Vishay General Semiconductor - Diodes Division SMBJ58CAHE3_B/I
- Part No.:
- SMBJ58CAHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ58CAHE3_B/I.pdf
- Description:
- 600W,58V 5%,BIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:9,265
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ58CAHE3_B/I from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 58 V standoff voltage (VWM), 64.4–71.2 V breakdown range (VBR at 1 mA), and clamps transients to ≤93.6 V at 6.4 A peak pulse current (IPPM) under 10/1000 µs waveform - deployed on power rails and signal lines in industrial sensor interfaces.
For engineers reviewing the SMBJ58CAHE3_B/I datasheet, SMBJ58CAHE3_B/I pinout, SMBJ58CAHE3_B/I application, or SMBJ58CAHE3_B/I equivalent, this device is selected for high-reliability surge suppression where bidirectional clamping, AEC-Q101 qualification, and 600 W peak pulse power capability are required in compact PCB layouts.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector with symmetrical bidirectional conduction - enabling suppression of both positive and negative polarity transients without polarity sensitivity. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and low incremental surge resistance, critical for fast response to ESD and lightning-induced surges.
The device is rated for 150 °C maximum junction temperature and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its thermal resistance (RθJA = 100 °C/W) reflects performance on standard 0.2" × 0.2" copper pads, and it delivers 600 W peak pulse power with 0.01% duty cycle repetitive capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 48 V nominal systems. |
| VBR (min/max) | 64.4 V / 71.2 V at 1 mA - Confirmed breakdown threshold range ensuring reliable turn-on during overvoltage events. |
| VC @ IPPM | ≤93.6 V at 6.4 A - Clamping voltage under 10/1000 µs surge; limits downstream IC stress to safe levels. |
| PPPM | 600 W - Peak pulse power handling capacity; supports IEC 61000-4-5 Level 4 surge immunity testing. |
| ID @ VWM | ≤1.0 µA - Ultra-low reverse leakage at standoff voltage; avoids parasitic loading on low-power sensor circuits. |
| TJ max. | +150 °C - Enables operation in under-hood automotive or industrial enclosures without derating. |
| Package | SMB (DO-214AA) - Surface-mount footprint (5.21 mm × 4.06 mm) compatible with automated placement and IPC-7351B land patterns. |
Pinout & Package
Package: SMB (DO-214AA), bidirectional configuration - no polarity marking; symmetrical terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (negative half-cycle) | Provides low-impedance path to ground for negative-going surges; identical electrical behavior to cathode due to bidirectionality. |
| Cathode | Transient current sink (positive half-cycle) | Provides low-impedance path to ground for positive-going surges; functionally interchangeable with anode in this bidirectional device. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal lines without polarity concerns. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness per stress test requirements. |
| 600 W peak pulse power | Meets IEC 61000-4-5 surge immunity up to 4 kV (line-to-earth) in properly designed PCB layouts. |
| Low clamping ratio (VC/VBR ≈ 1.46) | Minimizes voltage overshoot during clamping - critical for protecting 3.3 V or 5 V logic interfaces downstream. |
| MSL Level 1, 260 °C peak reflow | Supports lead-free assembly without moisture sensitivity limitations or baking requirements. |
Applications
| Industrial Sensor Interface | Automotive Body Control Module |
|---|---|
|
Use Scenario: Protecting analog output lines (e.g., 4–20 mA current loops) from inductive switching transients in factory automation PLCs. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed across signal line and ground, responding within <1 ns to clamp spikes. Use Value: Prevents latch-up or damage to precision DACs and op-amps by limiting voltage excursion to ≤93.6 V during 600 W surges. |
Use Scenario: Safeguarding LIN bus transceivers and microcontroller I/O pins against load dump and jump-start induced surges in door modules. IC Role / Device Role / Timing Role: Bidirectional voltage clamp on bidirectional data lines, absorbing energy without polarity biasing. Use Value: Maintains signal integrity during 12 V system transients while meeting AEC-Q101 qualification for automotive deployment. |
| Telecom Power Input Stage | Consumer USB-C Port Protection |
|
Use Scenario: Front-end protection of 48 V PoE-powered equipment against lightning-induced common-mode surges on Ethernet pairs. IC Role / Device Role / Timing Role: Primary-level TVS on DC input rail, coordinated with secondary-stage MOVs and filtering. Use Value: Limits input rail overshoot to <95 V during 10/1000 µs surges, preventing damage to DC/DC controllers and PMICs. |
Use Scenario: Overvoltage protection on VBUS and CC lines of USB-C receptacles exposed to accidental 20 V adapter misconnection. IC Role / Device Role / Timing Role: Fast-response shunt device placed between VBUS and GND, triggered before internal FETs fail. Use Value: Clamps 20 V misapplied transients to ≤93.6 V within nanoseconds, preserving port controller and battery management ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58CA-M3/5B | Halogen-free, RoHS-compliant variant; identical electrical specs and AEC-Q101 qualification. | No functional difference; selected when halogen-free compliance is mandated by OEM material declarations. | Choose SMBJ58CA-M3/5B if halogen-free content is required for environmental compliance reporting. |
| SAC58CA | Same VWM and VC, but in SOD-123FL package (smaller footprint, lower IPPM = 5.0 A, PPPM = 400 W). | Lower surge rating suits space-constrained consumer designs where full 600 W immunity is not required. | Choose SAC58CA only for compact layouts accepting reduced surge margin; not drop-in for SMBJ58CAHE3_B/I. |
Compared with SMBJ58CAHE3_B/I, SMBJ58CA-M3/5B offers identical protection performance with halogen-free materials, while SAC58CA trades surge capacity and thermal mass for smaller size - making SMBJ58CAHE3_B/I optimal for industrial and automotive applications demanding full 600 W rating and AEC-Q101 validation.
