My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ45AHE3_B/I
- Part No.:
- SMBJ45AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ45AHE3_B/I.pdf
- Description:
- 600W,45V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,455
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ45AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 45 V stand-off voltage (VWM), 50.0–55.3 V breakdown voltage (VBR) at 1 mA, 72.7 V maximum clamping voltage (VC) at 8.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power electronics, industrial sensor interfaces, and telecom line protection.
For engineers reviewing the SMBJ45AHE3_B/I datasheet, SMBJ45AHE3_B/I pinout, SMBJ45AHE3_B/I application, or SMBJ45AHE3_B/I equivalent, key selection criteria include clamping performance under 8.3 A surge, AEC-Q101 qualification status, unidirectional polarity, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR (50.0–55.3 V), it avalanches to divert transient energy away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable leakage (<1.0 µA at 45 V) and fast response time (<1 ns), critical for suppressing ESD and inductive switching spikes.
The device is rated for 150 °C max junction temperature and meets MSL Level 1 per J-STD-020 (260 °C peak reflow). The HE3 suffix confirms RoHS-compliance and AEC-Q101 qualification - validated for automotive-grade reliability in engine control units, body electronics, and ADAS sensor power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 45 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin for 48 V systems. |
| VBR (min/max) | 50.0 V / 55.3 V at 1 mA - Ensures reliable turn-on within tight tolerance; guarantees clamping initiates before damage threshold of protected 48 V logic. |
| VC @ IPPM | 72.7 V at 8.3 A - Clamped voltage during 10/1000 µs surge; limits stress on downstream 75 V-rated components. |
| PPPM | 600 W - Peak pulse power handling capability; sustains repetitive transients up to 0.01% duty cycle without degradation. |
| ID @ VWM | ≤1.0 µA - Ultra-low reverse leakage preserves battery life and signal integrity in always-on automotive modules. |
| TJ max. | 150 °C - Enables operation in under-hood environments; supports derating curves for sustained 125 °C ambient designs. |
| RθJA | 100 °C/W - Thermal resistance with standard 0.2" × 0.2" copper pads; informs heatsinking requirements for high-duty-cycle surge events. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts avalanche current to ground during overvoltage event. |
| Anode (unbanded end) | Reference/return path | Typically tied to system ground or low-impedance return plane; completes clamping current path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, infotainment, and ADAS; supports 150 °C operation and humidity testing. |
| 600 W peak pulse power (10/1000 µs) | Withstands repeated load-dump and ISO 7637-2 Pulse 5a surges without parametric shift or failure. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage across temperature (-55 °C to +150 °C) and lifetime cycling. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles; no moisture sensitivity handling required pre-assembly. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ESD >15 kV), improving protection margin for sensitive receivers. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 48 V battery-fed ECUs against load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between power rail and chassis ground. Use Value: Limits transient voltage to ≤72.7 V, safeguarding 75 V-rated DC-DC controllers and CAN transceivers. |
Use Scenario: Shielding analog output lines of pressure/temperature sensors in factory automation. IC Role / Device Role / Timing Role: Low-leakage (≤1.0 µA) TVS on 4–20 mA loop outputs exposed to motor drive noise. Use Value: Prevents sensor offset drift and ADC saturation during 1 kV EFT bursts without affecting baseline accuracy. |
| Telecom Line Surge Suppression | Consumer Power Adapter Input Protection |
|
Use Scenario: Front-end protection of PoE-powered Ethernet switches against lightning-induced surges. IC Role / Device Role / Timing Role: Primary clamping device on 48 V DC input bus prior to DC-DC conversion stage. Use Value: Absorbs 600 W surges while maintaining <1.0 µA leakage - avoids standby power waste in always-on networking gear. |
Use Scenario: Overvoltage guard on AC-DC adapter primary-side rectifier output. IC Role / Device Role / Timing Role: Unidirectional TVS parallel to bulk capacitor to clamp switch-mode ringing and line transients. Use Value: Clamps spikes to 72.7 V, preventing MOSFET avalanche failure and reducing need for oversized snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ45AHM3_B/I | Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical electrical specs but different material composition. | No functional difference; selected where halogen-free compliance is mandated (e.g., EU automotive Tier 1 specs). | Choose SMBJ45AHM3_B/I when halogen-free bill-of-materials is required; otherwise SMBJ45AHE3_B/I suffices. |
| SMCJ45AHE3_A/H | Larger SMC (DO-214AB) package; same VWM/VBR/VC but higher RθJA (50 °C/W) and 1500 W PPPM rating. | Better thermal performance and surge capacity; suited for higher-power industrial drives or harsher surge environments. | Choose SMCJ45AHE3_A/H only if 1500 W surge handling or lower thermal resistance is needed; SMBJ45AHE3_B/I fits space-constrained PCBs. |
Compared with SMBJ45AHM3_B/I, SMBJ45AHE3_B/I offers identical protection performance with standard RoHS compliance; versus SMCJ45AHE3_A/H, it trades surge capacity and thermal margin for compact SMB footprint - ideal for dense automotive modules where board area is constrained.
Availability
SMBJ45AHE3_B/I is available at Aetrix Electronics and suitable for automotive power management, industrial sensor interface design, and telecom infrastructure requiring stable component supply with AEC-Q101 validation and full traceability.
Supply support for SMBJ45AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade qualification.
The SMBJ series delivers standardized TVS protection across 5.0 V–188 V VWM range, engineered specifically for cost-sensitive, high-volume automotive and industrial applications demanding AEC-Q101 compliance and robust surge immunity.
FAQ
What is the clamping voltage of SMBJ45AHE3_B/I at its rated peak pulse current?
The SMBJ45AHE3_B/I has a maximum clamping voltage (VC) of 72.7 V when subjected to its specified peak pulse current of 8.3 A using a 10/1000 µs waveform. This value is measured under standard test conditions (TA = 25 °C, mounted on 0.2" × 0.2" copper pads) and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ45AHE3_B/I maintains this clamping performance consistently due to its glass-passivated junction and low incremental surge resistance.
Is SMBJ45AHE3_B/I qualified for automotive applications?
Yes, SMBJ45AHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392 (Revision 09-Jan-2024). This qualification covers stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing - validating its use in engine control units, body electronics, and ADAS subsystems. The SMBJ45AHE3_B/I operates reliably from -55 °C to +150 °C junction temperature.
What does the "HE3" suffix mean in SMBJ45AHE3_B/I?
The "HE3" suffix in SMBJ45AHE3_B/I indicates RoHS-compliant construction and AEC-Q101 qualification. "H" denotes the AEC-Q101 grade, "E3" specifies RoHS-compliant (lead-free) matte tin plating and molding compound. The "B/I" portion identifies tape-and-reel packaging: "B" is the revision code, and "I" denotes 3200-unit reels on 13-inch diameter carriers. This distinguishes SMBJ45AHE3_B/I from commercial-grade E3 variants and halogen-free HM3 versions.
How does SMBJ45AHE3_B/I compare to bidirectional TVS diodes like SMBJ45CA?
SMBJ45AHE3_B/I is unidirectional and intended for DC line protection where polarity is fixed - it conducts only in reverse bias above VBR. In contrast, SMBJ45CA is bidirectional, offering symmetrical clamping for AC-coupled or polarity-agnostic signals. SMBJ45AHE3_B/I exhibits lower leakage (<1.0 µA at 45 V) than SMBJ45CA (which doubles ID limit per note 3), making it preferable for low-power always-on automotive modules. The SMBJ45AHE3_B/I also carries AEC-Q101 certification, whereas SMBJ45CA variants may require separate qualification verification.
What is the thermal resistance of SMBJ45AHE3_B/I, and how does it affect layout?
The SMBJ45AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes no additional heatsinking; designers must allocate adequate copper area and consider airflow or adjacent thermal mass to avoid exceeding 150 °C junction temperature during repetitive surges. Layouts using smaller pads or no thermal relief will see degraded surge endurance - the SMBJ45AHE3_B/I's performance is directly tied to PCB copper implementation.
SMBJ45AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 45V
- Voltage - Breakdown (Min):
- 50V
- Voltage - Clamping (Max) @ Ipp:
- 72.7V
- Current - Peak Pulse (10/1000µs):
- 8.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ45AHE3_B/I FAQ
1.How can I place an order for SMBJ45AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ45AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ45AHE3_B/I reliable?
The price and inventory of SMBJ45AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ45AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ45AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ45AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ45AHE3_B/I?
SMBJ45AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ45AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ45AHE3_B/I?
For technical support, including SMBJ45AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ45AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ45AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ45AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ45AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ45AHE3_B/I?
All SMBJ45AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ45AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ45AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ45AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ45AHE3_B/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
