Vishay General Semiconductor - Diodes Division SMBJ60AHE3_B/H
- Part No.:
- SMBJ60AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ60AHE3_B/H.pdf
- Description:
- 600W,60V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:8,204
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ60AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 60 V standoff voltage (VWM), 66.7–73.7 V breakdown range (VBR at 1 mA), 96.8 V maximum clamping voltage (VC) at 6.2 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supply rails and industrial sensor interfaces.
For engineers reviewing the SMBJ60AHE3_B/H datasheet, SMBJ60AHE3_B/H pinout, SMBJ60AHE3_B/H application, or SMBJ60AHE3_B/H equivalent, key selection criteria include its AEC-Q101 qualification, unidirectional polarity with cathode band marking, low thermal resistance (RθJL = 20 °C/W), and compliance with UL 497B for telecom and automotive protection systems.
Technical Context
This TVS diode operates as a voltage-clamping device that enters avalanche conduction when reverse voltage exceeds its VBR threshold, limiting transient energy to protect downstream ICs and MOSFETs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
Designed for unidirectional operation only, SMBJ60AHE3_B/H exhibits 1.0 µA max reverse leakage at 60 V, 0.105 %/°C temperature coefficient of VBR, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak - enabling robust automated SMT assembly in high-reliability automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 60 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin. |
| VBR (Breakdown Voltage) | 66.7–73.7 V at 1 mA - Confirmed avalanche onset range; ensures predictable turn-on during transients. |
| VC (Clamping Voltage) | 96.8 V at 6.2 A (10/1000 µs) - Peak voltage seen by protected circuit during worst-case surge; determines system overvoltage margin. |
| PPPM (Peak Pulse Power) | 600 W - Energy-handling capability for standardized 10/1000 µs surge; supports IEC 61000-4-5 Level 4 immunity. |
| IPPM (Peak Pulse Current) | 6.2 A - Maximum non-repetitive surge current it can shunt without failure; sets minimum series impedance requirements. |
| TJmax | 150 °C - Maximum junction temperature; enables operation in under-hood automotive environments. |
| Package | SMB (DO-214AA) - Industry-standard 2-pin surface-mount outline with 5.0 mm × 3.9 mm footprint and 2.2 mm height; compatible with standard pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, UL 94 V-0 rated compound, cathode indicated by band marking on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or low-impedance return plane; completes clamping loop during transient events. |
| Cathode | Reverse-biased terminal / Clamping node | Connected to protected line (e.g., 12 V rail); avalanche conduction initiates here when VWM exceeded. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - required for powertrain and body control modules. |
| 600 W peak pulse power (10/1000 µs) | Supports EN 61000-4-5 4 kV/2 Ω combination wave testing without derating in typical PCB layouts. |
| Glass-passivated junction | Ensures stable VBR tolerance and low leakage (<1 µA) across temperature and lifetime - critical for low-power sensor nodes. |
| MSL Level 1 (260 °C peak) | Enables single-pass lead-free reflow without moisture sensitivity concerns - eliminates bake requirements in production. |
| Low RθJL = 20 °C/W | Facilitates efficient heat transfer to PCB copper pads, sustaining repetitive surge duty cycles in compact designs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: 12 V battery-supplied ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional clamping device placed between input fuse and DC-DC converter input. Use Value: Limits transient voltage to ≤96.8 V, preventing damage to 36 V-rated input stages while maintaining >60 V nominal operation. |
Use Scenario: 4–20 mA current-loop sensors in factory automation subject to field wiring ESD and inductive kickback. IC Role / Device Role / Timing Role: Reverse-polarity and surge protector on analog front-end inputs. Use Value: Clamps 8 kV contact ESD (IEC 61000-4-2) within <1 ns, preserving signal integrity and avoiding ADC saturation. |
| Telecom Line Card Surge Suppression | Consumer Power Adapter Input Protection |
|
Use Scenario: AC-DC adapter secondary-side outputs feeding PoE-powered devices vulnerable to induced surges. IC Role / Device Role / Timing Role: Secondary-side TVS on +5 V or +12 V output rail before connector interface. Use Value: Absorbs 600 W surge energy without degradation, meeting UL 497B Class B requirements for telecom safety. |
Use Scenario: USB-C PD adapters with wide-input-range controllers subjected to mains transients and hot-plug events. IC Role / Device Role / Timing Role: Primary-side clamping element across bulk capacitor terminals. Use Value: Provides fail-safe overvoltage shutdown margin with 60 V VWM aligned to 65 V OVP thresholds in modern controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ60A-E3/52 | Commercial-grade (non-AEC-Q101), same electrical specs and SMB package. | Lacks automotive qualification; suitable for consumer/industrial use where AEC-Q101 not mandated. | Select SMBJ60AHE3_B/H when automotive qualification, traceable lot control, and extended temperature validation are required. |
| SMCJ60AHE3_A/H | Same AEC-Q101 rating but in larger SMC (DO-214AB) package with 1500 W PPPM. | Higher power handling requires larger PCB area; used where higher surge immunity (e.g., ISO 16750-2) is needed. | Choose SMBJ60AHE3_B/H for space-constrained designs needing 600 W rating and AEC-Q101 compliance in minimal footprint. |
Compared with SMBJ60A-E3/52, SMBJ60AHE3_B/H adds AEC-Q101 qualification and enhanced process controls for automotive use; compared with SMCJ60AHE3_A/H, it trades 2.5× lower surge power for 40 % smaller board area and identical qualification level.
Availability
SMBJ60AHE3_B/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom infrastructure requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for SMBJ60AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.
The SMBJ series is engineered for high-speed transient suppression in harsh environments - targeting automotive power distribution, industrial I/O protection, and telecom interface hardening with standardized surge resilience.
FAQ
What is the clamping voltage of SMBJ60AHE3_B/H at its rated peak pulse current?
The SMBJ60AHE3_B/H has a maximum clamping voltage (VC) of 96.8 V at 6.2 A peak pulse current with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuits during surge events. The SMBJ60AHE3_B/H maintains this clamping performance across its qualified temperature range and after multiple surge cycles when mounted per recommended pad layout.
Is SMBJ60AHE3_B/H suitable for bidirectional transient protection?
No, SMBJ60AHE3_B/H is a unidirectional TVS diode, intended for DC-biased lines where polarity is fixed - such as automotive 12 V rails or regulated power outputs. For bidirectional protection (e.g., AC lines or data buses), Vishay offers the SMBJ60CA variant. The SMBJ60AHE3_B/H cathode band marking confirms its unidirectional orientation, and reverse connection would result in forward conduction rather than clamping.
Does SMBJ60AHE3_B/H meet automotive qualification standards?
Yes, SMBJ60AHE3_B/H is AEC-Q101 qualified, verified per the full stress test suite including HTGB, HTRB, TCT, and surge endurance. Its HE3 suffix explicitly denotes AEC-Q101 compliance, RoHS conformity, and automotive-grade material content. This makes SMBJ60AHE3_B/H appropriate for use in engine control units, ADAS modules, and body electronics where automotive reliability is mandatory.
What is the thermal resistance from junction to lead (RθJL) for SMBJ60AHE3_B/H?
The SMBJ60AHE3_B/H has a typical junction-to-lead thermal resistance (RθJL) of 20 °C/W, measured under standard mounting conditions. This low value enables effective heat dissipation into PCB copper pads during repetitive surge events. When designing layouts, using ≥5.0 mm × 5.0 mm copper pads per terminal - as specified in the Vishay datasheet - ensures SMBJ60AHE3_B/H remains within its 150 °C maximum junction temperature limit.
How does the VBR tolerance of SMBJ60AHE3_B/H affect circuit design margin?
SMBJ60AHE3_B/H specifies a breakdown voltage (VBR) range of 66.7 V to 73.7 V at 1 mA test current, representing ±5 % tolerance around the nominal 70.2 V midpoint. Designers must ensure the protected circuit's absolute maximum voltage rating exceeds 73.7 V to avoid unintended clamping during normal operation. This tolerance directly impacts the margin between VWM (60 V) and VBR, and informs selection of upstream overvoltage protection thresholds.
SMBJ60AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 60V
- Voltage - Breakdown (Min):
- 66.7V
- Voltage - Clamping (Max) @ Ipp:
- 96.8V
- Current - Peak Pulse (10/1000µs):
- 6.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ60AHE3_B/H FAQ
1.How can I place an order for SMBJ60AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ60AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ60AHE3_B/H reliable?
The price and inventory of SMBJ60AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ60AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ60AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ60AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ60AHE3_B/H?
SMBJ60AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ60AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ60AHE3_B/H?
For technical support, including SMBJ60AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ60AHE3_B/H requirements.
6.How does Aetrix verify that SMBJ60AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ60AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ60AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ60AHE3_B/H?
All SMBJ60AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ60AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ60AHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ60AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ60AHE3_B/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

