Vishay General Semiconductor - Diodes Division SMBJ3V3HE3/5B
- Part No.:
- SMBJ3V3HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ3V3HE3/5B.pdf
- Description:
- TVS DIODE 3.3VWM 10.3VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,530
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ3V3HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection of 3.3 V supply rails. It features a 3.3 V standoff voltage (VWM), 4.1 V minimum breakdown voltage (VBR), 7.3 V clamping voltage at 50 A (10/1000 µs), 600 W peak pulse power, and SMB (DO-214AA) package - deployed to safeguard ICs, MOSFETs, and sensor signal lines against inductive switching transients and ESD.
For engineers reviewing the SMBJ3V3HE3/5B datasheet, SMBJ3V3HE3/5B pinout, SMBJ3V3HE3/5B application, or SMBJ3V3HE3/5B equivalent, key selection criteria include clamping performance at 50 A, thermal resistance (RθJL = 20 °C/W), AEC-Q101 qualification status, junction capacitance (5200 pF @ 0 V), and compatibility with automated SMT assembly per J-STD-002.
Technical Context
This TVS diode operates as a unidirectional shunt clamp, triggered when reverse voltage exceeds its 4.1 V breakdown threshold. Its low clamping ratio (VC/VWM ≈ 2.21) ensures rapid energy diversion during transients while maintaining safe margin below 3.3 V system tolerance limits.
Designed for automotive-grade reliability, SMBJ3V3HE3/5B meets AEC-Q101 stress testing requirements and supports lead-free reflow up to 260 °C (MSL Level 1). Its 5200 pF junction capacitance and 200 A peak pulse current capability (8/20 µs) make it suitable for protecting low-speed digital and analog interfaces without signal integrity compromise.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 3.3 V - Maximum continuous reverse working voltage; defines upper limit of normal operation before clamping initiates |
| VBR (min) | 4.1 V - Minimum breakdown voltage at 1 mA test current; ensures reliable turn-on above nominal rail |
| VC @ IPP = 50 A | 7.3 V - Clamped voltage under 10/1000 µs transient; limits downstream voltage stress during surge events |
| PPPM | 600 W - Peak pulse power handling (10/1000 µs); determines survivability against common industrial surges |
| Junction Capacitance | 5200 pF @ 0 V, 1 MHz - Impacts high-frequency signal integrity; appropriate for DC/low-speed lines, not RF or USB |
| TJ max | 175 °C - Maximum junction temperature; enables operation in under-hood automotive environments |
| RθJL | 20 °C/W - Thermal resistance junction-to-lead; informs PCB copper pad design for thermal management |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix), AEC-Q101 qualified. Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or low-impedance return plane; completes clamping loop during overvoltage events |
| Cathode | Protected line connection | Connected directly to 3.3 V rail or signal line; absorbs transient energy when voltage exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive electronics use including engine control units and ADAS sensor interfaces |
| 600 W peak pulse power | Withstands ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 surge waveforms in industrial applications |
| Clamping voltage ≤ 7.3 V @ 50 A | Keeps protected 3.3 V logic devices within absolute maximum rating limits during 10/1000 µs transients |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with high-volume manufacturing |
| Low RθJL = 20 °C/W | Supports sustained power dissipation on minimal PCB copper; reduces need for oversized heatsinking |
Applications
| Automotive Sensor Protection | Industrial PLC I/O Protection |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., temperature, pressure) in vehicle ECUs exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between 3.3 V supply and ground, clamping transients before they reach sensitive analog front-ends. Use Value: Prevents latch-up and permanent damage in AEC-Q100 Grade 2 ICs by limiting voltage excursion to ≤7.3 V during 50 A surges. | Use Scenario: Safeguarding digital input modules in programmable logic controllers subjected to relay coil flyback and field wiring ESD. IC Role / Device Role / Timing Role: Standoff-connected TVS on 3.3 V logic-level inputs, absorbing inductive kickback from 24 V solenoid drivers via optocoupler isolation stages. Use Value: Maintains functional safety integrity by ensuring no transient exceeds 3.3 V rail tolerance, avoiding false triggering or firmware lockup. |
| Consumer IoT Power Rail Protection | Medical Diagnostic Interface Protection |
Use Scenario: Securing 3.3 V microcontroller supply rails in battery-powered smart home hubs connected to external wired sensors. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main VDD line, coordinated with upstream fuse and downstream LDO for layered protection. Use Value: Extends device lifetime by suppressing >200 V transients induced by nearby AC mains switching, validated per IEC 61000-4-2 Level 4. | Use Scenario: Shielding isolated SPI/I²C communication lines between patient monitoring SoCs and analog front-end ASICs in portable diagnostic tools. IC Role / Device Role / Timing Role: Low-capacitance TVS on bidirectional data lines, placed adjacent to connectors to intercept ESD before reaching isolation barriers. Use Value: Preserves signal fidelity (5200 pF < 10 ns rise time impact) while meeting IEC 60601-1-2 ESD immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ3V3AHE3/5B | Bidirectional variant; symmetric clamping for AC-coupled or dual-polarity signal lines | Required where reverse polarity transients or AC signals must be suppressed in both directions | Select SMBJ3V3AHE3/5B only if bidirectional protection is explicitly needed; otherwise SMBJ3V3HE3/5B offers lower leakage and tighter VWM margin |
| SMCJ3V3HE3/5B | Higher power rating (1500 W), larger SMC (DO-214AB) package, higher VC (11.2 V @ 100 A) | Suitable for systems requiring greater surge margin or longer transient duration handling | Choose SMCJ3V3HE3/5B when 600 W is insufficient; verify PCB space and thermal layout accommodate larger footprint and higher clamping voltage |
Compared with SMBJ3V3HE3/5B, SMBJ3V3AHE3/5B adds bidirectional clamping at the cost of higher reverse leakage, while SMCJ3V3HE3/5B trades compact SMB size for higher surge capacity and relaxed layout constraints - making SMBJ3V3HE3/5B optimal for space-constrained 3.3 V rail protection with verified 600 W compliance.
Availability
SMBJ3V3HE3/5B is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC I/O cards, and consumer IoT power management circuits requiring stable component supply with AEC-Q101 assurance and full traceability.
Supply support for SMBJ3V3HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and automotive qualification.
The SMBJ series was developed specifically for high-reliability transient suppression in space-constrained 3.3 V to 170 V systems, balancing low clamping voltage, fast response, and AEC-Q101 compliance for harsh-environment electronics.
FAQ
What is the clamping voltage of SMBJ3V3HE3/5B at 50 A?
The SMBJ3V3HE3/5B has a maximum clamping voltage of 7.3 V when subjected to a 10/1000 µs transient pulse at 50 A. This value is measured under standardized test conditions and ensures that downstream 3.3 V components remain within their absolute maximum ratings during surge events. The SMBJ3V3HE3/5B achieves this with a tight VC/VWM ratio of approximately 2.21, critical for protecting modern low-voltage ICs.
Is SMBJ3V3HE3/5B AEC-Q101 qualified?
Yes, SMBJ3V3HE3/5B is AEC-Q101 qualified. The "HE3" suffix explicitly denotes RoHS-compliant and AEC-Q101 qualified construction, validated across temperature cycling, humidity bias, mechanical shock, and high-temperature operating life tests. This makes SMBJ3V3HE3/5B suitable for automotive applications such as body control modules and ADAS sensor interfaces where long-term reliability under thermal and vibration stress is mandatory.
What does the "5B" in SMBJ3V3HE3/5B indicate?
The "5B" in SMBJ3V3HE3/5B specifies the packaging configuration: 13-inch diameter plastic tape and reel, with a base quantity of 3200 units per reel. This format supports high-volume automated SMT placement and is compatible with industry-standard pick-and-place equipment. The "5B" designation is distinct from "52", which indicates a 7-inch reel with 750 units - both share identical electrical and mechanical specifications for SMBJ3V3HE3/5B.
Can SMBJ3V3HE3/5B be used for bidirectional signal line protection?
No, SMBJ3V3HE3/5B is unidirectional only and must not be used on AC-coupled or bidirectional signal lines without additional circuitry. Its cathode-anode polarity is fixed, with clamping active only for reverse-biased transients. For bidirectional protection, the SMBJ3V3AHE3/5B variant - which provides symmetrical clamping - is required. Using SMBJ3V3HE3/5B in bidirectional roles risks failure during positive-going transients on the anode side.
What is the junction capacitance of SMBJ3V3HE3/5B and how does it affect circuit design?
The SMBJ3V3HE3/5B exhibits a typical junction capacitance of 5200 pF at 0 V and 1 MHz. This relatively high capacitance limits its use to DC or low-frequency signal paths - such as power rails, reset lines, or slow digital interfaces - and makes it unsuitable for high-speed buses like USB, HDMI, or PCIe. Designers must verify that 5200 pF does not degrade rise/fall times or cause timing violations in the target application.
SMBJ3V3HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V
- Voltage - Breakdown (Min):
- 4.1V
- Voltage - Clamping (Max) @ Ipp:
- 10.3V
- Current - Peak Pulse (10/1000µs):
- 200A (8/20µs)
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 5200pF @ 1MHz
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ3V3HE3/5B FAQ
1.How can I place an order for SMBJ3V3HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ3V3HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ3V3HE3/5B reliable?
The price and inventory of SMBJ3V3HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ3V3HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ3V3HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ3V3HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ3V3HE3/5B?
SMBJ3V3HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ3V3HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ3V3HE3/5B?
For technical support, including SMBJ3V3HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ3V3HE3/5B requirements.
6.How does Aetrix verify that SMBJ3V3HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ3V3HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ3V3HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ3V3HE3/5B?
All SMBJ3V3HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ3V3HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ3V3HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ3V3HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ3V3HE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)