Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ43AHE3_A/I

Part No.:
SMBJ43AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ43AHE3_A/I.pdf
Description:
TVS DIODE 43VWM 69.4VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,732

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ43AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 43 V stand-off voltage (VWM), 47.8–52.8 V breakdown voltage (VBR) at 1 mA, 69.4 V maximum clamping voltage (VC) at 8.6 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive ECUs, industrial sensor interfaces, and telecom power supplies.

For engineers reviewing the SMBJ43AHE3_A/I datasheet, SMBJ43AHE3_A/I pinout, SMBJ43AHE3_A/I application, or SMBJ43AHE3_A/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and RoHS-compliant packaging details critical for ESD/surge protection design-in and long-term reliability validation.

Technical Context

This TVS diode operates as a unidirectional clamping device: reverse-biased during normal operation (blocking up to 43 V), then avalanche-conducting within nanoseconds when transients exceed VBR. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and low incremental surge resistance, enabling precise voltage limiting without degradation under repetitive surges.

The SMBJ43AHE3_A/I is AEC-Q101 qualified and rated for automotive-grade reliability, with MSL Level 1 moisture sensitivity, matte tin-plated leads compliant with J-STD-002/JESD 22-B102, and halogen-free RoHS compliance per Vishay HM3/HE3 suffix conventions - confirming suitability for under-hood and ADAS subsystems requiring high-temperature stability and solderability assurance.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 43 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 48 V systems.
VBR (min/max) 47.8 V / 52.8 V at IT = 1 mA - Confirmed avalanche onset range; ensures predictable turn-on across temperature and unit variation.
VC @ IPPM 69.4 V at 8.6 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to <70 V in 48 V supply protection.
PPPM 600 W - Peak pulse power handling capability; supports IEC 61000-4-5 Level 4 (4 kV) surge immunity with proper PCB layout.
IFSM 100 A - Non-repetitive forward surge rating (8.3 ms half-sine); enables protection against load-dump transients in automotive 12/24 V systems.
TJ max. +150 °C - Maximum junction temperature; allows operation in engine control modules and industrial motor drives with elevated ambient.
RθJA 100 °C/W - Thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs heatsinking requirements for sustained power dissipation.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H). Matte tin-plated leads, MSL Level 1, compatible with lead-free reflow (peak 260 °C).

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / low-side reference Connected to ground or lower-potential node; establishes reference for unidirectional clamping action.
Cathode Reverse-biased terminal / protected line connection Connected to the line being protected (e.g., 48 V rail); avalanche conduction occurs between cathode and anode during overvoltage.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control, body electronics, and ADAS sensors - ensures reliability under thermal cycling, vibration, and humidity stress.
600 W peak pulse power (10/1000 µs) Withstands IEC 61000-4-5 surge test profiles up to Level 4 without degradation; eliminates need for external series impedance in many 48 V system designs.
Glass-passivated junction Provides stable VBR tolerance (±5%), low leakage (<1.0 µA), and long-term parameter consistency - critical for battery-powered and always-on systems.
MSL Level 1, 260 °C peak reflow Enables single-pass lead-free assembly without moisture-related popcorning; eliminates pre-bake requirement in high-volume SMT lines.
RoHS-compliant & halogen-free (HE3 suffix) Fulfills EU RoHS Directive 2011/65/EU and JEDEC JS709C material restrictions; supports sustainability compliance for global OEM BOMs.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 48 V DC power input to vehicle infotainment head units against load dump and ISO 7637-2 pulses.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between 48 V rail and chassis ground, conducting only during overvoltage events.

Use Value: Limits transient voltage to ≤69.4 V, preventing damage to downstream DC/DC converters and microcontrollers rated for 75 V absolute maximum.

Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) of pressure sensors in factory automation PLCs from EFT and surge coupling.

IC Role / Device Role / Timing Role: Low-capacitance (typ. 100 pF at 0 V) unidirectional clamp on signal line referenced to local ground.

Use Value: Maintains signal integrity below 1 MHz while suppressing >1 kV transients - no added filtering delay or distortion in process-critical feedback paths.

Telecom DC Power Input Protection Motor Drive Control Signal Protection

Use Scenario: Safeguarding –48 V telecom rectifier outputs from lightning-induced surges on central office distribution boards.

IC Role / Device Role / Timing Role: Cathode tied to –48 V rail, anode to ground; clamps positive-going transients relative to negative supply reference.

Use Value: Withstands 600 W surges without derating at 70 °C ambient - meets Telcordia GR-1089-CORE Class III requirements for outdoor cabinet installations.

Use Scenario: Protecting isolated gate drive signals (e.g., PWM inputs to SiC MOSFET drivers) in servo amplifiers from cross-talk and inductive kickback.

IC Role / Device Role / Timing Role: Fast-response (sub-nanosecond) unidirectional clamp on logic-level control line referenced to driver ground.

Use Value: Prevents false triggering or latch-up in gate drivers by limiting transients to <70 V while adding <0.5 ns propagation delay - preserves timing margins in 100 kHz+ switching systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ43AHM3_A/I Halogen-free variant with identical VWM, VBR, VC, and PPPM; same AEC-Q101 qualification and SMB package. No functional difference; selected where halogen-free compliance is mandated by end-equipment environmental policy (e.g., EU WEEE, Japanese JIS C 0950). Choose SMBJ43AHM3_A/I if halogen-free materials are required; otherwise SMBJ43AHE3_A/I satisfies standard RoHS needs.
SMAJ43AHE3/A Same electrical specs but in smaller SMA (DO-214AC) package; RθJA = 140 °C/W vs. 100 °C/W; lower IPPM (7.5 A) and VC (70.1 V). Limited to lower-power or space-constrained applications where 600 W surge margin is not required; unsuitable for automotive load-dump duty cycles. Select SMBJ43AHE3_A/I for higher thermal performance and full 600 W rating; use SMAJ43AHE3/A only when board area is critical and surge energy is ≤500 W.

Compared with SMBJ43AHM3_A/I, the SMBJ43AHE3_A/I offers identical protection performance with standard RoHS compliance, while the SMAJ43AHE3/A trades thermal robustness and surge margin for reduced footprint - making SMBJ43AHE3_A/I optimal for automotive and industrial applications demanding full-rated 600 W clamping and AEC-Q101 assurance.

Availability

SMBJ43AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor signal conditioning, and telecom DC power input stages requiring stable component supply, AEC-Q101 qualification, and long-lifecycle availability.

Supply support for SMBJ43AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in automotive, industrial, and communications infrastructure - delivering consistent clamping, low leakage, and AEC-Q101 validated ruggedness.

FAQ

What is the clamping voltage of SMBJ43AHE3_A/I at its rated peak pulse current?

The SMBJ43AHE3_A/I has a maximum clamping voltage (VC) of 69.4 V at its rated peak pulse current (IPPM) of 8.6 A, measured using the standardized 10/1000 µs double-exponential surge waveform. This value is guaranteed across the full operating temperature range and ensures downstream circuitry remains within safe voltage limits during transient events. The SMBJ43AHE3_A/I maintains this clamping performance with minimal degradation over its lifetime when operated within datasheet limits.

Is SMBJ43AHE3_A/I qualified for automotive applications?

Yes, SMBJ43AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in the SMBJ5.0A–SMBJ188A datasheet (Rev. 09-Jan-2024, Doc. #88392). This qualification covers stress tests including temperature cycling, humidity bias, mechanical shock, and high-temperature operating life - validating its use in engine control modules, body electronics, and ADAS systems. The SMBJ43AHE3_A/I meets all requirements for automotive-grade transient suppression without derating.

What is the standoff voltage and breakdown voltage range for SMBJ43AHE3_A/I?

The SMBJ43AHE3_A/I has a reverse stand-off voltage (VWM) of 43 V and a minimum/maximum breakdown voltage (VBR) of 47.8 V / 52.8 V at test current IT = 1 mA. This 5 V margin between VWM and VBR(min) provides reliable blocking during normal operation while ensuring rapid, repeatable avalanche conduction during overvoltage events. These parameters are fully characterized and guaranteed per Vishay's production testing for every SMBJ43AHE3_A/I lot.

Does SMBJ43AHE3_A/I have a bidirectional version?

No - SMBJ43AHE3_A/I is strictly unidirectional, indicated by the "A" suffix and cathode band marking. For bidirectional operation, Vishay offers the SMBJ43CA series (e.g., SMBJ43CAHE3_A/I), which provides symmetrical clamping in both polarities with identical VWM and VC ratings. The SMBJ43AHE3_A/I must be oriented with cathode toward the protected line and anode to ground; reversing polarity will result in forward conduction and failure.

What is the thermal resistance and maximum junction temperature of SMBJ43AHE3_A/I?

The SMBJ43AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads per JEDEC standards, and a maximum junction temperature (TJ) of +150 °C. This allows continuous operation in environments up to +125 °C ambient when power dissipation remains below 2.5 W - sufficient for most surge-protection duty cycles. The SMBJ43AHE3_A/I's thermal performance is validated across its full AEC-Q101 qualification profile.

SMBJ43AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
43V
Voltage - Breakdown (Min):
47.8V
Voltage - Clamping (Max) @ Ipp:
69.4V
Current - Peak Pulse (10/1000µs):
8.6A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ43AHE3_A/I FAQ

1.How can I place an order for SMBJ43AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ43AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ43AHE3_A/I reliable?

The price and inventory of SMBJ43AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ43AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SMBJ43AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ43AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ43AHE3_A/I?

SMBJ43AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ43AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ43AHE3_A/I?

For technical support, including SMBJ43AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ43AHE3_A/I requirements.

6.How does Aetrix verify that SMBJ43AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SMBJ43AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ43AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SMBJ43AHE3_A/I?

All SMBJ43AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ43AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ43AHE3_A/I part is unused and in its original packaging.

Return procedure for SMBJ43AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ43AHE3_A/I Tags

  • SMBJ43AHE3_A/I
  • SMBJ43AHE3_A/I PDF
  • SMBJ43AHE3_A/I Datasheet
  • SMBJ43AHE3_A/I Specifications
  • SMBJ43AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ43AHE3_A/I
  • Buy SMBJ43AHE3_A/I
  • SMBJ43AHE3_A/I Price
  • SMBJ43AHE3_A/I Distributor
  • SMBJ43AHE3_A/I Supplier
  • SMBJ43AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER