Vishay General Semiconductor - Diodes Division SMBJ5.0CAHE3_B/H
- Part No.:
- SMBJ5.0CAHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ5.0CAHE3_B/H.pdf
- Description:
- 600W,5.0V 5%,BIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,510
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Product details
Overview
SMBJ5.0CAHE3_B/H from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal and power lines. It features a 5.0 V stand-off voltage (VWM), 6.4–7.25 V breakdown range (VBR), 600 W peak pulse power (10/1000 μs), and clamps to ≤9.2 V at 65.2 A peak surge current - deployed in sensor interface protection and DC power rail conditioning for industrial and automotive ECUs.
For engineers reviewing the SMBJ5.0CAHE3_B/H datasheet, SMBJ5.0CAHE3_B/H pinout, SMBJ5.0CAHE3_B/H application, or SMBJ5.0CAHE3_B/H equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature limit (TJ max = 150 °C), and bidirectional clamping behavior confirmed per ANSI/IEEE C62.35.
Technical Context
This device operates as a voltage-clamping protector with symmetrical avalanche breakdown in both directions, enabling suppression of positive and negative transients without polarity sensitivity. Its glass-passivated junction ensures stable VBR tolerance (±5% typical) and low leakage (<800 μA at VWM), while the 10/1000 μs waveform rating reflects real-world lightning and inductive-switching surge immunity.
Thermally, it relies on PCB copper pad area (0.2" × 0.2") for heat dissipation, with RθJL = 20 °C/W to lead and derating above TA = 25 °C per Fig. 2. The AEC-Q101 qualification (denoted by HE3 suffix) confirms suitability for automotive under-hood environments where TJ cycling between –55 °C and +150 °C occurs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 5.0 V - Maximum continuous reverse voltage before significant leakage; defines operating margin below clamping threshold. |
| VBR min/max | 6.4 V / 7.25 V - Breakdown initiates within this band at 10 mA test current; ensures predictable turn-on during overvoltage events. |
| VC @ IPPM | ≤9.2 V at 65.2 A - Clamped voltage during 600 W transient; determines maximum stress imposed on downstream ICs. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 μs waveform; validates robustness against IEC 61000-4-5 Level 4 surges. |
| ID @ VWM | ≤800 μA - Reverse leakage at stand-off voltage; critical for low-power sensor and battery-backed circuits. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in engine control units and industrial motor drives. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" pads; informs PCB layout cooling requirements. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional - no polarity marking; symmetrical terminals require no orientation during placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (negative half-cycle) | Accepts reverse surge current during negative transients; electrically identical to cathode in bidirectional mode. |
| Cathode | Transient current entry (positive half-cycle) | Accepts reverse surge current during positive transients; functionally interchangeable with anode due to symmetry. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal lines without external polarity management. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including powertrain and body electronics with full temperature and life-cycle testing. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 4th-level surges (4 kV line-earth, 2 kV line-line) on properly laid out PCBs. |
| Low clamping ratio (VC/VBR ≈ 1.33) | Minimizes overvoltage exposure to protected ICs - e.g., 9.2 V clamp vs. 6.9 V typical VBR improves MOSFET gate safety margin. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns or baking requirements. |
Applications
| Automotive Sensor Interface Protection | Industrial PLC Analog Input Protection |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog front-ends from load dump and ESD in vehicle cabin modules. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed across differential signal pair or supply rail to shunt transients before they reach precision ADCs or transceivers. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V interface ICs during ISO 7637-2 Pulse 5a (load dump) events up to 60 V. |
Use Scenario: Safeguarding 4–20 mA current loop inputs and ±10 V analog inputs in programmable logic controllers exposed to field wiring surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on input terminals, coordinated with series current-limiting resistors and filtering capacitors. Use Value: Limits input voltage to <9.2 V during 1 kV/0.5 J transients, preserving measurement accuracy and preventing op-amp saturation or rail collapse. |
| USB Port ESD Protection | DC Power Rail Conditioning |
Use Scenario: Secondary-level ESD protection on USB 2.0 data lines (D+/D−) in embedded host devices where internal PHY lacks sufficient HBM rating. IC Role / Device Role / Timing Role: Fast-response TVS placed adjacent to connector to absorb ±15 kV contact discharge (IEC 61000-4-2) before energy couples into PHY. Use Value: Achieves sub-nanosecond response with <100 ps turn-on, clamping D+ to <9.2 V while maintaining signal integrity up to 480 Mbps. |
Use Scenario: Input-stage surge suppression on 5 V or 12 V DC rails feeding microcontrollers, PMICs, or memory in edge computing gateways. IC Role / Device Role / Timing Role: Stand-off clamping element placed after bulk capacitance but before LDO regulators to prevent upstream surge propagation. Use Value: Absorbs 600 W transients without failure, limiting rail overshoot to <9.2 V and avoiding brown-out resets or regulator shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ5.0CA-E3/52 | Same electrical specs and SMB package; RoHS-compliant commercial grade (no AEC-Q101 qualification). | Lacks automotive qualification; suitable for consumer or industrial non-safety-critical designs. | Select when AEC-Q101 is not required and cost optimization is prioritized over automotive reliability validation. |
| SAC5.0 | Lower PPPM (400 W), higher VC (11.5 V at 35 A), same VWM/VBR range; SOD-123FL package (smaller footprint, lower thermal mass). | Reduced surge handling and higher clamping voltage; limited to lower-energy transients and space-constrained layouts. | Choose only for compact portable devices with lower surge exposure; avoid in automotive or industrial mains-connected systems. |
Compared with SMBJ5.0CAHE3_B/H, the SMBJ5.0CA-E3/52 offers identical protection performance without automotive qualification, while SAC5.0 trades clamping performance and surge capacity for size reduction - making SMBJ5.0CAHE3_B/H the optimal choice where AEC-Q101 compliance and 600 W capability are mandatory.
Availability
SMBJ5.0CAHE3_B/H is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface protection, and DC power rail conditioning requiring stable component supply across multi-year production cycles.
Supply support for SMBJ5.0CAHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMBJ series targets high-energy transient suppression in harsh environments, with the HE3 variant specifically engineered for automotive-grade durability and long-term stability under thermal cycling and vibration.
FAQ
What does the "CA" suffix mean in SMBJ5.0CAHE3_B/H?
The "CA" suffix denotes a bidirectional configuration - meaning SMBJ5.0CAHE3_B/H provides symmetrical clamping for both positive and negative voltage transients without polarity dependence. Unlike unidirectional variants (e.g., SMBJ5.0A), it has no cathode marking and functions identically in either orientation, making it ideal for AC-coupled or floating signal paths where polarity cannot be guaranteed.
Is SMBJ5.0CAHE3_B/H AEC-Q101 qualified?
Yes, SMBJ5.0CAHE3_B/H is AEC-Q101 qualified, as confirmed by the "HE3" suffix and Vishay documentation (Document Number: 88392, Revision: 09-Jan-2024). This qualification covers temperature cycling, humidity bias, mechanical shock, and high-temperature operating life testing - validating its use in automotive powertrain, chassis, and body electronics where reliability under extended thermal stress is mandatory.
What is the maximum clamping voltage for SMBJ5.0CAHE3_B/H?
The maximum clamping voltage (VC) for SMBJ5.0CAHE3_B/H is 9.2 V at 65.2 A peak pulse current (IPPM), measured with a 10/1000 μs waveform. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring compatibility with 5 V logic interfaces and low-voltage MOSFET gates.
Can SMBJ5.0CAHE3_B/H replace a unidirectional TVS like SMBJ5.0A?
No - SMBJ5.0CAHE3_B/H is not a direct replacement for unidirectional SMBJ5.0A in circuits requiring forward conduction or DC blocking in one direction. While both share VWM and PPPM ratings, SMBJ5.0CAHE3_B/H lacks polarity and conducts in both directions during breakdown. Substitution requires verifying that the application tolerates bidirectional conduction and that no forward-biased DC path is introduced.
What PCB pad layout is recommended for SMBJ5.0CAHE3_B/H?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad area per terminal for SMBJ5.0CAHE3_B/H to achieve rated thermal performance and 600 W pulse power handling. Using smaller pads increases RθJA beyond 100 °C/W, reducing surge current capability and risking thermal runaway during repetitive transients - especially in automotive under-hood applications where ambient temperatures exceed 85 °C.
SMBJ5.0CAHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5V
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- 9.2V
- Current - Peak Pulse (10/1000µs):
- 65.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ5.0CAHE3_B/H FAQ
1.How can I place an order for SMBJ5.0CAHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ5.0CAHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ5.0CAHE3_B/H reliable?
The price and inventory of SMBJ5.0CAHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ5.0CAHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ5.0CAHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ5.0CAHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ5.0CAHE3_B/H?
SMBJ5.0CAHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ5.0CAHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ5.0CAHE3_B/H?
For technical support, including SMBJ5.0CAHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ5.0CAHE3_B/H requirements.
6.How does Aetrix verify that SMBJ5.0CAHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ5.0CAHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ5.0CAHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ5.0CAHE3_B/H?
All SMBJ5.0CAHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ5.0CAHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ5.0CAHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ5.0CAHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ5.0CAHE3_B/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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