Vishay General Semiconductor - Diodes Division SMBJ48C-E3/52
- Part No.:
- SMBJ48C-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ48C-E3/52.pdf
- Description:
- TVS DIODE 48VWM 85.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ48C-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 48 V stand-off voltage (VWM), 53.3–58.9 V breakdown range (VBR at 1 mA), 77.4 V maximum clamping voltage (VC) at 7.8 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on power rails and signal lines of industrial motor drives and automotive ECUs.
For engineers reviewing the SMBJ48C-E3/52 datasheet, SMBJ48C-E3/52 pinout, SMBJ48C-E3/52 application, or SMBJ48C-E3/52 equivalent, key selection criteria include clamping performance under 10/1000 µs surge, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking, RoHS-compliant matte tin plating, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when transient voltage exceeds VWM = 48 V, it avalanches into low-impedance conduction to divert surge current away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ps), critical for suppressing ESD and inductive switching spikes.
The device is rated for repetitive 600 W pulses at 0.01% duty cycle, with derating above TA = 25 °C per Figure 2, and supports peak forward surge current IFSM = 100 A (8.3 ms half-sine). Junction temperature range spans −55 °C to +150 °C, and it meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 48 V - maximum continuous reverse operating voltage before significant leakage; defines safe operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 53.3–58.9 V at 1 mA - guaranteed avalanche initiation range; ensures predictable turn-on during transients |
| VC (Clamping Voltage) | 77.4 V at IPPM = 7.8 A - maximum voltage seen by protected circuit during 10/1000 µs surge; determines stress on downstream components |
| PPPM (Peak Pulse Power) | 600 W - surge energy handling capacity with 10/1000 µs waveform; enables protection against IEC 61000-4-5 Level 3/4 surges |
| RθJA (Junction-to-Ambient) | 100 °C/W - thermal resistance with recommended 0.2" × 0.2" copper pads; dictates power derating in real PCB layouts |
| IFSM (Surge Current) | 100 A - single half-sine (8.3 ms) forward surge rating; validates robustness against inrush or fault currents in power stages |
| TJ max. | +150 °C - maximum junction temperature; supports operation in under-hood automotive and industrial environments |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band; unidirectional configuration only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / surge return path | Connected to ground or low-impedance return plane; must handle full IPPM during clamping |
| Cathode | Protected line connection / high-side terminal | Connected to the line being protected (e.g., 48 V rail); marked with band per JEDEC DO-214AA standard |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables reliable suppression of lightning-induced surges per IEC 61000-4-5 up to 4 kV (open-circuit) |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for 3.3 V/5 V logic interfaces |
| Glass passivated junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure |
| MSL Level 1, 260 °C peak reflow | Supports standard lead-free SMT assembly without preconditioning or special handling |
| RoHS-compliant, commercial grade (E3 suffix) | Meets global environmental compliance requirements; suitable for consumer, industrial, and telecom applications |
Applications
| Industrial Motor Drives | Automotive Engine Control Units |
|---|---|
Use Scenario: Protection of 48 V auxiliary power rails against load dump and inductive kickback from solenoid drivers. IC Role / Device Role / Timing Role: Shunt TVS diode placed directly across input terminals of DC-DC converters and gate drivers. Use Value: Clamps transients to ≤77.4 V, preventing damage to 65 V-rated MOSFETs and enabling compliance with ISO 7637-2 Pulse 5a. |
Use Scenario: Surge suppression on sensor supply lines (e.g., crankshaft position, oxygen sensors) exposed to alternator ripple and ignition noise. IC Role / Device Role / Timing Role: Unidirectional clamp between VCC and GND, upstream of LDO regulators. Use Value: Limits reverse leakage to ≤1.0 µA at 48 V, preserving low-power sleep mode integrity while surviving 100 A surge events. |
| Telecom Power Feeds | Consumer Power Adapters |
Use Scenario: Input-stage protection for PoE-powered equipment subjected to Ethernet cable ESD and induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 48 V PSE output before DC-DC isolation stage. Use Value: Achieves <1 ns response time and 77.4 V clamping, maintaining EN 61000-4-5 compliance without adding series impedance. |
Use Scenario: Secondary-side transient suppression on 48 V USB PD output rails in multi-port adapters. IC Role / Device Role / Timing Role: Final-line defense after primary TVS and common-mode chokes. Use Value: Withstands 600 W surges while occupying only 4.57 mm × 3.94 mm footprint, enabling compact dual-layer PCB designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ48A-E3/52 | Identical electrical specs and package; differs only in marking code (A vs C suffix denotes same unidirectional variant per Vishay ordering guide) | No functional difference; both rated for 48 V VWM, 77.4 V VC, and 600 W PPPM | Select SMBJ48C-E3/52 when matching legacy BOMs specifying "C" suffix; otherwise interchangeable |
| SMCJ48A-E3/52 | Same VWM/VC but larger SMC (DO-214AB) package; 1500 W PPPM, RθJA = 40 °C/W, higher IPPM = 15.4 A | Better thermal performance and surge margin; requires larger PCB area and different pad layout | Choose SMCJ48A-E3/52 where higher surge endurance or lower thermal resistance is required; not drop-in compatible |
Compared with SMBJ48C-E3/52, SMBJ48A-E3/52 offers identical protection performance in the same footprint, while SMCJ48A-E3/52 trades board space for 2.5× higher pulse power and improved thermal management - making it suitable for high-reliability industrial systems where layout flexibility exists.
Availability
SMBJ48C-E3/52 is available at Aetrix Electronics and suitable for industrial motor drives, automotive engine control units, telecom power feeds, and consumer power adapters requiring stable component supply and consistent surge protection performance across production batches.
Supply support for SMBJ48C-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where failure due to voltage surges is unacceptable.
FAQ
What is the clamping voltage of SMBJ48C-E3/52 at its rated peak pulse current?
The SMBJ48C-E3/52 has a maximum clamping voltage (VC) of 77.4 V at IPPM = 7.8 A with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on the protected circuit during surge events. The SMBJ48C-E3/52 maintains this clamping performance across its specified operating temperature range and is validated per ANSI/IEEE C62.35 standards.
Is SMBJ48C-E3/52 suitable for automotive applications requiring AEC-Q101 qualification?
No - SMBJ48C-E3/52 is RoHS-compliant commercial-grade (E3 suffix) and not AEC-Q101 qualified. For automotive use, select the Vishay variant SMBJ48CHE3_B/H or SMBJ48CHM3_B/H, which carry the HE3 or HM3 suffix and are explicitly qualified to AEC-Q101. The SMBJ48C-E3/52 lacks the extended temperature cycling, humidity testing, and failure analysis required for automotive-grade certification.
How does the SMBJ48C-E3/52 differ from bidirectional variants like SMBJ48CA-E3/52?
The SMBJ48C-E3/52 is unidirectional and features a cathode band marking; it conducts only in reverse bias during overvoltage events. In contrast, SMBJ48CA-E3/52 is bidirectional with no polarity marking and suppresses transients in both directions - essential for AC-coupled signal lines or floating buses. Their VBR, VC, and PPPM ratings are identical, but circuit integration and layout routing differ significantly due to polarity constraints.
What is the thermal resistance of SMBJ48C-E3/52, and how does it affect PCB layout?
The SMBJ48C-E3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout; reducing copper area increases thermal resistance and requires derating of power dissipation. For sustained operation near PD = 5.0 W, designers must ensure adequate copper pour and avoid thermal bottlenecks around the SMBJ48C-E3/52 footprint.
Can SMBJ48C-E3/52 be used in place of SMAJ48A-E3/52?
No - SMBJ48C-E3/52 and SMAJ48A-E3/52 share the same VWM and VC ratings but differ in package (SMB vs SMA) and surge capability: SMAJ48A-E3/52 is rated for 400 W PPPM, while SMBJ48C-E3/52 delivers 600 W. Substituting SMBJ48C-E3/52 for SMAJ48A-E3/52 is acceptable if board space allows the larger SMB outline and higher surge margin is beneficial; however, the reverse substitution risks inadequate protection under IEC 61000-4-5 stress.
SMBJ48C-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 48V
- Voltage - Breakdown (Min):
- 53.3V
- Voltage - Clamping (Max) @ Ipp:
- 85.5V
- Current - Peak Pulse (10/1000µs):
- 7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ48C-E3/52 FAQ
1.How can I place an order for SMBJ48C-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ48C-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ48C-E3/52 reliable?
The price and inventory of SMBJ48C-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ48C-E3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ48C-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ48C-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ48C-E3/52?
SMBJ48C-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ48C-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ48C-E3/52?
For technical support, including SMBJ48C-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ48C-E3/52 requirements.
6.How does Aetrix verify that SMBJ48C-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ48C-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ48C-E3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ48C-E3/52?
All SMBJ48C-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ48C-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ48C-E3/52 part is unused and in its original packaging.
Return procedure for SMBJ48C-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ48C-E3/52 Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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