Vishay General Semiconductor - Diodes Division SMBJ40A-M3/5B
- Part No.:
- SMBJ40A-M3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ40A-M3/5B.pdf
- Description:
- TVS DIODE 40VWM 64.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:8,339
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ40A-M3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features a 40 V stand-off voltage (VWM), 44.4–49.1 V breakdown voltage (VBR) at 1 mA, 64.5 V maximum clamping voltage (VC) at 9.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, microcontrollers, and sensor interfaces in industrial power supplies and telecom line cards.
For engineers reviewing the SMBJ40A-M3/5B datasheet, SMBJ40A-M3/5B pinout, SMBJ40A-M3/5B application, or SMBJ40A-M3/5B equivalent, key selection criteria include unidirectional polarity, 1.0 µA max reverse leakage at VWM, -55 °C to +150 °C operating junction temperature, halogen-free RoHS compliance (M3 suffix), and compatibility with automated SMT placement on standard PCB pad layouts.
Technical Context
This TVS diode operates as a voltage-clamping protection device: under normal conditions it presents high impedance (>1 GΩ) below VWM = 40 V, then rapidly transitions to low-impedance conduction when transient voltage exceeds VBR (min 44.4 V). Its glass-passivated junction ensures stable avalanche characteristics and fast response time (<1 ns).
The SMBJ40A-M3/5B is rated for 600 W peak pulse power (10/1000 µs), 100 A non-repetitive forward surge current (8.3 ms half-sine), and exhibits 0.101 %/°C temperature coefficient of VBR. Thermal resistance is 100 °C/W junction-to-ambient (on 5.0 mm × 5.0 mm copper pads), supporting reliable operation in compact, thermally constrained designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin for 36–40 V DC rails. |
| VBR (min/max) | 44.4 V / 49.1 V at IT = 1 mA - Ensures consistent avalanche initiation across production lot; critical for predictable clamping threshold. |
| VC @ IPPM | 64.5 V at 9.3 A - Clamped voltage during 600 W transient; limits downstream IC stress to safe levels under worst-case surge. |
| IPPM | 9.3 A - Peak pulse current capability with 10/1000 µs waveform; determines survivability against IEC 61000-4-5 Level 4 surges. |
| PPPM | 600 W - Peak pulse power handling; enables robust protection without derating in typical 1–2 cm² PCB copper area layouts. |
| TJ range | -55 °C to +150 °C - Supports operation in automotive under-hood, industrial motor drives, and outdoor telecom enclosures. |
| Leakage @ VWM | ≤1.0 µA - Minimizes standby power loss and avoids false triggering in high-impedance sensor bias networks. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant (M3 suffix), matte tin-plated leads, MSL Level 1 (260 °C reflow peak), polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-voltage reference; completes clamping path during overvoltage events. |
| Cathode | High-side connection point | Connected to protected line (e.g., 40 V rail or signal trace); blocks reverse current until VBR exceeded. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against IEC 61000-4-5 surge test Level 4 (4 kV/2 Ω) on 40 V systems without external series impedance. |
| Glass passivated junction | Ensures stable, repeatable avalanche characteristics over 1000+ surge events and lifetime temperature cycling. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (e.g., ESD >15 kV), improving clamping precision. |
| MSL Level 1 moisture sensitivity | Eliminates bake-out requirement prior to reflow; supports direct placement into high-volume SMT lines without dry pack handling. |
| Halogen-free, RoHS-compliant (M3) | Meets IPC-1752A material declaration requirements for green electronics manufacturing and end-of-life recycling. |
Applications
| Industrial Motor Drive Power Supply | Telecom Line Card Protection |
|---|---|
|
Use Scenario: Suppresses inductive kickback from relay coils and gate drivers in 48 V DC bus sections. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed across MOSFET drain-source or relay coil terminals. Use Value: Limits transient voltage to ≤64.5 V, preventing gate oxide rupture in 60 V-rated power MOSFETs and ensuring system-level IEC 61000-4-4 compliance. |
Use Scenario: Protects Ethernet PHY interface and PoE controller ICs from lightning-induced surges on RJ45 ports. IC Role / Device Role / Timing Role: Primary-level TVS on differential pairs (e.g., TX+/TX−) referenced to chassis ground. Use Value: Clamps 10/1000 µs surges up to 600 W while maintaining <1.0 µA leakage at 40 V, avoiding signal integrity degradation in 100BASE-TX links. |
| Automotive Body Control Module (BCM) | Consumer Appliance Mainboard |
|
Use Scenario: Shields LIN bus transceivers and microcontroller I/O pins from load dump and jump-start transients in 12 V systems. IC Role / Device Role / Timing Role: Secondary protection stage after upstream fuse and PTC, placed adjacent to protected IC. Use Value: Withstands 150 °C junction temperature and meets AEC-Q101 qualification (via HM3 variant), enabling under-hood deployment. |
Use Scenario: Guards AC-DC converter output rails and microcontroller reset lines against ESD and capacitor discharge events. IC Role / Device Role / Timing Role: Standoff-rated TVS on 3.3 V, 5 V, and 40 V auxiliary rails feeding MCU, display, and motor drivers. Use Value: 40 V VWM provides 20 % margin above nominal 33 V rail, while 64.5 V VC ensures safe headroom for 75 V surge immunity per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ40A-E3/5B | Same electrical specs; RoHS-compliant but contains brominated flame retardants (non-halogen-free). | Acceptable for commercial-grade products where halogen-free mandate does not apply. | Select when cost sensitivity outweighs halogen-free requirement and AEC-Q101 is not needed. |
| SMBJ40CA-M3/5B | Bidirectional version; symmetric VBR = 44.4–49.1 V, same VC = 64.5 V, but no polarity marking. | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN FD) where reverse polarity surges occur. | Choose only if bidirectional clamping is explicitly required; unidirectional SMBJ40A-M3/5B is optimal for DC rails. |
Compared with SMBJ40A-E3/5B, the M3 variant adds halogen-free compliance without performance trade-offs; compared with SMBJ40CA-M3/5B, the unidirectional configuration offers tighter leakage control and simpler layout integration on grounded DC systems.
