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Vishay General Semiconductor - Diodes Division SMBJ33HE3/5B

Part No.:
SMBJ33HE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ33HE3/5B.pdf
Description:
TVS DIODE 33VWM 59VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,616

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Product details

Overview

SMBJ33HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 33 V standoff voltage (VWM), 36.7–40.6 V breakdown voltage (VBR) at 1 mA, 53.3 V clamping voltage (VC) at 11.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on power rails and signal lines in industrial motor drives.

For engineers reviewing the SMBJ33HE3/5B datasheet, SMBJ33HE3/5B pinout, SMBJ33HE3/5B application, or SMBJ33HE3/5B equivalent, key selection criteria include clamping performance under 10/1000 µs surge, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This TVS diode operates as a unidirectional avalanche clamp, leveraging glass-passivated junction technology to deliver sub-nanosecond response time and low incremental surge resistance. Its design targets transient suppression from inductive switching, ESD, and lightning-induced surges in DC power distribution networks.

The device is rated for -55 °C to +150 °C operating junction temperature, meets MSL Level 1 per J-STD-020 (peak reflow 260 °C), and is RoHS-compliant with matte tin-plated leads solderable per J-STD-002. The HE3 suffix confirms AEC-Q101 qualification for automotive-grade reliability.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 33 V - maximum continuous reverse working voltage before leakage exceeds 1 µA; defines safe operating margin below clamping threshold
VBR (min/max) 36.7 V / 40.6 V at 1 mA - guaranteed avalanche onset range; ensures predictable turn-on during transients
VC @ IPPM 53.3 V at 11.3 A - clamped voltage during 600 W 10/1000 µs surge; limits stress on downstream ICs and MOSFETs
PPPM 600 W - peak pulse power handling capability; supports repetitive 0.01% duty cycle surges without degradation
RθJA 100 °C/W - junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs derating above 25 °C ambient
TJ max +150 °C - maximum junction temperature; enables operation in under-hood automotive and industrial control environments

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated for J-STD-002 solderability.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal in forward bias; connected to ground or low-side reference in unidirectional configuration Provides return path for surge current during reverse-transient clamping; must be routed with low-inductance ground plane
Cathode Marked end (band); high-side connection point in unidirectional TVS placement Connected to protected line (e.g., 33 V rail or sensor input); determines polarity-sensitive surge shunting direction

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and body electronics; supports long-term reliability under thermal cycling and vibration
600 W peak pulse power (10/1000 µs) Withstands high-energy transients from load dump or inductive kickback without failure; enables single-device protection for 12 V/24 V systems
Low clamping ratio (VC/VBR ≈ 1.37) Minimizes overvoltage overshoot during clamping; protects 3.3 V/5 V logic interfaces when used with series impedance
MSL Level 1 moisture sensitivity Allows unlimited floor life and standard reflow without baking; compatible with high-throughput SMT assembly lines
Glass-passivated junction Ensures stable VBR tolerance and low leakage (<1 µA at VWM); improves long-term stability in humid or high-bias environments

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 33 V supply rail in automotive body control module against ISO 7637-2 Pulse 1/2a/5a transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between rail and chassis ground; clamps surges within <1 ns to limit voltage to ≤53.3 V.

Use Value: Prevents latch-up or gate oxide damage in MCU power inputs and CAN transceivers sharing the same rail.

Use Scenario: Shielding analog output of pressure sensor (0–10 V) from ESD and cable discharge events in factory automation.

IC Role / Device Role / Timing Role: TVS mounted at connector entry point, anode to signal ground, cathode to sensor output line.

Use Value: Limits transient voltage to 53.3 V while maintaining <1 µA leakage at 33 V, preserving sensor accuracy and ADC resolution.

DC Motor Drive Gate Driver Protection Telecom Power Supply Input Stage

Use Scenario: Safeguarding high-side N-channel MOSFET gate driver ICs from inductive flyback spikes during PWM switching.

IC Role / Device Role / Timing Role: TVS placed across gate-source terminals or between gate drive rail and ground.

Use Value: Clamps gate-source voltage to ≤53.3 V, preventing gate oxide rupture and ensuring reliable MOSFET commutation.

Use Scenario: Front-end protection of 48 V telecom rectifier input against lightning-induced surges per IEC 61000-4-5 Level 3.

IC Role / Device Role / Timing Role: Primary unidirectional TVS on DC input bus, coordinated with upstream MOV and fuse.

