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Vishay General Semiconductor - Diodes Division SMBJ51AHE3_A/H
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- Part No.:
- SMBJ51AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51AHE3_A/H.pdf
- Description:
- TVS DIODE 51VWM 82.4VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,629
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Product details
Overview
SMBJ51AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 51 V stand-off voltage (VWM), 56.7–62.7 V breakdown voltage (VBR) at 1 mA, 82.4 V maximum clamping voltage (VC) at 7.3 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), commonly deployed to protect MOSFET gates and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ51AHE3_A/H datasheet, SMBJ51AHE3_A/H pinout, SMBJ51AHE3_A/H application, or SMBJ51AHE3_A/H equivalent, key selection criteria include clamping voltage margin relative to protected IC's absolute maximum rating, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, unidirectional polarity marking, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device: under normal conditions it presents high impedance (>1 µA leakage at 51 V), but triggers into low-impedance conduction when reverse voltage exceeds its 56.7–62.7 V breakdown range, limiting transient energy to safe levels via controlled avalanche. Its glass-passivated junction ensures stable VBR tolerance and long-term reliability under repetitive surge stress.
The SMBJ51AHE3_A/H is rated for 100 A non-repetitive forward surge (IFSM, 8.3 ms half-sine), supports operating junction temperatures from –55 °C to +150 °C, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - Maximum continuous reverse working voltage before significant leakage; defines upper limit of normal operating range. |
| VBR min/max | 56.7 V / 62.7 V at 1 mA - Breakdown onset range; determines minimum overvoltage threshold for clamping activation. |
| VC @ IPPM | 82.4 V at 7.3 A - Clamped voltage during 10/1000 µs surge; must stay below protected device's absolute max rating. |
| PPPM | 600 W - Peak pulse power handling capability; defines transient energy absorption capacity under standardized waveform. |
| ID @ VWM | 1.0 µA - Reverse leakage current at rated stand-off voltage; impacts quiescent power loss and noise coupling. |
| TJ max | +150 °C - Maximum junction temperature; sets thermal derating boundary for sustained power dissipation. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance; used to calculate temperature rise under DC or repetitive pulse loads. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads. Cathode indicated by band marking on one end; anode is unmarked end. Complies with UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts avalanche current to ground during overvoltage events. |
| Anode (unbanded end) | Reference/return path | Typically tied to system ground or lower-potential rail; completes clamping current path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance per stress test plan. |
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV line-earth) without derating on standard PCB layouts. |
| Low clamping ratio (VC/VBR ≈ 1.33) | Minimizes overvoltage overshoot during clamping-critical for safeguarding 60 V-rated MOSFETs and microcontrollers. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow profile (peak 260 °C) without baking preconditioning. |
| Glass passivated junction | Ensures stable VBR over time and temperature, low leakage drift, and resistance to humidity-induced degradation. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of gate drivers and IGBT sense lines against inductive switching spikes from relay coils and solenoids. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between gate and source, absorbing >100 V transients within nanoseconds. Use Value: Prevents gate oxide rupture in 60 V-rated MOSFETs by limiting voltage to ≤82.4 V during 7.3 A surge events. |
Use Scenario: Shielding LIN bus transceivers and door lock actuator drivers from load dump and jump-start transients. IC Role / Device Role / Timing Role: Standoff protection on 12 V supply rail upstream of LDO regulators and CAN/LIN interface ICs. Use Value: Maintains <1 µA leakage at 51 V to avoid battery drain while clamping 100 V/100 ms load dump to <85 V. |
| Telecom Power Supplies | Industrial Sensor Signal Conditioning |
|
Use Scenario: Input-stage surge suppression on 48 V telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary TVS on DC input before DC-DC converters and hot-swap controllers. Use Value: Absorbs 600 W pulses without failure, enabling compliance with ITU-T K.20/21 immunity requirements. |
Use Scenario: Protecting analog front-end inputs of pressure/temperature sensors connected to long cables in factory automation. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF) unidirectional clamp on 0–5 V sensor output lines. Use Value: Limits ESD-induced latch-up risk with <1 µA leakage and sub-10 ns response, preserving signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51AHM3_A/H | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free material compliance is mandated (e.g., EU automotive Tier 1). | Direct drop-in replacement if halogen-free requirement applies; same footprint, thermal, and electrical behavior. |
| SMCJ51AHE3_A/H | Same VWM/VBR/VC specs but in larger SMC (DO-214AB) package with higher RθJA (50 °C/W) and 1500 W PPPM rating. | Used where higher single-pulse energy handling or improved thermal performance is required on high-current rails. | Not pin-compatible-requires PCB layout change-but offers 2.5× pulse power headroom for demanding surge environments. |
Compared with SMBJ51AHE3_A/H, SMBJ51AHM3_A/H provides identical protection performance with halogen-free construction, while SMCJ51AHE3_A/H delivers greater surge robustness in a physically larger package requiring board redesign.
