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Vishay General Semiconductor - Diodes Division SMBJ51AHE3_A/I
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- Part No.:
- SMBJ51AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51AHE3_A/I.pdf
- Description:
- TVS DIODE 51VWM 82.4VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,256
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Product details
Overview
SMBJ51AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 51 V standoff voltage (VWM), 56.7–62.7 V breakdown voltage (VBR) at 1 mA, 82.4 V maximum clamping voltage (VC) at 7.3 A peak pulse current, and 600 W peak pulse power rating with a 10/1000 µs waveform - deployed on power rails and signal lines in automotive ECUs and industrial sensor interfaces.
For engineers reviewing the SMBJ51AHE3_A/I datasheet, SMBJ51AHE3_A/I pinout, SMBJ51AHE3_A/I application, or SMBJ51AHE3_A/I equivalent, this AEC-Q101 qualified TVS offers verified clamping performance, low incremental surge resistance, and RoHS-compliant matte tin-plated leads suitable for automated SMT assembly in high-reliability designs requiring transient immunity per IEC 61000-4-5.
Technical Context
This unidirectional TVS operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (<1 µA leakage at 51 V), then rapidly avalanches below 62.7 V to clamp transients. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns), while the SMB package provides thermal resistance of 20 °C/W (junction-to-lead) and supports 100 A non-repetitive forward surge current (IFSM).
The device is rated for continuous operation from −55 °C to +150 °C junction temperature, meets MSL Level 1 per J-STD-020 (peak reflow 260 °C), and is qualified to AEC-Q101 for automotive use - confirmed by the "HE3" suffix and ordering code "SMBJ51AHE3_A/I", indicating RoHS-compliant, halogen-free, and automotive-grade qualification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 51 V - Maximum continuous reverse voltage before significant conduction begins; defines operating margin for protected circuit. |
| VBR (Breakdown Voltage) | 56.7–62.7 V at 1 mA - Confirmed avalanche onset range; ensures reliable triggering above system nominal voltage. |
| VC (Clamping Voltage) | 82.4 V at 7.3 A (10/1000 µs) - Peak voltage seen by downstream circuit during worst-case surge; limits stress on ICs/MOSFETs. |
| PPPM (Peak Pulse Power) | 600 W - Sustains standardized 10/1000 µs surge without failure; enables protection against IEC 61000-4-5 Level 4 transients. |
| IPPM (Peak Pulse Current) | 7.3 A - Maximum transient current diverted during clamping; derived from VC and PPPM (P = V × I). |
| TJmax | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and industrial environments. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with IPC-7351B land patterns. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode indicated by a band on the body; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during transient events. |
| Cathode | High-side protected node terminal | Connected to line being protected (e.g., 51 V rail); avalanche conduction occurs from cathode to anode when VIN exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, ADAS sensors, and infotainment power rails. |
| 600 W peak pulse power (10/1000 µs) | Withstands repeated lightning-induced surges per IEC 61000-4-5 without degradation. |
| 82.4 V clamping at 7.3 A | Ensures downstream 60 V-rated MOSFETs and microcontrollers remain within safe operating area during transients. |
| MSL Level 1 moisture sensitivity | Enables standard reflow soldering without pre-bake; supports high-yield automated SMT production. |
| Glass passivated junction | Delivers stable VBR tolerance and long-term reliability under thermal cycling and humidity stress. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 48 V battery-supplied ECU power inputs from load-dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VBAT and GND, clamping spikes >62.7 V to ≤82.4 V. Use Value: Prevents latch-up or gate oxide damage in PMICs and CAN transceivers during ISO 7637-2 Pulse 5a events. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) from ESD and inductive switching noise in factory automation. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted at connector entry point, referenced to local ground. Use Value: Maintains signal integrity with <1 µA leakage at 51 V, avoiding offset errors in precision 16-bit DAC outputs. |
| Telecom DC Power Input Protection | Consumer USB-C Power Delivery Clamp |
|
Use Scenario: Safeguarding PoE-powered network switches against induced surges on 57 V DC input lines. IC Role / Device Role / Timing Role: Primary-level TVS upstream of DC-DC converter, sized for 600 W surge handling. Use Value: Survives multiple 10/1000 µs transients up to 7.3 A without parameter shift, ensuring field-replaceable unit longevity. |
Use Scenario: Secondary-side clamping on USB-C VBUS lines after buck-boost regulation in portable chargers. IC Role / Device Role / Timing Role: Fast-response unidirectional TVS limiting voltage excursions during hot-plug or cable fault events. Use Value: Clamps to 82.4 V before overvoltage triggers OVP shutdown in USB PD controllers, preserving charging session continuity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51A-E3/52 | Commercial-grade (non-AEC-Q101), same electrical specs and SMB package. | Lacks automotive qualification; suitable for industrial/commercial power supplies but not under-hood ECUs. | Select when AEC-Q101 is not required and cost optimization is prioritized. |
| SMCJ51AHE3_A/I | Same AEC-Q101 qualification and VWM/VC, but in larger SMC (DO-214AB) package with 1500 W PPPM. | Higher surge capacity suits higher-energy threats (e.g., ISO 7637-2 Pulse 1); requires larger PCB area. | Choose when system-level testing reveals 600 W insufficient and layout allows SMC footprint. |
Compared with SMBJ51A-E3/52, the SMBJ51AHE3_A/I adds automotive qualification and tighter process controls without altering clamping behavior; versus SMCJ51AHE3_A/I, it trades surge margin for space-constrained layouts where 600 W meets IEC 61000-4-5 Level 4 requirements.
