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Vishay General Semiconductor - Diodes Division SMBJ58CD-M3/H
- Part No.:
- SMBJ58CD-M3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ58CD-M3/H.pdf
- Description:
- TVS DIODE 58VWM 92.3VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,170
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Product details
Overview
SMBJ58CD-M3/H from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on signal or power lines. It features a 58 V stand-off voltage (VWM), 65.4–70.2 V breakdown voltage (VBR) at 1 mA, 92.3 V maximum clamping voltage (VC) at 6.5 A peak pulse current, and 600 W peak pulse power rating with a 10/1000 μs waveform.
For engineers reviewing the SMBJ58CD-M3/H datasheet, SMBJ58CD-M3/H pinout, SMBJ58CD-M3/H application, or SMBJ58CD-M3/H equivalent, this device is selected for robust overvoltage protection in industrial sensor interfaces, telecom line cards, and DC power rail surge suppression where bidirectional clamping, low leakage (<0.5 μA at VWM), and ±3.5% VBR tolerance are critical.
Technical Context
This bidirectional TVS operates symmetrically across both polarities, delivering identical clamping performance regardless of transient polarity-ideal for AC-coupled or floating signal paths. Its 600 W peak pulse power rating is validated per ANSI/IEEE C62.35 using a 10/1000 μs waveform at 0.01% duty cycle, with thermal derating above 25 °C ambient per Fig. 2.
The device achieves fast response time (<1 ns) and low incremental surge resistance to limit let-through energy during ESD or lightning-induced surges. It meets J-STD-020 MSL Level 1 (peak reflow ≤260 °C), has matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and carries halogen-free, RoHS-compliant, industrial-grade M3 suffix qualification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58 V - Maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 48 V DC systems. |
| VBR (min/max) | 65.4 V / 70.2 V at 1 mA - Tight ±3.5% tolerance ensures predictable turn-on across production lots and temperature. |
| VC @ IPPM | 92.3 V at 6.5 A - Clamping voltage under full 600 W surge; limits downstream IC stress to <93 V during worst-case transients. |
| IPPM | 6.5 A - Peak pulse current supported with 10/1000 μs waveform; determines minimum series impedance required for coordination. |
| PPPM | 600 W - Peak pulse power handling capability; enables protection against IEC 61000-4-5 Level 4 (4 kV/2 Ω) surges when properly laid out. |
| ID @ VWM | <0.5 μA - Ultra-low reverse leakage preserves signal integrity and battery life in always-on sensor nodes. |
| TJ max | 150 °C - Maximum junction temperature; supports operation in industrial enclosures up to +85 °C ambient with proper PCB copper area. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); recommended mounting pad layout per Vishay spec: 5.0 mm × 5.0 mm copper area for optimal thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional terminal pair | No polarity marking; terminals are interchangeable-enables placement without orientation check in automated assembly. |
| Case (body) | Non-electrical mechanical interface | UL 94 V-0 rated molding compound; provides flame resistance and mechanical stability during reflow and board flex. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise, repeatable clamping thresholds across batches-critical for compliance with IEC 61000-4-5 immunity margins. |
| 600 W peak pulse power (10/1000 μs) | Supports robust protection against high-energy surges including indirect lightning and inductive switching events in industrial environments. |
| Low leakage <0.5 μA at VWM | Minimizes standby power loss and avoids false triggering in high-impedance analog or RF signal paths. |
| MSL Level 1, 260 °C peak reflow | Allows single-pass lead-free reflow without moisture-related popcorning-eliminates pre-bake requirement in high-volume SMT lines. |
| M3 suffix (JESD 201 Class 2 whisker test) | Guarantees long-term reliability in vibration-prone applications such as transportation and factory automation equipment. |
Applications
| Industrial Sensor Interface | Telecom Line Card Protection |
|---|---|
|
Use Scenario: Protecting RS-485 transceivers and analog sensor outputs (e.g., 4–20 mA loops) from EFT and surge events in factory-floor PLC modules. IC Role / Device Role: Bidirectional clamping element placed across differential signal pair or between signal and ground. Use Value: Maintains signal fidelity during transients by limiting voltage excursion to ≤92.3 V while drawing only 6.5 A peak-reducing stress on upstream driver ICs. |
Use Scenario: Safeguarding Ethernet PHY interfaces and POTS line drivers against induced surges from nearby AC mains or lightning coupling. IC Role / Device Role: Primary surge clamp on tip/ring lines prior to transformer or isolation barrier. Use Value: Symmetric clamping ensures equal protection for positive and negative surges-essential for balanced AC-coupled telecom signals. |
| DC Power Rail Suppression | Automotive Body Control Module |
|
Use Scenario: Secondary overvoltage protection on 48 V auxiliary power rails in data center PSUs and PoE injectors. IC Role / Device Role: Parallel-connected TVS shunting transient energy to ground during load dump or hot-swap events. Use Value: 58 V VWM aligns with 48 V nominal system margin; 92.3 V VC stays below typical 100 V MOSFET drain ratings. |
Use Scenario: Protecting LIN bus transceivers and microcontroller I/O pins from battery reverse connection and jump-start spikes. IC Role / Device Role: Bidirectional clamp on LIN data line referenced to chassis ground. Use Value: M3 qualification and -55 °C to +150 °C operating range ensure reliability in under-hood automotive environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58CA-M3/5B (Vishay) | Same electrical specs and SMB package; differs only in tape-and-reel packaging (5B = 3200 pcs/reel vs. H = 750 pcs/reel). | No functional difference; identical use in all circuits requiring SMBJ58CD-M3/H. | Select SMBJ58CA-M3/5B for high-volume automated assembly requiring larger reel quantities. |
| SMCJ58CA (ON Semiconductor) | Same VWM (58 V), VC (92.3 V), and PPPM (600 W), but in larger SMC (DO-214AB) package (7.11 mm × 6.22 mm). | Requires PCB layout change due to larger footprint and higher thermal mass; better suited for higher average power dissipation. | Choose SMCJ58CA only if board space allows and enhanced thermal performance under repetitive surge is needed. |
Compared with SMBJ58CD-M3/H, SMBJ58CA-M3/5B offers identical protection in identical form factor with different packaging logistics, while SMCJ58CA delivers equivalent clamping performance in a physically larger package that trades size for improved steady-state thermal handling-neither is pin-compatible without layout revision.