Availability
SMBJ51AHE3_A/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and telecom power supplies requiring stable component supply with AEC-Q101 assurance and SMT production readiness.
Supply support for SMBJ51AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in space-constrained SMT applications across automotive, industrial, and telecom systems-balancing low profile, high pulse power, and AEC-Q101 compliance.
FAQ
What is the clamping voltage of SMBJ51AHE3_A/H at its rated peak pulse current?
The SMBJ51AHE3_A/H has a maximum clamping voltage (VC) of 82.4 V when subjected to its specified peak pulse current (IPPM) of 7.3 A under a 10/1000 µs waveform. This value is measured at the device terminals and defines the upper voltage limit imposed on the protected circuit during surge events, ensuring compatibility with 60 V-rated downstream components.
Is SMBJ51AHE3_A/H qualified for automotive applications?
Yes, SMBJ51AHE3_A/H is AEC-Q101 qualified, as confirmed in Vishay's ordering information and mechanical data section. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and surge endurance-making it suitable for use in automotive body control modules, lighting systems, and infotainment power rails.
How does the SMBJ51AHE3_A/H differ from bidirectional variants like SMBJ51CA?
The SMBJ51AHE3_A/H is unidirectional, with cathode marked by a band and intended for DC line protection where polarity is fixed. In contrast, SMBJ51CA is bidirectional, lacks polarity marking, and clamps transients in both directions-used in AC-coupled or floating signal lines. Their VBR and VC values differ: SMBJ51CA has symmetric breakdown and higher clamping due to dual-junction structure.
What is the thermal resistance and maximum junction temperature of SMBJ51AHE3_A/H?
SMBJ51AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads, and a maximum operating junction temperature (TJ max) of +150 °C. These parameters govern steady-state power dissipation limits and require thermal derating above 25 °C ambient per Figure 2 in the datasheet.
Does SMBJ51AHE3_A/H meet moisture sensitivity level (MSL) requirements for lead-free reflow?
Yes, SMBJ51AHE3_A/H meets MSL Level 1 per J-STD-020, with a maximum reflow peak temperature of 260 °C. This allows indefinite floor life and eliminates the need for baking prior to assembly, supporting high-yield, lead-free SMT processes without moisture-related popcorning risks.
SMBJ51AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 7.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ51AHE3_A/H FAQ
1.How can I place an order for SMBJ51AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51AHE3_A/H reliable?
The price and inventory of SMBJ51AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ51AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51AHE3_A/H?
SMBJ51AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51AHE3_A/H?
For technical support, including SMBJ51AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51AHE3_A/H requirements.
6.How does Aetrix verify that SMBJ51AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ51AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ51AHE3_A/H?
All SMBJ51AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51AHE3_A/H part is unused and in its original packaging.
Return procedure for SMBJ51AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ51AHE3_A/H Tags
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