My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ3V3HM3/H
- Part No.:
- SMBJ3V3HM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ3V3HM3/H.pdf
- Description:
- TVS DIODE 3.3VWM 7.3VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,374
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ3V3HM3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection of 3.3 V supply rails and signal lines. It features a 3.3 V standoff voltage (VWM), 4.1 V minimum breakdown voltage (VBR), 7.3 V clamping voltage at 50 A (10/1000 μs), 600 W peak pulse power, and SMB (DO-214AA) package - used to safeguard sensitive ICs, MOSFETs, and sensor interfaces against ESD and inductive switching transients.
For engineers reviewing the SMBJ3V3HM3/H datasheet, SMBJ3V3HM3/H pinout, SMBJ3V3HM3/H application, or SMBJ3V3HM3/H equivalent, key selection criteria include clamping performance at 50 A IPP, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, junction capacitance (5200 pF at 0 V), and compatibility with automated SMT assembly per J-STD-002.
Technical Context
The SMBJ3V3HM3/H operates as a unidirectional avalanche diode that enters conduction when reverse voltage exceeds its 4.1 V breakdown threshold, limiting transient energy by clamping to ≤7.3 V at 50 A (10/1000 μs) and ≤10.3 V at 200 A (8/20 μs). Its 5200 pF junction capacitance and -5.3 × 10⁻⁴ /°C VBR temperature coefficient are critical for low-speed data line and power rail protection where capacitive loading must be managed.
Designed for automotive-grade reliability, the HM3 suffix denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification, MSL Level 1 rating (260 °C reflow peak), and JESD 201 Class 2 whisker resistance. It sustains 60 A non-repetitive forward surge current and operates across -65 °C to +175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 3.3 V - Maximum continuous reverse working voltage; defines safe operating ceiling before leakage rises sharply. |
| VBR (min) | 4.1 V - Minimum breakdown voltage at 1 mA test current; ensures reliable turn-on above nominal rail. |
| VC @ IPP | 7.3 V at 50 A (10/1000 μs) - Clamping voltage during standard lightning surge; determines protected circuit's maximum stress level. |
| PPPM | 600 W - Peak pulse power handling capacity; defines survivability under defined transient waveforms. |
| CJ | 5200 pF at 0 V, 1 MHz - Junction capacitance; impacts high-frequency signal integrity on protected lines. |
| TJ max | +175 °C - Maximum junction temperature; enables operation in under-hood automotive environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient on recommended PCB layout; guides heatsinking and power derating. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode indicated by color band. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated, solderable per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when voltage exceeds VBR. |
| Anode | Reference/ground return | Typically tied to system ground or low-impedance return path; completes clamping loop during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces. |
| Halogen-free & RoHS-compliant (HM3) | Meets global environmental compliance requirements without compromising surge robustness or thermal performance. |
| MSL Level 1 (260 °C) | Enables single-pass lead-free reflow without moisture-induced damage or popcorn effect. |
| Low clamping ratio (VC/VBR ≈ 1.78) | Delivers tight voltage limiting relative to breakdown, minimizing stress on downstream 3.3 V logic components. |
| Junction-to-lead thermal resistance (RθJL = 20 °C/W) | Supports localized heat dissipation into PCB copper pads, improving pulse-to-pulse recovery in repetitive surge scenarios. |
Applications
| Automotive Sensor Protection | Industrial I/O Protection |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) in vehicle ECUs exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground to clamp transients before they reach the transceiver input stage. Use Value: Prevents latch-up or permanent damage to 3.3 V interface ICs while maintaining signal fidelity due to controlled 5200 pF capacitance. | Use Scenario: Safeguarding PLC digital input modules connected to 24 V industrial field wiring subject to inductive kickback and EFT bursts. IC Role / Device Role / Timing Role: Standoff protection device on 3.3 V logic-level optocoupler inputs, shunting surges away from isolation barrier. Use Value: Enables reliable operation in harsh factory environments with 600 W surge handling and -65 °C to +175 °C operational range. |
| Power Rail Clamp | USB/Serial Interface Protection |
Use Scenario: Secondary overvoltage clamp on 3.3 V microcontroller supply rail downstream of DC-DC converter, catching residual transients missed by bulk filtering. IC Role / Device Role / Timing Role: Fast-acting shunt element that activates within picoseconds to limit rail excursion during fast-edge transients. Use Value: Maintains MCU reset integrity and prevents brown-out resets by holding rail voltage ≤7.3 V during 50 A surges. | Use Scenario: Protecting UART, SPI, or USB 2.0 D+/D- lines in embedded gateways and edge devices connected to external peripherals. IC Role / Device Role / Timing Role: Low-capacitance (5200 pF) unidirectional clamp on bidirectional data lines referenced to 3.3 V supply. Use Value: Preserves signal rise/fall times while meeting IEC 61000-4-2 Level 4 (±15 kV air/±8 kV contact) ESD immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ3V3HE3/H | Same electrical specs and package; RoHS-compliant but not halogen-free; lacks HM3 environmental designation. | Approved for commercial and automotive use, but not certified halogen-free for strict eco-regulations (e.g., JEITA EG-8). | Select when halogen-free content is not mandated and cost optimization is prioritized. |
| SMCJ3V3A-M3/86A | Higher power rating (1500 W), larger SMC (DO-214AB) package, lower RθJA (50 °C/W), bidirectional variant. | Used where higher surge margin or bidirectional protection (e.g., AC-coupled lines) is required; incompatible footprint. | Choose only if board redesign accommodates larger SMC package and bidirectional clamping is needed. |
Compared with SMBJ3V3HM3/H, SMBJ3V3HE3/H offers identical protection performance without halogen-free assurance, while SMCJ3V3A-M3/86A delivers greater surge capacity in a physically incompatible package - making SMBJ3V3HM3/H optimal for space-constrained, halogen-free automotive 3.3 V rail protection.
