Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ3V3HE3_A/I

Part No.:
SMBJ3V3HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ3V3HE3_A/I.pdf
Description:
TVS DIODE 3.3VWM 10.3VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,365

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ3V3HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection of 3.3 V supply rails. It features a 3.3 V standoff voltage (VWM), 4.1 V minimum breakdown voltage (VBR), 7.3 V clamping voltage at 50 A (10/1000 μs), 600 W peak pulse power, and AEC-Q101 qualification for automotive use.

For engineers reviewing the SMBJ3V3HE3_A/I datasheet, SMBJ3V3HE3_A/I pinout, SMBJ3V3HE3_A/I application, or SMBJ3V3HE3_A/I equivalent, key selection criteria include clamping performance under 50 A transients, junction temperature limits up to 175 °C, unidirectional polarity with cathode band marking, and compliance with J-STD-020 MSL level 1 reflow profiles.

Technical Context

This TVS diode operates as a shunt-type transient protector, responding within picoseconds to divert surge current away from downstream ICs when line voltage exceeds VBR. Its low RθJL (20 °C/W) enables effective thermal dissipation during repetitive 8/20 μs surges up to 200 A, while the 5200 pF junction capacitance at 0 V is optimized for DC/low-speed signal line protection-not high-frequency data lines.

The device uses silicon avalanche technology in an SMB (DO-214AA) package with matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance. Its -5.3 × 10⁻⁴/°C VBR temperature coefficient ensures stable clamping across -65 °C to +175 °C operating range.

Key Specifications

ParameterValue and Actual Design Meaning
VWM3.3 V - Maximum continuous reverse working voltage before conduction begins; matches nominal 3.3 V logic/supply rail.
VBR (min)4.1 V - Minimum breakdown voltage at 1 mA test current; defines onset of avalanche clamping.
VC @ IPP = 50 A7.3 V - Clamped voltage during 10/1000 μs surge; limits stress on protected 3.3 V ICs to safe margin.
PPPM600 W - Peak pulse power handling capability; supports high-energy transients like load dump or ESD.
TJ max+175 °C - Maximum junction temperature; enables operation in under-hood automotive environments.
CJ @ 0 V5200 pF - Junction capacitance at zero bias; suitable for power rails and low-speed I/O, not USB or HDMI.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, molded case meeting UL 94 V-0 flammability rating; cathode indicated by color band.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Transient current sinkConnected to protected line; conducts avalanche current to ground during overvoltage events.
AnodeReference nodeTypically tied to system ground or low-impedance return path; completes shunt protection loop.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control units and ADAS sensor interfaces.
MSL Level 1Compatible with standard SMT reflow profiles up to 260 °C peak, no dry-pack required.
600 W peak pulse powerWithstands high-energy transients such as ISO 7637-2 Pulse 5a (load dump) without degradation.
Low clamping ratio (VC/VWM = 2.2)Minimizes overvoltage stress on 3.3 V devices compared to higher-ratio suppressors.

Applications

Automotive Body Control ModuleIndustrial PLC I/O Protection

Use Scenario: Protecting LIN bus transceivers and microcontroller GPIOs from battery line transients during ignition cycling.

IC Role / Device Role / Timing Role: Shunt TVS diode placed between LIN signal line and ground, clamping spikes before they reach the transceiver input.

Use Value: Prevents latch-up or permanent damage to 3.3 V transceivers during 100 V/50 ms load dump events per ISO 7637-2.

Use Scenario: Safeguarding analog input channels of 3.3 V ADCs against field-wiring induced surges in factory automation.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on sensor signal lines upstream of RC filtering and amplifier stages.

Use Value: Maintains measurement integrity by limiting transient excursions to ≤7.3 V, well below ADC absolute maximum ratings.

Medical Sensor InterfacePoint-of-Sale Terminal Power Rail

Use Scenario: Shielding low-power biomedical sensors (e.g., pulse oximeter front-end) from ESD and EFT events during handling or cable coupling.

IC Role / Device Role / Timing Role: Fast-response shunt protector on 3.3 V supply rail feeding precision op-amps and ADCs.

Use Value: Ensures uninterrupted operation by clamping 8/20 μs EFT bursts (up to 200 A) without forward conduction into sensitive analog circuitry.

Use Scenario: Securing 3.3 V core logic supply in retail kiosks exposed to AC mains switching noise and accidental short-circuits.

IC Role / Device Role / Timing Role: Standoff-rated TVS on main VCC rail, activated only during overvoltage-no leakage impact during normal operation.

Use Value: Delivers <200 μA reverse leakage at 3.3 V, preserving battery life in backup-powered configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ3V3HE3_B/ISame electrical specs; differs only in revision code (B vs A) and reel size (3200 pcs vs 3200 pcs); identical thermal and clamping behavior.No functional difference; both qualified to AEC-Q101 and rated for same automotive and industrial use cases.Select SMBJ3V3HE3_A/I when matching specific BOM revision requirements or inventory traceability to document revision 14-Apr-2023.
SMBJ3V3HM3_B/IHalogen-free variant with identical VWM, VBR, VC, and PPPM; same SMB package and AEC-Q101 qualification.Required where halogen-free compliance (IEC 61249-2-21) is mandated for PCB assembly or end-product environmental certification.Choose SMBJ3V3HM3_B/I for RoHS+halogen-free programs; otherwise SMBJ3V3HE3_A/I offers standard RoHS-compliant performance.

