My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ5.0AHE3_A/H
;;2.jpg)
- Part No.:
- SMBJ5.0AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ5.0AHE3_A/H.pdf
- Description:
- TVS DIODE 5VWM 9.2VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:11,478
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ5.0AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for primary overvoltage protection of DC power rails and signal lines. It features a 5.0 V stand-off voltage (VWM), 6.4–7.07 V breakdown voltage (VBR) at 10 mA, 600 W peak pulse power (10/1000 µs), and clamps transients to ≤9.2 V at 65.2 A, making it suitable for protecting MOSFET gates, microcontroller I/O, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the SMBJ5.0AHE3_A/H datasheet, SMBJ5.0AHE3_A/H pinout, SMBJ5.0AHE3_A/H application, or SMBJ5.0AHE3_A/H equivalent, key selection criteria include its AEC-Q101 qualification, low clamping voltage under surge, unidirectional polarity with cathode band marking, and SMB (DO-214AA) package compatibility with automated SMT assembly.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches to divert surge current away from downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<800 µA at VWM), while the 100 °C/W junction-to-ambient thermal resistance requires appropriate PCB copper pad area (0.2" × 0.2") for rated 600 W pulse handling.
The device is rated for -55 °C to +150 °C operating junction temperature, supports 100 A non-repetitive forward surge (8.3 ms half-sine), and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its 0.057 %/°C VBR temperature coefficient enables predictable performance across thermal gradients in engine control units and power supply front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 5.0 V - Maximum continuous reverse voltage before significant leakage; sets minimum system operating margin. |
| VBR (Breakdown Voltage) | 6.4–7.07 V at 10 mA - Confirmed avalanche initiation range; ensures reliable turn-on before IC damage thresholds. |
| VC (Clamping Voltage) | ≤9.2 V at IPPM = 65.2 A - Actual voltage seen by protected circuit during 600 W transient; critical for 3.3 V/5 V logic survival. |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs waveform) - Surge energy-handling capacity; validated for IEC 61000-4-5 Level 4 compliance. |
| ID (Reverse Leakage) | ≤800 µA at VWM - Low standby power loss; avoids loading sensitive reference or bias networks. |
| TJ max. | +150 °C - Enables placement near hot components (e.g., power MOSFETs, DC-DC inductors) without derating. |
| AEC-Q101 Qualified | Yes - Validated for automotive electronics per stress test requirements (HTOL, TC, HTRB); base suffix HE3 denotes qualification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by a single band on the body end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unmarked end) | Current entry point during forward conduction | Connected to ground or lower-potential rail in unidirectional clamp configuration. |
| Cathode (banded end) | Current exit point during reverse avalanche | Connected to protected line (e.g., 5 V rail, CAN_H); defines polarity and clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients from inductive switching (e.g., solenoid drivers, relay coils) without failure. |
| Low clamping voltage (≤9.2 V) | Keeps protected 5 V logic nodes below absolute maximum ratings during ESD or load dump events. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive under-hood and infotainment applications requiring long-term reliability at elevated temperatures. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with high-volume manufacturing flow. |
| Glass passivated junction | Ensures stable VBR and low leakage over time and temperature; reduces parameter drift in harsh environments. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 5 V supply lines in engine control modules from load dump and alternator ripple. IC Role / Device Role: Unidirectional shunt TVS placed between 5 V rail and chassis ground. Use Value: Clamps transients to ≤9.2 V, preventing latch-up or gate oxide damage in MCU and driver ICs. |
Use Scenario: Safeguarding analog output lines of pressure/temperature sensors in PLC I/O modules. IC Role / Device Role: Point-of-entry protection on 4–20 mA or 0–10 V signal paths against field wiring surges. Use Value: Sub-10 V clamping preserves ADC input integrity and avoids saturation or damage to op-amp buffers. |
| Consumer Device USB Port Protection | Telecom Equipment DC Bias Line Protection |
|
Use Scenario: Shielding VBUS and D+/D- lines in USB-C power delivery circuits from ESD and hot-plug spikes. IC Role / Device Role: Primary-level TVS on 5 V bus upstream of USB controller and port switch. Use Value: 600 W rating absorbs multiple contact ESD events (IEC 61000-4-2 ±8 kV) without degradation. |
Use Scenario: Guarding -48 V DC bias feeds in telecom line cards against lightning-induced surges. IC Role / Device Role: Reverse-biased TVS (anode to -48 V, cathode to ground) for negative rail clamping. Use Value: 150 °C max junction temperature allows operation in sealed, high-ambient telecom enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ5.0A-E3/52 | Commercial-grade (non-AEC-Q101), same electrical specs and SMB package. | Lacks automotive qualification; suitable for consumer/industrial designs not requiring AEC validation. | Select when cost sensitivity outweighs automotive reliability requirements. |
| SMCJ5.0AHE3_A/H | Same AEC-Q101 qualification but in larger SMC (DO-214AB) package; 1500 W PPPM rating. | Higher power handling requires more PCB area; used where surge threat exceeds 600 W. | Choose when system-level testing reveals insufficient margin with SMBJ5.0AHE3_A/H's 600 W rating. |
Compared with SMBJ5.0AHE3_A/H, the SMBJ5.0A-E3/52 offers identical protection performance at lower cost but no automotive qualification, while the SMCJ5.0AHE3_A/H delivers 2.5× higher surge power in a larger footprint-enabling tiered design reuse across product families with varying threat levels.
Availability
SMBJ5.0AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, and telecom power supplies requiring stable component supply with AEC-Q101 assurance, RoHS compliance, and traceable sourcing.
Supply support for SMBJ5.0AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets robust, surface-mount transient suppression for automotive, industrial, and communications infrastructure-designed to replace older SMA/SMB packages with enhanced power density and qualification rigor.
FAQ
What is the clamping voltage of SMBJ5.0AHE3_A/H at its rated peak pulse current?
The SMBJ5.0AHE3_A/H has a maximum clamping voltage (VC) of 9.2 V when subjected to its peak pulse current (IPPM) of 65.2 A under the standard 10/1000 µs waveform. This value is measured per JEDEC test conditions and guarantees that protected circuitry sees no more than 9.2 V during a full-rated 600 W transient event, making SMBJ5.0AHE3_A/H appropriate for safeguarding 5 V logic rails and interface ICs.
Is SMBJ5.0AHE3_A/H suitable for automotive applications?
Yes, SMBJ5.0AHE3_A/H is AEC-Q101 qualified, as confirmed by its "HE3" suffix and documentation in Vishay's 88392 datasheet. It undergoes stress testing for high-temperature operating life, temperature cycling, and humidity bias, enabling use in engine control units, body electronics, and ADAS subsystems where reliability under thermal and vibration stress is mandatory. The SMBJ5.0AHE3_A/H meets these requirements without derating up to +150 °C junction temperature.
How does the SMBJ5.0AHE3_A/H differ from the bidirectional SMBJ5.0CA variant?
The SMBJ5.0AHE3_A/H is unidirectional, with polarity marked by a cathode band and intended for DC rail protection where current flows only in one direction. In contrast, SMBJ5.0CA is bidirectional, lacks polarity marking, and protects AC or differential lines like RS-485 or CAN. Their breakdown voltages differ: SMBJ5.0AHE3_A/H has VBR = 6.4–7.07 V (reverse only), while SMBJ5.0CA has symmetric VBR ≈ 6.4–7.25 V in both directions. Select SMBJ5.0AHE3_A/H for 5 V supply clamping, not signal-line differential protection.
What PCB layout considerations apply to SMBJ5.0AHE3_A/H for optimal thermal and surge performance?
To achieve rated 600 W peak pulse power, SMBJ5.0AHE3_A/H must be mounted on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the Vishay datasheet. Smaller pads cause excessive junction temperature rise and premature failure. Additionally, short, wide traces to ground minimize inductance and preserve clamping speed; avoid vias in the main surge path. The SMBJ5.0AHE3_A/H thermal resistance (RθJA = 100 °C/W) assumes this layout-deviations require derating per Figure 2 in document 88392.
Does SMBJ5.0AHE3_A/H meet RoHS and halogen-free requirements?
Yes, SMBJ5.0AHE3_A/H is RoHS-compliant and AEC-Q101 qualified, as indicated by the "HE3" suffix per Vishay's ordering nomenclature. It contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE, and complies with EU Directive 2011/65/EU. While not halogen-free (that requires "HM3" suffix), SMBJ5.0AHE3_A/H uses brominated flame-retardant molding compound meeting UL 94 V-0, and its matte tin plating satisfies JESD 201 Class 2 whisker resistance requirements.
SMBJ5.0AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- 9.2V
- Current - Peak Pulse (10/1000µs):
- 65.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ5.0AHE3_A/H FAQ
1.How can I place an order for SMBJ5.0AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ5.0AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ5.0AHE3_A/H reliable?
The price and inventory of SMBJ5.0AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ5.0AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ5.0AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ5.0AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ5.0AHE3_A/H?
SMBJ5.0AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ5.0AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ5.0AHE3_A/H?
For technical support, including SMBJ5.0AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ5.0AHE3_A/H requirements.
6.How does Aetrix verify that SMBJ5.0AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ5.0AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ5.0AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ5.0AHE3_A/H?
All SMBJ5.0AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ5.0AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ5.0AHE3_A/H part is unused and in its original packaging.
Return procedure for SMBJ5.0AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ5.0AHE3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
