My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ58HE3/5B
;;2.jpg)
- Part No.:
- SMBJ58HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ58HE3/5B.pdf
- Description:
- TVS DIODE 58VWM 103VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,342
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ58HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 58 V stand-off voltage (VWM), 64.4–71.2 V breakdown voltage (VBR) at 1 mA, 93.6 V maximum clamping voltage (VC) at 6.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ58HE3/5B datasheet, SMBJ58HE3/5B pinout, SMBJ58HE3/5B application, or SMBJ58HE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when transient voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the low incremental surge resistance enables effective energy diversion during ESD or lightning-induced surges.
The SMBJ58HE3/5B is rated for 600 W peak pulse power under 10/1000 µs waveform with 0.01% duty cycle, and supports repetitive surge events when thermally managed per derating curves. Its unidirectional configuration requires cathode-band orientation during PCB layout, and it meets MSL Level 1 per J-STD-020 with 260 °C reflow peak temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 64.4 V / 71.2 V at IT = 1 mA - defines guaranteed avalanche onset window for design margining |
| VC | 93.6 V at IPPM = 6.4 A - clamped voltage seen by protected circuit during worst-case surge |
| PPPM | 600 W - peak transient power dissipation capability with standard 10/1000 µs test waveform |
| IPPM | 6.4 A - maximum non-repetitive peak pulse current the device can safely conduct |
| TJ max | +150 °C - maximum junction temperature enabling operation in high-ambient industrial environments |
| RθJA | 100 °C/W - thermal resistance from junction to ambient, defining required copper pad area for thermal management |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to lower-potential side of protected line | Must be tied to ground or return path for unidirectional clamping action |
| Cathode | Current exit terminal in forward bias; marked with band on package | Connected to protected line (e.g., 58 V rail or signal input) to enable reverse-bias clamping |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance |
| 600 W peak pulse power | Supports robust protection against IEC 61000-4-5 Level 4 (4 kV/2 Ω) surge events without failure |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage (<1 µA at VWM) across temperature and life |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with 260 °C peak profile |
| UL 497B recognized | Qualified as surge protector under Underwriters Laboratories safety standard for telecom/data line applications |
Applications
| Industrial Power Supply Protection | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: Protecting 48 V DC input rails in programmable logic controllers (PLCs) against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between input rail and ground to limit overvoltage stress on downstream DC-DC converters and microcontrollers. Use Value: Limits transient voltage to ≤93.6 V during 600 W surges, preventing latch-up or gate oxide damage in 60 V-rated power stages. |
Use Scenario: Safeguarding LIN bus interface circuits and power inputs in BCM modules exposed to battery transients per ISO 7637-2 Pulse 1/2a/5a. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V supply line and LIN signal line, leveraging AEC-Q101 qualification for automotive deployment. Use Value: Withstands 100 A surge current (IFSM) and maintains <1 µA leakage at 58 V, ensuring low standby power impact and long-term reliability. |
| Telecom Remote Radio Unit (RRU) | Industrial Sensor Signal Conditioning |
Use Scenario: Protecting Ethernet PHY power pins and RS-485 transceiver lines in outdoor base station RRUs subject to lightning-induced surges. IC Role / Device Role / Timing Role: Secondary-level TVS on isolated 3.3 V/5 V auxiliary rails and data lines, coordinated with primary GDT or MOV stages. Use Value: Fast <1 ns response and 93.6 V clamping ensure sensitive PHY ICs remain below absolute maximum ratings during multi-kV transients. |
Use Scenario: Shielding analog front-end inputs (e.g., 4–20 mA loop receivers or RTD interfaces) from ESD and cable discharge events in factory automation sensors. IC Role / Device Role / Timing Role: Low-capacitance unidirectional clamp on signal path, placed immediately before op-amp input or ADC driver stage. Use Value: Junction capacitance <100 pF (typ.) avoids signal integrity degradation while providing ±15 kV HBM ESD immunity per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ58A-E3/5B | Commercial-grade version without AEC-Q101 qualification; identical electrical specs and SMB package | Lacks automotive qualification; suitable for industrial/commercial designs where AEC-Q101 is not mandated | Select SMBJ58A-E3/5B when cost optimization is prioritized and automotive reliability testing is unnecessary |
| SMAJ58AHE3/A | Same VWM/VC but in smaller SMA (DO-214AC) package; lower PPPM = 400 W; RθJA = 140 °C/W | Reduced surge handling capacity and higher thermal resistance limit use to lower-energy transients | Choose SMAJ58AHE3/A only for space-constrained layouts where 400 W peak power suffices and thermal margin allows |
Compared with SMBJ58A-E3/5B, the SMBJ58HE3/5B adds AEC-Q101 validation for automotive use without altering clamping behavior; versus SMAJ58AHE3/A, it delivers 50% higher surge power and superior thermal performance in the same footprint family, making it preferred for demanding industrial and automotive power-line protection.
Availability
SMBJ58HE3/5B is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, telecom remote radio units, and industrial sensor signal conditioning requiring stable component supply and AEC-Q101-compliant surge protection.
Supply support for SMBJ58HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific performance.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where robust overvoltage protection is mission-critical.
FAQ
What is the clamping voltage of SMBJ58HE3/5B at its rated peak pulse current?
The SMBJ58HE3/5B has a maximum clamping voltage (VC) of 93.6 V at 6.4 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ58HE3/5B maintains this clamping performance across its full operating temperature range.
Is SMBJ58HE3/5B suitable for automotive applications?
Yes, SMBJ58HE3/5B is AEC-Q101 qualified, meaning it has passed stress tests including temperature cycling, high-temperature reverse bias, and surge endurance required for automotive electronic components. Its RoHS-compliant construction and MSL Level 1 rating further support automated manufacturing in automotive supply chains. The SMBJ58HE3/5B is explicitly designated for automotive use via the "HE3" suffix.
What is the difference between SMBJ58HE3/5B and SMBJ58A-E3/5B?
The SMBJ58HE3/5B and SMBJ58A-E3/5B share identical electrical specifications, SMB (DO-214AA) package, and RoHS compliance, but only the HE3 version carries AEC-Q101 qualification. This makes SMBJ58HE3/5B suitable for automotive applications where qualification is mandatory, while SMBJ58A-E3/5B serves commercial/industrial uses. Both use the same 13" tape-and-reel packaging (5B).
Does SMBJ58HE3/5B have bidirectional capability?
No, SMBJ58HE3/5B is a unidirectional TVS diode, indicated by the absence of "CA" suffix and presence of cathode band marking. Bidirectional variants (e.g., SMBJ58CA) are available separately and exhibit symmetrical clamping in both polarities. Using SMBJ58HE3/5B in bidirectional signal paths would require external circuitry or a different device type.
What is the thermal resistance and recommended PCB layout for SMBJ58HE3/5B?
The SMBJ58HE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperatures under repeated surges, designers should use minimum recommended pad layout per Vishay document 88392, avoid excessive trace length, and consider thermal vias if ambient temperatures exceed 70 °C. The SMBJ58HE3/5B is rated for TJ up to +150 °C.
SMBJ58HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.4V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 5.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ58HE3/5B FAQ
1.How can I place an order for SMBJ58HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ58HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ58HE3/5B reliable?
The price and inventory of SMBJ58HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ58HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ58HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ58HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ58HE3/5B?
SMBJ58HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ58HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ58HE3/5B?
For technical support, including SMBJ58HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ58HE3/5B requirements.
6.How does Aetrix verify that SMBJ58HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ58HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ58HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ58HE3/5B?
All SMBJ58HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ58HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ58HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ58HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ58HE3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
