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Vishay General Semiconductor - Diodes Division SMBJ45CD-M3/I
- Part No.:
- SMBJ45CD-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ45CD-M3/I.pdf
- Description:
- TVS DIODE 45VWM 71.6VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,410
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Product details
Overview
SMBJ45CD-M3/I from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping ESD and surge transients on signal/power lines. It features a 45 V stand-off voltage (VWM), 50.8–54.5 V breakdown voltage (VBR) at 1 mA, 71.6 V maximum clamping voltage (VC) at 8.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform.
For engineers reviewing the SMBJ45CD-M3/I datasheet, SMBJ45CD-M3/I pinout, SMBJ45CD-M3/I application, or SMBJ45CD-M3/I equivalent, this device is selected for robust overvoltage protection in bidirectional data lines, DC power rails, and sensor interfaces where tight VBR tolerance (±3.5 %), low leakage (<0.5 μA at VWM), and MSL Level 1 reflow compatibility are critical.
Technical Context
This TVS operates symmetrically in both directions due to its bidirectional construction, enabling protection of AC-coupled or floating signal paths without polarity concerns. Its silicon avalanche structure delivers sub-nanosecond response time and low dynamic impedance, ensuring effective clamping before downstream ICs experience overstress.
The device is rated for 150 °C maximum junction temperature and exhibits thermal resistance of 125 °C/W (junction-to-ambient, mounted on minimum pad layout). Its halogen-free, RoHS-compliant M3 suffix confirms industrial-grade reliability, JESD201 Class 2 whisker resistance, and UL 94 V-0 molding compound compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 45 V - Maximum continuous reverse operating voltage before significant leakage; defines safe working range for protected line. |
| VBR min/max | 50.8 V / 54.5 V at 1 mA - Tight ±3.5 % tolerance ensures predictable turn-on across production lots. |
| VC @ IPPM | 71.6 V at 8.4 A - Clamping voltage under 10/1000 μs surge; limits stress on downstream components. |
| PPPM | 600 W - Peak pulse power handling per 10/1000 μs waveform; supports IEC 61000-4-5 Level 4 surges. |
| ID @ VWM | <0.5 μA - Ultra-low leakage preserves signal integrity and battery life in high-impedance circuits. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 2.2 mm height; compatible with automated pick-and-place. |
| MSL Level | Level 1 (260 °C peak) - Supports lead-free reflow without preconditioning; simplifies manufacturing flow. |
Pinout & Package
Two-terminal bidirectional device in SMB (DO-214AA) package; no polarity marking required. Terminals are matte tin-plated leads, solderable per J-STD-002 and JESD22-B102. Case meets UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient conduction path | Both terminals function identically; bidirectional clamping occurs regardless of voltage polarity applied. |
| Cathode Band (absent) | Polarity indicator | Not present-confirms bidirectional configuration; eliminates risk of incorrect orientation during placement. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise, repeatable clamping threshold across batches-critical for protecting narrow-voltage-margin ICs. |
| 600 W PPPM (10/1000 μs) | Withstands IEC 61000-4-5 combined wave surges up to 4 kV open-circuit / 2 kA short-circuit without degradation. |
| Low ID <0.5 μA at VWM | Minimizes standby power loss and avoids false triggering in high-impedance sensor bias networks. |
| MSL Level 1, 260 °C peak | Eliminates floor-life management and bake-out requirements-reduces SMT line complexity and cost. |
| Halogen-free, RoHS, JESD201 Class 2 | Meets industrial environmental compliance mandates and mitigates tin whisker risk in long-life deployments. |
Applications
| Industrial Sensor Interface | Automotive Body Control Module |
|---|---|
Use Scenario: Protecting analog output lines (e.g., 4–20 mA current loop) from load dump and inductive switching transients in factory automation systems. IC Role / Device Role / Timing Role: Bidirectional clamping element placed directly at connector entry point to shunt surge energy before reaching precision DAC or op-amp circuitry. Use Value: Prevents latch-up or permanent damage to 16-bit ADC drivers by limiting transient voltage to ≤71.6 V while maintaining <0.5 μA leakage at 45 V nominal rail. | Use Scenario: Safeguarding LIN bus transceivers and microcontroller GPIOs against battery reverse connection and jump-start spikes in door module ECUs. IC Role / Device Role / Timing Role: Primary overvoltage clamp on bidirectional LIN signal line (VCC and LIN pins), operating symmetrically across ±45 V common-mode range. Use Value: Ensures system-level ISO 16750-2 compliance with 100 V/100 ms test pulses by clamping within 1 ns and sustaining 600 W peak power without parameter shift. |
| Telecom DSL Line Card | Consumer USB-C Power Delivery |
Use Scenario: Shielding ADSL/VDSL line drivers and hybrid couplers from lightning-induced surges entering via outdoor copper pairs. IC Role / Device Role / Timing Role: First-stage protector on differential pair inputs, paired with gas discharge tube (GDT) for coordinated multi-stage suppression. Use Value: Provides fast-response clamping (VC = 71.6 V) to protect 100 Ω differential receivers while contributing negligible capacitance (<100 pF) to preserve 30 MHz signal bandwidth. | Use Scenario: Guarding USB-C CC and VCONN lines against ESD events (IEC 61000-4-2 ±15 kV contact) and hot-swap voltage overshoot during PD negotiation. IC Role / Device Role / Timing Role: Secondary TVS after primary ESD array, placed adjacent to connector to absorb residual energy missed by front-end protection. Use Value: Delivers ±15 kV ESD immunity with <0.5 μA leakage at 5 V logic levels, avoiding false detection during 300 μA VCONN sourcing and preserving PD communication timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ45CA-M3/5B | Same VWM (45 V), identical SMB package, but M3/5B suffix indicates different reel packaging (500 pcs/reel vs. 3200 pcs/reel); electrically identical. | No functional difference-same clamping performance, thermal specs, and reliability qualifications. | Select when smaller reel quantities or alternate logistics packaging are required. |
| SMCJ45CA | Higher 1500 W PPPM rating, larger SMC (DO-214AB) package (4.5 mm width vs. 3.9 mm), same VWM/VBR/VC specs. | Used where higher surge margin is needed (e.g., outdoor telecom), but requires PCB layout change due to larger footprint and thermal pad area. | Choose only if 600 W is insufficient and board space allows SMC package; not drop-in compatible. |
Compared with SMBJ45CD-M3/I, SMBJ45CA-M3/5B offers identical electrical and mechanical performance in a different reel format, while SMCJ45CA provides double the surge power in a physically larger package-requiring layout revision and offering no benefit for standard 600 W IEC 61000-4-5 applications.
