Vishay General Semiconductor - Diodes Division SMBJ51AHE3/5B
- Part No.:
- SMBJ51AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51AHE3/5B.pdf
- Description:
- TVS DIODE 51VWM 82.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ51AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 51 V standoff voltage (VWM), 56.7–62.7 V breakdown range at 1 mA, 82.4 V clamping voltage at 7.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform-used to safeguard MOSFETs, microcontrollers, and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ51AHE3/5B datasheet, SMBJ51AHE3/5B pinout, SMBJ51AHE3/5B application, or SMBJ51AHE3/5B equivalent, key selection criteria include clamping performance under 7.3 A surge, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, unidirectional polarity marking, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches rapidly (<1 ps response) to divert transient energy away from downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1.0 µA at 51 V).
The device is rated for repetitive 600 W pulses (10/1000 µs, 0.01% duty cycle), derated above 25 °C per Fig. 2, and supports peak forward surge current up to 100 A (8.3 ms half-sine). It meets MSL Level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 48 V systems. |
| VBR @ IT = 1 mA | 56.7–62.7 V - guaranteed breakdown range; ensures consistent triggering across temperature and unit variation. |
| VC @ IPPM = 7.3 A | 82.4 V - clamping voltage during 10/1000 µs surge; limits stress on protected ICs to ≤82.4 V. |
| PPPM | 600 W - peak pulse power handling; enables protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 48 V lines. |
| IFSM | 100 A - non-repetitive forward surge rating; supports high-energy inductive switch-off events without failure. |
| RθJA | 100 °C/W - junction-to-ambient thermal resistance on standard 0.2″ × 0.2″ pads; informs PCB thermal design for sustained power dissipation. |
| TJ max | +150 °C - maximum junction temperature; allows operation in under-hood automotive or industrial enclosures. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts avalanche current to ground during overvoltage event. |
| Anode (unbanded end) | Reference node | Typically tied to system ground or low-impedance return path; completes shunt conduction loop. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements-enables use in ADAS ECUs and body control modules without requalification. |
| 600 W peak pulse power (10/1000 µs) | Withstands repeated lightning-induced transients per ISO 7637-2 Pulse 3b and IEC 61000-4-5 Combination Wave (4 kV/2 Ω) on 48 V supply rails. |
| Low clamping ratio (VC/VBR ≈ 1.33) | Minimizes overvoltage overshoot during clamping-critical for protecting 60 V-rated MOSFETs and 5 V/3.3 V logic interfaces. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns-reduces manufacturing risk and bake requirements. |
| Glass passivated junction | Ensures long-term stability of breakdown voltage and leakage current across temperature cycling and humidity exposure. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of gate drivers and MCU I/O against inductive kickback from 24–48 V solenoid and relay coils. IC Role / Device Role / Timing Role: Shunt TVS placed directly across coil supply rail or driver output to clamp transients within 1 ns. Use Value: Limits voltage excursion to ≤82.4 V, preventing gate oxide rupture in 100 V MOSFETs and latch-up in 3.3 V microcontroller GPIOs. |
Use Scenario: Safeguarding LIN bus transceivers and power window motor controllers from load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional TVS connected between VBAT and ground to absorb 12 V system transients up to 600 W. Use Value: Maintains <1 µA leakage at 13.5 V nominal battery, ensuring low quiescent current while meeting ISO 16750-2 pulse 5a requirements. |
| Telecom Power Supplies | Industrial Sensor Signal Conditioning |
|
Use Scenario: Input-stage protection for 48 V PoE-powered equipment against Ethernet cable ESD and surge coupling. IC Role / Device Role / Timing Role: Primary TVS on DC input rail upstream of DC/DC converter, sized for 600 W pulse handling. Use Value: Clamps 4 kV IEC 61000-4-5 surges to 82.4 V, allowing downstream converters with 100 V input rating to remain functional. |
Use Scenario: Protection of analog front-end inputs (e.g., 4–20 mA loops, thermocouple amplifiers) from field wiring transients. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS placed at connector entry point to shunt fast-rising spikes. Use Value: Adds <0.5 pF typical junction capacitance (per Fig. 4), preserving signal integrity for kHz-range sensor signals without filtering distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51A-E3/5B | No AEC-Q101 qualification; commercial-grade only; identical electrical specs and SMB package. | Suitable for non-automotive industrial or telecom use where automotive reliability testing is not required. | Select when cost sensitivity outweighs automotive qualification needs and full traceability is not mandated. |
| SMCJ51AHE3/5B | Same VWM/VC but higher 1500 W PPPM; larger SMC (DO-214AB) package (7.11 mm × 6.22 mm vs. 4.57 mm × 3.94 mm). | Used where higher surge margin is needed (e.g., outdoor power supplies), accepting larger board area and different pad layout. | Choose when system-level surge testing exceeds 600 W and PCB space permits larger footprint. |
Compared with SMBJ51AHE3/5B, SMBJ51A-E3/5B offers identical protection performance at lower cost but lacks automotive qualification, while SMCJ51AHE3/5B delivers 2.5× higher surge capacity in a physically larger package requiring layout revision.
Availability
SMBJ51AHE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and telecom power supplies requiring stable component supply with AEC-Q101 compliance and RoHS/halogen-free assurance.
Supply support for SMBJ51AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on reliability, power handling, and automotive qualification.
The SMBJ series targets high-reliability transient suppression in space-constrained SMT applications, specifically engineered for automotive, industrial, and telecom systems demanding AEC-Q101 validation and stable clamping performance.
FAQ
What is the clamping voltage of SMBJ51AHE3/5B at its rated peak pulse current?
The SMBJ51AHE3/5B has a maximum clamping voltage (VC) of 82.4 V at 7.3 A peak pulse current (IPPM) under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ51AHE3/5B maintains this clamping performance across its specified operating temperature range and is validated in Vishay's characterization data on page 2 of document 88392.
Is SMBJ51AHE3/5B qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SMBJ51AHE3/5B is AEC-Q101 qualified, as confirmed by the "HE3" suffix and footnote (1) on page 3 of the Vishay datasheet. This qualification means the device has passed stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing-making it suitable for under-hood and chassis-mounted automotive applications such as body control modules and power distribution units. The SMBJ51AHE3/5B meets these requirements without derating in ambient temperatures up to +125 °C.
How does the SMBJ51AHE3/5B differ from bidirectional variants like SMBJ51CA?
The SMBJ51AHE3/5B is unidirectional, meaning it conducts only in reverse bias above VBR and blocks forward current beyond ~3.5 V (VF max at 50 A). In contrast, SMBJ51CA is bidirectional with symmetrical clamping in both polarities-used for AC lines or differential signal protection. The SMBJ51AHE3/5B includes a cathode band for polarity identification, whereas SMBJ51CA has no marking. Electrical parameters like VWM and VC are otherwise matched for equivalent voltage ratings.
What is the thermal resistance and how does it affect PCB layout for SMBJ51AHE3/5B?
The SMBJ51AHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2″ × 0.2″ (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the Thermal Characteristics table. This value assumes minimal copper area; increasing pad size or adding internal ground planes reduces RθJA and improves power handling during repetitive surges. For continuous 5.0 W dissipation, the SMBJ51AHE3/5B requires careful thermal design to keep TJ below 150 °C-especially in enclosed industrial enclosures.
Can SMBJ51AHE3/5B be used in place of older SMBJ51A parts without design changes?
Yes, SMBJ51AHE3/5B is a direct replacement for legacy SMBJ51A variants in the same SMB package, retaining identical pinout, electrical specifications, and mechanical dimensions. The "HE3" suffix indicates AEC-Q101 qualification and RoHS compliance, while the "/5B" denotes 13″ tape-and-reel packaging (3200 units). No PCB layout or schematic changes are required when upgrading to SMBJ51AHE3/5B, and it maintains full compatibility with existing reflow profiles and automated placement equipment.
SMBJ51AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 7.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ51AHE3/5B FAQ
1.How can I place an order for SMBJ51AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51AHE3/5B reliable?
The price and inventory of SMBJ51AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ51AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51AHE3/5B?
SMBJ51AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51AHE3/5B?
For technical support, including SMBJ51AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51AHE3/5B requirements.
6.How does Aetrix verify that SMBJ51AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ51AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ51AHE3/5B?
All SMBJ51AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51AHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ51AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ51AHE3/5B Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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