Availability
SMBJ51AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, telecom DC power inputs, and USB-C power delivery systems requiring stable component supply across extended product lifecycles.
Supply support for SMBJ51AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.
The SMBJ series was developed for high-volume, space-constrained transient protection in automotive and industrial systems - delivering AEC-Q101 qualified robustness in the compact SMB footprint.
FAQ
What is the clamping voltage of SMBJ51AHE3_A/I at its rated peak pulse current?
The SMBJ51AHE3_A/I has a maximum clamping voltage (VC) of 82.4 V at 7.3 A peak pulse current with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ51AHE3_A/I maintains this clamping performance across its qualified temperature range (−55 °C to +150 °C) and is validated per AEC-Q101 stress tests.
Is SMBJ51AHE3_A/I suitable for automotive applications?
Yes, SMBJ51AHE3_A/I is explicitly AEC-Q101 qualified, as confirmed by the "HE3" suffix and ordering code "SMBJ51AHE3_A/I". It undergoes stress testing for temperature cycling, humidity, mechanical shock, and high-temperature operating life - making it suitable for under-hood ECUs, ADAS camera modules, and body control units. The SMBJ51AHE3_A/I meets automotive-grade material and plating requirements including halogen-free and RoHS compliance.
What does the "A/I" suffix in SMBJ51AHE3_A/I indicate?
The "A/I" suffix in SMBJ51AHE3_A/I specifies packaging and reel configuration: "A" denotes the revision code (per Vishay's document 88392, Rev. 09-Jan-2024), and "I" indicates 13-inch diameter plastic tape and reel with 3200 units per reel. This matches the ordering information table in the datasheet and ensures compatibility with high-speed pick-and-place equipment used in automotive electronics manufacturing.
How does SMBJ51AHE3_A/I differ from bidirectional variants like SMBJ51CA?
The SMBJ51AHE3_A/I is unidirectional, with polarity marked by a cathode band and intended for DC line protection where reverse voltage is blocked. In contrast, SMBJ51CA is bidirectional, symmetrical in both directions, and used in AC or floating signal paths. Their VBR and VC values differ: SMBJ51AHE3_A/I has 56.7–62.7 V VBR, while SMBJ51CA has 64.4–71.2 V VBR (min/max). The SMBJ51AHE3_A/I cannot substitute for SMBJ51CA without circuit redesign.
What is the thermal resistance of SMBJ51AHE3_A/I, and how does it affect PCB layout?
The SMBJ51AHE3_A/I has a typical junction-to-lead thermal resistance (RθJL) of 20 °C/W and junction-to-ambient (RθJA) of 100 °C/W on standard 0.2" × 0.2" copper pads. For sustained power dissipation, PCB layout must provide adequate copper area and thermal vias to manage heat - especially critical in automotive applications where ambient temperatures exceed 105 °C. The SMBJ51AHE3_A/I's RθJL enables effective heat transfer to the PCB ground plane when leads are properly thermally anchored.
SMBJ51AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 7.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ51AHE3_A/I FAQ
1.How can I place an order for SMBJ51AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51AHE3_A/I reliable?
The price and inventory of SMBJ51AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ51AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51AHE3_A/I?
SMBJ51AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51AHE3_A/I?
For technical support, including SMBJ51AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ51AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ51AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ51AHE3_A/I?
All SMBJ51AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ51AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ51AHE3_A/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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