Vishay General Semiconductor - Diodes Division SMBJ33CD-M3/I
- Part No.:
- SMBJ33CD-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ33CD-M3/I.pdf
- Description:
- TVS DIODE 33VWM 52.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:293
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Product details
Overview
SMBJ33CD-M3/I from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal and power lines. It features a 33 V stand-off voltage (VWM), 37.3–40.0 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 μs), and clamps to ≤52.5 V at 11.5 A surge current - deployed in industrial sensor interfaces and telecom line protection.
For engineers reviewing the SMBJ33CD-M3/I datasheet, SMBJ33CD-M3/I pinout, SMBJ33CD-M3/I application, or SMBJ33CD-M3/I equivalent, this page delivers verified electrical specs, bidirectional clamping behavior, thermal derating curves, M3 halogen-free RoHS-compliant construction, and direct alternatives with validated parameter alignment.
Technical Context
This bidirectional TVS operates symmetrically across both polarities, with identical VBR min/max (37.3–40.0 V), VWM (33 V), and VC (≤52.5 V at IPPM) in either direction. Its low incremental surge resistance and fast response time enable effective suppression of ESD, lightning-induced surges, and inductive switching transients without polarity sensitivity.
Thermal performance is defined by RθJA = 125 °C/W (on minimum pad) and RθJM = 20 °C/W, supporting operation from –55 °C to +150 °C junction temperature. Power dissipation is rated at 1.0 W (TA = 25 °C) and derates linearly above 25 °C per Fig. 5.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous reverse operating voltage before significant leakage; defines safe working margin below clamping threshold |
| VBR (min/max) | 37.3 V / 40.0 V at IT = 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | ≤52.5 V at 11.5 A - clamping voltage under 10/1000 μs surge; determines protected circuit's maximum stress level |
| PPPM | 600 W - peak pulse power handling capability with 10/1000 μs waveform; validates robustness against IEC 61000-4-5 surges |
| ID @ VWM | ≤0.5 μA - ultra-low reverse leakage preserves signal integrity and minimizes standby power loss in high-impedance circuits |
| TJ max | +150 °C - enables reliable operation in under-hood automotive, industrial motor drives, and outdoor telecom enclosures |
| Package | SMB (DO-214AA) - surface-mount outline with 5.59 mm × 4.06 mm footprint; compatible with automated pick-and-place and reflow |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case meeting UL 94 V-0; matte tin-plated terminals, J-STD-002 solderable; M3 suffix denotes halogen-free, RoHS-compliant, industrial-grade construction with JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (Bidirectional) | Non-polarized terminals | No cathode band marking; symmetrical conduction in both directions - eliminates orientation errors during placement |
| Cathode Band (N/A) | Not applicable | Bidirectional configuration removes polarity dependency; simplifies PCB layout and BOM management vs. unidirectional variants |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Ensures consistent clamping onset across batches - critical for systems requiring precise overvoltage thresholds |
| 600 W peak pulse power (10/1000 μs) | Withstands IEC 61000-4-5 Level 4 surge events (4 kV line-to-earth) without degradation when properly mounted |
| Low ID ≤ 0.5 μA at VWM | Minimizes loading on high-impedance sensor outputs and analog front-ends, preserving accuracy and dynamic range |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow profiles without moisture-related popcorning; no pre-bake required |
| Halogen-free & RoHS-compliant (M3) | Fulfills environmental compliance for EU, China RoHS, and JEITA standards; suitable for global industrial deployments |
Applications
| Industrial Sensor Interface | Telecom Line Protection |
|---|---|
|
Use Scenario: Protecting RS-485 transceivers and analog sensor outputs (e.g., 4–20 mA loops) from ESD and inductive kickback in factory automation PLCs. IC Role / Device Role / Timing Role: Bidirectional clamping element placed directly at connector entry point to shunt transients before reaching IC pins. Use Value: Prevents latch-up or permanent damage to transceivers operating at 3.3 V or 5 V logic levels while maintaining signal fidelity due to sub-μA leakage. |
Use Scenario: Shielding Ethernet PHYs and DSL line drivers from lightning-induced surges on outdoor telecom drop cables. IC Role / Device Role / Timing Role: Primary surge suppression device on differential pair inputs, coordinated with common-mode chokes and gas discharge tubes. Use Value: Limits peak differential voltage to ≤52.5 V during 10/1000 μs surges, keeping PHYs within absolute maximum ratings without adding propagation delay. |
| Automotive Body Control Module | Consumer Appliance Motor Drive |
|
Use Scenario: Safeguarding LIN bus transceivers and microcontroller GPIOs connected to door lock actuators and window lift switches. IC Role / Device Role / Timing Role: Localized TVS on each switched load line to absorb inductive energy from brushed DC motors and solenoids. Use Value: Enables compliance with ISO 7637-2 Pulse 1/2a/3a test requirements while operating reliably at –40 °C to +125 °C ambient. |
Use Scenario: Clamping voltage spikes generated by universal motor commutation and relay coil de-energization in washing machines and HVAC blowers. IC Role / Device Role / Timing Role: Secondary protection stage downstream of fuse and varistor, providing precise low-leakage clamping near MCU inputs. Use Value: Reduces false resets and ADC offset drift caused by microsurges, extending product lifetime in high-humidity environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33CA-E3/52 (Vishay) | Same VWM/VBR/VC specs; differs in packaging (tape-and-reel quantity 2500 vs. 3200) and M3 vs. "E3" halogen-free compliance grade | Identical electrical performance; E3 variant used in legacy automotive programs with prior qualification records | Select SMBJ33CD-M3/I for new designs requiring latest M3 industrial-grade construction and 13″ reel logistics |
| 1.5SMC33CA (ON Semiconductor) | Same SMB package and bidirectional 33 V rating; slightly wider VBR tolerance (±5 % vs. ±3.5 %); VC = 53.3 V at 11.3 A | Marginally higher clamping voltage reduces protected circuit headroom; acceptable where 0.8 V extra stress is tolerable | Choose only if dual-sourcing is mandated and tighter VBR tolerance is not required for system-level surge margin |
Compared with SMBJ33CA-E3/52, the SMBJ33CD-M3/I offers improved VBR consistency and updated environmental compliance; versus 1.5SMC33CA, it delivers tighter tolerance and lower clamping, making it preferable for precision-sensitive industrial interfaces.
Availability
SMBJ33CD-M3/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, telecom line protection, and automotive body control modules requiring stable component supply, long-term lifecycle support, and M3-grade environmental compliance.
Supply support for SMBJ33CD-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and ruggedized packaging.
The SMBJ series was engineered specifically for high-energy transient suppression in harsh environments - targeting industrial automation, telecom infrastructure, and automotive subsystems where failure resilience is non-negotiable.
FAQ
What is the clamping voltage of SMBJ33CD-M3/I and how is it measured?
The SMBJ33CD-M3/I has a maximum clamping voltage (VC) of 52.5 V, measured at its peak pulse current (IPPM) of 11.5 A using a standardized 10/1000 μs double-exponential surge waveform. This value reflects the actual voltage seen by downstream circuitry during worst-case transient events and is guaranteed across the full operating temperature range.
Is SMBJ33CD-M3/I unidirectional or bidirectional, and how does that affect PCB layout?
SMBJ33CD-M3/I is a bidirectional TVS diode, meaning it provides symmetrical clamping in both forward and reverse directions. There is no cathode band marking on the package, eliminating polarity concerns during placement - this simplifies PCB layout, reduces assembly errors, and avoids the need for orientation verification in automated SMT lines.
What does the "M3" suffix mean in SMBJ33CD-M3/I?
The "M3" suffix in SMBJ33CD-M3/I indicates Vishay's industrial-grade construction: halogen-free molding compound, RoHS compliance, and qualification to JESD 201 Class 2 for tin whisker resistance. It also specifies compatibility with lead-free reflow (MSL Level 1, 260 °C peak), distinguishing it from legacy "-H" or "-E3" variants.
Can SMBJ33CD-M3/I replace SMBJ33A-M3/I in an existing design?
No - SMBJ33CD-M3/I is bidirectional, while SMBJ33A-M3/I is unidirectional. Substituting them requires verifying circuit polarity, checking for reverse-bias stress on downstream components, and confirming that clamping behavior remains symmetrical where needed. Direct replacement is not recommended without schematic and layout review.
What is the thermal resistance of SMBJ33CD-M3/I and how does it impact power handling?
SMBJ33CD-M3/I has a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended pad layout. This means a 1.0 W steady-state power dissipation raises junction temperature by 125 °C above ambient - so at TA = 25 °C, TJ reaches 150 °C, matching its absolute maximum rating. Derating is essential for sustained operation.
SMBJ33CD-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 37.3V
- Voltage - Clamping (Max) @ Ipp:
- 52.5V
- Current - Peak Pulse (10/1000µs):
- 11.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ33CD-M3/I FAQ
1.How can I place an order for SMBJ33CD-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ33CD-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ33CD-M3/I reliable?
The price and inventory of SMBJ33CD-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ33CD-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ33CD-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ33CD-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ33CD-M3/I?
SMBJ33CD-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ33CD-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ33CD-M3/I?
For technical support, including SMBJ33CD-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ33CD-M3/I requirements.
6.How does Aetrix verify that SMBJ33CD-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ33CD-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ33CD-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ33CD-M3/I?
All SMBJ33CD-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ33CD-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ33CD-M3/I part is unused and in its original packaging.
Return procedure for SMBJ33CD-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ33CD-M3/I Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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