Vishay General Semiconductor - Diodes Division SMBJ51CD-M3/H
- Part No.:
- SMBJ51CD-M3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51CD-M3/H.pdf
- Description:
- TVS DIODE 51VWM 81.2VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,225
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Product details
Overview
SMBJ51CD-M3/H from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal or power lines. It features a 51 V stand-off voltage (VWM), 57.6–61.8 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 μs), and clamps to ≤81.2 V at 7.4 A peak surge current - deployed in industrial sensor interfaces and telecom line protection.
For engineers reviewing the SMBJ51CD-M3/H datasheet, SMBJ51CD-M3/H pinout, SMBJ51CD-M3/H application, or SMBJ51CD-M3/H equivalent, key selection criteria include bidirectional clamping capability, ±3.5 % VBR tolerance, low leakage (<0.5 μA at VWM), MSL Level 1 moisture sensitivity, and halogen-free RoHS-compliant construction per JESD 201 Class 2 whisker test.
Technical Context
This device operates as a voltage-clamping protector with symmetrical reverse/forward conduction behavior due to its bidirectional architecture. It responds to transient overvoltages within picoseconds and maintains stable clamping performance across -55 °C to +150 °C junction temperature range.
Its thermal resistance is 125 °C/W (junction-to-ambient, mounted on minimum pad layout) and 20 °C/W (junction-to-mount), supporting reliable operation under repetitive surge conditions when properly heatsinked. The 10/1000 μs waveform rating reflects standardized IEC 61000-4-5 surge immunity testing compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - maximum continuous reverse operating voltage before significant leakage begins |
| VBR min/max | 57.6 V / 61.8 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | ≤81.2 V at 7.4 A - clamping voltage defines worst-case voltage seen by protected circuit during surge |
| PPPM | 600 W (10/1000 μs) - peak surge energy handling capacity for transient suppression |
| ID @ VWM | ≤0.5 μA - ultra-low leakage preserves signal integrity and minimizes standby power loss |
| TJ max | +150 °C - enables use in high-temperature industrial and automotive under-hood environments |
| Package | SMB (DO-214AA) - industry-standard surface-mount outline with 5.59 mm × 4.06 mm footprint |
Pinout & Package
Two-terminal device in SMB (DO-214AA) package; no polarity marking for bidirectional operation. Terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102, with M3 suffix indicating halogen-free, RoHS-compliant, industrial-grade construction meeting JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient conduction path | Both terminals function identically; no cathode band - enables flexible PCB layout without orientation constraints |
| Case (body) | Thermal and mechanical interface | Plastic molding meets UL 94 V-0; thermal path optimized via copper pad layout per datasheet Fig. 4 |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or differential signal lines without polarity concerns |
| ±3.5 % VBR tolerance | Reduces design margin overhead and improves consistency in multi-channel protection schemes |
| 600 W peak pulse rating | Meets IEC 61000-4-5 Level 4 (4 kV) surge requirements for industrial Ethernet and RS-485 interfaces |
| MSL Level 1 rating | Allows unlimited floor life and reflow at 260 °C peak - compatible with standard SMT assembly processes |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ESD, inductive switching) |
Applications
| Industrial Sensor Interface | Telecom Line Protection |
|---|---|
Use Scenario: Protecting analog output lines of pressure/temperature sensors in factory automation PLC modules exposed to relay coil flyback and motor drive noise. IC Role / Device Role / Timing Role: Voltage clamping element placed directly at connector entry point to shunt transients before reaching ADC input or op-amp buffer. Use Value: Limits induced surges to ≤81.2 V, preventing latch-up or damage to 24 V-rated signal conditioning ICs while maintaining <0.5 μA leakage at 51 V nominal bus voltage. |
Use Scenario: Safeguarding RS-485 transceivers in base station backhaul links subjected to lightning-induced surges on long outdoor cable runs. IC Role / Device Role / Timing Role: Bidirectional TVS placed across differential pair (A/B) and shield to ground to suppress common-mode and differential-mode transients simultaneously. Use Value: Clamps 10/1000 μs surges up to 7.4 A without degradation, preserving signal integrity over 120 Ω impedance while meeting GR-1089-CORE telecom surge immunity requirements. |
| Automotive Body Control Module | Consumer USB Power Delivery |
Use Scenario: Guarding LIN bus transceivers and microcontroller GPIOs against load dump and jump-start transients in vehicle door modules. IC Role / Device Role / Timing Role: Primary front-end clamp on 12 V supply rail and LIN signal line, coordinated with downstream ceramic capacitors for sub-100 ns response. Use Value: Withstands 150 °C junction temperature and delivers 600 W pulse power - compliant with ISO 7637-2 Pulse 1/2/5a stress profiles for 12 V systems. |
Use Scenario: Providing secondary-level overvoltage protection on USB-C VBUS lines after primary DC-DC regulation, especially in portable docking stations. IC Role / Device Role / Timing Role: Fast-response clamp limiting fault voltage to ≤81.2 V during hot-plug or adapter malfunction events, upstream of USB PD controller and port switch. Use Value: Low 0.5 μA leakage avoids quiescent current penalties; SMB package allows placement adjacent to connector with minimal trace inductance for optimal ESD suppression. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51CA-E3/52 (Vishay) | Same VWM/VBR/PPPM specs; differs in packaging (tape-and-reel vs. bulk) and MSL rating (Level 1 vs. unspecified) | No functional difference in circuit protection; may require requalification if moisture sensitivity is critical in high-humidity manufacturing | Select SMBJ51CD-M3/H when JESD 201 Class 2 whisker resistance and halogen-free compliance are mandatory. |
| P6SMB51CA (ON Semiconductor) | Identical SMB package, 51 V VWM, but wider VBR tolerance (±5 %), higher ID (1.0 μA), and lower PPPM (600 W same, but derating curve differs) | Marginally higher clamping voltage and leakage reduce suitability for precision analog or low-power always-on circuits | Choose SMBJ51CD-M3/H where tighter VBR control and lower leakage are required for robustness in industrial-grade designs. |
Compared with SMBJ51CA-E3/52 and P6SMB51CA, the SMBJ51CD-M3/H offers superior VBR tolerance (±3.5 %), lower leakage (≤0.5 μA), and verified JESD 201 Class 2 whisker resistance - making it preferred for high-reliability industrial and automotive applications demanding long-term solder joint integrity and precise clamping thresholds.
Availability
SMBJ51CD-M3/H is available at Aetrix Electronics and suitable for industrial sensor interfaces, telecom line protection, and automotive body control modules requiring stable component supply, long-lifecycle support, and consistent surge immunity performance.
Supply support for SMBJ51CD-M3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was engineered for high-energy transient suppression in space-constrained surface-mount applications, targeting industrial, telecom, and automotive markets where robustness against ESD, lightning, and inductive switching is mission-critical.
FAQ
What is the polarity configuration of SMBJ51CD-M3/H?
The SMBJ51CD-M3/H is a bidirectional TVS diode with symmetrical conduction characteristics in both directions. It has no cathode band marking on the package, confirming its bidirectional functionality. This allows it to protect AC signals or differential lines without orientation constraints during PCB assembly, unlike unidirectional variants such as SMBJ51D-M3/H which feature a visible cathode band.
Does SMBJ51CD-M3/H meet RoHS and halogen-free requirements?
Yes, SMBJ51CD-M3/H is halogen-free, RoHS-compliant, and qualified as industrial grade per its M3 suffix designation. It satisfies JESD 201 Class 2 whisker resistance testing and uses UL 94 V-0 rated molding compound. These attributes ensure compatibility with environmentally regulated manufacturing and long-term reliability in harsh operating environments.
What is the maximum clamping voltage for SMBJ51CD-M3/H at rated surge current?
The maximum clamping voltage (VC) for SMBJ51CD-M3/H is 81.2 V at 7.4 A peak pulse current (IPPM), measured using the standard 10/1000 μs waveform. This value represents the upper limit of voltage imposed on the protected circuit during a full-rated surge event and is critical for ensuring downstream ICs remain within their absolute maximum ratings.
Can SMBJ51CD-M3/H be used in place of a unidirectional TVS like SMBJ51D-M3/H?
No - SMBJ51CD-M3/H is strictly bidirectional and cannot replace unidirectional types like SMBJ51D-M3/H in DC-biased applications where reverse conduction must be blocked. Substituting it in such cases would allow unintended current flow during normal operation. Always verify circuit topology: use SMBJ51CD-M3/H only where symmetrical transient suppression is required, e.g., AC lines or differential buses.
What is the thermal resistance and how does it affect SMBJ51CD-M3/H's surge handling?
SMBJ51CD-M3/H has a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended pad layout. This value determines temperature rise during sustained power dissipation; for example, 1 W steady-state dissipation causes ~125 °C rise above ambient. During short pulses, thermal inertia allows higher peak power (600 W), but repeated surges require adequate copper area to avoid exceeding 150 °C maximum junction temperature.
SMBJ51CD-M3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 57.6V
- Voltage - Clamping (Max) @ Ipp:
- 81.2V
- Current - Peak Pulse (10/1000µs):
- 7.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ51CD-M3/H FAQ
1.How can I place an order for SMBJ51CD-M3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51CD-M3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51CD-M3/H reliable?
The price and inventory of SMBJ51CD-M3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51CD-M3/H is usually 5 days.
3.What payment methods are accepted for SMBJ51CD-M3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51CD-M3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51CD-M3/H?
SMBJ51CD-M3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51CD-M3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51CD-M3/H?
For technical support, including SMBJ51CD-M3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51CD-M3/H requirements.
6.How does Aetrix verify that SMBJ51CD-M3/H is sourced from the original manufacturer or authorized distributors?
All SMBJ51CD-M3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51CD-M3/H meets industry standards.
7.What is the process for return or replacement of SMBJ51CD-M3/H?
All SMBJ51CD-M3/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51CD-M3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51CD-M3/H part is unused and in its original packaging.
Return procedure for SMBJ51CD-M3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ51CD-M3/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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