Availability
SMBJ58CAHE3_B/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body control modules, telecom power input stages, and consumer USB-C port protection requiring stable component supply and long-term lifecycle support.
Supply support for SMBJ58CAHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and application-specific optimization.
The SMBJ series targets high-energy transient suppression in harsh environments - engineered for automotive, industrial, and telecom applications where robustness, consistency, and AEC-Q101 qualification are mandatory.
FAQ
What is the clamping voltage of SMBJ58CAHE3_B/I at its rated peak pulse current?
The SMBJ58CAHE3_B/I clamps to a maximum of 93.6 V at its specified peak pulse current of 6.4 A under the 10/1000 µs waveform. This value is measured per JEDEC standards and confirmed in Vishay's datasheet revision 09-Jan-2024, Document Number 88392. The clamping voltage directly determines the maximum stress imposed on downstream circuitry during surge events, making it a critical parameter for system-level overvoltage design.
Is SMBJ58CAHE3_B/I suitable for automotive applications?
Yes, SMBJ58CAHE3_B/I is AEC-Q101 qualified, as indicated by the "HE3" suffix in its part number. This certification covers stress tests including high-temperature reverse bias, temperature cycling, and ESD robustness - validating its use in automotive body control modules, infotainment power supplies, and sensor nodes. The device operates reliably from –55 °C to +150 °C, supporting under-hood and cabin environments.
How does the bidirectional configuration of SMBJ58CAHE3_B/I affect its PCB layout?
The SMBJ58CAHE3_B/I has no polarity marking and functions identically in either orientation due to its symmetrical bidirectional structure. This eliminates orientation constraints during automated placement and simplifies layout - especially beneficial for differential or floating signal lines like RS-485, CAN, or LIN buses. No cathode band alignment is required, reducing assembly errors and enabling flexible routing.
What is the maximum reverse leakage current of SMBJ58CAHE3_B/I at its standoff voltage?
The SMBJ58CAHE3_B/I exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 58 V standoff voltage (VWM), measured at 25 °C. This ultra-low leakage prevents unwanted loading on high-impedance sensor outputs or battery-backed circuits. The specification is verified per ANSI/IEEE C62.35 and remains stable across temperature when used within its rated junction range.
Does SMBJ58CAHE3_B/I require special handling during reflow soldering?
No special handling is required: SMBJ58CAHE3_B/I is rated MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 260 °C. It can be processed using standard lead-free reflow profiles without pre-baking. The matte tin-plated leads comply with J-STD-002 and JESD 22-B102, ensuring reliable solder wetting and whisker resistance in high-volume manufacturing.
SMBJ58CAHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.4V
- Voltage - Clamping (Max) @ Ipp:
- 93.6V
- Current - Peak Pulse (10/1000µs):
- 6.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ58CAHE3_B/I FAQ
1.How can I place an order for SMBJ58CAHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ58CAHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ58CAHE3_B/I reliable?
The price and inventory of SMBJ58CAHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ58CAHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ58CAHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ58CAHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ58CAHE3_B/I?
SMBJ58CAHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ58CAHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ58CAHE3_B/I?
For technical support, including SMBJ58CAHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ58CAHE3_B/I requirements.
6.How does Aetrix verify that SMBJ58CAHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ58CAHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ58CAHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ58CAHE3_B/I?
All SMBJ58CAHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ58CAHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ58CAHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ58CAHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ58CAHE3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

