Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ45AHE3_B/H

Part No.:
SMBJ45AHE3_B/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ45AHE3_B/H.pdf
Description:
600W,45V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,213

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ45AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 45 V stand-off voltage (VWM), 50.0–55.3 V breakdown voltage (VBR) at 1 mA, 72.7 V maximum clamping voltage (VC) at 8.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.

For engineers reviewing the SMBJ45AHE3_B/H datasheet, SMBJ45AHE3_B/H pinout, SMBJ45AHE3_B/H application, or SMBJ45AHE3_B/H equivalent, this part is selected for robust overvoltage protection where fast response (<1 ps), low clamping ratio (VC/VBR ≈ 1.45), AEC-Q101 qualification, and RoHS-compliant matte tin terminations are required in automotive and industrial designs.

Technical Context

This TVS diode operates as a unidirectional avalanche clamp, leveraging a glass-passivated silicon junction to achieve sub-nanosecond response and stable breakdown under repetitive surge conditions. Its thermal resistance (RθJA = 100 °C/W) and junction temperature range (–55 °C to +150 °C) support operation in high-ambient environments when mounted on 5.0 mm × 5.0 mm copper pads.

The device complies with ANSI/IEEE C62.35 for surge protection and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. The cathode band marking identifies polarity, and its 1.0 µA max reverse leakage at VWM ensures minimal standby power loss in always-on circuits.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 45 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin for 36–42 V nominal systems.
VBR min/max 50.0 V / 55.3 V at IT = 1 mA - Confirmed breakdown window ensures predictable turn-on across production lots and temperature.
VC @ IPPM 72.7 V at 8.3 A - Clamping voltage during 10/1000 µs surge; limits downstream voltage stress to <73 V under worst-case 600 W transient.
PPPM 600 W - Peak pulse power handling capability with 0.01% duty cycle; supports repeated lightning/surge events per IEC 61000-4-5.
IFSM 100 A - Non-repetitive forward surge rating (8.3 ms half-sine); enables protection against inductive switch-off spikes in DC motor drives.
Junction Temp –55 °C to +150 °C - Full operational range allows deployment in under-hood automotive or industrial control cabinets without derating.
Leakage @ VWM 1.0 µA max - Ultra-low reverse current preserves battery life and avoids false triggering in low-power sensor nodes.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by molded band.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / Surge return path Connected to ground or low-impedance return plane; carries full surge current during clamping event.
Cathode Protected line connection / Clamp reference Connected to line being protected (e.g., 48 V rail); voltage referenced to anode during avalanche conduction.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and body electronics requiring reliability under thermal cycling and vibration.
600 W peak pulse power Withstands IEC 61000-4-5 Level 4 surges (4 kV line-to-line) without degradation when properly mounted on recommended copper pads.
Low clamping ratio (VC/VBR ≈ 1.45) Minimizes overvoltage overshoot during fast transients, reducing risk of gate oxide damage in protected MOSFETs and ICs.
MSL Level 1 moisture sensitivity Enables standard SMT reflow without baking; compatible with high-volume automated assembly lines using 260 °C peak profile.
Glass passivated junction Ensures long-term stability of VBR and leakage performance across humidity, temperature, and lifetime stress tests.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 48 V battery-fed ECUs from load dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between supply rail and chassis ground to shunt >100 V spikes within nanoseconds.

Use Value: Limits voltage seen by downstream PMICs and microcontrollers to ≤72.7 V, preventing latch-up or permanent damage during ISO 16750-2 pulses.

Use Scenario: Safeguarding analog front-end inputs of pressure/temperature sensors in factory automation PLCs.

IC Role / Device Role / Timing Role: Low-capacitance TVS connected across differential signal pair (e.g., RS-485 bus) to absorb ESD and EFT bursts.

Use Value: Maintains signal integrity with <1.0 µA leakage at 45 V, avoiding DC offset errors while clamping ±15 kV contact ESD per IEC 61000-4-2.

DC Motor Drive Output Stage Telecom Power Supply Input

Use Scenario: Suppressing inductive kickback from brushed DC motors in robotic actuators.

IC Role / Device Role / Timing Role: Mounted across H-bridge output terminals to clamp flyback voltage during PWM switching transitions.

Use Value: Handles 100 A single-half-sine surge (IFSM) without failure, enabling reliable operation in 24–48 V motor control systems.

Use Scenario: Front-end protection for AC/DC converters in telecom base station power modules.

IC Role / Device Role / Timing Role: Primary surge suppression stage before input rectifier and bulk capacitor, rated for repeated 600 W transients.

Use Value: Provides 600 W peak pulse power handling with 100 °C/W thermal resistance, enabling compact layout without heatsinking in 19" rack power supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ45AHM3_B/H Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. No functional difference; selected where halogen-free compliance is mandated by OEM environmental policy. Direct material substitution when halogen-free bill-of-materials is required; same footprint and thermal behavior.
SMCJ45AHE3_A/H Same VWM, VBR, and VC, but in larger SMC (DO-214AB) package with 1500 W PPPM rating. Used where higher surge energy absorption is needed (e.g., outdoor telecom equipment), accepting larger PCB area. Choose when system-level surge testing exceeds 600 W; requires PCB layout change due to larger 7.11 mm × 6.22 mm footprint.

Compared with SMBJ45AHE3_B/H, the HM3 variant offers identical protection performance with halogen-free construction, while the SMCJ45AHE3_A/H delivers 2.5× higher surge energy capacity at the cost of increased board space and thermal mass - enabling trade-offs between density and ruggedness in final design.

Availability

SMBJ45AHE3_B/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, DC motor drives, and telecom power supplies requiring stable component supply with AEC-Q101 assurance and RoHS compliance.

Supply support for SMBJ45AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series is engineered for high-speed transient suppression in automotive, industrial, and communications systems - delivering consistent clamping performance, AEC-Q101 validation, and robust packaging for harsh-environment deployment.

FAQ

What is the breakdown voltage tolerance for SMBJ45AHE3_B/H?

The SMBJ45AHE3_B/H has a specified breakdown voltage (VBR) range of 50.0 V to 55.3 V at test current IT = 1 mA, per Vishay Document 88392 Rev. 09-Jan-2024. This ±5.5% tolerance ensures reliable turn-on across manufacturing lots and temperature extremes, critical for consistent overvoltage protection in safety-critical systems.

Is SMBJ45AHE3_B/H suitable for bidirectional signal line protection?

No - SMBJ45AHE3_B/H is a unidirectional TVS diode, marked with a cathode band and intended for DC rail or polarized signal protection. For bidirectional applications such as AC lines or differential buses, use the CA-suffix variant (e.g., SMBJ45CA) which provides symmetrical clamping in both directions.

Does SMBJ45AHE3_B/H require a heatsink in typical applications?

No external heatsink is required for SMBJ45AHE3_B/H under standard surge conditions. Its RθJA = 100 °C/W assumes mounting on 5.0 mm × 5.0 mm copper pads per datasheet Fig. 2. Continuous power dissipation is limited to 5.0 W; thermal design focuses on PCB copper area rather than added heatsinking.

What is the surge current rating of SMBJ45AHE3_B/H at 10/1000 µs waveform?

At the standardized 10/1000 µs double-exponential surge waveform, SMBJ45AHE3_B/H delivers 8.3 A peak pulse current (IPPM) corresponding to its 600 W peak pulse power rating. This value is confirmed in the Electrical Characteristics table of Vishay Document 88392 and applies at TA = 25 °C with proper PCB layout.

How does the AEC-Q101 qualification impact SMBJ45AHE3_B/H usage in automotive designs?

The AEC-Q101 qualification of SMBJ45AHE3_B/H validates its reliability for automotive applications including powertrain, chassis, and body electronics. It confirms passing stress tests for temperature cycling, humidity, mechanical shock, and surge endurance - enabling direct use in production ECUs without additional qualification effort by the system integrator.

SMBJ45AHE3_B/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
45V
Voltage - Breakdown (Min):
50V
Voltage - Clamping (Max) @ Ipp:
72.7V
Current - Peak Pulse (10/1000µs):
8.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ45AHE3_B/H FAQ

1.How can I place an order for SMBJ45AHE3_B/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ45AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ45AHE3_B/H reliable?

The price and inventory of SMBJ45AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ45AHE3_B/H is usually 5 days.

3.What payment methods are accepted for SMBJ45AHE3_B/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ45AHE3_B/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ45AHE3_B/H?

SMBJ45AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ45AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ45AHE3_B/H?

For technical support, including SMBJ45AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ45AHE3_B/H requirements.

6.How does Aetrix verify that SMBJ45AHE3_B/H is sourced from the original manufacturer or authorized distributors?

All SMBJ45AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ45AHE3_B/H meets industry standards.

7.What is the process for return or replacement of SMBJ45AHE3_B/H?

All SMBJ45AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ45AHE3_B/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ45AHE3_B/H part is unused and in its original packaging.

Return procedure for SMBJ45AHE3_B/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ45AHE3_B/H Tags

  • SMBJ45AHE3_B/H
  • SMBJ45AHE3_B/H PDF
  • SMBJ45AHE3_B/H Datasheet
  • SMBJ45AHE3_B/H Specifications
  • SMBJ45AHE3_B/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ45AHE3_B/H
  • Buy SMBJ45AHE3_B/H
  • SMBJ45AHE3_B/H Price
  • SMBJ45AHE3_B/H Distributor
  • SMBJ45AHE3_B/H Supplier
  • SMBJ45AHE3_B/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER