My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ51HE3/5B
;;2.jpg)
- Part No.:
- SMBJ51HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ51HE3/5B.pdf
- Description:
- TVS DIODE 51VWM 91.1VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:6,841
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ51HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 51 V stand-off voltage (VWM), 56.7–62.7 V breakdown voltage (VBR) at 1 mA, 82.4 V maximum clamping voltage (VC) at 7.3 A peak pulse current, and 600 W peak pulse power dissipation with a 10/1000 µs waveform.
For engineers reviewing the SMBJ51HE3/5B datasheet, SMBJ51HE3/5B pinout, SMBJ51HE3/5B application, or SMBJ51HE3/5B equivalent, key selection criteria include clamping performance under 7.3 A surge, unidirectional polarity for DC rail protection, AEC-Q101 qualification for automotive use, and compatibility with automated SMT placement on standard PCB pad layouts.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VWM = 51 V, it avalanches into low-impedance conduction to divert transient energy away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
The device is rated for 100 A non-repetitive forward surge current (IFSM) and supports continuous power dissipation of 5.0 W at TA = 50 °C. Thermal resistance is 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), enabling effective heat transfer in compact layouts with minimum 5.0 mm × 5.0 mm copper pads per terminal.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - Maximum steady-state reverse voltage before clamping begins; defines protected circuit's operating rail limit. |
| VBR (min/max) | 56.7 V / 62.7 V at IT = 1 mA - Confirmed avalanche onset range; ensures reliable triggering above normal operating voltage. |
| VC @ IPPM | 82.4 V at 7.3 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected device. |
| PPPM | 600 W - Peak transient power handling capability; validates robustness against IEC 61000-4-5 Level 4 surges. |
| IPPM | 7.3 A - Peak pulse current corresponding to VC; used to size PCB trace width and thermal relief. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity marked by cathode band; anode and cathode terminals are axially oriented along the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to ground or low-voltage return path; completes shunt path during transient event. |
| Cathode | Protected line input | Connected to the line being protected (e.g., 51 V supply rail); avalanche conduction occurs from cathode to anode. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 surge immunity requirements up to Level 4 (4 kV/2 Ω) on 51 V lines. |
| AEC-Q101 qualified | Validated for automotive applications including engine control units, body electronics, and ADAS sensor interfaces. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term parameter stability under thermal cycling and humidity stress. |
| MSL Level 1 (260 °C peak) | Supports lead-free reflow without popcorn cracking or delamination; no floor life limitation before assembly. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (<1 ns rise time), improving protection margin for CMOS ICs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 48 V/51 V battery-supplied ECUs from load-dump and alternator surge events. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp transients exceeding 51 V. Use Value: Limits peak voltage to ≤82.4 V during 7.3 A surge, preventing damage to 65 V-rated power management ICs and microcontrollers. |
Use Scenario: Safeguarding analog front-end inputs of industrial current/voltage sensors exposed to field wiring surges. IC Role / Device Role / Timing Role: Standoff-connected TVS on signal line (e.g., 4–20 mA loop) to absorb coupled transients before reaching precision amplifier. Use Value: Clamps induced spikes within 1 ns response time while maintaining <1 µA leakage at 51 V, preserving measurement accuracy. |
| Telecom DC Power Input Protection | Consumer Device USB/DC Jack Protection |
|
Use Scenario: Securing -48 V telecom rectifier outputs against lightning-induced surges on central office equipment. IC Role / Device Role / Timing Role: Reverse-biased TVS (cathode to -48 V rail, anode to ground) providing bidirectional-capable clamping via unidirectional architecture. Use Value: Withstands 600 W pulses without degradation, meeting GR-1089-CORE Level 3 surge requirements for network infrastructure. |
Use Scenario: Hardening 5 V–24 V DC input jacks on smart home hubs and portable monitors against ESD and accidental AC misconnection. IC Role / Device Role / Timing Role: Primary overvoltage clamp upstream of input filter and LDO regulator. Use Value: Fast response and low clamping ratio (VC/VWM = 1.62) prevent latch-up in downstream USB controllers and display drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51A-E3/5B | No AEC-Q101 qualification; commercial-grade only; identical electrical specs and SMB package. | Not suitable for automotive production; acceptable for industrial or consumer prototypes where qualification is not mandated. | Select SMBJ51A-E3/5B when cost sensitivity outweighs automotive reliability requirements. |
| SAC51-03 | Lower 300 W PPPM, SOD-323 package (smaller footprint), higher VC = 93 V at 3.3 A; not AEC-Q101 qualified. | Limited to low-energy surges in space-constrained portable devices; insufficient for IEC 61000-4-5 Level 4. | Choose SAC51-03 only for non-critical, low-power applications where board area is prioritized over surge robustness. |
Compared with SMBJ51A-E3/5B and SAC51-03, SMBJ51HE3/5B uniquely delivers automotive-grade reliability (AEC-Q101), full 600 W surge capacity, and proven thermal performance in SMB layout-making it the only option qualified for safety-critical 51 V rail protection in production vehicles.