Compared with SMBJ3V3HE3_B/I and SMBJ3V3HM3_B/I, the SMBJ3V3HE3_A/I provides identical transient suppression performance and automotive qualification, differing only in revision identifier and halogen content-making it the baseline RoHS-compliant AEC-Q101 option for 3.3 V rail protection.

Availability

SMBJ3V3HE3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and medical sensor interfaces requiring stable component supply with full AEC-Q101 traceability and MSL level 1 reflow compatibility.

Supply support for SMBJ3V3HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade validation.

The SMBJ series is engineered specifically for high-energy transient suppression in harsh environments, targeting 3.3 V to 440 V systems where fast clamping, low leakage, and AEC-Q101 compliance are mandatory.

FAQ

What is the clamping voltage of SMBJ3V3HE3_A/I at 50 A?

The SMBJ3V3HE3_A/I clamps to a maximum of 7.3 V when subjected to a 10/1000 μs transient pulse at 50 A. This value is guaranteed per the Vishay datasheet (Document Number: 88940) and ensures protected 3.3 V components remain within safe operating limits during surge events. The clamping voltage is measured at the device terminals under standardized test conditions and reflects actual system-level protection capability.

Is SMBJ3V3HE3_A/I suitable for automotive applications?

Yes, SMBJ3V3HE3_A/I is AEC-Q101 qualified and explicitly designated for automotive use, as confirmed by its HE3 suffix and documentation in Vishay's official datasheet. It meets stringent requirements for temperature cycling, humidity resistance, and mechanical shock, making it appropriate for engine control units, infotainment systems, and ADAS sensor interfaces where reliability under vibration and thermal stress is critical.

What does the "HE3" suffix mean in SMBJ3V3HE3_A/I?

The "HE3" suffix in SMBJ3V3HE3_A/I indicates RoHS-compliant construction with AEC-Q101 qualification. Per Vishay's ordering nomenclature, "HE3" denotes the automotive-grade version-distinct from commercial "E3" (RoHS only) and "HM3" (halogen-free + AEC-Q101). The "A/I" denotes revision A and tape-and-reel packaging with 3200 units per reel.

What is the junction capacitance of SMBJ3V3HE3_A/I?

The SMBJ3V3HE3_A/I exhibits a typical junction capacitance (CJ) of 5200 pF at 0 V bias and 1 MHz, as specified in the Vishay datasheet. This value is relevant for assessing signal integrity impact on protected lines; it confirms suitability for DC power rails and low-speed digital or analog signals-but not high-frequency interfaces like USB 2.0 or CAN FD where sub-100 pF is typically required.

Does SMBJ3V3HE3_A/I have unidirectional or bidirectional polarity?

SMBJ3V3HE3_A/I is strictly unidirectional, as stated in the Vishay datasheet under FEATURES and ELECTRICAL CHARACTERISTICS. It protects only against positive transients on the cathode side relative to anode (ground), with a marked cathode band for correct PCB orientation. Bidirectional variants (e.g., SMBJ3V3CA) are separate part numbers and not interchangeable with SMBJ3V3HE3_A/I.

SMBJ3V3HE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V
Voltage - Breakdown (Min):
4.1V
Voltage - Clamping (Max) @ Ipp:
10.3V
Current - Peak Pulse (10/1000µs):
200A (8/20µs)
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
5200pF @ 1MHz
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ3V3HE3_A/I FAQ

1.How can I place an order for SMBJ3V3HE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ3V3HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ3V3HE3_A/I reliable?

The price and inventory of SMBJ3V3HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ3V3HE3_A/I is usually 5 days.

3.What payment methods are accepted for SMBJ3V3HE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ3V3HE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ3V3HE3_A/I?

SMBJ3V3HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ3V3HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ3V3HE3_A/I?

For technical support, including SMBJ3V3HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ3V3HE3_A/I requirements.

6.How does Aetrix verify that SMBJ3V3HE3_A/I is sourced from the original manufacturer or authorized distributors?

All SMBJ3V3HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ3V3HE3_A/I meets industry standards.

7.What is the process for return or replacement of SMBJ3V3HE3_A/I?

All SMBJ3V3HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ3V3HE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ3V3HE3_A/I part is unused and in its original packaging.

Return procedure for SMBJ3V3HE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ3V3HE3_A/I Tags

  • SMBJ3V3HE3_A/I
  • SMBJ3V3HE3_A/I PDF
  • SMBJ3V3HE3_A/I Datasheet
  • SMBJ3V3HE3_A/I Specifications
  • SMBJ3V3HE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ3V3HE3_A/I
  • Buy SMBJ3V3HE3_A/I
  • SMBJ3V3HE3_A/I Price
  • SMBJ3V3HE3_A/I Distributor
  • SMBJ3V3HE3_A/I Supplier
  • SMBJ3V3HE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER