My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ51-E3/5B
;;2.jpg)
- Part No.:
- SMBJ51-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51-E3/5B.pdf
- Description:
- TVS DIODE 51VWM 91.1VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,290
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ51-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection of sensitive electronics. It features a 51 V standoff voltage (VWM), 56.7–62.7 V breakdown voltage (VBR) at 1 mA, 82.4 V maximum clamping voltage (VC) at 7.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in power supply rails, I/O lines, and MOSFET gate protection across industrial and telecom systems.
For engineers reviewing the SMBJ51-E3/5B datasheet, SMBJ51-E3/5B pinout, SMBJ51-E3/5B application, or SMBJ51-E3/5B equivalent, this page delivers verified electrical parameters, package dimensions, clamping behavior under surge conditions, thermal resistance data, and RoHS-compliant commercial-grade sourcing context - all specific to the SMBJ51-E3/5B variant with DO-214AA (SMB) package and matte tin-plated leads.
Technical Context
The SMBJ51-E3/5B operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its VBR threshold (min. 56.7 V), with cathode band marking polarity. Its low incremental surge resistance and sub-nanosecond response time enable effective suppression of ESD, lightning-induced transients, and inductive switching spikes.
Thermally, it exhibits RθJA = 100 °C/W (junction-to-ambient, on 0.2" × 0.2" copper pads) and RθJL = 20 °C/W (junction-to-lead), supporting reliable operation up to TJ = +150 °C. The device is rated for 100 A non-repetitive forward surge current (8.3 ms half-sine) and meets MSL Level 1 per J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - Maximum continuous reverse operating voltage before significant leakage; defines safe working margin below clamping onset. |
| VBR (min/max) | 56.7 V / 62.7 V at IT = 1 mA - Confirmed breakdown range ensures predictable turn-on during overvoltage events. |
| VC @ IPPM | 82.4 V at 7.3 A - Clamped voltage seen by protected circuit during full 600 W surge; limits stress on downstream components. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 µs waveform; validates suitability for IEC 61000-4-5 Level 4 surges. |
| IFSM | 100 A - Single half-sine surge current rating (8.3 ms); supports protection of high-energy inductive loads. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in under-hood automotive or high-ambient industrial environments. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 0.220" × 0.155" footprint; compatible with automated pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path) in unidirectional configuration; conducts during forward surge. |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., VIN, signal rail); avalanches into conduction when reverse voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Validates compliance with IEC 61000-4-5 surge immunity requirements for industrial and telecom equipment. |
| Clamping voltage ≤ 82.4 V at 7.3 A | Ensures protected ICs or MOSFETs experience <83 V stress during worst-case transient, preserving reliability. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns response), critical for protecting high-speed interfaces. |
| MSL Level 1, LF peak 260 °C | Enables standard lead-free reflow assembly without moisture-related popcorn failure risk. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets global environmental regulations; suitable for consumer, computing, and general industrial applications. |
Applications
| Industrial Motor Drives | Telecom Power Supply Inputs |
|---|---|
|
Use Scenario: Protection of DC bus inputs against inductive kickback from relay coils and contactor switching in PLC modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between input rail and ground to clamp transients before they reach DC-DC controllers or microcontrollers. Use Value: Limits voltage excursions to ≤82.4 V during 600 W surges, preventing latch-up or gate oxide damage in downstream SiC MOSFET drivers. |
Use Scenario: Surge suppression on -48 V telecom rectifier outputs feeding base station backplane distribution. IC Role / Device Role / Timing Role: Standoff-rated TVS connected anode-to-ground, cathode-to-rail to absorb IEC 61000-4-5 Level 4 (4 kV) common-mode surges. Use Value: Maintains system uptime by preventing shutdown or latch-up in PMICs and FPGA power sequencing circuits during field-deployed lightning events. |
| Automotive Body Control Modules | Consumer Appliance Sensor Interfaces |
|
Use Scenario: Protection of LIN bus transceivers and window lift motor drivers exposed to load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS on 12 V supply rail, leveraging 51 V VWM to tolerate normal battery fluctuations while clamping >60 V spikes. Use Value: Enables AEC-Q101-qualified variants (e.g., SMBJ51HE3) to meet ISO 7637-2 Pulse 5a requirements without derating. |
Use Scenario: ESD and surge hardening of analog sensor inputs (e.g., temperature, humidity) in smart home HVAC control boards. IC Role / Device Role / Timing Role: Low-capacitance TVS on signal lines between sensors and ADC inputs, minimizing signal distortion during clamping. Use Value: Prevents false readings or firmware resets caused by 8 kV HBM ESD events, validated via JEDEC JESD22-A114 test methodology. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51A-M3/5B | Halogen-free, RoHS-compliant variant with identical electrical specs and SMB package. | No functional difference; selected where halogen-free material compliance is mandated (e.g., EU public infrastructure tenders). | Choose SMBJ51A-M3/5B when halogen-free bill-of-materials is required; same layout and performance as SMBJ51-E3/5B. |
| SMCJ51A-E3/57T | Same VWM/VC but in larger SMC (DO-214AB) package; higher PPPM = 1500 W; RθJA = 35 °C/W. | Better thermal dissipation and surge margin; requires larger PCB footprint and different pad layout. | Select SMCJ51A-E3/57T only when 1500 W surge rating or lower thermal resistance is required; not drop-in compatible. |
Compared with SMBJ51A-M3/5B, SMBJ51-E3/5B offers identical protection performance with standard RoHS compliance; versus SMCJ51A-E3/57T, it trades 2.5× surge capacity for 40% smaller board area and compatibility with high-density layouts.
Availability
SMBJ51-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supply inputs, automotive body control modules, and consumer appliance sensor interfaces requiring stable component supply and RoHS-compliant commercial-grade TVS diodes.
Supply support for SMBJ51-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in space-constrained surface-mount applications, targeting industrial automation, telecommunications infrastructure, and automotive subsystems where robustness and standardized packaging are critical.
FAQ
What is the standoff voltage rating of SMBJ51-E3/5B?
The SMBJ51-E3/5B has a maximum reverse standoff voltage (VWM) of 51 V, meaning it remains non-conductive under normal operating conditions up to this voltage. This value ensures compatibility with 48 V nominal systems and provides sufficient margin below its 56.7 V minimum breakdown voltage. The SMBJ51-E3/5B is therefore suited for protecting circuits where operating voltages remain within ±10 % of 48 V nominal rails.
Does SMBJ51-E3/5B meet automotive qualification standards?
The SMBJ51-E3/5B itself is a commercial-grade RoHS-compliant part (E3 suffix) and is not AEC-Q101 qualified. However, Vishay offers the functionally identical SMBJ51HE3 variant - which shares the same electrical characteristics and SMB package - explicitly qualified to AEC-Q101 for automotive applications. For automotive designs, SMBJ51HE3 is the recommended drop-in alternative to SMBJ51-E3/5B.
What is the clamping voltage of SMBJ51-E3/5B under surge conditions?
The SMBJ51-E3/5B clamps to a maximum of 82.4 V when subjected to its rated peak pulse current of 7.3 A (10/1000 µs waveform). This clamping voltage is measured across the device terminals during surge conduction and represents the upper voltage limit imposed on the protected circuit. Designers use this value to verify that downstream components, such as MOSFETs or regulators, remain within their absolute maximum ratings during transient events.
Can SMBJ51-E3/5B be used in bidirectional protection configurations?
No - SMBJ51-E3/5B is a unidirectional TVS diode, identifiable by its cathode band marking. Bidirectional operation requires a CA-suffixed part such as SMBJ51CA. Using SMBJ51-E3/5B in a bidirectional application would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit. Always match the device polarity (A = unidirectional, CA = bidirectional) to the signal or power rail topology.
What package type does SMBJ51-E3/5B use, and what are its key mechanical dimensions?
SMBJ51-E3/5B uses the SMB (DO-214AA) surface-mount package, measuring 0.220" × 0.155" (5.59 mm × 3.94 mm) with a maximum height of 0.096" (2.44 mm). Its leads are matte tin-plated and compliant with J-STD-002 solderability standards. The package supports automated placement and reflow soldering up to 260 °C peak, meeting MSL Level 1 requirements without pre-baking.
SMBJ51-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 91.1V
- Current - Peak Pulse (10/1000µs):
- 6.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ51-E3/5B FAQ
1.How can I place an order for SMBJ51-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51-E3/5B reliable?
The price and inventory of SMBJ51-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ51-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51-E3/5B?
SMBJ51-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51-E3/5B?
For technical support, including SMBJ51-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51-E3/5B requirements.
6.How does Aetrix verify that SMBJ51-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ51-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ51-E3/5B?
All SMBJ51-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ51-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ51-E3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
