Vishay General Semiconductor - Diodes Division SMBJ36HE3/5B
- Part No.:
- SMBJ36HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ36HE3/5B.pdf
- Description:
- TVS DIODE 36VWM 64.3VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:6,920
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ36HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 36 V stand-off voltage (VWM), 40.0–44.2 V breakdown voltage (VBR) at 1 mA, 58.1 V maximum clamping voltage (VC) at 10.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive ECUs, industrial I/O modules, and telecom power supplies.
For engineers reviewing the SMBJ36HE3/5B datasheet, SMBJ36HE3/5B pinout, SMBJ36HE3/5B application, or SMBJ36HE3/5B equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and real-world clamping behavior under surge conditions.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VWM = 36 V, it avalanches into low-impedance conduction to divert transient energy away from downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ps), while the SMB package supports automated placement and meets MSL Level 1 reflow profile (260 °C peak).
The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), exhibits low incremental surge resistance, and maintains clamping performance across –55 °C to +150 °C operating junction temperature. Its 0.057 %/°C VBR temperature coefficient ensures predictable voltage threshold drift under thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36 V - Maximum continuous reverse operating voltage before avalanche onset; defines safe DC rail margin. |
| VBR (min/max) | 40.0 V / 44.2 V at IT = 1 mA - Confirmed breakdown window ensures reliable triggering without premature conduction. |
| VC @ IPPM | 58.1 V at 10.3 A - Clamping voltage during 10/1000 µs surge; limits protected IC stress to sub-60 V level. |
| PPPM | 600 W - Peak pulse power handling capability per 10/1000 µs waveform; validates protection against IEC 61000-4-5 Level 4 surges. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs derating above 25 °C ambient. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive and high-temperature industrial environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including HTOL, TC, UHAST, and ESD testing per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode-band marked unidirectional configuration. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); matte tin-plated leads, J-STD-002 solderable.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / low-side reference | Connected to ground or lower-potential node; completes shunt path during reverse overvoltage events. |
| Cathode | Reverse voltage sensing / clamping node | Connected to protected line (e.g., 36 V rail); conducts when VKA ≥ VBR, clamping to ≤58.1 V. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 surge immunity requirements up to Level 4 (4 kV line-earth, 2 kV line-line). |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control, body electronics, and ADAS power domains. |
| Glass passivated junction | Ensures stable VBR tolerance, low leakage (<1 µA at VWM), and long-term reliability under thermal cycling. |
| MSL Level 1 (260 °C peak) | Supports lead-free reflow assembly without popcorn cracking or delamination risk. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes voltage overshoot during transients, reducing stress on downstream MOSFETs and ICs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 36 V battery-fed microcontroller power inputs in vehicle body control modules against load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Shunt-type transient voltage suppressor placed directly at MCU VIN pin to clamp surges before LDO input. Use Value: Limits voltage excursion to ≤58.1 V during 100 A/100 ms load dump events, preventing MCU brownout or latch-up. |
Use Scenario: Safeguarding analog sensor signal lines (e.g., pressure, temperature) in factory automation PLC I/O cards exposed to relay coil flyback. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and ADC input to absorb inductive kickback. Use Value: Clamps 100 V transients to <60 V within <1 ps, preserving 16-bit ADC accuracy and avoiding front-end amplifier saturation. |
| Telecom DC Power Input Protection | Motor Drive Gate Driver Supply Protection |
Use Scenario: Securing 48 V DC input stage of PoE-powered network switches against lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Primary-stage TVS on main DC bus upstream of DC/DC converters and hot-swap controllers. Use Value: Absorbs 600 W surge energy without degradation, maintaining system uptime during Category A/B lightning events. |
Use Scenario: Shielding isolated gate driver bias supply (e.g., 36 V auxiliary rail) in servo motor inverters from cross-conduction transients. IC Role / Device Role / Timing Role: Localized TVS adjacent to gate driver IC to suppress Miller-induced spikes on bootstrap supply. Use Value: Prevents false turn-on of IGBTs/MOSFETs by limiting gate drive rail overshoot to <60 V during switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A-E3/5B | Commercial-grade (non-AEC-Q101), same VWM/VC/PPPM, identical SMB package and pinout. | Lacks automotive qualification; suitable for industrial/commercial power supplies where AEC-Q101 is not mandated. | Select SMBJ36A-E3/5B for cost-sensitive non-automotive designs requiring identical electrical performance. |
| SMAJ36AHE3/A | Lower PPPM = 400 W, SMA package (smaller footprint), same VWM = 36 V but higher VC = 58.1 V at reduced IPPM. | Reduced surge handling; appropriate for space-constrained PCBs with lower-energy threat profiles (e.g., IEC 61000-4-4). | Choose SMAJ36AHE3/A only when board area is critical and surge energy does not exceed 400 W capability. |
Compared with SMBJ36A-E3/5B, the SMBJ36HE3/5B adds AEC-Q101 qualification without sacrificing clamping performance or package compatibility; versus SMAJ36AHE3/A, it delivers 50 % higher surge power headroom in the same voltage class but requires larger SMB layout area.