Availability
SMBJ51HE3/5B is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface hardening, and telecom DC power input protection requiring stable component supply across multi-year production cycles.
Supply support for SMBJ51HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was developed for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where failure due to voltage surges must be eliminated.
FAQ
What is the clamping voltage of SMBJ51HE3/5B at its rated peak pulse current?
The SMBJ51HE3/5B has a maximum clamping voltage (VC) of 82.4 V at its specified peak pulse current (IPPM) of 7.3 A, measured using the standardized 10/1000 µs double-exponential surge waveform. This value defines the upper voltage limit imposed on protected circuitry during worst-case transient events and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMBJ51HE3/5B maintains this clamping performance across its qualified operating temperature range.
Is SMBJ51HE3/5B suitable for automotive applications?
Yes, SMBJ51HE3/5B is AEC-Q101 qualified, meaning it has passed rigorous stress tests including temperature cycling, high-temperature reverse bias, and ESD verification required for automotive electronic modules. Its construction-including glass-passivated junction, MSL Level 1 rating, and guaranteed operation from -55 °C to +150 °C-makes SMBJ51HE3/5B appropriate for engine control units, body control modules, and ADAS power supplies where reliability under thermal and electrical stress is mandatory.
How does the SMBJ51HE3/5B differ from the standard SMBJ51A-E3/5B?
The SMBJ51HE3/5B differs from SMBJ51A-E3/5B solely in qualification status: SMBJ51HE3/5B carries AEC-Q101 certification, while SMBJ51A-E3/5B is commercial-grade only. All electrical parameters-including VWM = 51 V, VBR = 56.7–62.7 V, VC = 82.4 V, and PPPM = 600 W-are identical. The "HE3" suffix explicitly denotes the AEC-Q101 qualified version, making SMBJ51HE3/5B the correct choice for automotive production programs requiring certified components.
What is the recommended PCB pad layout for SMBJ51HE3/5B?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad for each terminal of SMBJ51HE3/5B to achieve rated thermal performance and surge current handling. This layout ensures junction-to-ambient thermal resistance remains at the typical 100 °C/W and prevents localized overheating during repetitive 600 W pulses. The SMB (DO-214AA) outline drawing confirms terminal spacing and solder mask clearance; adherence to this pad geometry is essential to maintain both electrical robustness and mechanical reliability in automated assembly.
Does SMBJ51HE3/5B support bidirectional transient suppression?
No, SMBJ51HE3/5B is a unidirectional TVS diode, intended for DC circuits where polarity is fixed-such as positive supply rails referenced to ground. For bidirectional protection (e.g., AC lines or data buses), Vishay offers the SMBJ51CA variant. The "A" suffix in SMBJ51HE3/5B explicitly denotes unidirectionality, and its cathode band marking must be oriented toward the protected line. Using SMBJ51HE3/5B in bidirectional configurations risks failure during negative-going transients.
SMBJ51HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 91.1V
- Current - Peak Pulse (10/1000µs):
- 6.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ51HE3/5B FAQ
1.How can I place an order for SMBJ51HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ51HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ51HE3/5B reliable?
The price and inventory of SMBJ51HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ51HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ51HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ51HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ51HE3/5B?
SMBJ51HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ51HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ51HE3/5B?
For technical support, including SMBJ51HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ51HE3/5B requirements.
6.How does Aetrix verify that SMBJ51HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ51HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ51HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ51HE3/5B?
All SMBJ51HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ51HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ51HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ51HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ51HE3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