Availability
SMBJ45CD-M3/I is available at Aetrix Electronics and suitable for industrial sensor interface, automotive body control module, and telecom DSL line card designs requiring stable component supply, consistent M3-grade reliability, and full traceability.
Supply support for SMBJ45CD-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on high-reliability, automotive-qualified, and industrial-grade products.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for robust, standardized transient suppression in space-constrained surface-mount applications across automotive, industrial, and communications infrastructure.
FAQ
What is the clamping voltage of SMBJ45CD-M3/I under a 10/1000 μs surge?
The SMBJ45CD-M3/I has a maximum clamping voltage (VC) of 71.6 V at 8.4 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is guaranteed across temperature and production lot, ensuring predictable protection margin for downstream 48 V-rated components. The SMBJ45CD-M3/I achieves this with low incremental surge resistance and sub-nanosecond response.
Is SMBJ45CD-M3/I suitable for bidirectional signal lines like RS-485 or CAN FD?
Yes, SMBJ45CD-M3/I is explicitly designed for bidirectional applications-the "CD" suffix denotes symmetrical clamping behavior in both polarities. It protects balanced differential lines such as RS-485 without polarity constraints and maintains signal integrity with <100 pF junction capacitance. The SMBJ45CD-M3/I does not implement CAN protocol logic but serves as physical-layer overvoltage protection for CAN FD transceivers.
Does SMBJ45CD-M3/I require a heatsink for 1 W steady-state dissipation?
No-SMBJ45CD-M3/I is rated for 1.0 W power dissipation at TA = 25 °C on standard PCB pads, with no external heatsink needed for typical transient duty cycles (0.01 %). Its RθJA of 125 °C/W means junction temperature rise is ~125 °C at 1 W ambient; however, actual power is pulsed and intermittent. Continuous DC power must remain below 1.0 W, and the SMBJ45CD-M3/I should never be used for sustained linear regulation.
How does the M3 suffix affect the reliability of SMBJ45CD-M3/I?
The M3 suffix on SMBJ45CD-M3/I certifies halogen-free, RoHS-compliant construction, UL 94 V-0 flammability rating, and JESD201 Class 2 whisker resistance on matte tin terminations. These attributes ensure long-term solder joint integrity in industrial environments with thermal cycling and humidity exposure. The SMBJ45CD-M3/I meets IPC/JEDEC standards for lead-free reflow without preconditioning.
Can SMBJ45CD-M3/I replace SMBJ45A-M3/I in an existing design?
No-SMBJ45CD-M3/I is bidirectional, while SMBJ45A-M3/I is unidirectional (cathode-banded). Substituting them risks improper clamping on negative-going transients or reverse-bias failure. The SMBJ45CD-M3/I lacks a cathode band and conducts equally in both directions; using it in place of a unidirectional part may cause unintended conduction in DC-biased circuits. Always verify polarity requirements before replacement.
SMBJ45CD-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 45V
- Voltage - Breakdown (Min):
- 50.8V
- Voltage - Clamping (Max) @ Ipp:
- 71.6V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ45CD-M3/I FAQ
1.How can I place an order for SMBJ45CD-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ45CD-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ45CD-M3/I reliable?
The price and inventory of SMBJ45CD-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ45CD-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ45CD-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ45CD-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ45CD-M3/I?
SMBJ45CD-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ45CD-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ45CD-M3/I?
For technical support, including SMBJ45CD-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ45CD-M3/I requirements.
6.How does Aetrix verify that SMBJ45CD-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ45CD-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ45CD-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ45CD-M3/I?
All SMBJ45CD-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ45CD-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ45CD-M3/I part is unused and in its original packaging.
Return procedure for SMBJ45CD-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ45CD-M3/I Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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