My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ33C-E3/5B
;;2.jpg)
- Part No.:
- SMBJ33C-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ33C-E3/5B.pdf
- Description:
- TVS DIODE 33VWM 59VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:6,763
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ33C-E3/5B from Vishay General Semiconductor is a bidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection on signal and power lines. It features a 33 V stand-off voltage (VWM), 53.3 V maximum clamping voltage (VC) at 11.3 A peak pulse current (IPPM), and 600 W peak pulse power capability with 10/1000 µs waveform - deployed in industrial sensor interfaces and telecom line protection.
For engineers reviewing the SMBJ33C-E3/5B datasheet, SMBJ33C-E3/5B pinout, SMBJ33C-E3/5B application, or SMBJ33C-E3/5B equivalent, key selection criteria include bidirectional clamping symmetry, low leakage (<1.0 µA at VWM), MSL Level 1 moisture sensitivity, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This device operates as a voltage-clamped shunt protector: under transient overvoltage exceeding its breakdown threshold (VBR = 36.7–40.6 V), it avalanches rapidly to divert surge current away from downstream circuitry. Its bidirectional structure enables symmetric clamping in both polarities without external polarity management.
It delivers 600 W peak pulse power handling per 10/1000 µs waveform with <1 ns response time, low incremental surge resistance, and thermal resistance of 100 °C/W (junction-to-ambient) when mounted on standard 0.2" × 0.2" copper pads. Junction temperature range spans –55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - Maximum continuous reverse working voltage before clamping initiates; defines safe operating margin for 24 V nominal systems. |
| VBR min/max | 36.7 V / 40.6 V at IT = 1.0 mA - Confirmed breakdown range ensures reliable triggering across process variation and temperature. |
| VC @ IPPM | 53.3 V at 11.3 A - Clamping voltage limits stress on protected ICs during 10/1000 µs transients (e.g., ISO 7637-2 Pulse 1/2a). |
| IPPM | 11.3 A - Peak surge current capacity determines survivability against defined lightning or EFT events. |
| PPPM | 600 W - Peak pulse power rating validated per JEDEC JESD22-A115A; supports repetitive 0.01% duty cycle surges. |
| ID @ VWM | <1.0 µA - Ultra-low reverse leakage preserves signal integrity and battery life in always-on sensor nodes. |
| Package | SMB (DO-214AA) - Surface-mount outline with 5.59 mm max length, 4.06 mm max width, and 2.20 mm max height; compatible with IPC-7351B footprint. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; no polarity marking for bidirectional configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (positive half-cycle) | Connects to line under protection; forms one side of symmetrical avalanche path. |
| Cathode | Transient current entry (negative half-cycle) | Connects to same line; completes bidirectional conduction path with Anode - no DC polarity assignment. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating lines (e.g., RS-485, CAN, Ethernet PHY) without polarity concerns. |
| 600 W peak pulse power | Meets IEC 61000-4-5 Level 3 (1 kV surge) and ISO 16750-2 automotive load dump immunity when properly laid out. |
| MSL Level 1 rating | Allows unlimited floor life and reflow at peak 260 °C - eliminates baking requirements for high-volume SMT assembly. |
| Glass passivated junction | Ensures stable VBR and low leakage over 150 °C junction temperature and >1000-hour HTOL stress. |
| RoHS-compliant, halogen-free option | E3 suffix denotes commercial-grade RoHS compliance; M3 suffix adds halogen-free certification per IEC 61249-2-21. |
Applications
| Industrial Sensor Interface | Automotive Body Control Module |
|---|---|
|
Use Scenario: Protecting analog output lines (4–20 mA) and digital I/O (CAN/LIN) in factory automation sensors exposed to relay switching transients. IC Role / Device Role / Timing Role: Shunt TVS placed directly at connector entry point to clamp induced spikes before reaching ADC or microcontroller GPIO. Use Value: Limits transient-induced latch-up risk and extends field lifetime by maintaining <1.0 µA leakage at 33 V system rail. |
Use Scenario: Safeguarding LIN bus transceivers and door module microcontrollers against battery line transients (load dump, jump start). IC Role / Device Role / Timing Role: Bidirectional clamping element on LIN data line and VCC input, referenced to chassis ground. Use Value: Achieves 53.3 V clamping at 11.3 A while meeting AEC-Q101 qualification when ordered as HE3/HM3 variant. |
| Telecom Line Card Protection | Consumer USB Port ESD Suppression |
|
Use Scenario: Front-end surge protection for Ethernet PHYs and PoE injectors in enterprise switches subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Primary coarse protection stage upstream of polymer PTC and secondary TVS array. Use Value: Handles 600 W 10/1000 µs surges with <1 ns response, reducing downstream component stress by >40% versus unclamped transients. |