Availability
SMBJ3V3HM3/H is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O modules, and 3.3 V microcontroller power rail protection requiring stable component supply and long-term lifecycle support.
Supply support for SMBJ3V3HM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMBJ series was engineered specifically for high-reliability transient suppression in automotive and industrial systems, balancing low clamping voltage, robust surge handling, and AEC-Q101-compliant construction for mission-critical 3.3 V electronics.
FAQ
What is the clamping voltage of SMBJ3V3HM3/H at 50 A?
The SMBJ3V3HM3/H has a maximum clamping voltage (VC) of 7.3 V at 50 A using the 10/1000 μs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on the protected circuit during a typical lightning surge event. The SMBJ3V3HM3/H maintains this clamping performance across its qualified temperature range and is validated per AEC-Q101 for automotive use.
Is SMBJ3V3HM3/H halogen-free and RoHS-compliant?
Yes, SMBJ3V3HM3/H is both halogen-free and RoHS-compliant, as confirmed by its HM3 suffix per Vishay's ordering nomenclature. It meets JEDEC JESD201 Class 2 whisker resistance and UL 94 V-0 flammability requirements. The molding compound contains no brominated flame retardants or chlorine-based additives, satisfying strict environmental mandates for automotive and industrial deployments.
Does SMBJ3V3HM3/H meet AEC-Q101 qualification?
Yes, SMBJ3V3HM3/H is AEC-Q101 qualified, as explicitly stated in the Vishay datasheet revision 14-Apr-2023 (Document Number: 88940). This qualification covers stress tests including HTGB, HTRB, TST, and mechanical shock, validating its suitability for automotive electronic control units, body electronics, and ADAS sensor modules where reliability under thermal and vibration stress is mandatory.
What is the junction capacitance of SMBJ3V3HM3/H and how does it affect signal lines?
The SMBJ3V3HM3/H exhibits a typical junction capacitance (CJ) of 5200 pF at 0 V and 1 MHz. While high for RF applications, this value is appropriate for protecting low-speed digital and analog signals (e.g., UART, LIN, sensor analog outputs) where bandwidth is below ~100 kHz. For such use cases, the SMBJ3V3HM3/H provides effective clamping without excessive signal distortion or timing skew.
What is the thermal resistance and maximum junction temperature of SMBJ3V3HM3/H?
The SMBJ3V3HM3/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the recommended 0.2" × 0.2" copper pads, and a maximum junction temperature (TJ max) of +175 °C. These values enable reliable operation in under-hood automotive environments and high-temperature industrial enclosures, provided PCB layout adheres to Vishay's pad recommendations for thermal management.
SMBJ3V3HM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V
- Voltage - Breakdown (Min):
- 4.1V
- Voltage - Clamping (Max) @ Ipp:
- 7.3V
- Current - Peak Pulse (10/1000µs):
- 50A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 5200pF @ 1MHz
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ3V3HM3/H FAQ
1.How can I place an order for SMBJ3V3HM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ3V3HM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ3V3HM3/H reliable?
The price and inventory of SMBJ3V3HM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ3V3HM3/H is usually 5 days.
3.What payment methods are accepted for SMBJ3V3HM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ3V3HM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ3V3HM3/H?
SMBJ3V3HM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ3V3HM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ3V3HM3/H?
For technical support, including SMBJ3V3HM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ3V3HM3/H requirements.
6.How does Aetrix verify that SMBJ3V3HM3/H is sourced from the original manufacturer or authorized distributors?
All SMBJ3V3HM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ3V3HM3/H meets industry standards.
7.What is the process for return or replacement of SMBJ3V3HM3/H?
All SMBJ3V3HM3/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ3V3HM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ3V3HM3/H part is unused and in its original packaging.
Return procedure for SMBJ3V3HM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ3V3HM3/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
