Vishay General Semiconductor - Diodes Division SMBJ48HE3/5B
- Part No.:
- SMBJ48HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ48HE3/5B.pdf
- Description:
- TVS DIODE 48VWM 85.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,708
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ48HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 48 V stand-off voltage (VWM), 53.3–58.9 V breakdown voltage (VBR) at 1 mA, 7.8 A peak pulse current (IPPM) under 10/1000 µs waveform, and clamps transients to ≤77.4 V - used in automotive ECUs, industrial PLC I/O modules, and telecom power supplies.
For engineers reviewing the SMBJ48HE3/5B datasheet, SMBJ48HE3/5B pinout, SMBJ48HE3/5B application, or SMBJ48HE3/5B equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), clamping performance, and real-world protection use cases - all aligned with Vishay Document #88392 (Rev. 09-Jan-2024).
Technical Context
The SMBJ48HE3/5B operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its VBR threshold. Its glass-passivated junction ensures stable breakdown behavior and low leakage (<1.0 µA at VWM), while the 600 W peak pulse power rating (10/1000 µs) supports repetitive surge events at 0.01% duty cycle.
Thermally, it uses the SMB package's standardized 0.2" × 0.2" copper pad layout to achieve RθJL = 20 °C/W (junction-to-lead) and withstand TJ up to +150 °C. The cathode band marking confirms polarity, and its MSL Level 1 rating (260 °C reflow peak) enables compatibility with standard SMT assembly processes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 48 V - maximum continuous reverse operating voltage before clamping begins; sets safe DC rail margin for 48 V systems. |
| VBR (min/max) | 53.3 V / 58.9 V at IT = 1 mA - defines reliable turn-on window; ensures consistent clamping across production lots. |
| IPPM | 7.8 A (10/1000 µs) - peak surge current capability; determines minimum series impedance needed for IEC 61000-4-5 compliance. |
| VC | ≤77.4 V at IPPM - clamped voltage during worst-case surge; must be below protected IC's absolute maximum rating. |
| PPPM | 600 W - peak pulse power handling; validates suitability for high-energy transients like inductive switch-off in solenoid drivers. |
| TJ max. | +150 °C - maximum junction temperature; enables operation in under-hood automotive or enclosed industrial enclosures. |
| RθJA | 100 °C/W - thermal resistance junction-to-ambient on standard pads; informs derating above 25 °C ambient. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by a single band at one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path); conducts during forward-biased ESD events or fault conditions. |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., 48 V rail); avalanche conduction initiates here when VREV > VBR, shunting surge to ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS power domains - no additional qualification required. |
| 600 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 3 (1 kV/2 Ω) surge testing without degradation when properly mounted on 5 mm × 5 mm copper pads. |
| Low incremental surge resistance | Enables tighter clamping (VC − VBR ≈ 24 V) versus competing TVS devices, reducing stress on downstream MOSFETs or regulators. |
| MSL Level 1, 260 °C peak reflow | Compatible with standard lead-free SMT reflow profiles without preconditioning or special handling - reduces manufacturing complexity. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage under thermal cycling and humidity exposure - critical for 15+ year industrial deployments. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 48 V battery-fed microcontroller power inputs in vehicle body control modules against load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VIN and GND, acting as last-line clamping element before LDO input. Use Value: Clamps transients to ≤77.4 V, staying well below typical 80 V absolute max rating of automotive-grade LDOs and ensuring system-level ISO 7637-2 compliance. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA loop drivers) in factory automation sensors exposed to relay coil flyback and EMI coupling. IC Role / Device Role / Timing Role: TVS connected anode-to-signal, cathode-to-VCC, suppressing positive-going surges on current-loop outputs. Use Value: Sub-1 ns response time limits voltage overshoot to <100 ns duration, preventing latch-up in precision DACs and op-amps driving the loop. |
| Telecom DC Power Input Protection | Motor Drive Gate Driver Supply Protection |
Use Scenario: Shielding -48 V DC input stages of base station power converters from lightning-induced surges on outdoor feeder lines. IC Role / Device Role / Timing Role: Primary TVS on rectified -48 V bus, positioned upstream of bulk capacitors and active OR-ing FETs. Use Value: 600 W rating handles multiple 10/1000 µs surges per IEC 61000-4-5 Ed. 3, enabling field-replaceable design without derating penalties. |
Use Scenario: Securing isolated 15 V gate drive supplies feeding IGBTs in HVAC inverter modules subjected to cross-conduction transients. IC Role / Device Role / Timing Role: TVS placed across gate driver VDD-GND, limiting voltage spikes induced by Miller capacitance coupling during fast switching. Use Value: Low clamping ratio (VC/VBR ≈ 1.45) prevents false turn-on of high-side IGBTs during dV/dt events, improving inverter reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ48A-E3/5B | Commercial-grade (non-AEC-Q101), identical VWM, VBR, and clamping specs; same SMB package and pinout. | Approved for industrial/commercial use only; not certified for automotive under-hood environments. | Select when AEC-Q101 qualification is unnecessary and cost sensitivity is higher. |
| SMAJ48AHE3/A | Lower 400 W PPPM, smaller SMA (DO-214AC) package, 10.3 A IPPM; same VWM/VBR range but reduced thermal mass. | Limited to lower-energy transients; unsuitable for IEC 61000-4-5 Level 3 or automotive load dump. | Choose only if board space is constrained and surge requirements are ≤400 W - verify thermal derating at elevated ambient. |
Compared with SMBJ48A-E3/5B, the SMBJ48HE3/5B adds AEC-Q101 qualification for automotive deployment without changing electrical performance; versus SMAJ48AHE3/A, it delivers 50% higher surge energy handling and superior thermal dissipation in the larger SMB footprint - critical for mission-critical 48 V systems.
Availability
SMBJ48HE3/5B is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controller I/O modules, and telecom -48 V power supply inputs requiring stable component supply and full AEC-Q101 traceability.
Supply support for SMBJ48HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, automotive qualification, and high-volume manufacturability.
The SMBJ series was engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure modes must be mitigated without compromising size or assembly compatibility.
FAQ
What is the AEC-Q101 qualification status of SMBJ48HE3/5B?
The SMBJ48HE3/5B is explicitly AEC-Q101 qualified, as confirmed in Vishay Document #88392 (Rev. 09-Jan-2024), Section "MECHANICAL DATA". This certification covers temperature cycling, mechanical shock, and surge endurance testing required for automotive under-hood applications - making SMBJ48HE3/5B suitable for direct use in ECU, BCM, and ADAS power domains without additional qualification.
How does SMBJ48HE3/5B differ from SMBJ48A-E3/5B?
The SMBJ48HE3/5B and SMBJ48A-E3/5B share identical electrical specifications (VWM = 48 V, VBR = 53.3–58.9 V, VC ≤ 77.4 V) and SMB package, but SMBJ48HE3/5B carries AEC-Q101 qualification while SMBJ48A-E3/5B is commercial-grade only. Both use RoHS-compliant matte tin plating and meet JESD 201 Class 2 whisker resistance - the distinction lies solely in automotive process validation.
What is the maximum clamping voltage of SMBJ48HE3/5B at rated surge current?
The SMBJ48HE3/5B clamps to a maximum of 77.4 V at its rated peak pulse current of 7.8 A (10/1000 µs waveform), as specified in Table "ELECTRICAL CHARACTERISTICS" on page 2 of Vishay Document #88392. This value is measured with the device mounted on 0.2" × 0.2" copper pads - exceeding this clamping voltage indicates improper layout or degraded device performance.
Can SMBJ48HE3/5B be used in bidirectional protection circuits?
No - SMBJ48HE3/5B is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ48CA). Using SMBJ48HE3/5B in reverse-biased AC or data-line applications would result in forward conduction and potential failure; always match suffix ("A" = unidirectional, "CA" = bidirectional) to circuit topology.
What is the thermal resistance and recommended PCB layout for SMBJ48HE3/5B?
SMBJ48HE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as defined in Vishay Document #88392. To maintain reliability at elevated ambient temperatures, increase copper area or add thermal vias - derating curves in Figure 2 show 50% power reduction at TA = 75 °C.
SMBJ48HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 48V
- Voltage - Breakdown (Min):
- 53.3V
- Voltage - Clamping (Max) @ Ipp:
- 85.5V
- Current - Peak Pulse (10/1000µs):
- 7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ48HE3/5B FAQ
1.How can I place an order for SMBJ48HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ48HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ48HE3/5B reliable?
The price and inventory of SMBJ48HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ48HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ48HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ48HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ48HE3/5B?
SMBJ48HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ48HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ48HE3/5B?
For technical support, including SMBJ48HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ48HE3/5B requirements.
6.How does Aetrix verify that SMBJ48HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ48HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ48HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ48HE3/5B?
All SMBJ48HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ48HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ48HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ48HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ48HE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)