protected line; forms cathode-to-anode avalanche path during overvoltage. |
| Cathode | Reverse-biased terminal (marked with band) | Connected to higher-potential rail (e.g., VCC or signal line); defines polarity-sensitive clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for under-hood and ADAS power rails. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage (<1.0 µA) across temperature and lifetime - critical for low-power sensor interfaces. |
| 600 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV line-earth) without degradation when properly mounted on recommended pad layout. |
| MSL Level 1, 260 °C peak | Enables single-reflow assembly without moisture sensitivity concerns - eliminates baking requirement in high-volume SMT lines. |
| UL 497B recognized (QVGQ2) | Meets Underwriters Laboratories requirements for telecom and industrial surge protection devices - simplifies end-equipment certification. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of gate drivers and microcontroller I/O pins against inductive kickback from relay coils and solenoid loads. IC Role / Device Role / Timing Role: Unidirectional clamping device placed between VDD and ground or across MOSFET gate-source terminals. Use Value: Limits transient voltage to ≤48.4 V during 12.4 A surges, preventing latch-up or oxide damage in 3.3 V/5 V logic circuits. |
Use Scenario: Surge suppression on LIN bus lines and power inputs of door module ECUs exposed to load dump and jump-start conditions. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V supply rail upstream of DC-DC converters and CAN/LIN transceivers. Use Value: Withstands 100 A 8.3 ms surge per ISO 7637-2 Pulse 5a, maintaining system uptime without sacrificial fuse activation. |
| Telecom Power Supplies | Consumer Sensor Hubs |
|
Use Scenario: Input-stage protection of AC/DC adapters and PoE injectors subjected to lightning-induced surges on primary-side rectifier outputs. IC Role / Device Role / Timing Role: Secondary-side TVS on +48 V or +24 V distribution rails feeding baseband processors and PHYs. Use Value: Clamps 600 W transients within 1 ns, preserving integrity of isolated feedback paths and avoiding brownout resets. |
Use Scenario: ESD and EFT protection on analog front-end lines of environmental sensors (temperature, humidity, motion) in smart home hubs. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF typical at 0 V) unidirectional clamp on I²C/SPI signal pairs and ADC reference inputs. Use Value: Maintains signal fidelity with <1.0 µA leakage at 30 V, enabling battery-operated designs with multi-year shelf life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30A-E3/5B | Commercial-grade (non-AEC-Q101), identical electrical specs and SMB package. | Lacks automotive qualification; not approved for under-hood or safety-critical vehicle subsystems. | Select when cost-sensitive industrial or consumer designs do not require automotive reliability validation. |
| SAC30-13-F | Same VWM (30 V) and PPPM (600 W), but in SMC (DO-214AB) package with higher RθJA (75 °C/W). | Requires larger PCB footprint and different pad layout; better thermal performance only with added copper area. | Choose when board space allows larger package and higher thermal mass is needed for repetitive surge duty cycles. |
Compared with SMBJ30A-E3/5B, the SMBJ30HE3/5B adds AEC-Q101 qualification for automotive use without altering clamping behavior; versus SAC30-13-F, it offers smaller SMB footprint and standardized MSL-1 reflow compatibility at the expense of slightly higher thermal resistance.
Availability
SMBJ30HE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and telecom power supplies requiring stable component supply with AEC-Q101 traceability and UL recognition.
Supply support for SMBJ30HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where surge immunity and long-term stability are mission-critical.
FAQ
What is the clamping voltage of SMBJ30HE3/5B at its rated peak pulse current?
The SMBJ30HE3/5B has a maximum clamping voltage (VC) of 48.4 V at 12.4 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ30HE3/5B maintains this clamping performance across its full operating temperature range (–55 to +150 °C) when mounted per recommended pad layout.
Is SMBJ30HE3/5B suitable for automotive applications?
Yes, SMBJ30HE3/5B is AEC-Q101 qualified, making it suitable for automotive applications including body control modules, infotainment power rails, and sensor interfaces. Its qualification covers stress tests such as temperature cycling, high-temperature reverse bias, and ESD per ISO 10605. The SMBJ30HE3/5B also carries UL 497B recognition (file E136766), supporting compliance in automotive subsystems requiring certified surge protection.
What is the difference between SMBJ30HE3/5B and SMBJ30A-E3/5B?
The SMBJ30HE3/5B and SMBJ30A-E3/5B share identical electrical characteristics (VWM = 30 V, VBR = 33.3–36.8 V, VC = 48.4 V) and SMB (DO-214AA) package, but differ in qualification: SMBJ30HE3/5B is AEC-Q101 qualified and intended for automotive use, while SMBJ30A-E3/5B is commercial-grade only. Both are RoHS-compliant and share the same "HE3" suffix indicating AEC-Q101 capability in the former and "E3" suffix denoting RoHS compliance in the latter.
What is the maximum reverse leakage current for SMBJ30HE3/5B at rated standoff voltage?
The SMBJ30HE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 µA at its rated standoff voltage (VWM = 30 V) and ambient temperature of 25 °C. This low leakage ensures minimal power loss in always-on circuits and preserves battery life in portable or energy-harvesting sensor nodes. Leakage remains within specification up to +125 °C, increasing predictably per temperature coefficient data in the Vishay datasheet.
Does SMBJ30HE3/5B have polarity marking, and how is it identified?
Yes, SMBJ30HE3/5B is unidirectional and features a cathode band marking on the device body - a visible stripe near one end of the SMB (DO-214AA) package. The banded end corresponds to the cathode terminal, which must be connected toward the higher-potential side of the protected line (e.g., VCC or signal line). The anode is the unmarked end and connects to ground or lower-potential return. This polarity is essential for correct clamping operation and must be observed during PCB layout.
SMBJ30HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 53.5V
- Current - Peak Pulse (10/1000µs):
- 11.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ30HE3/5B FAQ
1.How can I place an order for SMBJ30HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ30HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ30HE3/5B reliable?
The price and inventory of SMBJ30HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ30HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ30HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ30HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ30HE3/5B?
SMBJ30HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ30HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ30HE3/5B?
For technical support, including SMBJ30HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ30HE3/5B requirements.
6.How does Aetrix verify that SMBJ30HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ30HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ30HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ30HE3/5B?
All SMBJ30HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ30HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ30HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ30HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ30HE3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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