Vishay General Semiconductor - Diodes Division SMBJ5.0AHM3_A/H
- Part No.:
- SMBJ5.0AHM3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ5.0AHM3_A/H.pdf
- Description:
- TVS DIODE 5VWM 9.2VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:730
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Product details
Overview
SMBJ5.0AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features 5.0 V stand-off voltage (VWM), 6.4–7.07 V breakdown voltage (VBR) at 10 mA, 600 W peak pulse power (10/1000 μs), and clamps to ≤9.2 V at 65.2 A peak surge current - deployed in automotive sensor protection and industrial I/O interfaces.
For engineers reviewing the SMBJ5.0AHM3_A/H datasheet, SMBJ5.0AHM3_A/H pinout, SMBJ5.0AHM3_A/H application, or SMBJ5.0AHM3_A/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a clamping device in parallel with protected circuitry, conducting only when reverse voltage exceeds VBR (6.4–7.07 V). Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns), enabling effective suppression of lightning-induced surges and inductive kickback.
The SMBJ5.0AHM3_A/H uses a single PN junction structure with cathode band marking, rated for 100 A non-repetitive forward surge (8.3 ms half-sine), and exhibits 0.057 %/°C temperature coefficient of VBR - critical for thermal stability across automotive (-55 to +150 °C) operating ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 5.0 V - maximum continuous reverse working voltage before leakage exceeds 800 μA; defines safe operating margin below breakdown. |
| VBR min/max | 6.4 V / 7.07 V at IT = 10 mA - guaranteed breakdown window ensuring consistent clamping onset across production lots. |
| VC @ IPPM | ≤9.2 V at 65.2 A - clamped voltage during 10/1000 μs surge; determines maximum stress imposed on downstream ICs. |
| PPPM | 600 W - peak pulse power handling capability under standard 10/1000 μs waveform; defines transient energy absorption capacity. |
| RθJA | 100 °C/W - junction-to-ambient thermal resistance on standard PCB pad layout; informs derating above 25 °C ambient. |
| TJ max | +150 °C - maximum allowable junction temperature; enables operation in under-hood automotive environments. |
| Package | SMB (DO-214AA) - industry-standard surface-mount outline with 0.220" length, compatible with J-STD-020 MSL Level 1 reflow. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, halogen-free and RoHS-compliant (HM3 suffix), MSL Level 1, 260 °C peak reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., GND) in unidirectional configuration; carries full surge current during clamping. |
| Cathode | Reverse-biased clamping terminal | Marked with band; connected to protected line (e.g., 5 V rail); initiates avalanche conduction when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and ADAS sensor interfaces per stress test requirements. |
| 600 W peak pulse power | Handles high-energy transients from relay coil de-energization or load dump without degradation over rated lifetime. |
| Glass passivated junction | Ensures long-term reliability and stable VBR drift <±5% over 1000 hrs at TJ = 125 °C. |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes overvoltage stress on protected ICs compared to higher-ratio TVS devices, improving system robustness. |
| Halogen-free, RoHS-compliant (HM3) | Meets environmental compliance for global automotive and industrial OEM supply chains without compromising surge performance. |
Applications
| Automotive Sensor Protection | Industrial PLC I/O Protection |
|---|---|
|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor inputs (e.g., pressure, temperature) from load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between signal line and ground, absorbing transients before they reach sensitive input stages. Use Value: Maintains signal integrity by limiting voltage excursion to ≤9.2 V during 65.2 A surge, preventing latch-up or gate oxide damage in 5 V interface ICs. |
Use Scenario: Safeguarding digital input channels on programmable logic controllers exposed to inductive switching noise from solenoids and contactors. IC Role / Device Role / Timing Role: Parallel-connected transient suppressor on 24 V DC input lines, triggered within <1 ns to clamp spikes before propagation to microcontroller GPIOs. Use Value: Enables reliable operation in harsh factory environments by sustaining 100 A 8.3 ms surge events without parametric shift or failure. |
| Consumer Power Adapter Input | Telecom Line Card Surge Protection |
|
Use Scenario: Secondary-side overvoltage protection on 5 V USB-C PD adapter outputs against fault conditions and ESD coupling. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 5.0 V) placed after DC-DC converter output, clamping overshoot during regulation loop instability. Use Value: Prevents damage to connected devices by limiting output voltage to ≤9.2 V during transient faults while maintaining low leakage (<800 μA) during normal operation. |
Use Scenario: Front-end protection for Ethernet PHYs and PoE injectors subjected to lightning-induced surges on twisted-pair lines. IC Role / Device Role / Timing Role: Unidirectional TVS on DC bias lines (e.g., MDI-X pairs), coordinated with gas discharge tubes for multi-stage protection. Use Value: Provides precise low-voltage clamping (6.4–7.07 V VBR) to complement higher-voltage primary protectors, reducing let-through energy to <10 mJ. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ5.0AHE3_B/H | Same electrical specs, but RoHS-compliant commercial grade (E3) instead of halogen-free (HM3); no AEC-Q101 qualification. | Approved for industrial/commercial use only; not certified for automotive under-hood deployment. | Select when AEC-Q101 is not required and halogen-free content is not mandated by end-customer specification. |
| SMAJ5.0A-M3 | Lower PPPM (400 W vs. 600 W), SMA package (smaller footprint, higher RθJA = 140 °C/W), same VWM/VBR range. | Limited to lower-energy transients; unsuitable for automotive load dump or high-current industrial switching. | Choose for space-constrained consumer designs where 400 W surge rating suffices and thermal margin allows higher junction rise. |
Compared with SMBJ5.0AHE3_B/H and SMAJ5.0A-M3, the SMBJ5.0AHM3_A/H uniquely combines AEC-Q101 qualification, halogen-free compliance, and 600 W surge capability in SMB package - making it the only option qualified for automotive-grade 5 V rail protection requiring both environmental and reliability certification.
Availability
SMBJ5.0AHM3_A/H is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O modules, and telecom line card protection requiring stable component supply with full traceability and lifecycle management.
Supply support for SMBJ5.0AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets high-energy transient suppression in automotive, industrial, and communications systems, engineered for robust clamping performance, AEC-Q101 compliance, and seamless SMT integration.
FAQ
What is the maximum clamping voltage of SMBJ5.0AHM3_A/H at its rated peak pulse current?
The SMBJ5.0AHM3_A/H has a maximum clamping voltage (VC) of 9.2 V when subjected to its peak pulse current (IPPM) of 65.2 A under the standard 10/1000 μs waveform. This value is measured at the device terminals and represents the upper limit of voltage seen by protected circuitry during worst-case surge events, directly supporting design margin calculations for 5 V systems.
Is SMBJ5.0AHM3_A/H qualified for automotive applications?
Yes, SMBJ5.0AHM3_A/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" and documentation referencing AEC-Q101 testing. This qualification covers stress tests including HTGB, HTRB, TCT, and mechanical shock - validating its suitability for automotive powertrain, body electronics, and ADAS sensor protection where reliability under thermal and vibration stress is mandatory.
What does the "HM3" suffix indicate in SMBJ5.0AHM3_A/H?
The "HM3" suffix in SMBJ5.0AHM3_A/H denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. It distinguishes this variant from E3 (RoHS-only commercial grade) and HE3 (AEC-Q101 + RoHS, but not halogen-free). The HM3 version meets stringent environmental requirements for automotive OEMs and industrial customers mandating zero brominated flame retardants and chlorine content.
How does SMBJ5.0AHM3_A/H differ from bidirectional variants like SMBJ5.0CA?
SMBJ5.0AHM3_A/H is unidirectional, with polarity marked by a cathode band and intended for DC line protection where reverse conduction must be blocked. In contrast, SMBJ5.0CA is bidirectional, symmetric in both directions, and used in AC-coupled or differential signal paths. Their VBR and VC values differ: SMBJ5.0CA has VBR up to 7.25 V and higher clamping voltage due to dual-junction architecture, making them non-interchangeable without circuit redesign.
What PCB pad layout is recommended for optimal thermal and surge performance of SMBJ5.0AHM3_A/H?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad for each terminal of SMBJ5.0AHM3_A/H to achieve rated 600 W pulse power and 100 °C/W thermal resistance. Using smaller pads reduces surge capability and increases junction temperature - potentially derating IPPM by up to 40% at 70 °C ambient. Thermal vias under pads further improve heat dissipation in high-reliability designs.
SMBJ5.0AHM3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- 9.2V
- Current - Peak Pulse (10/1000µs):
- 65.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ5.0AHM3_A/H FAQ
1.How can I place an order for SMBJ5.0AHM3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ5.0AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ5.0AHM3_A/H reliable?
The price and inventory of SMBJ5.0AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ5.0AHM3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ5.0AHM3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ5.0AHM3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ5.0AHM3_A/H?
SMBJ5.0AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ5.0AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ5.0AHM3_A/H?
For technical support, including SMBJ5.0AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ5.0AHM3_A/H requirements.
6.How does Aetrix verify that SMBJ5.0AHM3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ5.0AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ5.0AHM3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ5.0AHM3_A/H?
All SMBJ5.0AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ5.0AHM3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ5.0AHM3_A/H part is unused and in its original packaging.
Return procedure for SMBJ5.0AHM3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ5.0AHM3_A/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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