Availability
SMBJ36HE3/5B is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom power rectifier modules requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMBJ36HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where robustness, AEC-Q101 compliance, and precise clamping are mandatory design requirements.
FAQ
What is the maximum clamping voltage of SMBJ36HE3/5B under surge conditions?
The SMBJ36HE3/5B has a maximum clamping voltage (VC) of 58.1 V at 10.3 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per JEDEC standards and defines the upper voltage limit imposed on protected circuitry during transient events. The SMBJ36HE3/5B maintains this clamping performance across its full operating temperature range.
Is SMBJ36HE3/5B qualified for automotive applications?
Yes, SMBJ36HE3/5B is AEC-Q101 qualified, as confirmed by Vishay's documentation and the "HE3" suffix designation. It undergoes rigorous stress testing including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing to meet automotive reliability requirements. The SMBJ36HE3/5B is approved for use in engine control, body electronics, and infotainment power domains.
What is the standoff voltage and breakdown range for SMBJ36HE3/5B?
The SMBJ36HE3/5B has a reverse stand-off voltage (VWM) of 36 V and a breakdown voltage (VBR) range of 40.0 V to 44.2 V at test current IT = 1 mA. This ensures reliable blocking below 36 V while guaranteeing avalanche conduction onset no later than 44.2 V - critical for protecting 36 V nominal systems against overvoltage without false triggering.
Does SMBJ36HE3/5B have a unidirectional or bidirectional configuration?
SMBJ36HE3/5B is a unidirectional TVS diode, indicated by the absence of "CA" suffix and presence of cathode band marking. It conducts only in reverse bias (anode-to-cathode), making it suitable for DC rail protection where polarity is fixed. Bidirectional variants (e.g., SMBJ36CA) are available separately for AC or floating signal line protection.
What package type and mounting specifications apply to SMBJ36HE3/5B?
SMBJ36HE3/5B uses the SMB (DO-214AA) surface-mount package with standardized dimensions of 4.57 mm × 3.94 mm × 2.20 mm. It features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, supports MSL Level 1 reflow (260 °C peak), and is optimized for automated pick-and-place assembly. The SMBJ36HE3/5B requires 0.2" × 0.2" copper pads per terminal for thermal and mechanical reliability.
SMBJ36HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40V
- Voltage - Clamping (Max) @ Ipp:
- 64.3V
- Current - Peak Pulse (10/1000µs):
- 9.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ36HE3/5B FAQ
1.How can I place an order for SMBJ36HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ36HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ36HE3/5B reliable?
The price and inventory of SMBJ36HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ36HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ36HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ36HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ36HE3/5B?
SMBJ36HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ36HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ36HE3/5B?
For technical support, including SMBJ36HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ36HE3/5B requirements.
6.How does Aetrix verify that SMBJ36HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ36HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ36HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ36HE3/5B?
All SMBJ36HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ36HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ36HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ36HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ36HE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)