Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ54CAHE3_B/I

Part No.:
SMBJ54CAHE3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ54CAHE3_B/I.pdf
Description:
600W,54V 5%,BIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,753

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ54CAHE3_B/I from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal and power lines. It features a 54 V standoff voltage (VWM), 600 W peak pulse power (10/1000 µs), clamping voltage of 87.1 V at 6.9 A peak current, and operates across -55 °C to +150 °C junction temperature - deployed in industrial sensor interfaces and telecom line protection.

For engineers reviewing the SMBJ54CAHE3_B/I datasheet, SMBJ54CAHE3_B/I pinout, SMBJ54CAHE3_B/I application, or SMBJ54CAHE3_B/I equivalent, this page delivers verified electrical specs, bidirectional clamping behavior, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and real-world use cases in automotive-grade ESD/surge protection circuits.

Technical Context

This bidirectional TVS diode uses a glass-passivated silicon junction to achieve fast response (<1 ps) and low clamping ratio (VC/VWM ≈ 1.61). Its symmetrical breakdown characteristic (VBR min/max = 60.0 V / 66.3 V at 1 mA) ensures equal surge suppression in both polarities without polarity marking on the case.

Rated for 600 W peak pulse power under standard 10/1000 µs waveform and derated above 25 °C per Fig. 2, it sustains repetitive surges at 0.01% duty cycle. The device meets MSL Level 1 (JEDEC J-STD-020) and supports lead-free reflow up to 260 °C peak temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 54 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working range for protected circuitry.
VBR (min/max) 60.0 V / 66.3 V at 1 mA - Breakdown threshold range confirming bidirectional symmetry and design margin for transient suppression.
VC @ IPPM 87.1 V at 6.9 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on downstream ICs.
PPPM 600 W - Peak pulse power handling capability; enables robust protection against lightning-induced or inductive-switching transients.
IPPM 6.9 A - Peak surge current supported at rated clamping voltage; correlates directly with system-level surge test compliance (e.g., IEC 61000-4-5).
TJ max +150 °C - Maximum junction temperature; supports operation in under-hood automotive and high-ambient industrial environments.
RθJA 100 °C/W - Thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB layout requirements for sustained power dissipation.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal in forward bias; reverse-biased path during negative transients One side of symmetrical junction; forms clamping path for either polarity surge without external orientation dependency.
Cathode Current exit terminal in forward bias; reverse-biased path during positive transients Other side of symmetrical junction; identical electrical role to Anode due to bidirectional construction - no band marking required.

Key Features

Feature Design Value
Bidirectional clamping Enables single-device protection of AC-coupled or floating signal lines (e.g., RS-485, CAN bus, sensor bridges) without polarity concerns.
600 W peak pulse power (10/1000 µs) Meets IEC 61000-4-5 Level 3 (1 kV/2 kV surge) requirements when properly laid out on PCB with recommended copper pad area.
AEC-Q101 qualified Validated for automotive applications including engine control modules, body electronics, and ADAS sensor interfaces requiring reliability under thermal cycling and vibration.
MSL Level 1 moisture sensitivity Allows unlimited floor life and standard reflow profile usage without baking - reduces manufacturing overhead in high-volume SMT lines.
Low incremental surge resistance Minimizes voltage overshoot during fast-rising transients (e.g., ESD > 15 kV), improving immunity of sensitive analog front-ends and microcontroller I/Os.

Applications

Industrial Sensor Interface Automotive CAN Bus Protection

Use Scenario: Protecting 4–20 mA current-loop transmitters and analog sensor outputs from load dump and ESD events in factory automation systems.

IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed across differential signal pair or supply rail to limit transient excursions below IC absolute maximum ratings.

Use Value: Prevents latch-up or permanent damage to precision op-amps and ADCs by limiting clamped voltage to 87.1 V while sustaining 6.9 A surge current.

Use Scenario: Safeguarding CAN FD transceivers (e.g., TJA1044, SN65HVD230) against battery line transients and ISO 16750-2 load dump pulses in vehicle ECUs.

IC Role / Device Role / Timing Role: Low-capacitance (typ. 100 pF at 0 V) bidirectional clamp placed between CANH/CANL and ground to suppress common-mode surges without distorting data integrity.

Use Value: Maintains signal rise/fall times < 1 ns due to sub-1 ps response, enabling reliable CAN FD operation up to 5 Mbps while meeting AEC-Q101 lifetime requirements.

Telecom Line Interface Power Supply Input Stage

Use Scenario: Shielding Ethernet PHYs and PoE injectors from lightning-induced surges on RJ45 ports in outdoor access points and base stations.

IC Role / Device Role / Timing Role: Primary-level TVS mounted at connector entry point, shunting energy before reaching isolation transformers and magnetics.

Use Value: Withstands repeated 600 W surges at 0.01% duty cycle, reducing need for secondary protection stages and lowering BOM cost in Class 4 PoE designs.

Use Scenario: Guarding DC-DC converter inputs against 12 V/24 V rail transients caused by relay switching or motor commutation in embedded controllers.

IC Role / Device Role / Timing Role: Standoff-rated clamp (54 V) placed after input filter but before buck controller IC to prevent overvoltage shutdown or internal FET avalanche.

Use Value: Limits input rail excursion to ≤87.1 V during 100 µs–1 ms surges, preserving converter regulation and avoiding brownout resets in mission-critical systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ54CAHM3_B/I Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. No difference in circuit performance or layout; selected only where halogen-free material compliance is mandated (e.g., EU public infrastructure projects). Choose SMBJ54CAHM3_B/I when halogen-free certification is contractually required; otherwise SMBJ54CAHE3_B/I offers same protection at lower cost.
SMAJ54CAHE3_A/H Lower peak pulse power (400 W vs. 600 W); SMA package (smaller footprint, higher RθJA = 140 °C/W). Not suitable for IEC 61000-4-5 Level 3 or automotive load dump; limited to consumer-grade USB/UART protection with lower surge exposure. Select SMAJ54CAHE3_A/H only for space-constrained non-automotive designs where 400 W rating suffices and thermal budget allows higher junction temperature rise.

Compared with SMBJ54CAHE3_B/I, the HM3 variant adds halogen-free compliance without electrical trade-offs, while the SMAJ54CAHE3_A/H sacrifices 33% pulse power and thermal performance for smaller size - making SMBJ54CAHE3_B/I the optimal choice for industrial and automotive surge-critical applications.

Availability

SMBJ54CAHE3_B/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive CAN bus protection, telecom line interfaces, and power supply input stage applications requiring stable component supply and long-term lifecycle support.

Supply support for SMBJ54CAHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series targets high-energy transient suppression in harsh environments - engineered for automotive, industrial, and telecom systems where failure tolerance, thermal stability, and standardized surge compliance are mandatory.

FAQ

What is the clamping voltage of SMBJ54CAHE3_B/I at its rated peak pulse current?

The SMBJ54CAHE3_B/I has a maximum clamping voltage (VC) of 87.1 V at its rated peak pulse current (IPPM) of 6.9 A under the standard 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. The SMBJ54CAHE3_B/I maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C), ensuring consistent protection in demanding environments.

Is SMBJ54CAHE3_B/I suitable for automotive applications?

Yes, SMBJ54CAHE3_B/I is AEC-Q101 qualified and explicitly listed in Vishay's automotive ordering codes (suffix HE3 denotes RoHS-compliant and AEC-Q101 qualified). It is validated for use in engine control units, body electronics, and ADAS sensor modules where reliability under thermal cycling, mechanical vibration, and load dump conditions is critical. The SMBJ54CAHE3_B/I meets all stress test requirements defined in AEC-Q101 Rev D, including high-temperature operating life and unbiased highly accelerated stress testing.

How does the bidirectional nature of SMBJ54CAHE3_B/I affect PCB layout?

The SMBJ54CAHE3_B/I has no polarity marking and functions identically in both directions, eliminating orientation constraints during automated placement. Unlike unidirectional TVS diodes, it requires no cathode band alignment - simplifying layout, reducing assembly errors, and enabling symmetric placement across differential lines (e.g., CANH/CANL or RS-485 A/B). This also avoids risk of reverse installation that could leave circuits unprotected, making SMBJ54CAHE3_B/I ideal for high-reliability and high-volume manufacturing.

What is the thermal resistance of SMBJ54CAHE3_B/I, and how does it impact board design?

The SMBJ54CAHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in Vishay document 88392. This value dictates minimum copper area needed to maintain junction temperature within 150 °C under sustained 5.0 W power dissipation. For high-duty-cycle or ambient > 70 °C applications, designers must increase pad size or add thermal vias - underscoring why SMBJ54CAHE3_B/I's RθJA is a key layout parameter, not just a datasheet footnote.

Does SMBJ54CAHE3_B/I meet moisture sensitivity level (MSL) requirements for lead-free reflow?

Yes, SMBJ54CAHE3_B/I meets MSL Level 1 per J-STD-020, with a maximum lead-free reflow peak temperature of 260 °C. This means it can be processed using standard Pb-free reflow profiles without pre-baking, even after indefinite dry pack storage. The device's molding compound and terminations are fully qualified for this condition, making SMBJ54CAHE3_B/I compatible with high-throughput SMT lines and eliminating moisture-related yield loss - a critical advantage over MSL Level 3 or higher alternatives.

SMBJ54CAHE3_B/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
54V
Voltage - Breakdown (Min):
60V
Voltage - Clamping (Max) @ Ipp:
87.1V
Current - Peak Pulse (10/1000µs):
6.9A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ54CAHE3_B/I FAQ

1.How can I place an order for SMBJ54CAHE3_B/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ54CAHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ54CAHE3_B/I reliable?

The price and inventory of SMBJ54CAHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ54CAHE3_B/I is usually 5 days.

3.What payment methods are accepted for SMBJ54CAHE3_B/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ54CAHE3_B/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ54CAHE3_B/I?

SMBJ54CAHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ54CAHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ54CAHE3_B/I?

For technical support, including SMBJ54CAHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ54CAHE3_B/I requirements.

6.How does Aetrix verify that SMBJ54CAHE3_B/I is sourced from the original manufacturer or authorized distributors?

All SMBJ54CAHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ54CAHE3_B/I meets industry standards.

7.What is the process for return or replacement of SMBJ54CAHE3_B/I?

All SMBJ54CAHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ54CAHE3_B/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ54CAHE3_B/I part is unused and in its original packaging.

Return procedure for SMBJ54CAHE3_B/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ54CAHE3_B/I Tags

  • SMBJ54CAHE3_B/I
  • SMBJ54CAHE3_B/I PDF
  • SMBJ54CAHE3_B/I Datasheet
  • SMBJ54CAHE3_B/I Specifications
  • SMBJ54CAHE3_B/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ54CAHE3_B/I
  • Buy SMBJ54CAHE3_B/I
  • SMBJ54CAHE3_B/I Price
  • SMBJ54CAHE3_B/I Distributor
  • SMBJ54CAHE3_B/I Supplier
  • SMBJ54CAHE3_B/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER