Vishay General Semiconductor - Diodes Division SMBJ58D-M3/I
- Part No.:
- SMBJ58D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ58D-M3/I.pdf
- Description:
- TVS DIODE 58VWM 92.3VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ58D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features a 58 V stand-off voltage (VWM), 65.4–70.2 V breakdown voltage (VBR) at 1 mA, 92.3 V maximum clamping voltage (VC) at 6.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform.
For engineers reviewing the SMBJ58D-M3/I datasheet, SMBJ58D-M3/I pinout, SMBJ58D-M3/I application, or SMBJ58D-M3/I equivalent, key selection criteria include unidirectional polarity, ±3.5 % VBR tolerance, low leakage (<0.5 μA at VWM), M3 halogen-free RoHS-compliant construction, and compatibility with automated SMT placement on standard PCB pad layouts.
Technical Context
This TVS diode operates as a voltage-clamping protection device placed in parallel with sensitive circuit nodes. Its silicon avalanche structure enables sub-nanosecond response to transients, with clamping action triggered when reverse voltage exceeds VBR, limiting downstream voltage to ≤92.3 V at 6.5 A IPPM.
Thermal performance is defined by RθJA = 125 °C/W (on minimum pad) and RθJM = 20 °C/W, supporting operation from –55 °C to +150 °C junction temperature. Power derating begins above TA = 25 °C, with 1.0 W steady-state dissipation at ambient and 5.0 W at TM = 50 °C on infinite heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 58 V - Maximum continuous reverse operating voltage before significant conduction begins |
| VBR (Breakdown Voltage) | 65.4–70.2 V at 1 mA - Tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC (Clamping Voltage) | 92.3 V at IPPM = 6.5 A - Limits transient voltage seen by protected IC or MOSFET during surge |
| PPPM (Peak Pulse Power) | 600 W with 10/1000 μs waveform - Withstands high-energy surges common in industrial motor drives and telecom interfaces |
| ID (Reverse Leakage) | <0.5 μA at VWM - Minimizes standby power loss and avoids false triggering in low-current sensor circuits |
| Package | SMB (DO-214AA) - Surface-mount footprint compatible with IPC-7351B standard, supports automated pick-and-place |
| Polarity | Unidirectional - Cathode band denotes terminal; blocks forward current, clamps reverse transients only |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case meeting UL 94 V-0 flammability rating; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards; M3 suffix indicates halogen-free, RoHS-compliant, industrial-grade construction with JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path / low-impedance return during clamping | Connected to system ground or lower-potential rail; carries full surge current during transient suppression |
| Cathode (banded end) | Reverse-biased clamping node | Connected to protected line (e.g., 48 V supply rail or RS-485 bus); initiates avalanche conduction when V > VBR |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with system overvoltage thresholds without margin stacking in multi-stage protection schemes |
| 600 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 Level 4 (4 kV line-to-line, 2 kV line-to-ground) surge immunity in industrial power supplies |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., <100 ns edges), improving protection of wide-bandwidth analog front-ends |
| MSL Level 1 (260 °C peak reflow) | Allows single-pass lead-free reflow assembly without moisture sensitivity concerns or baking requirements |
| Halogen-free & RoHS-compliant (M3) | Fulfills environmental compliance mandates for global industrial and telecom equipment without compromising thermal or electrical performance |
Applications
| Industrial Motor Drive Protection | Telecom DC Power Input |
|---|---|
|
Use Scenario: Suppresses inductive kickback from 24–48 V DC motor control circuits during MOSFET switching. IC Role / Device Role / Timing Role: Unidirectional TVS placed between motor supply rail and ground to clamp flyback spikes before they reach gate drivers or microcontrollers. Use Value: Limits transient voltage to ≤92.3 V, preventing latch-up or gate oxide damage in 60 V-rated power MOSFETs and logic-level drivers. |
Use Scenario: Protects primary-side DC input of telecom power modules against lightning-induced surges on -48 V distribution buses. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted at board edge to absorb bulk energy before it propagates into DC/DC converters and PMICs. Use Value: Withstands 600 W pulses per IEC 61000-4-5, enabling compliance with GR-1089-CORE Level 3 surge immunity requirements. |
| Automotive Body Control Module (BCM) | Industrial Sensor Signal Line |
|
Use Scenario: Shields LIN bus transceivers and load switch controllers from battery dump load and load-dump transients. IC Role / Device Role / Timing Role: Unidirectional clamping device connected between VBAT-supplied rail and ground, triggered only during overvoltage events. Use Value: 58 V VWM aligns with 12 V automotive systems with 20 % tolerance (up to ~60 V), allowing normal operation while blocking >65.4 V faults. |
Use Scenario: Guards analog output lines of pressure/temperature sensors in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 μA) TVS placed across sensor output and reference ground to prevent ESD damage without loading the signal path. Use Value: Sub-μA leakage preserves accuracy of 4–20 mA loop signals and avoids offset errors in precision instrumentation amplifiers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A-M3/I | Bidirectional variant; symmetrical VBR (65.4–70.2 V) in both polarities; no cathode band marking | Required where AC-coupled lines (e.g., RS-485, CAN) need clamping for both positive and negative transients | Select SMBJ58A-M3/I only if bidirectional protection is mandated; SMBJ58D-M3/I is preferred for DC rails with defined polarity |
| SMCJ58A-M3/I | Larger SMC (DO-214AB) package; same VWM/VBR/VC specs but higher 1500 W PPPM rating and lower RθJA (60 °C/W) | Suitable for higher-energy surge environments (e.g., outdoor telecom cabinets) where 600 W is insufficient | Choose SMCJ58A-M3/I when surge energy exceeds SMBJ58D-M3/I capability; requires larger PCB footprint and layout revision |
Compared with SMBJ58D-M3/I, SMBJ58A-M3/I provides bidirectional clamping at identical voltage ratings but lacks polarity identification, while SMCJ58A-M3/I delivers 2.5× higher surge power handling in a physically larger package-requiring trade-offs between board space, thermal margin, and protection level.
Availability
SMBJ58D-M3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC power inputs, and automotive body control modules requiring stable component supply with guaranteed long-term sourcing and consistent M3 halogen-free compliance.
Supply support for SMBJ58D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for robust transient suppression in harsh environments-targeting industrial automation, telecommunications infrastructure, and automotive electronics where repeatable clamping performance and AEC-Q200-aligned quality are critical.
FAQ
What is the maximum clamping voltage of SMBJ58D-M3/I at its rated peak pulse current?
The SMBJ58D-M3/I has a maximum clamping voltage (VC) of 92.3 V when subjected to its peak pulse current (IPPM) of 6.5 A under the standard 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and guarantees the upper voltage limit imposed on protected circuitry during surge events, making SMBJ58D-M3/I suitable for safeguarding 60 V-rated components in industrial power systems.
Is SMBJ58D-M3/I compatible with lead-free reflow soldering processes?
Yes, SMBJ58D-M3/I meets MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 260 °C, fully compatible with standard lead-free (SnAgCu) soldering profiles. Its matte tin-plated terminals comply with J-STD-002 and JESD 22-B102, ensuring reliable wetting and joint integrity without pre-baking or special handling-critical for high-yield SMT manufacturing of SMBJ58D-M3/I.
How does the VWM of 58 V relate to the breakdown voltage range of SMBJ58D-M3/I?
The 58 V stand-off voltage (VWM) of SMBJ58D-M3/I is the maximum DC or continuous reverse voltage the device can block without entering avalanche conduction; its specified breakdown voltage (VBR) range of 65.4–70.2 V at 1 mA ensures ≥7.4 V margin above VWM. This design margin prevents false triggering during normal operation while guaranteeing activation within 100 ns when transients exceed the lower VBR limit-key for reliable SMBJ58D-M3/I deployment in noisy 48 V systems.
What is the reverse leakage current specification for SMBJ58D-M3/I at its rated VWM?
SMBJ58D-M3/I exhibits a maximum reverse leakage current (ID) of 0.5 μA at its 58 V stand-off voltage (VWM) and TA = 25 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor interfaces and minimizes quiescent power loss in always-on industrial control circuits-confirming SMBJ58D-M3/I's suitability for precision analog and battery-backed applications where standby current matters.
Does SMBJ58D-M3/I have a defined polarity, and how is it marked on the package?
Yes, SMBJ58D-M3/I is a unidirectional TVS diode with clearly defined polarity: the cathode is identified by a distinct band printed on the SMB (DO-214AA) package body. During PCB layout, the banded end must be connected to the line being protected (e.g., 48 V rail), while the anode connects to ground-ensuring correct orientation for reverse-biased clamping operation and preventing forward conduction during normal system operation of SMBJ58D-M3/I.
SMBJ58D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 65.4V
- Voltage - Clamping (Max) @ Ipp:
- 92.3V
- Current - Peak Pulse (10/1000µs):
- 6.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ58D-M3/I FAQ
1.How can I place an order for SMBJ58D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ58D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ58D-M3/I reliable?
The price and inventory of SMBJ58D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ58D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ58D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ58D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ58D-M3/I?
SMBJ58D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ58D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ58D-M3/I?
For technical support, including SMBJ58D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ58D-M3/I requirements.
6.How does Aetrix verify that SMBJ58D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ58D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ58D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ58D-M3/I?
All SMBJ58D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ58D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ58D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ58D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ58D-M3/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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