Use Value: Absorbs 600 W surge energy while holding clamped voltage below 53.3 V, enabling downstream DC-DC converter survival.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ33A-E3/5B Commercial-grade (non-AEC-Q101); identical electrical specs and SMB package Lacks automotive qualification; suitable for industrial/commercial power supplies but not under-hood use Select SMBJ33A-E3/5B where AEC-Q101 is not required and cost optimization is prioritized
SAC33-030 Same VWM (33 V) and VC (53.3 V), but in smaller SOD-123FL package; lower IPPM (8.5 A) and PPPM (300 W) Lower surge capacity; appropriate for space-constrained, low-energy signal-line protection only Choose SAC33-030 only for secondary-level protection on low-current sensor lines where PCB area is critical

Compared with SMBJ33A-E3/5B, SMBJ33HE3/5B adds AEC-Q101 qualification without sacrificing clamping performance or package compatibility; versus SAC33-030, it delivers double the surge power handling in a slightly larger but thermally superior SMB footprint.

Availability

SMBJ33HE3/5B is available at Aetrix Electronics and suitable for automotive ECUs, industrial motor controllers, telecom power supplies, and sensor interface modules requiring stable component supply across extended production lifecycles.

Supply support for SMBJ33HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and power efficiency.

The SMBJ series is engineered for high-reliability transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where robustness against electrical overstress is mission-critical.

FAQ

What is the clamping voltage of SMBJ33HE3/5B at its rated peak pulse current?

The SMBJ33HE3/5B has a maximum clamping voltage (VC) of 53.3 V at 11.3 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ33HE3/5B maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).

Is SMBJ33HE3/5B suitable for automotive applications?

Yes, SMBJ33HE3/5B is AEC-Q101 qualified, as indicated by the "HE3" suffix, making it suitable for automotive applications including body electronics, infotainment power rails, and ADAS sensor interfaces. It meets stringent requirements for thermal cycling, mechanical shock, and long-term reliability under under-hood conditions. The SMBJ33HE3/5B is explicitly listed in Vishay's AEC-Q101 qualified product documentation.

What is the standoff voltage rating for SMBJ33HE3/5B?

The standoff voltage (VWM) of SMBJ33HE3/5B is 33 V - the maximum DC or continuous reverse voltage the device can withstand without exceeding 1 µA leakage current. This rating ensures stable operation on nominal 33 V power buses while retaining sufficient margin below the 36.7–40.6 V breakdown range. The SMBJ33HE3/5B is designed to remain non-conductive until transients exceed VBR.

Does SMBJ33HE3/5B have a bidirectional variant?

No, SMBJ33HE3/5B is unidirectional only, as confirmed by its part number suffix and datasheet designation. Bidirectional variants use the "CA" suffix (e.g., SMBJ33CA). The SMBJ33HE3/5B features a cathode band marking and conducts only in reverse avalanche mode; forward conduction is limited to typical diode behavior below 3.5 V. For AC-coupled or symmetrical transient protection, SMBJ33CA-E3/5B would be the appropriate counterpart.

What package type does SMBJ33HE3/5B use and what are its mounting requirements?

SMBJ33HE3/5B uses the SMB (DO-214AA) surface-mount package, with dimensions of 4.57 mm × 3.94 mm × 2.20 mm. It requires 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for rated thermal performance and 600 W pulse handling. The SMBJ33HE3/5B is MSL Level 1 and compatible with standard lead-free reflow profiles peaking at 260 °C, with no pre-bake required.

SMBJ33HE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
33V
Voltage - Breakdown (Min):
36.7V
Voltage - Clamping (Max) @ Ipp:
59V
Current - Peak Pulse (10/1000µs):
10.2A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ33HE3/5B FAQ

1.How can I place an order for SMBJ33HE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ33HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ33HE3/5B reliable?

The price and inventory of SMBJ33HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ33HE3/5B is usually 5 days.

3.What payment methods are accepted for SMBJ33HE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ33HE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ33HE3/5B?

SMBJ33HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ33HE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ33HE3/5B?

For technical support, including SMBJ33HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ33HE3/5B requirements.

6.How does Aetrix verify that SMBJ33HE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBJ33HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ33HE3/5B meets industry standards.

7.What is the process for return or replacement of SMBJ33HE3/5B?

All SMBJ33HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ33HE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ33HE3/5B part is unused and in its original packaging.

Return procedure for SMBJ33HE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ33HE3/5B Tags

  • SMBJ33HE3/5B
  • SMBJ33HE3/5B PDF
  • SMBJ33HE3/5B Datasheet
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  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ33HE3/5B
  • Buy SMBJ33HE3/5B
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