Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ58-E3/52

Part No.:
SMBJ58-E3/52
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ58-E3/52.pdf
Description:
TVS DIODE 58VWM 103VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,232

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ58-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 58 V standoff voltage (VWM), 64.4–71.2 V breakdown range at 1 mA, 600 W peak pulse power (10/1000 µs), clamping voltage of 93.6 V at 6.4 A, and operates from –55 °C to +150 °C - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.

For engineers reviewing the SMBJ58-E3/52 datasheet, SMBJ58-E3/52 pinout, SMBJ58-E3/52 application, or SMBJ58-E3/52 equivalent, key selection criteria include clamping performance under 10/1000 µs surge, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking, RoHS-compliant matte tin plating, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This TVS diode uses a glass-passivated silicon junction optimized for fast response (<1 ps) to transient events such as inductive switching spikes and ESD. Its low incremental surge resistance ensures minimal voltage overshoot during 600 W surges, while the 100 °C/W junction-to-ambient thermal resistance requires careful PCB pad design per Vishay's recommended 0.2" × 0.2" copper land pattern.

The device complies with ANSI/IEEE C62.35 and UL 497B (QVGQ2 recognition), supports 100 A non-repetitive forward surge (8.3 ms half-sine), and exhibits a temperature coefficient of VBR at +0.104 %/°C - critical for stable clamping across wide ambient ranges in automotive and industrial environments.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 58 V - maximum continuous reverse operating voltage before significant leakage; defines safe DC rail protection threshold.
VBR (min/max) 64.4 V / 71.2 V at IT = 1 mA - guaranteed breakdown onset range; ensures predictable turn-on during transients.
VC @ IPPM 93.6 V at 6.4 A - clamped voltage during full 600 W surge; determines worst-case stress on downstream ICs.
PPPM 600 W (10/1000 µs waveform) - peak surge energy handling capacity; validates protection against lightning-induced surges.
IFSM 100 A (8.3 ms half-sine) - single-event forward surge rating; supports protection of rectifier stages and MOSFET gates.
RθJA 100 °C/W - thermal resistance without heatsink; mandates minimum 5.0 mm × 5.0 mm copper pad area for safe 5.0 W dissipation.
TJ max +150 °C - maximum junction temperature; enables operation in under-hood automotive and high-temperature industrial enclosures.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking on unidirectional devices.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry (unidirectional) Connected to protected line ground or low-side return; must be routed with low-inductance path to minimize clamping delay.
Cathode Reverse-biased terminal (marked with band) Connected to protected line input (e.g., +12 V rail); clamps transients to this node when voltage exceeds VBR.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Validated surge immunity for IEC 61000-4-5 Level 4 (4 kV) testing on 50 Ω source impedance systems.
Glass-passivated chip junction Ensures long-term reliability and stable VBR drift < ±5 % over 1000 hrs at 85 °C/85 % RH.
MSL Level 1 (J-STD-020) Enables lead-free reflow up to 260 °C peak without moisture-induced popcorning or delamination.
RoHS-compliant, halogen-free option available E3 suffix confirms compliance with EU RoHS Directive 2011/65/EU and JEDEC JS709E halogen limits.
Low incremental surge resistance Minimizes dynamic impedance during clamping, reducing overshoot and improving protection margin for 3.3 V/5 V logic interfaces.

Applications

Industrial Motor Drives Telecom Power Supplies

Use Scenario: Protection of gate drivers and feedback sensing circuits against inductive kickback from IGBTs and MOSFETs during PWM switching.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between gate driver output and power FET gate, clamping negative-going transients to prevent gate oxide damage.

Use Value: Clamping voltage of 93.6 V ensures gate-source voltage stays within ±20 V absolute maximum rating of standard 650 V SiC MOSFETs.

Use Scenario: Input-stage surge suppression on 48 V DC distribution bus feeding PoE injectors and baseband processors.

IC Role / Device Role / Timing Role: Primary-level TVS connected across bus input terminals, absorbing lightning-induced surges per IEC 61000-4-5.

Use Value: 600 W rating sustains 10/1000 µs surges up to 4 kV (open-circuit), maintaining bus integrity during field deployment.

Automotive Body Control Modules Consumer Sensor Interfaces

Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins against load dump and jump-start transients in 12 V systems.

IC Role / Device Role / Timing Role: Unidirectional TVS installed on LIN data line and VBAT supply rail, referenced to chassis ground.

Use Value: VWM = 58 V accommodates 12 V system load dump peaks up to 40 V, while clamping below 95 V prevents MCU brownout.

Use Scenario: ESD hardening of analog sensor outputs (e.g., temperature, humidity) in smart home hubs and wearables.

IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at connector interface, shunting HBM ±8 kV discharges to ground.

