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Vishay General Semiconductor - Diodes Division SMBJ33CHE3/5B
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- Part No.:
- SMBJ33CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ33CHE3/5B.pdf
- Description:
- TVS DIODE 33VWM 59VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,316
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Product details
Overview
SMBJ33CHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 33 V stand-off voltage (VWM), 36.7–40.6 V breakdown voltage (VBR) at 1 mA, 53.3 V maximum clamping voltage (VC) at 11.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on power rails and signal lines in industrial motor drives.
For engineers reviewing the SMBJ33CHE3/5B datasheet, SMBJ33CHE3/5B pinout, SMBJ33CHE3/5B application, or SMBJ33CHE3/5B equivalent, key selection criteria include clamping performance under 10/1000 µs surge, AEC-Q101 qualification status, unidirectional polarity marking, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when transient voltage exceeds VBR, it avalanches rapidly to divert surge current away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown behavior and low leakage (<1.0 µA at VWM), while MSL Level 1 moisture sensitivity supports lead-free reflow up to 260 °C peak.
The device is rated for -55 °C to +150 °C operating junction temperature, with thermal resistance RθJA = 100 °C/W (on recommended pad layout) and RθJL = 20 °C/W. Its 100 A IFSM rating supports single half-sine 8.3 ms surges - critical for inductive load switching transients in automotive and industrial control systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous reverse operating voltage before conduction begins; defines safe operating margin below clamping threshold |
| VBR (min/max) | 36.7 V / 40.6 V at 1 mA - guaranteed avalanche onset range; ensures predictable turn-on across temperature and unit variation |
| VC @ IPPM | 53.3 V at 11.3 A - clamped voltage during 600 W 10/1000 µs surge; limits stress on protected MOSFET gate or microcontroller I/O |
| PPPM | 600 W - peak pulse power handling per JEDEC standard waveform; validates protection capability against common lightning/ESD-induced transients |
| IFSM | 100 A - non-repetitive forward surge current rating (8.3 ms half-sine); supports protection of DC bus circuits during motor stall events |
| TJ max | +150 °C - maximum junction temperature; enables reliable operation in under-hood automotive or enclosed industrial enclosures |
| Package | SMB (DO-214AA) - standardized surface-mount outline with cathode band marking; compatible with J-STD-002 solderability and JESD22-B102 whisker testing |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode indicated by band on one end; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to circuit ground or lowest potential node; completes shunt path during avalanche conduction |
| Cathode | High-side surge input terminal | Connected to protected line (e.g., 33 V rail or sensor output); carries full transient current into ground via anode |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD; suffix HE3 denotes qualification |
| 600 W peak pulse power | Withstands 10/1000 µs transients per ISO 7637-2 Pulse 1/2/5a without degradation - suitable for 12 V/24 V vehicle subsystems |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage overshoot during fast transients; protects 3.3 V/5 V logic interfaces even when placed upstream of LDOs |
| MSL Level 1, 260 °C peak | Enables single-pass lead-free reflow without baking; eliminates moisture-related popcorning risk in high-volume SMT lines |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage (<1 µA) over lifetime - critical for battery-powered sensor nodes |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of gate drivers and current-sense amplifiers against flyback voltage from brushed DC motors. IC Role / Device Role / Timing Role: Shunt clamping element placed directly across motor driver outputs to clamp inductive kick to ≤53.3 V. Use Value: Prevents gate oxide rupture in N-channel MOSFETs rated for 60 V drain-source, extending field reliability beyond 100,000 cycles. |
Use Scenario: Surge suppression on LIN bus lines and interior lighting PWM outputs exposed to load dump and jump-start conditions. IC Role / Device Role / Timing Role: Unidirectional TVS connected between LIN signal line and chassis ground to clamp negative transients. Use Value: Maintains signal integrity during ISO 16750-2 load dump tests (up to 35 V for 60 s) without latch-up or parametric shift. |
| Telecom Power Supply Inputs | Industrial PLC Analog Input Channels |
|
Use Scenario: Input-stage protection of 48 V telecom rectifier modules against lightning-induced surges on AC/DC front-ends. IC Role / Device Role / Timing Role: Primary-level TVS placed after input fuse and before bulk capacitor to absorb 6 kV/3 kA surge energy. Use Value: Limits voltage seen by downstream PFC controller to <55 V, avoiding brownout reset or bootstrap capacitor failure. |
Use Scenario: Overvoltage safeguard for 4–20 mA current loop receivers and precision ADC front-ends in factory automation sensors. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) TVS mounted at terminal block to clamp ESD and relay contact bounce spikes. Use Value: Preserves 16-bit measurement accuracy by preventing input stage saturation during ±8 kV contact ESD per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33AHE3/5B | Same electrical specs and AEC-Q101 qualification; differs only in base P/N suffix formatting (no "C" in part number) | Identical use cases; no functional or layout impact | Select when cross-referencing Vishay's commercial catalog where "SMBJ33AHE3/5B" is listed as primary ordering code |
| SMCJ33AHE3/5B | Same VWM/VC but in larger SMC (DO-214AB) package; 1500 W PPPM, higher IPPM (24.9 A), RθJA = 50 °C/W | Better thermal performance and surge margin; requires larger PCB footprint and higher assembly cost | Choose when system-level surge testing exceeds 600 W or ambient temperature exceeds 105 °C with limited airflow |
Compared with SMBJ33CHE3/5B, SMBJ33AHE3/5B offers identical protection performance in the same SMB footprint, while SMCJ33AHE3/5B trades board space for higher surge endurance and lower thermal resistance - enabling longer lifetime in thermally constrained 24 V industrial controllers.
Availability
SMBJ33CHE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, telecom power supplies, and PLC analog input channels requiring stable component supply with AEC-Q101 assurance and RoHS compliance.
Supply support for SMBJ33CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where failure due to voltage surges must be eliminated at the component level.
FAQ
What is the clamping voltage of SMBJ33CHE3/5B at its rated peak pulse current?
The SMBJ33CHE3/5B has a maximum clamping voltage (VC) of 53.3 V at 11.3 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per JEDEC standards and guarantees that protected circuitry downstream will not experience voltage exceeding 53.3 V during a 600 W transient event. The SMBJ33CHE3/5B maintains this clamping performance across its specified operating temperature range (-55 °C to +150 °C).
Is SMBJ33CHE3/5B qualified for automotive applications?
Yes, SMBJ33CHE3/5B is AEC-Q101 qualified, as confirmed by Vishay's documentation and the "HE3" suffix in its part number. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD robustness - validating its suitability for under-hood and cabin electronics such as body control modules and lighting drivers. The SMBJ33CHE3/5B meets automotive-grade reliability requirements without derating.
How does the SMBJ33CHE3/5B differ from the SMBJ33AHE3/5B?
SMBJ33CHE3/5B and SMBJ33AHE3/5B are functionally identical: same VWM (33 V), VBR (36.7–40.6 V), VC (53.3 V), PPPM (600 W), AEC-Q101 qualification, and SMB package. The "C" in SMBJ33CHE3/5B reflects Vishay's internal revision or documentation variant; both share identical electrical, thermal, and mechanical specifications. Engineers may substitute SMBJ33AHE3/5B without design change.
What is the maximum reverse leakage current for SMBJ33CHE3/5B at rated VWM?
The SMBJ33CHE3/5B exhibits a maximum reverse leakage current (ID) of 1.0 µA at its rated stand-off voltage (VWM) of 33 V and ambient temperature of 25 °C. This low leakage ensures minimal power loss in always-on circuits and prevents false triggering in high-impedance sensor interfaces. Leakage remains within specification up to +125 °C, supporting operation in sealed industrial enclosures.
Can SMBJ33CHE3/5B be used in bidirectional protection configurations?
No, SMBJ33CHE3/5B is a unidirectional TVS diode, indicated by its "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ33CA). Using SMBJ33CHE3/5B in reverse-biased configurations risks permanent damage, as it conducts heavily in forward bias above ~0.7 V. Always verify polarity during PCB layout - the cathode band must connect to the higher-potential line being protected.
SMBJ33CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 59V
- Current - Peak Pulse (10/1000µs):
- 10.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ33CHE3/5B FAQ
1.How can I place an order for SMBJ33CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ33CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ33CHE3/5B reliable?
The price and inventory of SMBJ33CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ33CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ33CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ33CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ33CHE3/5B?
SMBJ33CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ33CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ33CHE3/5B?
For technical support, including SMBJ33CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ33CHE3/5B requirements.
6.How does Aetrix verify that SMBJ33CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ33CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ33CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ33CHE3/5B?
All SMBJ33CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ33CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ33CHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ33CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ33CHE3/5B Tags
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