Vishay General Semiconductor - Diodes Division SMBJ51HE3/52
- Part No.:
- SMBJ51HE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51HE3/52.pdf
- Description:
- TVS DIODE 51VWM 91.1VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:3,155
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Product details
Overview
SMBJ51HE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 51 V standoff voltage (VWM), 56.7–62.7 V breakdown range (VBR at 1 mA), 82.4 V maximum clamping voltage (VC) at 7.3 A peak pulse current, and 600 W peak pulse power rating with a 10/1000 µs waveform - deployed in automotive ECUs, industrial I/O modules, and telecom power supplies.
For engineers reviewing the SMBJ51HE3/52 datasheet, SMBJ51HE3/52 pinout, SMBJ51HE3/52 application, or SMBJ51HE3/52 equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data, clamping performance under surge conditions, and direct alternatives for automotive-grade TVS selection.
Technical Context
This unidirectional TVS operates as a voltage-clamped shunt protector: when reverse voltage exceeds VWM = 51 V, it avalanches to limit transient energy across protected circuit nodes. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1 µA at VWM), while the 100 °C/W junction-to-ambient thermal resistance requires careful PCB copper pad design per JEDEC standards.
The device meets AEC-Q101 stress testing for automotive use and supports repetitive surge duty cycles up to 0.01 %, with fast response time (<1 ns) and low incremental surge resistance - enabling reliable suppression of ESD, load dump, and inductive switching transients in 12 V and 24 V systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 51 V - Maximum continuous reverse operating voltage before conduction begins; defines upper limit of normal operation. |
| VBR (Breakdown Voltage) | 56.7–62.7 V at 1 mA - Confirmed avalanche onset range; ensures predictable triggering margin above VWM. |
| VC (Clamping Voltage) | 82.4 V at IPPM = 7.3 A - Peak voltage seen by protected circuit during 10/1000 µs surge; critical for IC survivability. |
| PPPM (Peak Pulse Power) | 600 W - Sustained transient energy absorption capability under standardized waveform; validates protection level. |
| IFSM (Surge Current) | 100 A - Single half-sine 8.3 ms forward surge rating; relevant for unidirectional load-dump scenarios. |
| TJmax | 150 °C - Maximum junction temperature; sets thermal derating envelope for high-ambient designs. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; guides heatsinking requirements. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads; polarity indicated by cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or lower-potential rail; completes shunt path during reverse transient. |
| Cathode | Protected line connection | Connected to the line being protected (e.g., 12 V supply); conducts avalanche current to anode during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS power domains. |
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against ISO 7637-2 Pulse 1, 2a, 3a/b, and IEC 61000-4-5 Level 3 surges. |
| Glass passivated junction | Ensures stable VBR tolerance, low leakage (<1 µA), and long-term reliability under thermal cycling. |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes overvoltage stress on downstream components compared to higher-ratio TVS devices. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: 12 V battery line in engine control unit exposed to load dump transients up to 40 V for 400 ms. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VBAT and chassis ground to clamp transients before they reach LDOs and microcontrollers. Use Value: Limits peak voltage to ≤82.4 V during 7.3 A surge, preventing damage to 36 V-rated input stages of PMICs and CAN transceivers. |
Use Scenario: Analog output line (4–20 mA) from pressure sensor in factory automation PLC module. IC Role / Device Role / Timing Role: TVS mounted at connector entry point to absorb ESD events and field-wiring induced spikes. Use Value: Sub-1 ns response and <1 µA leakage preserve signal integrity and offset accuracy while surviving ±15 kV contact ESD per IEC 61000-4-2. |
| Telecom DC Power Input Protection | Consumer Device USB Port Protection |
|
Use Scenario: 48 V DC input to PoE-powered switch supporting IEEE 802.3af/at compliance. IC Role / Device Role / Timing Role: Primary overvoltage clamp upstream of DC-DC converter, coordinated with fuse and MOV. Use Value: 600 W rating handles sustained surges from lightning-induced coupling; 51 V VWM avoids false triggering during 48 V nominal ripple. |
Use Scenario: VBUS line in USB-C port of smart speaker subjected to hot-plug and cable discharge events. IC Role / Device Role / Timing Role: Secondary protection stage after integrated USB port controller's internal ESD diodes. Use Value: Clamps 8 kV IEC 61000-4-2 ESD to <82.4 V within nanoseconds, protecting USB PHY and power delivery ICs rated to 20 V absolute max. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51AHE3/52 | Same electrical specs and AEC-Q101 qualification; differs only in packaging suffix notation (HE3 vs HE3/52 denotes tape-and-reel quantity code). | No functional difference; identical use in automotive and industrial designs. | Select SMBJ51AHE3/52 if sourcing from distributors listing that exact P/N variant; electrically interchangeable. |
| SMCJ51AHE3/52 | Same VWM, VBR, and VC, but in larger SMC (DO-214AB) package with 1500 W PPPM rating and 12.5 A IPPM. | Used where higher surge margin is required (e.g., front-end power entry), but requires larger PCB footprint and different thermal layout. | Choose SMCJ51AHE3/52 only when 600 W is insufficient; SMBJ51HE3/52 remains optimal for space-constrained board-level protection. |
Compared with SMBJ51AHE3/52 (identical function, packaging variant) and SMCJ51AHE3/52 (higher-power SMC variant), SMBJ51HE3/52 delivers AEC-Q101-compliant 600 W protection in the smallest possible surface-mount footprint - making it the preferred choice for dense automotive and industrial PCB layouts where surge margin aligns with system-level threat models.
Availability
SMBJ51HE3/52 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom power supply modules requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for SMBJ51HE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and automotive-grade qualification.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-reliability transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure applications demanding AEC-Q101 validation and consistent clamping performance.
FAQ
What is the clamping voltage of SMBJ51HE3/52 at its rated peak pulse current?
The SMBJ51HE3/52 has a maximum clamping voltage (VC) of 82.4 V at 7.3 A peak pulse current (IPPM) under a 10/1000 µs waveform. This value is measured per JEDEC standards and defines the highest voltage imposed on the protected circuit during a standardized surge event. The SMBJ51HE3/52 maintains this clamping performance across its qualified operating temperature range and is validated for repeatable behavior in automotive-grade applications.
Is SMBJ51HE3/52 qualified for automotive applications?
Yes, SMBJ51HE3/52 is AEC-Q101 qualified, as confirmed by Vishay's documentation and ordering code suffix "HE3". This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD - making SMBJ51HE3/52 suitable for under-hood and cabin electronics such as body control modules, infotainment power rails, and ADAS camera power inputs. The SMBJ51HE3/52 meets all requirements for automotive-grade transient suppression without derating.
What is the standoff voltage (VWM) of SMBJ51HE3/52, and why does it matter?
The standoff voltage (VWM) of SMBJ51HE3/52 is 51 V - the maximum DC or continuous reverse voltage the device can withstand without entering avalanche conduction. This parameter ensures the SMBJ51HE3/52 remains non-conductive during normal operation of 48 V or 36 V systems, avoiding leakage-related power loss or false triggering. Selecting a VWM ≥110 % of nominal line voltage prevents nuisance conduction while preserving sufficient margin for ripple and tolerance.
How does the SMBJ51HE3/52 package compare to the SMCJ series?
The SMBJ51HE3/52 uses the SMB (DO-214AA) package - measuring 4.57 mm × 3.94 mm - whereas the SMCJ series uses the larger SMC (DO-214AB) package at 7.11 mm × 6.22 mm. This 60 % smaller footprint makes SMBJ51HE3/52 ideal for space-constrained layouts, though it delivers 600 W peak power versus 1500 W for SMCJ51HE3/52. The SMBJ51HE3/52 maintains identical VWM, VBR, and VC values, enabling drop-in replacement where surge requirements align.
What is the maximum junction temperature rating for SMBJ51HE3/52?
The SMBJ51HE3/52 has a maximum junction temperature (TJmax) of +150 °C, as specified in Vishay's datasheet. This rating enables operation in under-hood automotive environments and industrial enclosures with elevated ambient temperatures. Thermal design must account for RθJA = 100 °C/W on standard 0.2" × 0.2" copper pads; exceeding TJmax risks parametric shift or catastrophic failure. The SMBJ51HE3/52's 150 °C rating supports extended lifetime in thermally demanding deployments.
SMBJ51HE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 91.1V
- Current - Peak Pulse (10/1000µs):
- 6.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ51HE3/52 FAQ
1.How can I place an order for SMBJ51HE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51HE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51HE3/52 reliable?
The price and inventory of SMBJ51HE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51HE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ51HE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51HE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51HE3/52?
SMBJ51HE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51HE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51HE3/52?
For technical support, including SMBJ51HE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51HE3/52 requirements.
6.How does Aetrix verify that SMBJ51HE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ51HE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51HE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ51HE3/52?
All SMBJ51HE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51HE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51HE3/52 part is unused and in its original packaging.
Return procedure for SMBJ51HE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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