Vishay General Semiconductor - Diodes Division SMBJ33AHE3_B/I
- Part No.:
- SMBJ33AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ33AHE3_B/I.pdf
- Description:
- 600W,33V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ33AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed to protect sensitive electronics against ESD, lightning-induced surges, and inductive switching transients. It features a 33 V stand-off voltage (VWM), 36.7–40.6 V breakdown voltage (VBR) at 1 mA, 53.3 V clamping voltage (VC) at 11.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used in power supply input stages and I/O line protection for industrial sensors.
For engineers reviewing the SMBJ33AHE3_B/I datasheet, SMBJ33AHE3_B/I pinout, SMBJ33AHE3_B/I application, or SMBJ33AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT assembly on standard PCB pad layouts.
Technical Context
This TVS diode operates as a voltage-clamping device that remains high-impedance below VWM = 33 V and rapidly transitions to low-impedance conduction above VBR (min 36.7 V) to divert transient energy away from downstream circuitry. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns).
The SMBJ33AHE3_B/I is rated for 600 W peak pulse power (10/1000 µs), 100 A non-repetitive forward surge current (8.3 ms half-sine), and exhibits a maximum reverse leakage of 1.0 µA at VWM, enabling reliable protection in automotive-grade and industrial environments where thermal derating and long-term reliability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working range. |
| VBR (min/max) | 36.7 V / 40.6 V at 1 mA - Ensures consistent breakdown onset across production lots; tight tolerance supports predictable protection threshold. |
| VC @ IPPM | 53.3 V at 11.3 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected IC or MOSFET. |
| PPPM | 600 W - Peak transient power handling capability; enables robust protection against IEC 61000-4-5 Level 4 surges. |
| IFSM | 100 A - Single half-sine surge rating (8.3 ms); validates suitability for motor drive and relay coil suppression. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and high-ambient industrial settings. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 0.205" × 0.130" footprint; compatible with J-STD-020 reflow profiles up to 260 °C peak. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode indicated by band marking on one end; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-impedance return path; forms current sink during transient clamping event. |
| Cathode | High-side connection point | Connected to protected line (e.g., 33 V rail or signal trace); blocks reverse current until VBR exceeded. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics; meets stress test requirements for temperature cycling, HTRB, and ESD. |
| 600 W peak pulse power (10/1000 µs) | Provides margin against high-energy transients per ISO 7637-2 Pulse 5a/b and IEC 61000-4-5 Combination Wave (1.2/50 µs + 8/20 µs). |
| Glass passivated junction | Ensures stable VBR and low leakage over lifetime; eliminates risk of moisture-induced parameter drift in humid environments. |
| MSL Level 1 (260 °C peak) | Enables single-reflow assembly without preconditioning; eliminates moisture sensitivity concerns during manufacturing. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage exposure to protected devices; improves system-level immunity without requiring oversized voltage margins. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 33 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp positive-going surges above 33 V. Use Value: Limits peak voltage to ≤53.3 V during 10/1000 µs surges, preventing damage to 36 V-rated regulators and microcontrollers. |
Use Scenario: Shielding analog output lines of pressure/temperature sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: TVS connected anode-to-ground, cathode-to-signal line to suppress fast-rising transients while maintaining DC integrity. Use Value: Sub-1 ns response time and <1 µA leakage at 33 V ensure no signal distortion or offset error in precision measurement circuits. |
| DC-DC Converter Input Stage | MOSFET Gate Driver Protection |
|
Use Scenario: Safeguarding buck converter inputs against inductive kickback from upstream relays or solenoids. IC Role / Device Role / Timing Role: Placed across input capacitor terminals to absorb repetitive 600 W pulses without degradation. Use Value: 100 A IFSM rating and 150 °C TJ max enable sustained operation in high-duty-cycle industrial power supplies. |
Use Scenario: Preventing gate oxide rupture in high-side N-channel MOSFETs driven by 33 V logic-level signals. IC Role / Device Role / Timing Role: Connected cathode-to-gate, anode-to-source to clamp negative-going transients induced by Miller coupling. Use Value: Tight VBR tolerance (36.7–40.6 V) ensures clamping initiates before gate-source breakdown (typically ±20 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33AHM3_B/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected when halogen-free compliance is mandated by OEM environmental policy. | Choose SMBJ33AHM3_B/I if halogen-free materials are required; otherwise SMBJ33AHE3_B/I offers same performance at standard cost. |
| SMCJ33AHE3_A/H | Larger SMC (DO-214AB) package with higher 1500 W PPPM, same VWM/VBR/VC ratings. | Used where higher surge margin or improved thermal dissipation is needed; requires larger PCB footprint. | Select SMCJ33AHE3_A/H only when 600 W is insufficient; SMBJ33AHE3_B/I remains optimal for space-constrained designs with standard surge requirements. |
Compared with SMBJ33AHM3_B/I, the SMBJ33AHE3_B/I differs only in halogen content, not performance; versus SMCJ33AHE3_A/H, it trades lower surge capacity for 40% smaller board area and identical clamping behavior - making SMBJ33AHE3_B/I ideal for compact, automotive-qualified layouts.
