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Vishay General Semiconductor - Diodes Division SMBJ58AHE3_B/H

Part No.:
SMBJ58AHE3_B/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ58AHE3_B/H.pdf
Description:
600W,58V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,135

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Product details

Overview

SMBJ58AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 58 V standoff voltage (VWM), 64.4–71.2 V breakdown range (VBR at 1 mA), 93.6 V max clamping voltage (VC) at 6.4 A peak pulse current, and 600 W peak pulse power (10/1000 µs waveform), used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.

For engineers reviewing the SMBJ58AHE3_B/H datasheet, SMBJ58AHE3_B/H pinout, SMBJ58AHE3_B/H application, or SMBJ58AHE3_B/H equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature limit (TJ = 150 °C), and RoHS-compliant packaging details - all critical for automotive-grade surge protection design-in.

Technical Context

This unidirectional TVS diode operates as a voltage-clamping device triggered by overvoltage events exceeding its reverse standoff rating. Its glass-passivated junction enables sub-nanosecond response time and low incremental surge resistance, ensuring effective suppression of lightning-induced surges (IEC 61000-4-5) and inductive switching transients.

The SMBJ58AHE3_B/H is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports automated SMT placement, and meets MSL Level 1 per J-STD-020 with 260 °C peak reflow profile. Its cathode band marking and matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 58 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating margin below breakdown.
VBR (min/max) 64.4 V / 71.2 V at IT = 1 mA - Confirmed breakdown threshold range; ensures reliable turn-on under transient stress.
VC @ IPPM 93.6 V at 6.4 A - Clamped voltage during 600 W 10/1000 µs surge; determines maximum stress imposed on protected downstream circuitry.
PPPM 600 W - Peak pulse power handling capability; validates suitability for IEC 61000-4-5 Level 4 (4 kV) surge immunity designs.
IFSM 100 A - Peak forward surge current rating (8.3 ms half-sine); supports robust protection of DC bus lines against load dump events.
TJ max +150 °C - Maximum junction temperature; enables operation in under-hood automotive environments and high-ambient industrial enclosures.
RθJA 100 °C/W - Junction-to-ambient thermal resistance (on 0.2" × 0.2" Cu pads); informs heatsinking requirements for sustained power dissipation.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H). Matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., GND or return path) in unidirectional clamp configuration.
Cathode Reverse-biased clamping terminal Connected to protected line (e.g., 48 V rail or sensor input); conducts only during overvoltage events above VWM.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and body electronics requiring reliability under thermal cycling and vibration.
600 W peak pulse power (10/1000 µs) Enables single-device compliance with IEC 61000-4-5 surge immunity up to 4 kV in 2 Ω source impedance configurations.
Glass passivated junction Ensures stable VBR tolerance and long-term reliability under repeated surge stress without parameter drift.
MSL Level 1 (260 °C peak) Supports standard lead-free reflow processes without moisture sensitivity concerns or baking requirements.
Low incremental surge resistance Minimizes VC overshoot during fast transients, reducing risk of latch-up or damage in sensitive CMOS inputs.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 48 V battery-fed ECUs from load dump and alternator surge transients.

IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between power rail and ground to shunt >60 V spikes.

Use Value: Limits voltage seen by downstream DC-DC converters and microcontrollers to ≤93.6 V during 600 W surges, preventing catastrophic failure.

Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-capacitance TVS connected across differential signal pair or single-ended output to GND.

Use Value: Sub-ns response clamps transients before they reach precision ADC front-ends, preserving measurement integrity.

Telecom DC Power Input Protection Motor Drive Gate Driver Protection

Use Scenario: Safeguarding PoE-powered equipment inputs against induced surges on long Ethernet runs.

IC Role / Device Role / Timing Role: Standoff-rated TVS on primary-side 57 V DC input, coordinated with upstream fuse and common-mode chokes.

Use Value: Withstands repetitive 10/1000 µs surges up to 600 W while maintaining 58 V operational headroom for IEEE 802.3bt compliance.

Use Scenario: Preventing gate oxide rupture in SiC MOSFET drivers due to Miller-induced voltage spikes during switching.

IC Role / Device Role / Timing Role: Clamp diode from gate to source, activated only during overvoltage excursions beyond driver's safe operating area.

