Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ60AHE3_A/I

Part No.:
SMBJ60AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ60AHE3_A/I.pdf
Description:
TVS DIODE 60VWM 96.8VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,719

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ60AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features 60 V stand-off voltage (VWM), 66.7–73.7 V breakdown voltage (VBR) at 1 mA, 96.8 V maximum clamping voltage (VC) at 6.2 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive ECUs, industrial PLC I/O modules, and telecom power supplies.

For engineers reviewing the SMBJ60AHE3_A/I datasheet, SMBJ60AHE3_A/I pinout, SMBJ60AHE3_A/I application, or SMBJ60AHE3_A/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and real-world clamping behavior under surge conditions - critical for ESD and lightning-induced transient design validation.

Technical Context

This TVS diode operates as a unidirectional avalanche clamp, leveraging glass-passivated silicon junction technology to achieve sub-nanosecond response time and low incremental surge resistance. Its 600 W peak pulse power rating is defined per 10/1000 µs waveform with 0.01 % duty cycle, and it maintains stable clamping performance across –55 °C to +150 °C operating junction temperature.

The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), exhibits 1.0 µA max reverse leakage at VWM, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Polarity is marked by cathode band; terminals are matte tin-plated and solderable per J-STD-002 and JESD 22-B102.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 60 V - maximum continuous reverse operating voltage before clamping initiates; defines safe DC rail protection threshold.
VBR (min/max) 66.7 V / 73.7 V at IT = 1 mA - guaranteed avalanche onset range; ensures predictable turn-on during transients.
VC @ IPPM 96.8 V at 6.2 A - maximum clamped voltage seen by protected circuit during 10/1000 µs surge; determines downstream voltage stress.
PPPM 600 W - peak transient energy absorption capability under standardized 10/1000 µs waveform; validates surge immunity level.
TJ max. +150 °C - maximum junction temperature; supports operation in under-hood automotive and high-ambient industrial environments.
RθJA 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB thermal layout requirements.
AEC-Q101 Qualified - certified for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with molded UL 94 V-0 compound; cathode indicated by band on body.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / transient return path Connected to ground or low-impedance return in unidirectional configuration; completes clamping loop during overvoltage events.
Cathode Protected line connection / clamping node Connected to the line being protected (e.g., 60 V supply rail); avalanche conduction occurs from cathode to anode when V > VBR.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables single-device protection against IEC 61000-4-5 Level 3 (1 kV/2 Ω) surges on 60 V systems without derating.
AEC-Q101 qualified (HE3 suffix) Validates suitability for automotive powertrain and body electronics where long-term reliability under thermal cycling and vibration is mandatory.
Low clamping ratio (VC/VBR ≈ 1.39) Minimizes voltage overshoot during clamping - critical for safeguarding 65 V-rated MOSFETs and gate drivers in 48 V architectures.
MSL Level 1, 260 °C peak reflow Supports standard lead-free SMT assembly without moisture sensitivity concerns or pre-bake requirements.
Glass-passivated junction Ensures stable VBR and low leakage (<1 µA) over lifetime, even under humidity and bias stress in industrial control environments.

Applications

Automotive Body Control Module (BCM) Industrial 48 V DC Power Rail

Use Scenario: Protecting LIN bus transceivers and microcontroller I/O pins from load-dump and jump-start induced transients in vehicle door modules.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between LIN line and ground, clamping spikes within 1 ns to limit voltage to <100 V.

Use Value: Prevents latch-up and permanent damage to 5 V tolerant transceivers during 12 V system surges up to ±100 V, validated per ISO 7637-2 Pulse 5a.

Use Scenario: Safeguarding buck converter output stage and downstream 60 V-rated GaN FETs in factory automation power supplies.

IC Role / Device Role / Timing Role: Parallel-connected TVS on 48 V output rail, absorbing inductive kickback from solenoid drivers and motor controllers.

Use Value: Limits rail voltage to ≤96.8 V during 6.2 A transients, preserving 65 V VDS(max) margin for GaN switches and avoiding overvoltage shutdown.

Telecom Remote Radio Unit (RRU) Power Input Medical Infusion Pump Motor Driver

Use Scenario: Shielding 60 V DC input of outdoor 5G RRUs from lightning-induced surges on PoE-like distribution lines.

IC Role / Device Role / Timing Role: First-line transient suppressor before DC-DC converter input, rated for repeated 600 W pulses per IEC 61000-4-5.

Use Value: Withstands ≥1000 surges at 80 % of rated PPPM, enabling field-deployed reliability without maintenance in exposed infrastructure.

Use Scenario: Protecting H-bridge gate drivers and current sense amplifiers from back-EMF spikes during stepper motor commutation.

IC Role / Device Role / Timing Role: Localized TVS on motor supply rail adjacent to driver IC, clamping transients before they couple into analog sensing paths.

