Vishay General Semiconductor - Diodes Division SMBJ58D-M3/H

Overview

SMBJ58D-M3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 58 V stand-off voltage (VWM), 65.4–70.2 V breakdown voltage (VBR) at 1 mA, 92.3 V maximum clamping voltage (VC) at 6.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.

For engineers reviewing the SMBJ58D-M3/H datasheet, SMBJ58D-M3/H pinout, SMBJ58D-M3/H application, or SMBJ58D-M3/H equivalent, key selection criteria include unidirectional polarity, ±3.5 % VBR tolerance, low leakage (<0.5 μA at VWM), MSL Level 1 moisture sensitivity, and halogen-free RoHS-compliant construction per JESD 201 Class 2 whisker test.

Technical Context

This TVS diode operates as a clamping device in parallel with protected circuitry, conducting only when reverse voltage exceeds VBR to limit transient energy. Its low incremental surge resistance and fast response time ensure effective suppression of ESD, lightning-induced surges, and inductive switching spikes without affecting normal operation below 58 V.

Thermal design relies on junction-to-ambient thermal resistance of 125 °C/W (on minimum pad layout) and 100 °C/W (on 5 mm × 5 mm copper pad), with maximum junction temperature rated at +150 °C. Power derating begins above 25 °C ambient, dropping to 5.0 W at 50 °C case temperature.

Key Specifications

Pinout & Package

Two-terminal unidirectional TVS diode in SMB (DO-214AA) package. Cathode indicated by molded band; anode is opposite end. Matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability standards. M3 suffix denotes halogen-free, RoHS-compliant, industrial-grade construction with JESD 201 Class 2 whisker resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMBJ58A-M3/H, SMBJ58D-M3/H trades ±2.5 % VBR tolerance for broader manufacturing yield and lower unit cost; versus SMCJ58A, it offers identical protection level in 40 % smaller footprint but with lower single-pulse energy capacity.

Availability

SMBJ58D-M3/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SMBJ58D-M3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and manufacturability.

The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for robust, low-leakage transient suppression in high-volume industrial, automotive, and communications equipment.

FAQ

What is the maximum clamping voltage of SMBJ58D-M3/H at its rated peak pulse current?

The SMBJ58D-M3/H has a maximum clamping voltage (VC) of 92.3 V at its rated peak pulse current (IPPM) of 6.5 A, measured using the standard 10/1000 μs double-exponential waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMBJ58D-M3/H maintains this clamping performance across its full operating temperature range.

Is SMBJ58D-M3/H suitable for bidirectional transient protection?

No, SMBJ58D-M3/H is a unidirectional TVS diode, indicated by the "D" suffix (not "CD"). It conducts only in reverse bias above VBR and must be oriented with the cathode band toward the protected line. For bidirectional protection-such as on AC lines or differential buses-Vishay specifies parts with the "CD" suffix (e.g., SMBJ58CD-M3/H), which exhibit symmetrical clamping in both polarities. Using SMBJ58D-M3/H in bidirectional applications risks failure during positive-going transients.

What does the "-M3/H" suffix mean in SMBJ58D-M3/H?

The "-M3/H" suffix in SMBJ58D-M3/H indicates halogen-free, RoHS-compliant construction (M3) and packaging in 7″ diameter plastic tape and reel (H), with a base quantity of 750 units per reel. The M3 designation confirms compliance with JESD 201 Class 2 whisker resistance testing and IPC-1752A material declarations. The /H delivery mode ensures compatibility with standard pick-and-place feeders in high-speed SMT lines.

Can SMBJ58D-M3/H replace SMAJ58A in an existing design?

SMBJ58D-M3/H is not a direct replacement for SMAJ58A due to package and thermal differences: SMAJ uses the smaller SMA (DO-214AC) package with higher RθJA (~150 °C/W), while SMBJ58D-M3/H uses SMB (DO-214AA) with lower RθJA (125 °C/W). Though both share 58 V VWM and 600 W PPPM, the SMBJ variant requires revised land pattern and may alter thermal behavior under sustained surge conditions. Layout redesign and thermal validation are required before substitution.

What is the reverse leakage current specification for SMBJ58D-M3/H at its stand-off voltage?

The SMBJ58D-M3/H specifies a maximum reverse leakage current (ID) of 0.5 μA at its 58 V stand-off voltage (VWM), measured at TA = 25 °C. This ultra-low leakage ensures minimal impact on high-impedance circuits such as sensor bias networks or battery-monitoring inputs. Leakage remains below 1.0 μA up to +85 °C ambient, supporting reliable operation in industrial temperature ranges without signal drift or excessive quiescent power draw.