Availability
SMBJ58CD-M3/H is available at Aetrix Electronics and suitable for industrial sensor interfaces, telecom line card protection, and DC power rail suppression requiring stable component supply, consistent M3 qualification, and verified bidirectional TVS performance.
Supply support for SMBJ58CD-M3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and industrial-grade qualification.
The SMBJ series is engineered for high-energy transient suppression in harsh environments-targeting industrial automation, telecom infrastructure, and automotive body electronics where repeatable clamping and MSL-1 reflow compatibility are mandatory.
FAQ
What does the "CD" suffix indicate in SMBJ58CD-M3/H?
The "CD" suffix in SMBJ58CD-M3/H denotes a bidirectional configuration, meaning the device clamps voltage transients equally in both polarities without cathode marking. This is confirmed in Vishay's documentation: "For bidirectional devices use CD suffix (e.g. SMBJ5.0CD). Electrical characteristics apply in both directions." The SMBJ58CD-M3/H therefore functions identically for positive and negative surges, unlike unidirectional "D" variants.
What is the maximum clamping voltage of SMBJ58CD-M3/H and under what test condition?
The maximum clamping voltage (VC) of SMBJ58CD-M3/H is 92.3 V, measured at a peak pulse current (IPPM) of 6.5 A using a 10/1000 μs waveform. This value is specified in the Electrical Characteristics table on page 2 of Vishay document 87606 and defines the upper voltage limit imposed on protected circuitry during a full-rated surge event.
Is SMBJ58CD-M3/H RoHS-compliant and halogen-free?
Yes, SMBJ58CD-M3/H is RoHS-compliant and halogen-free, as explicitly stated in the Mechanical Data section: "Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade." The M3 suffix certifies compliance with both environmental standards and JESD 201 Class 2 whisker resistance, making it suitable for regulated industrial and automotive applications.
What is the thermal resistance junction-to-ambient (RθJA) for SMBJ58CD-M3/H?
The typical thermal resistance junction-to-ambient (RθJA) for SMBJ58CD-M3/H is 125 °C/W when mounted on the minimum recommended pad layout, and 100 °C/W when mounted on a 5.0 mm × 5.0 mm copper pad area. These values are listed in the Thermal Characteristics table (page 3, doc 87606) and directly impact steady-state power derating above 25 °C ambient.
Can SMBJ58CD-M3/H be used in place of a unidirectional SMBJ58D-M3/H?
No-SMBJ58CD-M3/H is bidirectional and lacks polarity marking, while SMBJ58D-M3/H is unidirectional with a cathode band. Substituting one for the other risks incorrect clamping behavior: the unidirectional part blocks reverse voltage until breakdown, whereas the bidirectional part conducts symmetrically. Circuit topology (e.g., grounded vs. floating reference) must match the device's polarity architecture; SMBJ58CD-M3/H is not a drop-in replacement for SMBJ58D-M3/H.
SMBJ58CD-M3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 65.4V
- Voltage - Clamping (Max) @ Ipp:
- 92.3V
- Current - Peak Pulse (10/1000µs):
- 6.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ58CD-M3/H FAQ
1.How can I place an order for SMBJ58CD-M3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ58CD-M3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ58CD-M3/H reliable?
The price and inventory of SMBJ58CD-M3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ58CD-M3/H is usually 5 days.
3.What payment methods are accepted for SMBJ58CD-M3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ58CD-M3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ58CD-M3/H?
SMBJ58CD-M3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ58CD-M3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ58CD-M3/H?
For technical support, including SMBJ58CD-M3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ58CD-M3/H requirements.
6.How does Aetrix verify that SMBJ58CD-M3/H is sourced from the original manufacturer or authorized distributors?
All SMBJ58CD-M3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ58CD-M3/H meets industry standards.
7.What is the process for return or replacement of SMBJ58CD-M3/H?
All SMBJ58CD-M3/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ58CD-M3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ58CD-M3/H part is unused and in its original packaging.
Return procedure for SMBJ58CD-M3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ58CD-M3/H Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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