Use Scenario: Secondary-level overvoltage suppression on USB 2.0 D+/D− lines behind integrated ESD diodes in portable devices. IC Role / Device Role / Timing Role: Standby clamping device activated only during high-energy events beyond internal ESD cell capability. Use Value: Adds 33 V standoff margin and 53.3 V clamping ceiling without degrading 480 Mbps signal integrity due to low junction capacitance (~200 pF). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33CA-E3/5B | Identical electrical specs and SMB package; "CA" suffix explicitly denotes bidirectional version (same as "C" in SMBJ33C). | No functional difference - "CA" and "C" are manufacturer-equivalent bidirectional designations per Vishay ordering guide. | Select SMBJ33CA-E3/5B if BOM requires explicit CA suffix; otherwise SMBJ33C-E3/5B is functionally identical. |
| SMCJ33C-E3/57T | Same VWM/VC but in larger SMC (DO-214AB) package; 1500 W PPPM, higher IPPM (33.4 A), RθJA = 35 °C/W. | Used where higher surge endurance or lower thermal resistance is required - e.g., outdoor telecom enclosures with limited airflow. | Choose SMCJ33C-E3/57T only when 600 W is insufficient; SMBJ33C-E3/5B remains optimal for space-constrained PCBs with ≤11.3 A threat profile. |
Compared with SMBJ33CA-E3/5B, SMBJ33C-E3/5B offers identical protection performance in the same SMB footprint; versus SMCJ33C-E3/57T, it trades surge capacity for 40% smaller board area and compatibility with fine-pitch automated placement.
Availability
SMBJ33C-E3/5B is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body control modules, telecom line cards, and consumer USB port protection requiring stable component supply and RoHS-compliant sourcing.
Supply support for SMBJ33C-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-reliability transient suppression in harsh environments including automotive, industrial, and telecom infrastructure.
FAQ
What does the "C" suffix in SMBJ33C-E3/5B indicate?
The "C" suffix in SMBJ33C-E3/5B designates a bidirectional configuration, meaning the device provides symmetrical transient voltage clamping for both positive and negative polarity surges. This eliminates the need for polarity-aware layout and makes SMBJ33C-E3/5B ideal for AC-coupled or floating signal lines such as RS-485, CAN, or Ethernet PHY interfaces. It is functionally equivalent to the "CA" suffix variant.
What is the maximum clamping voltage of SMBJ33C-E3/5B under surge conditions?
The SMBJ33C-E3/5B has a maximum clamping voltage (VC) of 53.3 V at 11.3 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is guaranteed across temperature and process variation per Vishay Document 88392, ensuring protected downstream ICs experience no more than 53.3 V during standardized surge events.
Is SMBJ33C-E3/5B suitable for automotive applications?
SMBJ33C-E3/5B itself is commercial-grade (E3 suffix), but Vishay offers AEC-Q101 qualified variants under HE3/HM3 suffixes (e.g., SMBJ33CHE3_B/I). For non-automotive use, SMBJ33C-E3/5B meets industrial and telecom surge standards; for automotive deployment, specify the HE3 or HM3 version to ensure qualification per AEC-Q101 stress testing.
How does SMBJ33C-E3/5B compare to unidirectional SMBJ33A-E3/5B?
SMBJ33C-E3/5B provides bidirectional clamping with identical VWM (33 V) and VC (53.3 V) as SMBJ33A-E3/5B, but differs in polarity behavior: SMBJ33A-E3/5B conducts only during reverse-biased transients and requires correct cathode orientation, whereas SMBJ33C-E3/5B protects both polarities without orientation dependency - simplifying layout and reducing BOM count.
What PCB layout guidance applies to SMBJ33C-E3/5B for optimal surge performance?
For optimal surge performance, mount SMBJ33C-E3/5B with minimum trace length between the protected line and device terminals, using 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal as specified in Vishay Document 88392. Avoid vias or narrow traces in the surge current path; connect the device directly to chassis or system ground plane to minimize inductance and preserve 53.3 V clamping integrity.
SMBJ33C-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 59V
- Current - Peak Pulse (10/1000µs):
- 10.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ33C-E3/5B FAQ
1.How can I place an order for SMBJ33C-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ33C-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ33C-E3/5B reliable?
The price and inventory of SMBJ33C-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ33C-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ33C-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ33C-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ33C-E3/5B?
SMBJ33C-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ33C-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ33C-E3/5B?
For technical support, including SMBJ33C-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ33C-E3/5B requirements.
6.How does Aetrix verify that SMBJ33C-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ33C-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ33C-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ33C-E3/5B?
All SMBJ33C-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ33C-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ33C-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ33C-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ33C-E3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