Availability
SMBJ40A-M3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom line cards, automotive body control modules, and consumer appliance mainboards requiring stable component supply and halogen-free compliance.
Supply support for SMBJ40A-M3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, power efficiency, and AEC-Q qualified solutions.
The SMBJ series was developed for high-energy transient suppression in space-constrained surface-mount applications, targeting industrial automation, automotive electronics, and communications infrastructure where robustness and repeatability are critical.
FAQ
What is the maximum clamping voltage of SMBJ40A-M3/5B under a 600 W transient?
The SMBJ40A-M3/5B has a maximum clamping voltage (VC) of 64.5 V at 9.3 A peak pulse current, measured with a 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and ensures downstream components see no more than 64.5 V during standardized surge events. The SMBJ40A-M3/5B maintains this clamping performance due to its low incremental surge resistance and stable avalanche junction.
Is SMBJ40A-M3/5B suitable for automotive applications?
The SMBJ40A-M3/5B itself is commercial-grade (M3 suffix), but Vishay offers the AEC-Q101 qualified variant SMBJ40A-HM3/5B with identical electrical specs and halogen-free construction. For automotive use, specify the HM3 suffix; the SMBJ40A-M3/5B is appropriate for non-automotive industrial and telecom applications where AEC-Q101 is not mandated.
How does the M3 suffix differ from E3 in SMBJ40A-M3/5B?
The M3 suffix denotes halogen-free, RoHS-compliant construction using bromine-free flame retardants in the molding compound, whereas E3 uses RoHS-compliant materials that may contain halogens. Both meet JEDEC J-STD-020 MSL Level 1 and have identical electrical ratings. The SMBJ40A-M3/5B satisfies strict environmental mandates like IPC-1752A and EU RoHS Annex II updates requiring halogen-free content.
What is the thermal resistance of SMBJ40A-M3/5B, and how does it affect PCB layout?
The SMBJ40A-M3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C at full 5.0 W steady-state dissipation, designers must provide adequate copper area and avoid excessive ambient temperature. The SMBJ40A-M3/5B's low RθJL = 20 °C/W also supports localized heat sinking via thermal vias to inner layers.
Can SMBJ40A-M3/5B be used in bidirectional signal protection?
No - SMBJ40A-M3/5B is unidirectional and conducts only when cathode voltage exceeds anode by ≥VBR. For bidirectional protection (e.g., AC lines, differential buses), use SMBJ40CA-M3/5B, which has symmetric breakdown in both polarities. Using SMBJ40A-M3/5B on bidirectional signals risks forward conduction during negative transients, potentially damaging the device or circuit. Always match polarity to system grounding architecture.
SMBJ40A-M3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.4V
- Voltage - Clamping (Max) @ Ipp:
- 64.5V
- Current - Peak Pulse (10/1000µs):
- 9.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ40A-M3/5B FAQ
1.How can I place an order for SMBJ40A-M3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ40A-M3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ40A-M3/5B reliable?
The price and inventory of SMBJ40A-M3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ40A-M3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ40A-M3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ40A-M3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ40A-M3/5B?
SMBJ40A-M3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ40A-M3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ40A-M3/5B?
For technical support, including SMBJ40A-M3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ40A-M3/5B requirements.
6.How does Aetrix verify that SMBJ40A-M3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ40A-M3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ40A-M3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ40A-M3/5B?
All SMBJ40A-M3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ40A-M3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ40A-M3/5B part is unused and in its original packaging.
Return procedure for SMBJ40A-M3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ40A-M3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)