Use Value: 93.6 V clamping ceiling ensures gate-source voltage remains within ±20 V rating of high-speed gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ58AHM3_B/H Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. No functional difference; selected when halogen-free compliance is mandated by OEM environmental policy. Direct drop-in replacement where RoHS + halogen-free material declaration is required.
SMCJ58AHE3_A/H Higher-power 1500 W version in larger SMC (DO-214AB) package; same VWM/VBR/VC ratings but higher IPPM (10.3 A). Used where system-level surge testing exceeds 600 W (e.g., ISO 7637-2 Pulse 5a) or board layout allows larger footprint. Choose when higher surge margin is needed and PCB space permits SMC package; not pin-compatible with SMBJ58AHE3_B/H.

Compared with SMBJ58AHE3_B/H, the SMBJ58AHM3_B/H offers identical protection performance with halogen-free construction, while the SMCJ58AHE3_A/H provides 2.5× higher pulse power in a physically incompatible package - making the former a direct material alternative and the latter a system-level upgrade path.

Availability

SMBJ58AHE3_B/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom power supply designs requiring stable component supply with AEC-Q101 validation and RoHS compliance.

Supply support for SMBJ58AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series targets high-reliability transient suppression in space-constrained surface-mount applications, with design focus on automotive, industrial, and communications infrastructure where surge immunity and long-term stability are critical.

FAQ

What is the maximum clamping voltage of SMBJ58AHE3_B/H under a 600 W surge?

The SMBJ58AHE3_B/H has a maximum clamping voltage (VC) of 93.6 V at 6.4 A peak pulse current, corresponding to the 600 W 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The SMBJ58AHE3_B/H maintains this clamping performance across its qualified operating temperature range.

Is SMBJ58AHE3_B/H qualified for automotive use?

Yes, SMBJ58AHE3_B/H is AEC-Q101 qualified, as confirmed in the Vishay ordering information table (page 3, footnote 1) and mechanical data section. This qualification covers stress tests including temperature cycling, humidity bias, and mechanical shock - validating its suitability for under-hood and chassis-mounted automotive modules. The "HE3" suffix explicitly denotes AEC-Q101 compliance in Vishay's naming convention.

What does the "B/H" suffix mean in SMBJ58AHE3_B/H?

The "B/H" suffix in SMBJ58AHE3_B/H indicates packaging configuration: "B" denotes tape-and-reel format per EIA-481, and "H" specifies a 7-inch diameter reel containing 750 units. This matches Vishay's preferred package code "H" in the Ordering Information table (page 3). The suffix does not affect electrical or thermal specifications - it solely identifies reel size and quantity.

How does SMBJ58AHE3_B/H differ from bidirectional variants like SMBJ58CA?

SMBJ58AHE3_B/H is unidirectional, with polarity marked by a cathode band and intended for DC line protection where reverse conduction must be blocked. In contrast, SMBJ58CA is bidirectional, lacks polarity marking, and clamps symmetrically in both directions - suited for AC lines or differential signal pairs. Their VBR and VC values differ: SMBJ58CA has min/max VBR of 64.4–71.2 V in each direction but higher leakage and no IFSM rating.

What is the thermal resistance of SMBJ58AHE3_B/H, and how is it measured?

The SMBJ58AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W, measured with the device mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per Vishay document 88392, page 3. This value assumes standard JEDEC test conditions and informs derating curves for power dissipation at elevated ambient temperatures - critical for thermal design in sealed enclosures.

SMBJ58AHE3_B/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
58V
Voltage - Breakdown (Min):
64.4V
Voltage - Clamping (Max) @ Ipp:
93.6V
Current - Peak Pulse (10/1000µs):
6.4A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ58AHE3_B/H FAQ

1.How can I place an order for SMBJ58AHE3_B/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ58AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ58AHE3_B/H reliable?

The price and inventory of SMBJ58AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ58AHE3_B/H is usually 5 days.

3.What payment methods are accepted for SMBJ58AHE3_B/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ58AHE3_B/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ58AHE3_B/H?

SMBJ58AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ58AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ58AHE3_B/H?

For technical support, including SMBJ58AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ58AHE3_B/H requirements.

6.How does Aetrix verify that SMBJ58AHE3_B/H is sourced from the original manufacturer or authorized distributors?

All SMBJ58AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ58AHE3_B/H meets industry standards.

7.What is the process for return or replacement of SMBJ58AHE3_B/H?

All SMBJ58AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ58AHE3_B/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ58AHE3_B/H part is unused and in its original packaging.

Return procedure for SMBJ58AHE3_B/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ58AHE3_B/H Tags

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