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Vishay General Semiconductor - Diodes Division SMBJ3V3HE3_B/H
- Part No.:
- SMBJ3V3HE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ3V3HE3_B/H.pdf
- Description:
- 600W,3.3V UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,012
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Product details
Overview
SMBJ3V3HE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 3.3 V stand-off voltage (VWM), 600 W peak pulse power rating (10/1000 µs), clamping voltage of 8.1 V at 57.5 A peak pulse current, and operates across -55 °C to +150 °C junction temperature range - deployed on power rails and I/O lines of automotive ECUs and industrial sensor interfaces.
For engineers reviewing the SMBJ3V3HE3_B/H datasheet, SMBJ3V3HE3_B/H pinout, SMBJ3V3HE3_B/H application, or SMBJ3V3HE3_B/H equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, clamping behavior under surge conditions, and direct alternative part comparisons for ESD and lightning transient protection design.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its breakdown threshold (VBR min = 3.67 V at IT = 10 mA). Its low clamping ratio (VC/VBR ≈ 2.2) ensures rapid voltage limiting during transients such as ISO 7637-2 pulse 1/2a or IEC 61000-4-5 surges.
Designed for high-reliability automotive applications, SMBJ3V3HE3_B/H meets AEC-Q101 stress test requirements and is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine). Its MSL Level 1 moisture sensitivity and 260 °C lead-free reflow compatibility support automated SMT assembly without preconditioning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 3.3 V - Maximum continuous reverse operating voltage before conduction begins; sets minimum system rail margin for reliable blocking. |
| VBR (Breakdown Voltage) | 3.67 V to 4.06 V at 10 mA - Confirmed avalanche onset range; defines precise triggering point for transient suppression. |
| VC (Clamping Voltage) | 8.1 V at IPPM = 57.5 A (10/1000 µs) - Actual voltage seen by protected circuit during worst-case surge; enables safe IC-level tolerance design. |
| PPPM (Peak Pulse Power) | 600 W - Sustained energy absorption capability under standardized 10/1000 µs waveform; validates compliance with IEC 61000-4-5 Level 4. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; determines derating needed above 25 °C ambient. |
| TJ max. | +150 °C - Maximum allowable junction temperature; supports operation in under-hood automotive environments. |
| IFSM | 100 A - Peak forward surge current rating (8.3 ms half-sine); qualifies use in DC power line protection with high inrush events. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads; polarity indicated by cathode band (cathode terminal).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to lower-potential side (e.g., GND or return path); defines directionality of clamping action. |
| Cathode | Avalanche conduction node / Surge sink | Connected to protected line (e.g., 3.3 V rail); conducts transient current to ground when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including HTOL, TC, UHAST, and bond wire strength per JESD22 standards. |
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against severe transients like load dump spikes and inductive switching surges. |
| Low clamping voltage (8.1 V @ 57.5 A) | Minimizes stress on downstream 3.3 V logic ICs and microcontrollers during surge events. |
| MSL Level 1, 260 °C reflow compatible | Eliminates need for baking or special handling prior to PCB assembly; supports high-volume SMT production. |
| Glass passivated junction | Ensures stable VBR over time and temperature; reduces parameter drift in harsh thermal cycling environments. |
Applications
| Automotive Body Control Module (BCM) | Industrial CAN Transceiver Interface |
|---|---|
Use Scenario: Protects 3.3 V supply and signal lines in BCM nodes exposed to battery transients and load dump. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between 3.3 V rail and chassis ground. Use Value: Limits voltage excursions to ≤8.1 V during ISO 7637-2 pulse 1 (−100 V/50 Ω), preventing latch-up in MCU and PMIC. |
Use Scenario: Shields CANH/CANL pins of isolated transceivers from ESD and fast transients in factory automation networks. IC Role / Device Role / Timing Role: Low-capacitance TVS on differential bus lines with minimal signal distortion. Use Value: Clamps common-mode surges up to 600 W without degrading CAN FD bit timing integrity. |
| Medical Sensor Signal Conditioning Board | Smart Meter Power Input Stage |
Use Scenario: Safeguards analog front-end amplifiers and ADC inputs in portable diagnostic devices. IC Role / Device Role / Timing Role: Point-of-entry protection on 3.3 V bias rails feeding precision op-amps. Use Value: Maintains <1 µA leakage at 3.3 V (ID ≤ 1000 µA max), preserving input offset stability and SNR. |
Use Scenario: Guards AC/DC converter primary-side control ICs against lightning-induced surges on 3.3 V auxiliary supply. IC Role / Device Role / Timing Role: Primary-stage TVS on isolated 3.3 V bias derived from flyback transformer. Use Value: Withstands repetitive 10/1000 µs surges up to 600 W while maintaining TJ ≤ 150 °C under 50 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ3V3AHE3_A/H | Same VWM (3.3 V), identical SMB package and AEC-Q101 qualification; differs only in revision code (A vs B) and tape/reel packaging (7" vs 7" with different carrier specs). | No functional difference; suitable for same automotive and industrial designs requiring RoHS-compliant, AEC-Q101-rated TVS. | Select SMBJ3V3HE3_B/H for latest revision and documented B/H tape configuration per Vishay ordering guide. |
| SMCJ3V3AHE3_A/H | Higher PPPM (1500 W), larger SMC (DO-214AB) package; same VWM (3.3 V), VBR (3.67–4.06 V), and AEC-Q101 qualification. | Used where higher surge energy handling is required (e.g., 12 V system inputs); not drop-in due to larger footprint and thermal mass. | Choose SMCJ3V3AHE3_A/H only if 600 W is insufficient and PCB layout allows SMC pad expansion. |
Compared with SMBJ3V3HE3_B/H, SMBJ3V3AHE3_A/H offers identical protection performance with minor packaging revision differences, while SMCJ3V3AHE3_A/H provides 2.5× higher surge capacity at the cost of board space and thermal response speed - making SMBJ3V3HE3_B/H optimal for space-constrained 3.3 V rail protection where 600 W suffices.
Availability
SMBJ3V3HE3_B/H is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, medical diagnostics equipment, and smart metering systems requiring stable component supply with AEC-Q101 assurance and long-term lifecycle support.
Supply support for SMBJ3V3HE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets high-speed transient suppression in automotive, industrial, and communications systems, engineered to meet stringent AEC-Q101, IEC 61000-4-2/4-5, and ISO 7637-2 compliance requirements.
FAQ
What is the maximum clamping voltage of SMBJ3V3HE3_B/H at its rated peak pulse current?
The SMBJ3V3HE3_B/H has a maximum clamping voltage (VC) of 8.1 V when subjected to its peak pulse current (IPPM) of 57.5 A under the standard 10/1000 µs waveform. This value is measured per Figure 1 and Table 1 in Vishay Document 88392 and ensures protected circuits remain within safe operating limits during surge events. The SMBJ3V3HE3_B/H maintains consistent clamping performance across its qualified temperature range.
Is SMBJ3V3HE3_B/H qualified for automotive applications?
Yes, SMBJ3V3HE3_B/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in Revision 09-Jan-2024 of Document 88392. It undergoes stress testing including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing - making it suitable for under-hood and cabin modules. The SMBJ3V3HE3_B/H meets automotive-grade reliability requirements without derating.
What is the standoff voltage (VWM) and why is it critical for SMBJ3V3HE3_B/H placement?
The standoff voltage (VWM) of SMBJ3V3HE3_B/H is 3.3 V - the maximum DC or continuous reverse voltage the device blocks without significant leakage. This matches standard 3.3 V logic rails, ensuring the SMBJ3V3HE3_B/H remains non-conductive during normal operation while triggering promptly during overvoltage. Exceeding VWM risks premature conduction and increased power dissipation, so SMBJ3V3HE3_B/H must be placed only on circuits operating ≤3.3 V nominal.
Does SMBJ3V3HE3_B/H have polarity markings, and how is it oriented on the PCB?
Yes, SMBJ3V3HE3_B/H is unidirectional and marked with a cathode band on the package body. During PCB layout, the cathode (banded end) must connect to the line being protected (e.g., 3.3 V rail), and the anode to ground. Incorrect orientation renders the SMBJ3V3HE3_B/H ineffective for reverse-transient suppression and may cause forward conduction failure. The SMBJ3V3HE3_B/H pinout follows standard DO-214AA polarity conventions.
What thermal derating applies to SMBJ3V3HE3_B/H above 25 °C ambient?
SMBJ3V3HE3_B/H exhibits linear thermal derating above 25 °C ambient, based on its RθJA of 100 °C/W and maximum junction temperature of +150 °C. For example, at 75 °C ambient, its peak pulse power must be reduced to 400 W (600 W × [1 − (75 − 25)/125]). Derating curves are provided in Figure 2 of Vishay Document 88392. The SMBJ3V3HE3_B/H requires no additional heatsinking on standard 0.2" × 0.2" copper pads.
SMBJ3V3HE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V
- Voltage - Breakdown (Min):
- 4.1V
- Voltage - Clamping (Max) @ Ipp:
- 7.3V
- Current - Peak Pulse (10/1000µs):
- 50A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 5200pF @ 1MHz
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ3V3HE3_B/H FAQ
1.How can I place an order for SMBJ3V3HE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ3V3HE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ3V3HE3_B/H reliable?
The price and inventory of SMBJ3V3HE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ3V3HE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ3V3HE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ3V3HE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ3V3HE3_B/H?
SMBJ3V3HE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ3V3HE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ3V3HE3_B/H?
For technical support, including SMBJ3V3HE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ3V3HE3_B/H requirements.
6.How does Aetrix verify that SMBJ3V3HE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ3V3HE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ3V3HE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ3V3HE3_B/H?
All SMBJ3V3HE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ3V3HE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ3V3HE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ3V3HE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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