Vishay General Semiconductor - Diodes Division SMBJ5.0AHM3_B/H
- Part No.:
- SMBJ5.0AHM3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ5.0AHM3_B/H.pdf
- Description:
- 600W,5.0V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:7,049
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ5.0AHM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for primary overvoltage protection of 5.0 V DC power rails and signal lines. It delivers 600 W peak pulse power (10/1000 µs), clamps transients to ≤9.2 V at 65.2 A, and features 6.4–7.07 V breakdown voltage at 10 mA test current. Used in automotive ECUs, industrial sensor interfaces, and USB power input stages.
For engineers reviewing the SMBJ5.0AHM3_B/H datasheet, SMBJ5.0AHM3_B/H pinout, SMBJ5.0AHM3_B/H application, or SMBJ5.0AHM3_B/H equivalent, key selection criteria include its 5.0 V stand-off voltage, unidirectional polarity with cathode band marking, AEC-Q101 qualification status, halogen-free RoHS compliance, and 100 A IFSM surge rating - all critical for automotive-grade board-level ESD and load-dump protection.
Technical Context
This TVS operates as a clamping device that remains high-impedance below 5.0 V (VWM), then rapidly transitions to low-impedance conduction above its 6.4–7.07 V breakdown range (VBR). Its glass-passivated junction ensures stable leakage (<800 µA at VWM) and repeatable clamping performance under repetitive transients.
The SMBJ5.0AHM3_B/H uses a single PN junction structure optimized for fast response (<1 ns), low dynamic impedance, and minimal capacitance (typ. 1000 pF at 0 V), making it suitable for protecting low-speed analog and digital I/O without signal distortion. Thermal resistance is 100 °C/W (junction-to-ambient) on standard 5.0 mm × 5.0 mm copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 5.0 V - Maximum continuous reverse voltage before significant leakage; defines maximum operating rail voltage it can protect. |
| VBR (Breakdown Voltage) | 6.4–7.07 V at 10 mA - Confirmed voltage range where device enters avalanche conduction; ensures reliable triggering above system nominal voltage. |
| VC (Clamping Voltage) | 9.2 V at IPPM = 65.2 A - Peak voltage seen by protected circuit during 600 W transient; determines downstream component voltage stress. |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs waveform) - Energy-handling capability for standardized lightning/surge events per IEC 61000-4-5. |
| IFSM (Surge Current) | 100 A (8.3 ms half-sine) - Unidirectional surge withstand for automotive load-dump events per ISO 7637-2. |
| TJ max. | +150 °C - Maximum junction temperature enabling operation in under-hood automotive environments. |
| Package | SMB (DO-214AA) - Standardized 2-pin surface-mount outline with 5.59 mm max length; compatible with automated pick-and-place and reflow. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, MSL Level 1 (260 °C peak reflow), UL 94 V-0 rated compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or return path; completes conduction loop during transient clamp event. |
| Cathode | High-side connection point | Marked with band; connects to protected line (e.g., 5 V rail); conducts when voltage exceeds VBR relative to anode. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensors per stress test requirements. |
| Halogen-free & RoHS-compliant | Meets EU Directive 2011/65/EU and JEDEC J-STD-201 Class 2 whisker resistance; supports green manufacturing. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth) on 5 V systems without degradation. |
| Fast response time | <1 ns turn-on enables protection of high-speed logic and microcontroller I/O against ESD (IEC 61000-4-2 ±8 kV contact). |
| Low clamping ratio | VC/VBR ≈ 1.34 - Minimizes overvoltage overshoot during clamping, reducing risk to downstream 5 V tolerant ICs. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Guarding |
|---|---|
Use Scenario: Protecting 5 V supply inputs of engine control units (ECUs) and infotainment modules against ISO 7637-2 load dump and jump-start transients. IC Role / Device Role / Timing Role: Primary clamping TVS placed directly at connector entry point, shunting surge energy to chassis ground before reaching LDOs or PMICs. Use Value: Limits voltage to ≤9.2 V during 65.2 A transients, preventing latch-up or permanent damage to 5 V-rated power management ICs. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA transmitter outputs) in factory automation sensors from induced switching noise and ESD. IC Role / Device Role / Timing Role: Bidirectional-capable variant not used; this unidirectional part protects grounded-signal paths where polarity is fixed and ground-referenced. Use Value: Maintains signal integrity with <800 µA leakage at 5 V, while clamping fast transients before they corrupt ADC reference or op-amp inputs. |
| USB Type-A Port VBUS Protection | DC-DC Converter Feedback Node Clamp |
Use Scenario: Safeguarding 5 V VBUS lines in automotive USB chargers and docking stations against hot-plug spikes and cable discharge events. IC Role / Device Role / Timing Role: Standoff-rated TVS placed between VBUS and GND, acting as last-line defense after upstream fuses and common-mode chokes. Use Value: Clamps hot-plug overshoot to 9.2 V within nanoseconds, meeting USB 2.0 electrical specification limits for connected host controllers. |
Use Scenario: Preventing feedback node corruption in buck converters supplying 5 V to microcontrollers during input rail transients. IC Role / Device Role / Timing Role: Low-capacitance TVS across FB resistor divider to suppress voltage spikes that would cause erroneous regulation or oscillation. Use Value: 1000 pF typical junction capacitance avoids destabilizing compensation networks while providing sub-10 V clamping at feedback pin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ5.0AHE3_B/H | Same electrical specs and SMB package; RoHS-compliant but not halogen-free; lacks HM3 suffix designation. | Approved for commercial-grade automotive use but not certified to halogen-free material requirements. | Select when halogen-free content is not mandated by OEM spec or regional environmental regulations. |
| SMAJ5.0A-M3 | Lower 400 W PPPM rating; SMA (DO-214AC) package with smaller footprint (4.5 × 2.7 mm vs. 5.6 × 3.9 mm); same VWM/VBR/VC. | Suitable for space-constrained consumer PCBs but derates faster under thermal stress due to higher RθJA. | Choose only if board area is critical and peak surge energy remains ≤400 W; verify thermal margin with layout. |
Compared with SMBJ5.0AHM3_B/H, the HE3 variant trades halogen-free compliance for cost-sensitive commercial designs, while the SMAJ5.0A-M3 reduces footprint at the expense of 33 % lower surge power handling and reduced thermal robustness - requiring careful layout validation for automotive or industrial use.
Availability
SMBJ5.0AHM3_B/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and USB power delivery systems requiring stable component supply across extended production lifecycles.
Supply support for SMBJ5.0AHM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, automotive qualification, and high-volume manufacturability.
The SMBJ series is engineered specifically for board-level transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where AEC-Q101 compliance, high surge robustness, and long-term stability are mandatory.
FAQ
What is the polarity configuration of SMBJ5.0AHM3_B/H?
SMBJ5.0AHM3_B/H is a unidirectional TVS diode. Its cathode is marked with a band on the SMB package body and must be connected to the line being protected (e.g., 5 V rail), while the anode connects to ground. This configuration allows conduction only during positive transients relative to ground, matching standard DC power rail protection topology.
Does SMBJ5.0AHM3_B/H meet automotive qualification standards?
Yes, SMBJ5.0AHM3_B/H carries the HM3 suffix, indicating it is halogen-free, RoHS-compliant, and AEC-Q101 qualified. It has passed stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing - validating its suitability for under-hood and chassis-mounted automotive electronics.
What is the maximum clamping voltage of SMBJ5.0AHM3_B/H under surge conditions?
The SMBJ5.0AHM3_B/H clamps to a maximum of 9.2 V when subjected to its rated peak pulse current of 65.2 A (10/1000 µs waveform). This value is measured per standard test conditions and guarantees that protected circuits see no more than 9.2 V during worst-case transient events, preserving 5 V logic and analog components.
Can SMBJ5.0AHM3_B/H replace bidirectional TVS diodes in circuit designs?
No - SMBJ5.0AHM3_B/H is unidirectional and cannot substitute for bidirectional devices like SMBJ5.0CA without redesign. Bidirectional types conduct during both polarities of transients and lack polarity marking; using SMBJ5.0AHM3_B/H in their place leaves negative-going transients unprotected and risks reverse breakdown failure.
What is the thermal resistance and recommended pad layout for SMBJ5.0AHM3_B/H?
SMBJ5.0AHM3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain reliability under repeated surges, use minimum recommended pad dimensions from Vishay's DO-214AA outline drawing and avoid excessive trace narrowing near the device terminals.
SMBJ5.0AHM3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- 9.2V
- Current - Peak Pulse (10/1000µs):
- 65.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ5.0AHM3_B/H FAQ
1.How can I place an order for SMBJ5.0AHM3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ5.0AHM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ5.0AHM3_B/H reliable?
The price and inventory of SMBJ5.0AHM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ5.0AHM3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ5.0AHM3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ5.0AHM3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ5.0AHM3_B/H?
SMBJ5.0AHM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ5.0AHM3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ5.0AHM3_B/H?
For technical support, including SMBJ5.0AHM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ5.0AHM3_B/H requirements.
6.How does Aetrix verify that SMBJ5.0AHM3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ5.0AHM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ5.0AHM3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ5.0AHM3_B/H?
All SMBJ5.0AHM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ5.0AHM3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ5.0AHM3_B/H part is unused and in its original packaging.
Return procedure for SMBJ5.0AHM3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ5.0AHM3_B/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