Use Value: Maintains <1 µA leakage at 60 V, preventing offset drift in precision current measurement while delivering sub-ns response to 100 V spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ60AHM3_A/I Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. No functional difference; selected where halogen-free material compliance is mandated (e.g., EU medical or aerospace programs). Direct drop-in replacement if halogen-free bill-of-materials is required; same footprint, thermal, and clamping behavior.
SMCJ60AHE3_A/I Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; 1500 W PPPM rating and lower RθJA (50 °C/W). Used where higher surge endurance (>1500 W) or improved thermal dissipation is needed - e.g., main DC input vs. local rail protection. Select when system-level surge test levels exceed IEC 61000-4-5 Level 4; requires PCB layout change due to larger 7.11 mm × 6.22 mm footprint.

Compared with SMBJ60AHE3_A/I, SMBJ60AHM3_A/I offers identical protection performance with halogen-free construction, while SMCJ60AHE3_A/I provides 2.5× higher pulse power handling at the cost of increased board area and different thermal management - guiding selection based on compliance mandates and surge severity tier.

Availability

SMBJ60AHE3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial 48 V power systems, telecom remote radio units, and medical motor control applications requiring stable component supply with AEC-Q101 assurance and traceable sourcing.

Supply support for SMBJ60AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series is engineered for high-energy transient suppression in space-constrained, high-reliability environments - targeting automotive, industrial, and telecom systems where consistent clamping and AEC-Q101 validation are mandatory.

FAQ

What is the clamping voltage of SMBJ60AHE3_A/I at its rated peak pulse current?

The SMBJ60AHE3_A/I has a maximum clamping voltage (VC) of 96.8 V at its rated peak pulse current (IPPM) of 6.2 A, measured using the standardized 10/1000 µs waveform. This value defines the highest voltage the protected circuit will experience during a full-rated surge event, and it is confirmed in the Vishay datasheet Document Number 88392, page 2. The SMBJ60AHE3_A/I maintains this clamping performance across its full operating temperature range.

Is SMBJ60AHE3_A/I qualified for automotive applications?

Yes, SMBJ60AHE3_A/I is AEC-Q101 qualified, as indicated by the "HE3" suffix in its part number. This certification covers stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD, validating its use in automotive body electronics, infotainment power rails, and ADAS sensor interfaces. The qualification is documented in Vishay's official datasheet and supported by Vishay's automotive product line documentation.

What is the standoff voltage and breakdown voltage range for SMBJ60AHE3_A/I?

The SMBJ60AHE3_A/I has a reverse standoff voltage (VWM) of 60 V and a breakdown voltage (VBR) range of 66.7 V to 73.7 V at 1 mA test current. These values ensure reliable blocking of normal 60 V system operation while guaranteeing avalanche conduction begins no later than 73.7 V - a critical margin for protecting 65 V-rated components. All values are specified in the Electrical Characteristics table of the Vishay SMBJ5.0A–SMBJ188A datasheet.

Does SMBJ60AHE3_A/I have a bidirectional version?

No, SMBJ60AHE3_A/I is a unidirectional TVS diode, as confirmed by its "A" suffix and cathode-band marking. For bidirectional operation at the same voltage rating, the equivalent part is SMBJ60CAHE3_A/I (with "CA" suffix), which provides symmetrical clamping in both polarities and is used in AC-coupled or floating signal line protection. The unidirectional nature of SMBJ60AHE3_A/I makes it optimal for DC rail protection where polarity is fixed.

What package type and mounting specifications apply to SMBJ60AHE3_A/I?

SMBJ60AHE3_A/I uses the SMB (DO-214AA) surface-mount package, measuring 4.57 mm × 3.94 mm × 2.20 mm with a 2.16 mm lead pitch. It is designed for automated placement and reflow soldering at up to 260 °C peak (MSL Level 1). The device requires 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for rated power dissipation, as specified in the Vishay thermal derating curves and mechanical drawings.

SMBJ60AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
60V
Voltage - Breakdown (Min):
66.7V
Voltage - Clamping (Max) @ Ipp:
96.8V
Current - Peak Pulse (10/1000µs):
6.2A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ60AHE3_A/I FAQ

1.How can I place an order for SMBJ60AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ60AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ60AHE3_A/I reliable?

The price and inventory of SMBJ60AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ60AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SMBJ60AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ60AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ60AHE3_A/I?

SMBJ60AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ60AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ60AHE3_A/I?

For technical support, including SMBJ60AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ60AHE3_A/I requirements.

6.How does Aetrix verify that SMBJ60AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SMBJ60AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ60AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SMBJ60AHE3_A/I?

All SMBJ60AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ60AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ60AHE3_A/I part is unused and in its original packaging.

Return procedure for SMBJ60AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ60AHE3_A/I Tags

  • SMBJ60AHE3_A/I
  • SMBJ60AHE3_A/I PDF
  • SMBJ60AHE3_A/I Datasheet
  • SMBJ60AHE3_A/I Specifications
  • SMBJ60AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ60AHE3_A/I
  • Buy SMBJ60AHE3_A/I
  • SMBJ60AHE3_A/I Price
  • SMBJ60AHE3_A/I Distributor
  • SMBJ60AHE3_A/I Supplier
  • SMBJ60AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER