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Vishay General Semiconductor - Diodes Division SMBJ33D-M3/I
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- Part No.:
- SMBJ33D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ33D-M3/I.pdf
- Description:
- TVS DIODE 33VWM 52.5VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,374
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Product details
Overview
SMBJ33D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 33 V stand-off voltage (VWM), 37.3–40.0 V breakdown voltage (VBR) at 1 mA, 52.5 V clamping voltage (VC) at 11.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.
For engineers reviewing the SMBJ33D-M3/I datasheet, SMBJ33D-M3/I pinout, SMBJ33D-M3/I application, or SMBJ33D-M3/I equivalent, this page delivers verified electrical parameters, thermal derating behavior, M3-grade halogen-free RoHS compliance, J-STD-020 MSL Level 1 moisture sensitivity, and real-world clamping performance under repetitive surge conditions.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified VBR range (37.3–40.0 V). Its low incremental surge resistance and fast response time (<1 ns) enable effective suppression of ESD, lightning-induced transients, and inductive switching spikes on 24–36 V systems.
Thermal design is constrained by RθJA = 125 °C/W (on minimum pad layout) and TJ max = 150 °C, requiring careful PCB copper area planning. Power dissipation is limited to 1.0 W at TA = 25 °C and derates linearly above that temperature per Fig. 5 - critical for sustained surge duty cycles in enclosed industrial enclosures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 33 V - maximum continuous reverse operating voltage before significant leakage; defines safe DC rail margin for 24 V nominal systems. |
| VBR (Breakdown Voltage) | 37.3–40.0 V at IT = 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots. |
| VC (Clamping Voltage) | 52.5 V at IPPM = 11.5 A - limits downstream IC stress during 600 W transient events; enables compatibility with 55 V-rated MOSFETs. |
| PPPM (Peak Pulse Power) | 600 W with 10/1000 μs waveform - supports IEC 61000-4-5 Level 4 surge immunity testing (4 kV line-to-ground). |
| ID (Reverse Leakage) | ≤0.5 μA at VWM - negligible standby current draw; preserves battery life in always-on sensor nodes. |
| TJ max | 150 °C - allows operation in under-hood automotive or high-ambient industrial environments without thermal shutdown. |
| Package | SMB (DO-214AA) - 2-pin SMD footprint with cathode band marking; compatible with standard reflow profiles up to 260 °C peak. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, halogen-free and RoHS-compliant (M3 suffix), MSL Level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to system ground or lowest potential node; forms return path for clamped surge current. |
| Cathode (banded end) | High-side transient input terminal | Connected to protected line (e.g., 24 V rail); avalanche conduction begins here when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Ensures consistent clamping threshold across batches - reduces need for post-production margin tuning in safety-critical 24 V power systems. |
| 600 W peak pulse power (10/1000 μs) | Withstands repeated surges per IEC 61000-4-5 without degradation - validated for >1000 cycles at rated waveform. |
| MSL Level 1 rating | Allows unlimited floor life and standard reflow without baking - simplifies SMT line integration and reduces handling overhead. |
| Low leakage (≤0.5 μA at VWM) | Minimizes quiescent power loss in battery-backed or energy-harvesting applications where standby current must stay below 1 μA. |
| M3 qualification | Meets JESD 201 Class 2 whisker test - eliminates tin whisker risk in long-life industrial deployments (>10 years MTBF). |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
Use Scenario: Protection of gate drivers and DC bus sensing circuits against flyback transients from IGBT switching. IC Role / Device Role: Unidirectional TVS placed between 24 V auxiliary rail and ground, clamping inductive kickback spikes. Use Value: Limits voltage overshoot to ≤52.5 V, preventing damage to isolated amplifiers and optocouplers rated for 55 V absolute maximum. |
Use Scenario: Input-stage surge protection on -48 V telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role: Primary clamping device on secondary-side DC distribution, coordinated with upstream MOVs. Use Value: Delivers 600 W pulse handling with <1 ns response - meets GR-1089-CORE Level 4 requirements without adding series impedance. |
| Automotive Body Control Modules | Smart Sensor Signal Conditioning |
Use Scenario: CAN/LIN bus power rail protection in BCMs subjected to load dump (ISO 7637-2 Pulse 5a). IC Role / Device Role: Standoff-clamp TVS on 12 V/24 V supply feeding microcontroller and driver ICs. Use Value: Withstands 35 V/100 ms load dump events via thermal mass and low RθJM (20 °C/W), avoiding latch-up in downstream LDOs. |
Use Scenario: Overvoltage guard on analog front-end inputs of industrial pressure/temperature sensors connected to long cables. IC Role / Device Role: First-line defense against ESD (IEC 61000-4-2 ±8 kV contact) and cable-coupled transients. Use Value: 0.5 μA leakage preserves 24-bit ADC reference stability; 52.5 V clamping protects rail-to-rail op-amps with 5.5 V supply. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33A-M3/I | Bidirectional variant; symmetric VBR (37.3–40.0 V) in both polarities; same VC and PPPM. | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN FD) where polarity reversal occurs. | Select SMBJ33A-M3/I only if bidirectional clamping is mandated; SMBJ33D-M3/I provides lower leakage and simpler biasing for DC rails. |
| SMCJ33A-M3/I | Larger SMC (DO-214AB) package; higher 1500 W PPPM rating; identical VWM/VBR/VC specs. | Suitable for higher-energy surge environments (e.g., outdoor telecom cabinets) where 600 W is insufficient. | Choose SMCJ33A-M3/I when board space permits and surge energy exceeds 600 W; SMBJ33D-M3/I optimizes density for space-constrained PCBs. |
Compared with SMBJ33A-M3/I and SMCJ33A-M3/I, the SMBJ33D-M3/I offers optimal balance of compact SMB footprint, precise unidirectional clamping, and verified 600 W surge capability - making it the preferred choice for cost-sensitive, space-limited 24 V DC protection where polarity is fixed and energy demands are moderate.
Availability
SMBJ33D-M3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBJ33D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for demanding industrial, automotive, and computing applications.
The SMBJ series was engineered specifically for surface-mount transient suppression in compact, high-density power electronics - emphasizing tight VBR tolerance, low leakage, and MSL Level 1 manufacturability.
FAQ
What is the clamping voltage of SMBJ33D-M3/I at its rated peak pulse current?
The SMBJ33D-M3/I has a maximum clamping voltage (VC) of 52.5 V at 11.5 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is measured under standardized surge conditions and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream components like 55 V-rated MOSFETs remain within safe operating area.
Is SMBJ33D-M3/I suitable for automotive applications requiring AEC-Q200 qualification?
No, SMBJ33D-M3/I is not AEC-Q200 qualified. It is an industrial-grade TVS diode meeting JESD201 Class 2 whisker resistance and MSL Level 1, but lacks the extended temperature cycling, humidity testing, and failure analysis required for automotive qualification. For AEC-Q200-compliant alternatives, consult Vishay's Automotive TVS portfolio such as the 1.5SMC33AQ series.
What does the "M3" suffix indicate in SMBJ33D-M3/I?
The "M3" suffix denotes Vishay's halogen-free, RoHS-compliant construction with matte tin-plated leads qualified to JESD 201 Class 2 for whisker resistance. It also confirms compliance with J-STD-020 MSL Level 1 - meaning the SMBJ33D-M3/I can be stored indefinitely at ambient conditions and processed using standard lead-free reflow profiles without baking.
Can SMBJ33D-M3/I be used in bidirectional signal line protection?
No, SMBJ33D-M3/I is unidirectional and must not be used on AC or polarity-reversing lines. Its cathode band marks the high-side terminal; reverse connection will block normal operation and fail to clamp negative transients. For bidirectional protection, use the SMBJ33CD-M3/I or SMBJ33A-M3/I variants, which provide symmetrical clamping in both directions.
What is the thermal resistance junction-to-ambient for SMBJ33D-M3/I on standard PCB layout?
The SMBJ33D-M3/I exhibits a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended pad layout per Vishay's datasheet. This value increases significantly with reduced copper area and impacts steady-state power handling - limiting continuous dissipation to 1.0 W at 25 °C ambient and requiring derating above that temperature per Figure 5.
SMBJ33D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 37.3V
- Voltage - Clamping (Max) @ Ipp:
- 52.5V
- Current - Peak Pulse (10/1000µs):
- 11.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ33D-M3/I FAQ
1.How can I place an order for SMBJ33D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ33D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ33D-M3/I reliable?
The price and inventory of SMBJ33D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ33D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ33D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ33D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ33D-M3/I?
SMBJ33D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ33D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ33D-M3/I?
For technical support, including SMBJ33D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ33D-M3/I requirements.
6.How does Aetrix verify that SMBJ33D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ33D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ33D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ33D-M3/I?
All SMBJ33D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ33D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ33D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ33D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ33D-M3/I Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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