Availability
SMBJ33AHE3_B/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and DC-DC converter input protection requiring stable component supply, AEC-Q101 qualification, and RoHS compliance.
Supply support for SMBJ33AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, automotive qualification, and high-volume manufacturability.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for robust transient suppression in harsh environments - targeting automotive, industrial automation, and telecom infrastructure applications where failure is not an option.
FAQ
What is the maximum clamping voltage of the SMBJ33AHE3_B/I under a 10/1000 µs surge?
The SMBJ33AHE3_B/I has a maximum clamping voltage (VC) of 53.3 V at 11.3 A peak pulse current (IPPM) under a 10/1000 µs waveform. This value is measured per JEDEC standards and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The SMBJ33AHE3_B/I maintains this clamping performance across its full operating temperature range and lifetime, ensuring consistent protection behavior in automotive and industrial deployments.
Is the SMBJ33AHE3_B/I qualified for automotive applications?
Yes, the SMBJ33AHE3_B/I is AEC-Q101 qualified, meaning it has passed rigorous stress testing including temperature cycling, high-temperature reverse bias (HTRB), and ESD per JESD22-A114. This qualification confirms its suitability for under-hood and cabin-mounted automotive systems such as body control modules, ADAS sensor interfaces, and powertrain subsystems. The "HE3" suffix explicitly denotes AEC-Q101 compliance in Vishay's ordering nomenclature.
What does the "B/I" suffix mean in SMBJ33AHE3_B/I?
The "B/I" suffix in SMBJ33AHE3_B/I indicates packaging configuration: "B" refers to the base revision level (per Vishay's internal revision coding), and "I" specifies 13-inch diameter plastic tape-and-reel delivery containing 3200 units. This format supports high-speed pick-and-place assembly and is compatible with industry-standard SMT equipment. The "HE3" portion confirms RoHS compliance and AEC-Q101 qualification, independent of reel size.
How does the SMBJ33AHE3_B/I compare to bidirectional TVS diodes like SMBJ33CA?
The SMBJ33AHE3_B/I is unidirectional and intended for DC-biased lines where only positive-going transients require suppression; it cannot handle symmetrical AC surges. In contrast, SMBJ33CA provides bidirectional clamping for AC-coupled or floating signal paths. The SMBJ33AHE3_B/I offers lower leakage (<1 µA at 33 V) and tighter VBR tolerance than its bidirectional counterpart, making it preferable for precision power rail protection where reverse conduction must be avoided.
What is the thermal resistance of the SMBJ33AHE3_B/I, and how does it affect layout design?
The SMBJ33AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads per terminal. This value guides PCB layout: increasing copper area or adding thermal vias reduces effective RθJA, allowing higher average power dissipation. For continuous operation near 5.0 W, designers should verify junction temperature using ambient conditions and actual power duty cycle - the SMBJ33AHE3_B/I's 150 °C TJ max sets the absolute thermal ceiling.
SMBJ33AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 11.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ33AHE3_B/I FAQ
1.How can I place an order for SMBJ33AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ33AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ33AHE3_B/I reliable?
The price and inventory of SMBJ33AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ33AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ33AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ33AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ33AHE3_B/I?
SMBJ33AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ33AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ33AHE3_B/I?
For technical support, including SMBJ33AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ33AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ33AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ33AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ33AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ33AHE3_B/I?
All SMBJ33AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ33AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ33AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ33AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ33AHE3_B/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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