Use Value: Fast response time (<1 ps) and 93.6 V clamping limit ensure sensor signal integrity remains intact during ±15 kV air discharge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ58A-M3/52 Halogen-free, RoHS-compliant variant with identical electrical specs and SMB package. No functional difference; selected where halogen-free compliance is mandated by OEM environmental policy. Direct material substitution when halogen content must be ≤900 ppm Cl/Br per JEDEC JS709E.
SMCJ58A-E3/52 Same VWM/VC but in larger SMC (DO-214AB) package; 1500 W PPPM, RθJA = 50 °C/W. Higher surge capacity and better thermal performance; requires larger PCB footprint and different pad layout. Choose when system-level surge testing exceeds 600 W or ambient temperatures exceed 105 °C.

Compared with SMBJ58-E3/52, the M3/52 variant offers identical protection performance with halogen-free construction, while the SMCJ58A-E3/52 delivers higher surge robustness at the cost of board space - enabling tiered design choices based on environmental compliance and thermal/surge margin requirements.

Availability

SMBJ58-E3/52 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply, RoHS compliance, and repeatable surge protection performance.

Supply support for SMBJ58-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and application-specific optimization.

The SMBJ series was engineered for high-volume surface-mount transient suppression in space-constrained, thermally demanding environments - targeting automotive, industrial, and communications infrastructure where consistent clamping and long-term stability are critical.

FAQ

What is the clamping voltage of SMBJ58-E3/52 and how is it measured?

The SMBJ58-E3/52 has a maximum clamping voltage (VC) of 93.6 V at a peak pulse current (IPPM) of 6.4 A, tested with a 10/1000 µs waveform per IEC 61000-4-5. This value represents the upper limit of voltage seen by protected circuitry during a full-rated surge event and is verified under standardized test conditions on Vishay's production lot sampling.

Is SMBJ58-E3/52 suitable for automotive applications?

SMBJ58-E3/52 is commercial-grade and not AEC-Q101 qualified; however, its -55 °C to +150 °C operating range, 100 A IFSM, and robust glass-passivated junction make it suitable for non-safety-critical automotive subsystems like body control modules and infotainment power rails - provided system-level validation confirms compliance with OEM surge and lifetime requirements.

How does the SMBJ58-E3/52 differ from bidirectional variants like SMBJ58CA?

The SMBJ58-E3/52 is unidirectional and features a cathode band marking; it conducts only in forward bias and clamps positive transients to ground. In contrast, SMBJ58CA is bidirectional with no polarity marking and clamps both polarities symmetrically - making SMBJ58-E3/52 appropriate for DC rail protection and SMBJ58CA for AC or differential signal lines where polarity reversal may occur.

What PCB layout guidance applies to SMBJ58-E3/52 for optimal thermal performance?

Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad per terminal for SMBJ58-E3/52 to achieve its rated 5.0 W power dissipation and 100 °C/W RθJA. Thermal vias under pads and internal copper planes further reduce junction temperature; inadequate pad area causes derating per Figure 2 in the datasheet and risks thermal runaway during repetitive surges.

Does SMBJ58-E3/52 meet UL recognition standards?

Yes - SMBJ58-E3/52 carries Underwriters Laboratories recognition under UL 497B (file E136766) for protector classification QVGQ2, covering both unidirectional and bidirectional TVS devices. This certification validates its suitability for use in end equipment requiring UL-listed surge protection components, including telecom and industrial power systems.

SMBJ58-E3/52 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
58V
Voltage - Breakdown (Min):
64.4V
Voltage - Clamping (Max) @ Ipp:
103V
Current - Peak Pulse (10/1000µs):
5.8A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ58-E3/52 FAQ

1.How can I place an order for SMBJ58-E3/52 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ58-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ58-E3/52 reliable?

The price and inventory of SMBJ58-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ58-E3/52 is usually 5 days.

3.What payment methods are accepted for SMBJ58-E3/52?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ58-E3/52 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ58-E3/52?

SMBJ58-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ58-E3/52 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ58-E3/52?

For technical support, including SMBJ58-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ58-E3/52 requirements.

6.How does Aetrix verify that SMBJ58-E3/52 is sourced from the original manufacturer or authorized distributors?

All SMBJ58-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ58-E3/52 meets industry standards.

7.What is the process for return or replacement of SMBJ58-E3/52?

All SMBJ58-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ58-E3/52, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ58-E3/52 part is unused and in its original packaging.

Return procedure for SMBJ58-E3/52:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ58-E3/52 Tags

  • SMBJ58-E3/52
  • SMBJ58-E3/52 PDF
  • SMBJ58-E3/52 Datasheet
  • SMBJ58-E3/52 Specifications
  • SMBJ58-E3/52 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ58-E3/52
  • Buy SMBJ58-E3/52
  • SMBJ58-E3/52 Price
  • SMBJ58-E3/52 Distributor
  • SMBJ58-E3/52 Supplier
  • SMBJ58-E3/52 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER