My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ5.0HE3/52
;;2.jpg)
- Part No.:
- SMBJ5.0HE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ5.0HE3/52.pdf
- Description:
- TVS DIODE 5VWM 9.6VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,602
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ5.0HE3/52 from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for primary overvoltage protection of DC power rails and signal lines. It features 5.0 V stand-off voltage (VWM), 6.4–7.07 V breakdown voltage (VBR) at 10 mA, 600 W peak pulse power (10/1000 µs), 65.2 V clamping voltage (VC) at 800 A IPPM, and operates across –55 °C to +150 °C junction temperature range - deployed in automotive ECUs, industrial sensor interfaces, and USB power input stages.
For engineers reviewing the SMBJ5.0HE3/52 datasheet, SMBJ5.0HE3/52 pinout, SMBJ5.0HE3/52 application, or SMBJ5.0HE3/52 equivalent, key selection criteria include its AEC-Q101 qualification, low clamping ratio (VC/VBR ≈ 9.2), unidirectional polarity with cathode band marking, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode uses a glass-passivated silicon junction optimized for fast response (<1 ps) to transient surges, enabling effective suppression of ESD (IEC 61000-4-2), EFT (IEC 61000-4-4), and lightning-induced spikes (IEC 61000-4-5). Its low incremental surge resistance (≈0.08 Ω derived from VC/IPPM) ensures minimal voltage overshoot during high-current transients.
The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits a positive temperature coefficient of VBR (+0.057 %/°C), supporting stable clamping performance across wide thermal operating ranges in under-hood and factory-floor environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 5.0 V - Maximum continuous reverse working voltage before significant leakage; defines safe DC rail operating margin. |
| VBR (min/max) | 6.4 V / 7.07 V at IT = 10 mA - Confirmed breakdown threshold range; ensures reliable turn-on above normal operating voltage. |
| VC @ IPPM | 65.2 V at 800 A (10/1000 µs) - Clamped voltage seen by protected IC during worst-case surge; limits stress on downstream components. |
| PPPM | 600 W - Peak transient energy handling capability; supports robust protection against IEC 61000-4-5 Level 4 surges. |
| ID @ VWM | 800 µA max - Reverse leakage at stand-off voltage; low enough to avoid loading 5 V logic or sensor supply rails. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in high-ambient automotive and industrial power modules. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including HTOL, TC, and HTRB testing per AEC standard. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads; meets UL 94 V-0 flammability rating and J-STD-002 solderability requirements. Cathode indicated by band marking on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias | Connected to ground or lower-potential node in unidirectional clamp configuration. |
| Cathode | Current exit terminal in forward bias; marked with band | Connected to protected line (e.g., 5 V rail); conducts surge current to ground when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements - suitable for engine control, ADAS, and body electronics. |
| 600 W peak pulse power (10/1000 µs) | Withstands high-energy transients common in 12 V/24 V vehicle electrical systems and industrial motor drives. |
| Low clamping voltage (65.2 V @ 800 A) | Minimizes overvoltage exposure to protected MOSFETs, microcontrollers, and interface ICs during surge events. |
| Glass passivated chip junction | Enhances long-term reliability and moisture resistance versus epoxy-passivated alternatives in humid or condensing environments. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free PCB assembly processes without pre-baking or special handling. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
Use Scenario: 5 V power rail feeding an automotive camera module exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VIN and GND to clamp transients before they reach the PMIC and image sensor. Use Value: Limits voltage excursion to ≤65.2 V during 800 A surges, preserving integrity of 5 V tolerant analog front-end circuitry. |
Use Scenario: Analog output line (0–5 V) from a pressure sensor in a factory PLC I/O module. IC Role / Device Role / Timing Role: TVS connected across signal and ground to suppress ESD and switching noise coupled from adjacent relay outputs. Use Value: Sub-nanosecond response prevents latch-up in op-amp buffers and maintains signal fidelity below 5.0 V stand-off threshold. |
| USB Type-C VBUS Surge Guard | DC-DC Converter Input Stage Clamp |
Use Scenario: VBUS line (5 V nominal) in a USB-C port on a portable medical device subject to hot-plug ESD. IC Role / Device Role / Timing Role: Primary TVS on VBUS path, upstream of USB PD controller and load switch. Use Value: Clamps 15 kV contact ESD to <65.2 V within <1 ps, preventing damage to USB enumeration circuitry and maintaining compliance. |
Use Scenario: Input of a 5 V buck converter powered from a noisy 12 V automotive battery rail. IC Role / Device Role / Timing Role: TVS placed directly at converter input capacitor to absorb inductive kickback from upstream fuse or relay switching. Use Value: Absorbs 600 W transient energy without degradation, ensuring stable 5 V output during ignition transients and jump-start events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ5.0A-E3/52 | No AEC-Q101 qualification; commercial grade only | Not approved for automotive production; limited to consumer or industrial non-safety-critical use | Select when AEC-Q101 is not required and cost sensitivity outweighs automotive reliability needs. |
| SMCJ5.0AHE3/52 | Larger SMC (DO-214AB) package; 1500 W PPPM rating; same VWM/VBR/VC specs | Higher surge capacity but requires larger PCB footprint; suited for higher-energy threat environments | Choose when system-level surge testing exceeds IEC 61000-4-5 Level 4 and board space permits larger package. |
Compared with SMBJ5.0A-E3/52, the SMBJ5.0HE3/52 adds automotive qualification without altering electrical specs; versus SMCJ5.0AHE3/52, it trades surge capacity for compact SMB footprint - critical for space-constrained ECU and sensor modules.
Availability
SMBJ5.0HE3/52 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and USB power input protection requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBJ5.0HE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets high-reliability transient suppression in automotive, industrial, and communications infrastructure - engineered for fast clamping, low leakage, and robust surge endurance in harsh environments.
FAQ
What is the clamping voltage of SMBJ5.0HE3/52 at its rated peak pulse current?
The SMBJ5.0HE3/52 has a maximum clamping voltage (VC) of 65.2 V when subjected to its rated peak pulse current (IPPM) of 800 A under the standardized 10/1000 µs waveform. This value is measured at TJ = 25 °C and defines the upper voltage limit imposed on protected circuitry during surge events - a critical parameter for ensuring downstream ICs remain within absolute maximum ratings. The SMBJ5.0HE3/52 maintains this clamping performance across its full operating temperature range.
Is SMBJ5.0HE3/52 suitable for automotive applications?
Yes, SMBJ5.0HE3/52 is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature operating life, temperature cycling, and humidity bias HAST - specifically validated for automotive under-hood and cabin electronics. Its construction, thermal rating (TJ max = +150 °C), and RoHS-compliant HE3 suffix confirm suitability for production automotive systems. The SMBJ5.0HE3/52 is commonly used in body control modules, infotainment power supplies, and ADAS sensor interfaces.
How does the SMBJ5.0HE3/52 differ from the SMBJ5.0A-E3/52?
The SMBJ5.0HE3/52 and SMBJ5.0A-E3/52 share identical electrical specifications (VWM = 5.0 V, VBR = 6.4–7.07 V, VC = 65.2 V, PPPM = 600 W) and SMB package, but differ in qualification and material compliance. SMBJ5.0HE3/52 carries AEC-Q101 qualification and is RoHS-compliant; SMBJ5.0A-E3/52 is commercial-grade only, lacking automotive validation. Both use matte tin-plated leads and meet MSL Level 1, but only SMBJ5.0HE3/52 is approved for automotive production use.
What is the reverse leakage current of SMBJ5.0HE3/52 at its stand-off voltage?
At its maximum reverse stand-off voltage (VWM) of 5.0 V and TA = 25 °C, the SMBJ5.0HE3/52 exhibits a maximum reverse leakage current (ID) of 800 µA. This low leakage ensures minimal power loss and avoids unintended loading of 5 V supply rails or high-impedance sensor outputs. Leakage remains within specification up to +125 °C ambient, supporting reliable operation in thermally demanding environments where the SMBJ5.0HE3/52 is deployed.
Does SMBJ5.0HE3/52 have polarity marking, and how is it oriented in circuit?
Yes, SMBJ5.0HE3/52 is unidirectional and features a cathode band marking on the package body - the banded end is the cathode terminal. In circuit, the cathode connects to the line being protected (e.g., 5 V rail), and the anode connects to ground. This orientation allows the device to conduct surge current from the protected line to ground when transient voltage exceeds VBR, while blocking normal 5 V DC operation. The SMBJ5.0HE3/52 must not be installed in reverse, as it would short the rail.
SMBJ5.0HE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V
- Voltage - Breakdown (Min):
- 6.4V
- Voltage - Clamping (Max) @ Ipp:
- 9.6V
- Current - Peak Pulse (10/1000µs):
- 62.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ5.0HE3/52 FAQ
1.How can I place an order for SMBJ5.0HE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ5.0HE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ5.0HE3/52 reliable?
The price and inventory of SMBJ5.0HE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ5.0HE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ5.0HE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ5.0HE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ5.0HE3/52?
SMBJ5.0HE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ5.0HE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ5.0HE3/52?
For technical support, including SMBJ5.0HE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ5.0HE3/52 requirements.
6.How does Aetrix verify that SMBJ5.0HE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ5.0HE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ5.0HE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ5.0HE3/52?
All SMBJ5.0HE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ5.0HE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ5.0HE3/52 part is unused and in its original packaging.
Return procedure for SMBJ5.0HE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ5.0HE3/52 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
